XPT IGBT Module MIXA450PF1200TSF. Phase leg + free wheeling Diodes + NTC MIXA450PF1200TSF. Part number
|
|
- Margery Adams
- 5 years ago
- Views:
Transcription
1 XPT IGBT Module CS 2x 12 I C C(sa) Phase leg + free wheeling Diodes + NTC Par number Backside: isolaed /11 Feaures / dvanages: pplicaions: Package: SimBus F High level of inegraion - only one power semiconducor module required for he whole drive Rugged XPT design (Xreme ligh Punch Through) resuls in: - shor circui raed for µsec. - very low gae charge - low MI - square 3x Ic Thin wafer echnology combined wih he XPT design resuls in a compeiive low C(sa) Temperaure sense included SONIC diode - fas and sof reverse recovery - low operaing forward volage C moor drives Pumps, Fans ir-condiioning sysem Inverer and power supplies UPS Isolaion olage: 3~ Indusry sandard ouline RoHS complian Soldering pins for PCB mouning Heigh: 17 mm Base plae: Copper inernally DCB isolaed dvanced power cycling Daa according o IC 747and per semiconducor unless oherwise specified 2122a
2 IGBT Symbol CS GS GM 25 8 collecor curren Condiions T C 25 C T 8 C Raings min. yp. max. 12 P o oal power dissipaion T C 25 C 2 W C(sa) collecor emier sauraion volage 4; G 15 T J 25 C G(h) gae emier hreshold volage 18m; G C T J 25 C S collecor emier leakage curren C CS; G T J 25 C 1 m T 125 C m I GS RBSO Definiion collecor emier volage max. DC gae volage max. ransien gae emier volage gae emier leakage curren ±2 G T 25 C J QG(on) oal gae charge C ; G 15 ; 4 14 nc r f d(on) d(off) on off M SCSO SC urn-on delay ime 85 ns curren rise ime 8 ns inducive load urn-off delay ime 3 ns C ; 4 curren fall ime 3 ns G ±15 ; 1. Ω urn-on energy per pulse 22 mj urn-off energy per pulse 8 mj reverse bias safe operaing area G ±15 ; 1. Ω 9 Cmax 12 shor circui safe operaing area shor circui duraion Cmax 12 9 ; ±15 C G C T 125 C I SC shor circui curren 1. Ω; non-repeiive 19 R hjc hermal resisance juncion o case. K/W R hch hermal resisance case o heasink.3 K/W J J ±2 ± Uni µ µs Diode RRM I F25 max. repeiive reverse volage T 25 C J forward curren T 25 C I F 8 T C 8 C F forward volage I 4 T 25 C F C J T 125 C J I R reverse curren R RRM T J 25 C * m * no applicable, see Ices value above * m Qrr reverse recovery charge 2 µc R IRM max. reverse recovery curren 425 -di F /d 54 /µs rr reverse recovery ime 3 ns I F 4; G rec reverse recovery energy 2 mj R hjc hermal resisance juncion o case.95 K/W R hch hermal resisance case o heasink.4 K/W Daa according o IC 747and per semiconducor unless oherwise specified 2122a
3 Package SimBus F Raings Symbol Definiion Condiions min. yp. max. Uni I RMS RMS curren per erminal T sg sorage emperaure C T J virual juncion emperaure -4 1 C Weigh M D M T d Spp/pp d Spb/pb ISOL mouning orque 3 erminal orque 3 creepage disance on surface sriking disance hrough air isolaion volage 1 second 1 minue erminal o erminal erminal o backside / Hz, RMS; I ISOL 1 m R pin-chip resisance pin o chip Csa + 2 R resp. F + 2 R I F.5 mω g Nm Nm mm mm XXX XX-XXXXX YYWWx 2D Daa Marix Logo UL Par number Dae Code Locaion Par number M I X 4 PF 12 T SF Module IGBT XPT IGBT Gen 1 / sd Curren Raing [] Phase leg + free wheeling Diodes Reverse olage [] Thermisor \ Temperaure sensor SimBus F Ordering Sandard Par Number Marking on Produc Delivery Mode Quaniy Code No. Box Temperaure Sensor NTC Symbol Definiion Condiions min. yp. max. R 25 resisance T J B 25/ emperaure coefficien 3375 quivalen Circuis for Simulaion * on die level T J 1 C I R IGBT Diode max hreshold volage R max slope resisance * Uni kω K mω R [ ] T C [ C] Typ. NTC resisance vs. emperaure Daa according o IC 747and per semiconducor unless oherwise specified 2122a
4 2 57,5 22,8 87,2,59 4,4 33,92 37,73 7,25 11, 7,75 2,5 17 Oulines SimBus F 1, ,4 3,75 R2, , , /11 Daa according o IC 747and per semiconducor unless oherwise specified 2122a
5 IGBT 8 G 15 8 G [] 2 T J 25 C T J 125 C 4 [] 2 T J 125 C 9 4 [] 2 T J 125 C T J 25 C C [] Fig. 1 Typ. oupu characerisics C [] Fig. 2 Typ. oupu characerisics G [] Fig. 3 Typ. ransfer characerisics C 7 1. C G ±15 T J 125 C r d(on) C G ±15 T J 125 C 8 G [] on d(off) 2 f Q G [nc] Fig. 4 Typ. urn-on gae charge rec (off) [] Fig. 5 Typ. urn-on energy & swiching imes vs. collecor curren, inducive swiching off [] Fig. Typ. swiching energy versus gae resisance. Z hjc.4 [K/W] single pulse.2 R i i [s] Fig. 7 Typ. rans. herm. impedance C G ±15 T J 125 C rec(on) on d(on) [ ] Fig. 8 Typ. urn-on energy, swiching imes vs. gae resisor, inducive swiching r 8 off 4 2 off 4 C G ±15 T J 125 C d(of) [ ] Fig.9 Typ. urn-off energy, swiching imes vs. gae resisor, inducive swiching f Daa according o IC 747and per semiconducor unless oherwise specified 2122a
6 Diode 8 4 I f R 4 T J 125 C 1. 5 I f R 4 T J 125 C I F 4 [] 2 T J 125 C T J 25 C I rr [] rr F [] Fig. 1 Typ. Forward curren versus F di F /d [/μs] Fig. 2 Typ. reverse recovery characerisics di F /d [/μs] Fig. 3 Typ. reverse recovery characerisics 8 R g 1. R T J 125 C R g 1. R T J 125 C 28 2 I f R 4 T J 125 C Q rr [μc] 4 4 I rr [] 3 24 rec I F [] Fig. 4 Typ. reverse recovery characerisics I F [] Fig. 5 Typ. reverse recovery characerisics di F /d [/μs] Fig. Typ. recovery energy rec versus -di/d..8 Z hjc. [K/W].4 single pulse R i i [s] Fig. 7 Typ. ransien hermal impedance juncion o case Daa according o IC 747and per semiconducor unless oherwise specified 2122a
Features / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = x 1 I C = 9 =. CE(sa) Phase leg Par number MII7-13 1 Backside: isolaed 7 3 Feaures / dvanages: pplicaions: Package: Y NPT IGBT echnology low sauraion volage low swiching losses
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C25 = 16 = 2.2 CE(sa) Buck Chopper + free wheeling Diode Par number MDI145-123 Backside: isolaed 1 7 6 3 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C2 = 16 = 2.2 CE(sa) Boos Chopper + free wheeling Diode Par number MID14-123 Backside: isolaed 1 3 4 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low sauraion
More informationFeatures / Advantages: Applications: Package: SMPD
X0PLB XP GB x CES C CE(sa). SOPLUS Surface Moun Power Device Phase leg SCR / GB Par number X0PLB Backside: isolaed E664 6 4 Feaures / dvanages: pplicaions: Package: SMPD XP GB - low sauraion volage - posiive
More informationConverter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D1 1 2 3 7 D7 16 1 T1 D1 T3 D3 T D 18 2 6 17 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 1 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
More informationConverter - Brake - Inverter Module (CBI2)
MUBW 5-6 7 Converer - Brake - Inverer Module (CBI2) 2 22 D D3 D5 2 3 7 D7 6 5 T D T3 D3 T5 D5 8 2 6 7 5 9 4 D2 D4 D6 T7 T2 D2 T4 D4 T6 D6 23 4 24 2 3 NTC 8 9 Three Phase Brake Chopper Three Phase Recifier
More informationConverter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D15 1 2 3 7 D7 16 15 T1 D1 T3 D3 T5 D5 18 6 17 5 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
More informationStandard Rectifier Module
UB2-6NOX Sandard ecifier Module M = 6 I = 8 D 3~ ecifier I SM = Brake hopper ES = 2 I = 8 25 E(sa) =.7 3~ ecifier Bridge + Brake Uni Par number UB2-6NOX M/O S Backside: isolaed ~6 ~E6 ~K6 U/ W M/O W U
More informationConverter - Brake - Inverter Module (CBI3)
MUBW 35-12 8 Converer - Brake - Inverer Module (CBI3) 21 22 D11 D13 D15 1 2 3 7 D7 1 15 T1 D1 T3 D3 T5 D5 18 2 17 5 19 4 D12 D14 D1 23 14 24 T7 11 1 T2 D2 T4 D4 T D 12 13 See ouline drawing for pin arrangemen
More informationp h a s e - o u t Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VVZB 135 = 1600 V = 135 A Recommended replacement:
VVZB 5 Three Phase Recifier Bridge wih IGBT and Fas Recovery Diode for Braking Sysem V RRM I dvm = 6 V = 5 V RRM Type + 6 5 4 NTC 9 + V 6 VVZB 5-6 NO 6+7 4+5 + Symbol Condiions Maximum Raings V RRM 6 V
More information3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack
ZB3-6ioX hyrisor Module M = 6 I = D FSM = 7 I 3~ ecifier Brake hopper ES = 2 I = 2 2 E(sa) =,8 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni + N Par number ZB3-6ioX Backside: isolaed / 3 2
More information6/7 1/2 4/5. Features / Advantages: Applications: Package: V1-A-Pack
MIX15R1 XPT Module 1 ES I E(sa) 1.7 Boos hopper Par number MIX15R1 Backside: isolaed /7 1/ 1 /5 Feaures / dvanages: pplicaions: Package: 1--Pack Easy paralleling due o he posiive emperaure coefficien of
More informationHigh Voltage Standard Rectifier Module
UB35-22NO High olage Sandard ecifier Module M = 22 I = 5 D 3~ ecifier I SM = Brake hopper ES = 7 I = 3 25 E(sa) =.9 3~ ecifier Bridge + Brake Uni + NT Par number UB35-22NO Backside: isolaed 24+25 29 3
More informationStandard Rectifier Module
UB7-NOXT Sandard ecifier Module 3~ ecifier Bridge + Brake Uni + NT M = I = 7 D SM = I 3~ ecifier Brake hopper ES = I = 8 E(sa) =.8 Par number UB7-NOXT Backside: isolaed NT ~ 7~ 9~ eaures / dvanages: pplicaions:
More informationCoolMOS 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode
IXKF 4N6SCD1 CoolMOS 1) Power MOSFET wih Series Schoky Diode and Ulra Fas niparallel Diode in High olage ISOPLUS i4-pc S = 6 2 = 41 yp. = 6 mω rr = 7 ISOPLUS i4-pc Preliminary daa 1 D S T D F 1 2 E72873
More informationO10 W10. Features / Advantages: Applications: Package: V2-Pack. 3~ Rectifier with brake unit for drive inverters
ZB-ioX hyrisor Module M = = 8 D SM = 7 3~ ecifier Brake hopper ES = = 8 5 E(sa) =.7 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni Par number ZB-ioX Backside: isolaed O S E M L7 G7 7 O eaures
More informationFeatures / Advantages: Applications: Package: SOT-227B (minibloc)
IX7R1N XPT CS 1 I C5 1 1.8 C(sat) Boost Chopper Part number IX7R1N Backside: isolated 3 1 Features / dvantages: pplications: Package: SOT-7B (minibloc) asy paralleling due to the positive temperature coefficient
More informationp h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2
GWM 18-4X2 Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 4 V 25 = 18 R DSon yp. = 1.9 mw Preliminary daa G1 G3 G5 L+ S1 G2 S3 G4 S5 G6 L1 L2 L3 Sraigh leads Surface
More informationPower MOSFET Stage for Boost Converters
UM 33-5N Power MOSFET Sage for Boos Converers Module for Power Facor Correcion 5 = 7 DSS = 5 R DS(on) =. Ω RRM (Diode) DSS Type 5 3 7 3 5 UM 33-5N 5 7 Symbol Condiions Maximum Raings DSS T J = 5 C o 5
More informationp h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration
MM 5-75X Dual Power MOSFET Module S = 75 5 = 5 =. mω Phaseleg Configuraion Gae Conrol Pi 9 Power Screw Terminals 9 MOSFET T + T Symbol Condiio Maximum Raings S = 5 C o 5 C 75 ± 5 T C = 5 C j 5 T C = C
More informationIXRH 40N120. IGBT with Reverse Blocking capability V CES I C25. = ±1200 V = 55 A V CE(sat) = 2.3 V typ IXYS All rights reserved TO-247 AD
IXRH N wih Reverse Blocking capabiliy S 5 = ± V = 55 (sa) =. V yp. TO-7 D E (TB) E = ae, = ollecor, E = Emier, TB = ollecor Symbol ondiio Maximum Raings S T VJ = 5 o 5 ± V S ± V 5 T = 5 55 9 T = 9 5 M
More informationIXGH48N60C3D1. GenX3 TM 600V IGBT with Diode V CES = 600V I C110. = 48A V CE(sat) 2.5V t fi(typ) = 38ns. High speed PT IGBT for kHz Switching
GenX3 TM 6V IGBT wih Diode High speed PT IGBT for 4-1kHz Swiching IXGH48N6C3D1 V CES = 6V 11 = 48A V CE(sa) 2.V fi(yp) = 38ns TO-247 Symbol Tes Condiions Maximum Raings V CES = C o C 6 V V CGR = C o C,
More informationtentative X2PT IGBT Module 6-Pack + NTC MIXG120W1200TEH V CES = 1200 V I C25 = 186 A V CE(sat) = 1.7 V tentative Part number MIXG120W1200TEH
X2PT IGBT Module CES = 1200 I C2 = 18 CE(sat) = 1.7 -Pack + NTC Part number MIXG120W1200TEH 31 32 4,, NTC 1 2 9, 0, 1 Features / dvantages: X2PT - 2nd generation Xtreme light Punch Through Tvjm = 17 Easy
More information5STF 11F3010 Old part no. TR Fast Thyristor
5STF 11F31 5STF 11F31 Old par no. TR 918-111-3 Fas Thyrisor Properies Key Parameers Amplifying gae V DRM, V RRM = 3 V High operaional capabiliy I TAV = 1 11 A Opimized urn-off parameers I TSM = 1. ka V
More informationSix-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH
MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines.
More information5STF 07T1414 Old part no. TR 907FC
5STF 7T1414 Medium Frequency Thyrisor Properies 5STF 7T1414 Old par no. TR 97FC-74-14 Key Parameers Amplifying gae V DRM, V RRM = 1 4 V High operaional capabiliy I TAV = 736 A Opimized urn-on and urn-off
More informationSix-Pack XPT IGBT MIXA30W1200TML. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TML
MIX3WTML Six-Pack XPT IGBT S = = 3 (sat) =.8 Part name (Marking on product) MIX3WTML, 3 8 8 NTC 3 7,, 9, E7873 7 Pin configuration see outlines. 3 9, Features: High level of integration Rugged XPT design
More information5STF 28H2060. Fast Thyristor. VDRM, VRRM = V High operational capability. ITAV = A Optimized turn-off parameters
5STF 28H26 5STF 28H26 Fas Thyrisor Properies Key Parameers Amplifying gae VDRM, VRRM = 2 V High operaional capabiliy ITAV = 2 667 A Opimized urn-off parameers ITSM = 46.5 ka VTO = 1.198 V Applicaions rt
More informationConverter - Brake - Inverter Module XPT IGBT
MIX3WBTED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = Three Phase Inverter CES = I DM = 5 5 = 7 5 = 43 I FSM = 3 CE(sat) =. CE(sat) =. Part name (Marking
More informationD1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7
MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the
More informationIGBT Module H Bridge MIXA81H1200EH. = 1200 V = 120 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIXA81H1200EH.
MIX1H1EH IGBT Module H Bridge CES 5 = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIX1H1EH 13, 1 1 9 1 19 15 E773 3 11 1 1, Features: pplication: Package: Easy paralleling due to the positive temperature
More informationT1 T3 T5 D1 D3 D5 G1 G3 G5 U V W G2 G4 G6 EU EV EW
MIXW1TMH Six-Pack XPT IGBT S = 1 2 = 28 (sat) = 1.8 Part name (Marking on product) MIXW1TMH P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 E 72873 Pin configuration see outlines. EU
More informationSix-Pack XPT IGBT MIXA20W1200MC. V CES = 1200 V I C25 = 28 A V CE(sat) = 2.1 V. Part name (Marking on product) MIXA20W1200MC
MIXWMC Six-Pack XPT IGBT S = = 8 (sat) =. Part name (Marking on product) MIXWMC O9 P9 L9 S8 W8 E I4 C G4 K4 E K C G H Features: Easy paralleling due to the positive temperature coefficient of the on-state
More informationSix-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED
MIX3W2TED Six-Pack XPT IGBT CES = 2 2 = 43 CE(sat) =.8 Part name (Marking on product) MIX3W2TED 2, 2, 9 7 NTC 2 23, 24 2, 22 9, 2 E 72873 8 3 7 Pin configuration see outlines. 4 27, 28 8 2 3, 4 Features:
More informationNDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
April 996 NP45L / NB45L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level N-Channel enhancemen mode power field effec ransisors are produced using
More informationSix-Pack XPT IGBT MIXA30W1200TMH. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TMH
MIX3W12TMH Six-Pack XPT IGBT S = 12 25 = 43 (sat) = 1.8 Part name (Marking on product) MIX3W12TMH E 72873 Pin configuration see outlines. Features: High level of integration - only one power semiconductor
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWB2TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = 2 Three Phase Inverter CES = 2 I DM = 25 25 = 25 = 2 I FSM = CE(sat) =. CE(sat) =. Part name (Marking
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWBTML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 1 2 = 17 2 = 28 I FSM = 3 CE(sat) = 1.8 CE(sat) = 1.8 Part name
More informationITF48IF1200HR. Trench IGBT. V CES = 1200 V I C25 = 72 A V CE(sat) = 2.05 V. Copack. Part number ITF48IF1200HR 2 (C) (G) 1 3 (E)
ITF8IFHR Trench Copack S = 5 = 7 (sat) =.5 Part number ITF8IFHR (C) Backside: isolated 787 (G) () Features / dvantages: asy paralleling due to the positive temperature coefficient of the on-state voltage
More informationIXTA96P085T IXTP96P085T IXTH96P085T
TrenchP TM Power MOSFETs P-Channel Enhancemen Mode Avalanche Raed IXTA96P85T IXTP96P85T V DSS = - 85V I D25 = - 96A R DS(on) 13mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Tes Condiions Maximum Raings V DSS
More informationV DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2
3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationTop View. Top View S2 G2 S1 G1
AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low
More informationTop View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.
V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion
More informationTrenchMV TM Power MOSFET
Preliminary Technical Informaion TrenchMV TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed V DSS = V I D25 = A R DS(on) 7. mω TO-263 (IXTA) Symbol Tes Condiions Maximum Raings V DSS = 25 C o 175
More informationAO V Complementary Enhancement Mode Field Effect Transistor
AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used
More informationNDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 996 NS356P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWBTMH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 2 = 28 2 = 28 I FSM = 27 CE(sat) = 1.8 CE(sat) = 1.8 Part name
More informationNDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's
More informationS G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA
ON473 2V PChannel MOSFET wih Schoky Diode General Descripion The ON473 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. Schoky diode is provided o faciliae he implemenaion
More informationSilicon Diffused Power Transistor
Philips Semiconducors Silicon Diffused Power Transisor Produc specificaion GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper
More informationIXFK120N65X2 IXFX120N65X2
X2-Class HiPerFET TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic iode Preliminary Technical Informaion IXFK2N65X2 IXFX2N65X2 V SS = 6 I 25 = 2A R S(on) 24m TO-264 (IXFK) Symbol Tes
More informationSix-Pack XPT IGBT MIXA80W1200TED V CES I C25. = 1200 V = 120 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA80W1200TED
MIXW12TED SixPack XPT IGBT CES 2 = 12 = 12 CE(sat) = 1. Part name (Marking on product) MIXW12TED 2, 2 1, 1 1 9 17 NTC 2 1 23, 24 21, 22 19, 2 E 7273 1 3 7 11 Pin configuration see outlines. 4 27, 2 12
More informationNDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor
January 997 NS3AN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 N-Channel logic level enhancemen mode power field effec ransisors are produced using
More information10 23, 24 21, 22 19, , 14
MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology
More informationNDH834P P-Channel Enhancement Mode Field Effect Transistor
May 997 NH834P P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision
More informationABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit MBL400E33D. DC IC 400 A 1ms ICp. 800 Forward Current. DC IF 400 A 1ms IFM
IGBT MODULE Spec.No.IGBT-SP-68 R4 P1/7 MBL4E33D Silicon N-channel IGBT FEATURES High hermal faigue durabiliy.(dela Tc=7,N>3,cycles) High speed, low loss IGBT module. Low noise due o buil-in free-wheeling
More informationRoHS Directive compliant Recognized under UL1557, File E APPLICATION. dual switch (Half-Bridge) OUTLINE DRAWING & INTERNAL CONNECTION
Collecor curren I C...... 2 2 A Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax... 7 C Fla base Type Copper base plae (non-plaing) Tin plaing pin erminals dual swich (Half-Bridge) RoHS
More informationMBN1200E33D. DC I C 1,200 A 1ms I Cp. 2,400 Forward Current. DC I F 1,200 A 1ms I FM. 2,400 Junction Temperature. o C -40 ~ +125
IGBT MODULE Spec.No.IGBT-SP-25 R8 P1/6 MBN12E33D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas recovery
More information< IGBT MODULES > CM600DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
Dual swich (Half-Bridge) Collecor curren I C...... 6 A Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax... 7 C Fla base Type APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply,
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high-speed swiching npn ransisors in a fully isolaed SOT99 envelope, primarily for use in horizonal deflecion circuis of colour elevision receivers. QUICK REFERENCE DATA
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5- T Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology NTC D D3 D5 7 D7 5 T T3 T5 D D3 D5 7 9 3 5 9 D D D T7 T T T D D D 3 3 Three Phase Rectifier Brake Chopper Three Phase Inverter
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873
More information<IGBT Modules> CM225DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE
dual swich (Half-Bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren IC...... 2 2 A Collecor-emier volage VCES... 2 V Maximum
More informationV DS I D (at V GS =-10V) R DS(ON) (at V GS = -4.5V) 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The combines advanced rench MOFET echnology wih a low resisance package o provide exremely low R (ON). This device is ideal for load swich and baery proecion applicaions.
More informationItem Symbol Unit MBN800E33D Collector Emitter Voltage V CES V 3,300 Gate Emitter Voltage V GES V ±20 Collector Current. DC I C 800 A 1ms I Cp
IGBT MODULE Spec.No.IGBT-SP-312 R4 P1 Silicon N-channel IGBT OUTLINE DRAWING FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas
More informationConverter - Brake - Inverter Module NPT IGBT
dvanced Technical Information MI1WDTMH Converter - Brake - Inverter Module NPT IGBT Single Phase Rectifier Three Phase Inverter RRM = 1 CES = I DM5 = 35 I C5 = 1 I FSM = 7 CE(sat) =.1 Part name (Marking
More informationCollector current I C... Collector-emitter voltage V CES V Maximum junction temperature T jmax C Flat base Type
CMTX-S sixpack (φ Inverer) Collecor curren...... A Collecor-emier volage CES... Maximum juncion emperaure T jmax... 7 C Fla base Type APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6
More informationTERMINAL SECTION A INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension Tolerance 0.5 to 3 ±0.2. C1 over 3 to 6 ±0.
CMDXL-24S Dual swich (Half-Bridge) Collecor curren I C...... 9A * Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax... 75 C Fla base Type APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high-speed swiching npn ransisor wih inegraed damper diode in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers.
More informationV DS. 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The AO4449 uses advanced rench echnology o provide excellen R(ON), and ulralow low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationItem Symbol Unit MBM1200E17D Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V ±20 Collector Current. DC I C 1,200 A 1ms I Cp
MBM1E17D Silicon N-channel IGBT 1. FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas recovery diode. High reliabiliy, high durabiliy
More informationConverter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32
More informationXPT IGBT phaseleg ISOPLUS Surface Mount Power Device
dvanced Technical Information IX PGDHGLB XPT IGBT phaseleg ISOPLUS Surface Mount Power Device = S = (sat) typ =.8 7 6 D S D S D D 9 Isolated surface to heatsink 7 8 9 6 E787 IGBTs S, S Symbol Conditio
More information<IGBT Modules> CM300DX-34SA HIGH POWER SWITCHING USE INSULATED TYPE
APPLICATION dual swich (half-bridge) AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING Collecor curren IC...... A Collecor-emier volage VCES... 1 7 V Maximum juncion emperaure T vjmax...
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high speed swiching npn ransisor in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance
More informationMBL1000E33E2-B Silicon N-channel IGBT 3300V E2 version
MBL1E33E2-B Silicon N-channel IGBT 33V E2 version Spec.No.IGBT-SP-113 R1 P1 FEATURES Sof swiching behavior & low conducion loss: Sof low-injecion punch-hrough High conduciviy IGBT. Low driving power due
More informationHV513 8-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs, POL, Hi-Z, and Short Circuit Detect
H513 8-Channel Serial o Parallel Converer wih High olage Push-Pull s, POL, Hi-Z, and Shor Circui Deec Feaures HCMOS echnology Operaing oupu volage of 250 Low power level shifing from 5 o 250 Shif regiser
More information<IGBT Modules> CM600HA-34S HIGH POWER SWITCHING USE INSULATED TYPE
single pack Collecor curren IC...... 6 0 0 A Collecor-emier volage VCES... 7 0 0 V Maximum juncion emperaure T vjmax... 7 5 C Fla base Type Copper base plae Tin plaing pin erminals RoHS Direcive complian
More information<IGBT Modules> CM450DX-24T/CM450DXP-24T HIGH POWER SWITCHING USE INSULATED TYPE
DX DXP dual swich (half-bridge) Collecor curren IC...... 4 5 0 A Collecor-emier volage VCES... 1 2 0 0 V Maximum juncion emperaure T vjmax... 1 7 5 C Fla base ype Copper base plae (Ni-plaing) RoHS Direcive
More informationType Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2
SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary
More informationSmart Highside Power Switch
Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper diode in a plasic full-pack envelope inended for use in horizonal deflecion
More informationSmart Highside Power Switch
Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion
More informationConverter - Inverter Module NPT IGBT
dvanced Technical Information MI15WDTMH Converter - Inverter Module NT IGBT Single hase Rectifier Three hase Inverter RRM = 1 CES = I DM5 = 5 I C5 = 3 I FSM = 55 CE(sat) =.1 art name (Marking on product)
More informationSilicon Diffused Power Transistor
PHE39 GENERAL DESCRIPTION The PHE39 is a silicon npn power swiching ransisor in he TO22AB envelope inended for use in high frequency elecronic lighing ballas applicaions, converers, inverers, swiching
More informationPart Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel
Small Signal Fas Swiching Diode Feaures These diodes are also available in oher case syles including he DO- case wih he ype designaion N8, he MiniMELF case wih he ype designaion LL8, and he SOT- case wih
More informationResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching
ResonanSofSwichingSeries ReverseconducingIGBTwihmonolihicbodyDiodeforsofswiching IHWN12E1 Daashee IndusrialPowerConrol IHWN12E1 ResonanSofSwichingSeries ReverseconducingIGBTwihmonolihicbodydiode Feaures:
More information1200 V 600 A IGBT Module
1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and
More informationSmart Power High-Side-Switch
Smar Power High-Side-Swich Feaures Overload proecion Produc Summary Overvolage proecion bb(az) 4 Curren limiaion Operaing volage bb(on) 5...34 Shor circui proecion On-sae resisance R ON 35 mω Thermal shudown
More information<IGBT Modules> CM600DX-34T/CM600DXP-34T HIGH POWER SWITCHING USE INSULATED TYPE
DX DXP dual swich (half-bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. Collecor curren IC...... 6 0 0 A Collecor-emier volage VCES... 1 7 0 0 V Maximum juncion emperaure T vjmax...
More information<IGBT Modules> CM300DX-34T/CM300DXP-34T HIGH POWER SWITCHING USE INSULATED TYPE
DX DXP dual swich (half-bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. Collecor curren IC...... 3 0 0 A Collecor-emier volage VCES... 1 7 0 0 V Maximum juncion emperaure T vjmax...
More informationSmart Highside Power Switch PROFET
Smar ighside Power Swich PROFET BTS 410E2 Feaures TO220AB/ Overload proecion Curren limiaion Shor circui proecion Thermal shudown 1 1 Overvolage proecion (including Sandard Sraigh leads SMD load dump)
More information<IGBT Modules> CM225DX-34T/CM225DXP-34T HIGH POWER SWITCHING USE INSULATED TYPE
DX DXP dual swich (half-bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. Collecor curren IC...... 2 2 5 A Collecor-emier volage VCES... 1 7 0 0 V Maximum juncion emperaure T vjmax...
More informationonlinecomponents.com OPTOLOGIC OPTICAL INTERRUPTER SWITCH QVE00112 PACKAGE DIMENSIONS FEATURES 6/10/04
PACKAGE DIMENSIONS.714 (18.15).123 (3.125).189 (4.82).14 (.356).327 (8.31) Ø 3.3.1 (2.54).173 (4.4) OPTICAL C L 13.78 (35) ±.275 (7).316 (8.25) GRN WHT.464 (11.8).143 (3.625).118 (3.) GRY.173 (4.4).246.276
More information<IGBT Modules> CM300DY-13T HIGH POWER SWITCHING USE INSULATED TYPE
dual swich (half-bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OPTION (Below opions are available.) PC-TIM (Phase Change Thermal Inerface Maerial) pre-apply VCEsa selecion for
More informationSmart Two Channel Highside Power Switch
Smar Two Channel ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse
More information