p h a s e - o u t Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VVZB 135 = 1600 V = 135 A Recommended replacement:

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1 VVZB 5 Three Phase Recifier Bridge wih IGBT and Fas Recovery Diode for Braking Sysem V RRM I dvm = 6 V = 5 V RRM Type NTC 9 + V 6 VVZB 5-6 NO Symbol Condiions Maximum Raings V RRM 6 V I dvm T C = 85 C; sinusoidal 5 I FSM = 45 C; = ms; V R = V 7 = 5 C; = ms; V R = V 6 I = 45 C; = ms; V R = V 45 s = 5 C; = ms; V R = V 86 s P o T C per diode 9 W Fas Recovery Diode IGBT Recifier Bridge (di/d) cr = M ; repeiive; I T = 5 /µs f = 5 Hz; P = µs V D = / V DRM ; I G =.45 ; non repeiive; I T = I d(v) / 5 /µs di G /d =.45 /µs (dv/d) cr = M ; V DR = / V DRM ; V/µs R GK = ; mehod (linear volage rise) P GM = M ; P = µs W I T = I d(v) /; P = µs 5 W P GVM.5 W S o 5 C V Coninuous ± V I C5 T C ; DC 95 I C8 T C = 8 C; DC 67 I CM p = Pulse widh limied by M P o T C 8 W V RRM V I FV T C = 8 C; recangular d =.5 7 I FRMS T C = 8 C; recangular d =.5 8 I FRM T C = 8 C; P = µs; f = 5 khz bd I FSM = 45 C; = ms P o T C W Daa according o IEC p h a s e - o u 8 7 See ouline drawing for pin arrangemen Feaures Soldering connecions for PCB mouning Convenien package ouline Thermisor Isolaion volage 5 V~ pplicaions Drive Inverers wih brake sysem E787 dvanages funcions in one package Easy o moun wih wo screws Suiable for wave soldering High emperaure and power cycling capabiliy Recommended replacemen: VVZB 5-6ioXT IXYS reserves he righ o change limis, es condiions and dimensions. 79a 7 IXYS ll righs reserved - 5

2 VVZB 5 Symbol Condiions Characerisic Values (, unless oherwise specified) min. yp. max. I R, I D V R = V RRM ;. m V R = V RRM ; = 5 C m Recifier Diodes V F, V T I F = 8 ;.4 V V T for power-loss calculaions only.85 V r T = 5 C 7. mω V GT V D = 6 V;.5 V = -4 C.6 V I GT V D = 6 V; 78 m = -4 C m IGBT Recifier Bridge V GD = M ; V D = / V DRM. V I GD = M ; V D = / V DRM 5 m I L V D = 6 V; G = µs; 45 m di G /d =.45 /µs; I G =.45 I H = M ; V D = 6 V; R GK = m gd V D = ½ V DRM ; µs di G /d =.45 /µs; I G =.45 q = M ; V R = V; 5 µs V D = / V DRM ; P = µs; dv/d = 5 V/µs; I T = ; -di/d = /µs R hjc per diode.65 K/W R hch. K/W V BR(CES) V GS = V; I C =. m V (h) I C = 8 m V I CES = V;. m =,8 S ;.5 m sa = 5 V; I C =.5 V SC (SCSO) = 5 V; = 9 V; µs RBSO = 5 V; = V; ; clamped inducive load; L = µh; R G = Ω C ies = 5 V; f = MHz, = V.8 nf p h a s e - o u d(on) = 7 V; I C = 5 5 ns d(off) = 5 V; R G = Ω 68 ns E on Inducive load; L = µh; 6 mj 5 mj R hjc. K/W R hch. K/W IXYS reserves he righ o change limis, es condiions and dimensions. 79a 7 IXYS ll righs reserved - 5

3 VVZB 5 Symbol Condiions Characerisic Values (, unless oherwise specified) min. yp. max. I R V R = V RRM ;.5 m V R = V; m V G V : I GT, : I GT, : I GT, = -4 C Fas Recovery Diode V F I F = ;.76 V V T For power-loss calculaions only. V r T = 5 C 6 mω I RM I F = 5 ; -di F /d = /µs; V R = V 5.5 rr I F = ; -di F /d = /µs; V R = V 4 ns R hjc.9 K/W R hch.5 K/W R kω R(T) = R B 5 e B 5/ T 98K 5/5 75 K NTC Symbol Condiions Maximum Raings C M 5 C T sg C V ISOL 5/6 Hz; = min 5 V~ I ISOL m; = s V~ Module M d Mouning orque.7... Nm d S Creep disance on surface.7 mm d Srike disance in air 9.6 mm a Maximum allowable acceleraion 5 m/s Weigh yp. 8 g Dimensions in mm ( mm =.94"). ( ) I GD, p h a s e - o u 4 4: P GV =.5 W 5: P GM = 5 W 6: P GM = W Fig. Gae rigger characerisics gd μs yp. Limi I G 5 6 m m Fig. Gae rigger delay ime I G IXYS reserves he righ o change limis, es condiions and dimensions. 79a 7 IXYS ll righs reserved - 5

4 VVZB 5 I T 5 5 I TSM Hz 8 % V RRM I s V R = V 75 4 = 45 C =45 C =5 C 5 5 =5 C =5 C P o Z hjc 5.7 K/W V. W 5 5 V T Fig. Forward curren versus volage drop per leg 6 9 I RMS s Fig. 4 Surge overload curren R hk K/W = Fig. 6 Power dissipaion versus direc oupu curren and ambien emperaure. T I TVM p h a s e - o u ms Fig. 5 I² versus ime (per hyrisor/diode) T C Fig. 7 Maximum forward curren a case emperaure... VVZB s Fig. 8 Transien hermal impedance juncion o case (per hyrisor/diode) Consans for Z hjc calculaion: R hi / (K/W) i / (s) IXYS reserves he righ o change limis, es condiions and dimensions. 79a 7 IXYS ll righs reserved 4-5

5 VVZB T I VJ C 9 I F 6 6 = 5V V V.5 V F Z hjc 9 mj 6 d(off) K/W... Fig. 9 Typ. oupu characerisics Fig. Typ. forward characerisics of free wheeling diode = 7 V = ±5 V R G = Ω I C f 9 ns 6 Fig. Typ. urn off energy and swiching imes versus collecor curren diode R mj Ω = 7 V = ±5 V I C = 5 d(off) f 4 5 Ω 6 p h a s e - o u IGBT R G Fig. Typ. urn off energy and swiching imes versus gae resisor ns single pulse s Fig. Typ. ransien hermal impedance VVZB C 5 T Fig. 4 Typ. hermisor resisance versus emperaure IXYS reserves he righ o change limis, es condiions and dimensions. 79a 7 IXYS ll righs reserved 5-5