p h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration

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1 MM 5-75X Dual Power MOSFET Module S = 75 5 = 5 =. mω Phaseleg Configuraion Gae Conrol Pi 9 Power Screw Terminals 9 MOSFET T + T Symbol Condiio Maximum Raings S = 5 C o 5 C 75 ± 5 T C = 5 C j 5 T C = C j I F5 I F T C = 5 C (diode) j T C = C (diode) j 5 Symbol Condiio Characerisic alues ( = 5 C, unless oherwise specified) min. yp. max. R DSon = ; = ; on chip level. mw (h) = ; =.5 m S = S ; = = 5 C.5 m DSS.5 m I GSS = ± ; =. µ C iss C oss C rss = ; = 5 ; f = MHz 5.. Q g Q gs Q gd = ; ; = d(on) d(off) f E rec d(on) d(off) f E rec inducive load = ; = ; =. Ω = 5 C = ex + R ou driver inducive load = ; = ; =. Ω = ex + R ou driver p h a s e - o u R hjc R hjh wih hea rafer pase (IXYS es seup).9 j addiional curren limiaion by exernal leads 9a IXYS ll righs reserved K/W K/W Feaures Trench MOSFETs - low R DSon - opimized inriic reverse diode package - low inducive curren pah - screw connecion o high curren main erminals - use of non inerchangeable connecors for auxiliary erminals possible - Kelvin source erminals for easy drive - isolaed DCB ceramic base plae pplicaio converers wih high power deiy for - main and auxiliary C drives of elecric vehicles - quadran DC drives - power supplies wih low inpu volage, e.g. from fuel cells or solar cells

2 MM 5-75X Source Drain Diode Symbol Condiio Characerisic alues min. yp. max. SD I F = ; = ; = 5 C r Q DS ; I F = rr di I F /d = /µs RM = 5 C r Q DS = 5 ; I F = rr di I F /d = 7 /µs RM Module Symbol Condiio Maximum Raings I RMS per main erminal 5 T sg ISOL I ISOL < m, 5/ Hz ~ M d Mouning orque Nm Terminal connecion orque (M) Nm Characerisic alues min. yp. max. R pin o chip * ). mw Weigh 5 g * ) = ( + R pin o chip ) Mx5 DIN d =. Ø.5.. µc µc C C p h a s e - o u Dimeio in mm ( mm =.9 ) Opional accessories for modules keyed win plugs (UL75, syle 5, CS class 55, guide --) Type ZYL wih wire lengh 5mm - for pi (yellow wire) and 5 (red wire) - for pi (yellow wire) and (red wire) Type ZYR wih wire lengh 5mm - for pi 7 (yellow wire) and (red wire) - for pi (yellow wire) and 9 (red wire).5±. 7.5±. 9.5±..5 9a IXYS ll righs reserved - 5

3 MM 5-75X.. SS = m S. normal..9 = 5 C Fig. 5 Drain source breakdown volage S versus juncion emperaure 7 = 5 C 5 = Fig. 5 = Typical rafer characerisics 7 = Fig. Oupu characerisics a = 5 C Fig. Oupu characerisics a p h a s e - o u normal. normalized incl. mouning resisance.. [mω] [mω] Fig. 5 normalized o = 5 value vs. juncion emperaure Fig. Drain source on-sae resisance versus 9a IXYS ll righs reserved - 5

4 MM 5-75X I G = m = 5 C Q G [] - T C, E rec [], E rec [] Fig. 7 Gae charge characerisics Fig. Drain curren versus case emperaure T C =. Ω = / x E rec(off) x E rec(on) d(on) d(on) [] Fig. 9 Typ. urn-on energy and swiching imes versus drain curren, inducive swiching = = / [] [] [] =. Ω = / d(off) d(off) f Fig. Typ. urn-off energy and swiching imes versus drain curren, inducive swiching p h a s e - o u = = / [] [] [Ω] [Ω] Fig. Typ. urn-on energy and swiching imes versus gae resisor, inducive swiching Fig. Typ. urn-off energy and swiching imes versus gae resisor, inducive swiching 9a IXYS ll righs reserved - 5

5 MM 5-75X R = 5 R = I RM Q rr [µc] r [] 5 7 /d [/µs] Fig. Reverse recovery curren I RM of he body diode vs. di/d R I F = 5 7 /d [/µs] Fig. 5 Reverse recovery ime r of he body diode vs. di/d I S /d [/µs] Fig. Reverse recovery charge Q rr of he body diode vs. di/d p h a s e - o u SD Fig. Source curren I S vs. source drain volage SD (body diode).9. R hjh..9.9 [K/W].. d(on).. d(off) f. [ms] Fig. 7 Definiion of swiching imes Fig. Typ. raien hermal impedance 9a IXYS ll righs reserved 5-5