NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
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- Angel Lewis
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1 June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize on-sae resisance. These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen, porable elecronics, and oher baery powered circuis where fas high-side swiching, and low in-line power loss are needed in a very small ouline surface moun package. - A, - V, R S(ON) =.4 = -.7 V R S(ON) =.3 = -4.5 V. Very low level gae drive requiremens allowing direc operaion in 3V circuis. (h) <.V. Proprieary package design using copper lead frame for superior hermal and elecrical capabiliies. High densiy cell design for exremely low R S(ON). Excepional on-resisance and maximum C curren capabiliy. Compac indusry sandard SOT-3 surface Moun package. G S Asolue Maximum Raings T A = unless oherwise noed Symbol Parameer NS33P Unis V SS rain-source Volage - V S Gae-Source Volage - Coninuous ±8 V I rain Curren - Coninuous (Noe a) - A - Pulsed - P Maximum Power issipaion (Noe a).5 W (Noe b).46,t STG Operaing and Sorage Temperaure Range -55 o 5 C THERMAL CHARACTERISTICS R θja Thermal Resisance, Juncion-o-Ambien (Noe a) 5 C/W R θjc Thermal Resisance, Juncion-o-Case (Noe ) 75 C/W 997 Fairchild Semiconducor Corporaion NS33P Rev. E
2 Elecrical Characerisics (T A = unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage = V, I = -5 µa - V I SS Zero Gae Volage rain Curren V S = -6 V, = V - µa = 55 C - µa I GSS Gae - Body Leakage Curren = 8 V, V S = V na I GSS Gae - Body Leakage Curren = -8 V, V S = V - na ON CHARACTERISTICS (Noe ) (h) Gae Threshold Volage V S =, I = -5 µa V = R S(ON) Saic rain-source On-Resisance = -.7 V, I = - A.35.4 Ω =.5.74 = -4.5 V, I = -. A.6.3 I (ON) On-Sae rain Curren = -.7 V, V S = -5 V -.5 A = -4.5 V, V S = -5 V -.5 g FS Forward Transconducance V S = -5 V, I = - A. S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = - V, = V, 95 pf C oss Oupu Capaciance f =. MHz 5 pf C rss Reverse Transfer Capaciance 4 pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = -6 V, I = - A, 8 5 ns r Turn - On Rise Time = -4.5 V, R GEN = 6 Ω 3 45 ns (off) Turn - Off elay Time 5 45 ns f Turn - Off Fall Time 7 45 ns Q g Toal Gae Charge V S = -5 V, I = - A, nc Q gs Gae-Source Charge = -4.5 V.5 nc Q gd Gae-rain Charge.9 nc NS33P Rev. E
3 Elecrical Characerisics (T A = unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Coninuous Source Curren -.4 A V S rain-source iode Forward Volage = V, I S = -.4 A (Noe ) V Noes:. R θja is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is deermined by he user's board design. P () = T A = T A = I R θja () R θjc +R θca () () R S(ON)@TJ Typical R θja using he board layous shown below on 4.5"x5" FR-4 PCB in a sill air environmen: a. 5 o C/W when mouned on a. in pad of oz copper. b. 7 o C/W when mouned on a. in pad of oz copper. a b Scale : on leer size paper. Pulse Tes: Pulse Widh < 3µs, uy Cycle <.%. NS33P Rev. E
4 Typical Elecrical Characerisics Figure. On-Region Characerisics. Figure. On-Resisance Variaion wih rain Curren and Gae Volage. R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE = -.7 V = -55 C I, RAIN CURRENT (A) Figure 3. On-Resisance Variaion wih Temperaure. Figure 4. On-Resisance Variaion wih rain Curren and Temperaure V S = - 3V T = -55 C J I, RAIN CURRENT (A) V, GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characerisics. Figure 6. Gae Threshold Variaion wih Temperaure. NS33P Rev.E
5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = -5µA T J, JUNCTION TEMPERATURE ( C) Figure 7. Breakdown Volage Variaion wih Temperaure. -I, REVERSE RAIN CURRENT (A)..5.. V = T = J -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. Body iode ForwardVolageVariaion wih Source Curren and Temperaure. CAPACITANCE (pf) f = MHz = V C iss C oss C rss -V GS, GATE-SOURCE VOLTAGE (V) I = -A V = -5V S -5V -V V, RAIN TO SOURCE VOLTAGE (V) S Q g, GATE CHARGE (nc) Figure 9. Capaciance Characerisics. Figure. Gae Charge Characerisics. V IN V R L d(on) on r 9% d(off) off 9% f V OUT V OUT % % R GEN G UT 9% S V IN % 5% 5% PULSE WITH INVERTE Figure. Swiching Tes Circui. Figure. Swiching Waveforms. NS33PRev. E
6 Typical Elecrical Characerisics (coninued) g, TRANSCONUCTANCE (SIEMENS) FS 4 V S =- 5V T = -55 C J I, RAIN CURRENT (A) I, RAIN CURRENT (A) RS(ON) LIMIT = -.7V SINGLE PULSE R θja = See Noe b T A = s C ms V S, RAIN-SOURCE VOLTAGE (V) s ms ms Figure 3. Transconducance Variaion wih rain Curren and Temperaure. Figure 4. Maximum Safe Operaing Area. STEAY-STATE POWER ISSIPATION (W) b a. 4.5"x5" FR-4 Board o T A = 5 C Sill Air oz COPPER MOUNTING PA AREA (in ) -I, STEAY-STATE RAIN CURRENT (A).4. b a.8 4.5"x5" FR-4 Board o T A = 5 C Sill Air V = -.7V GS oz COPPER MOUNTING PA AREA (in ) Figue 5. SuperSOT TM _ 3 Maximum Seady-Sae Power issipaion versus Copper Mouning Pad Area. Figure 6. Maximum Seady-Sae rain Curren versus Copper Mouning Pad Area. r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse R θja () = r() * R θja R θja = See Noe b - T A = P * R θja () uy Cycle, = / , TIME (sec) P(pk) Figure 7. Transien Thermal Response Curve. Noe : Characerizaion performed using he condiions described in noe b. Transien hermal response will change depending on he circui board design. NS33PRev. E
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