3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack
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1 ZB3-6ioX hyrisor Module M = 6 I = D FSM = 7 I 3~ ecifier Brake hopper ES = 2 I = 2 2 E(sa) =,8 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni + N Par number ZB3-6ioX Backside: isolaed / 3 2 9/2 4 6 N 2/3 4/ 6/7 8/ Feaures / dvanages: pplicaions: Package: E2-Pack Package wih DB ceramic Improved emperaure and power cycling Planar passivaed chips ery low forward volage drop ery low leakage curren N 3~ ecifier wih brake uni for drive inverers Isolaion olage: 36 ~ Indusry sandard ouline ohs complian Soldering pins for PB mouning Heigh: 7 mm Base plae: DB ceramic educed weigh dvanced power cycling erms ondiions of usage: he daa conained in his produc daa shee is exclusively inended for echnically rained saff. he user will have o evaluae he suiabiliy of he produc for he inended applicaion and he compleeness of he produc daa wih respec o his applicaion. he specificaions of our componens may no be considered as an assurance of componen characerisics. he informaion in he valid applicaion- and assembly noes mus be considered. Should you require produc informaion in excess of he daa given in his produc daa shee or which concerns he specific applicaion of your produc, please conac he sales office, which is responsible for you. Due o echnical requiremens our produc may conain dangerous subsances. For informaion on he ypes in quesion please conac he sales office, which is responsible for you. Should you inend o use he produc in aviaion, in healh or live endangering or life suppor applicaions, please noify. For any such applicaion we urgenly recommend - o perform join risk and qualiy assessmens; - he conclusion of qualiy agreemens; - o esablish join measures of an ongoing produc survey, and ha we may make delivery dependen on he realizaion of any such measures. 2 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 294d
2 ZB3-6ioX ecifier Symbol I I SM/DSM M/DM /D Definiion ondiions = 6 = 6 = aings yp. max. 7 forward volage drop I =,32 D I = I = I = = 8 hreshold volage =,88 for power loss calculaion only r slope resisance 7,3 mω hermal resisance juncion o case,6 K/W hj P o oal power dissipaion 9 W P GM P G = 2 I SM max. forward surge curren = ms; ( Hz), sine = 4 = 8,3 ms; (6 Hz), sine = J juncion capaciance = 4 f = MHz 32 max. gae power dissipaion P= 3 µs = average gae power dissipaion = ms; ( Hz), sine = 8,3 ms; (6 Hz), sine min. 6 2,92,26,96 = 3 µs P = I² value for fusing = ms; ( Hz), sine = 4 (di/d) cr bridge oupu curren criical rae of rise of curren recangular d = ⅓ = 8,3 ms; (6 Hz), sine = ms; ( Hz), sine = 8,3 ms; (6 Hz), sine = = = = =, Uni µ m k²s k²s k²s k²s pf = ; f = Hz P= 2 µs; di G /d =,4 /µs; IG =,4; = ⅔ repeiive, I = (dv/d) criical rae of rise of volage = ⅔ DM = cr max. non-repeiive reverse/forward blocking volage max. repeiive reverse/forward blocking volage reverse curren, drain curren /D /D hh hermal resisance case o heasink, GK = ; mehod (linear volage rise) G gae rigger volage = 6 D DM = ,4 2,37,77,73 W W W /µs /µs /µs,4 I G gae rigger curren D = 6 = 2 8 m = -4,6 2 m GD gae non-rigger volage = ⅔ =,2 D DM I GD gae non-rigger curren m I L laching curren µs p = = 2 4 m IG =,4; di G /d =,4 /µs I H holding curren D = 6 GK = = 2 m gd gae conrolled delay ime = ½ = 2 2 µs D DM IG =,4; di G /d =,4/µs non-repe., I = q urn-off ime = ; I = ; = ⅔ DM = 2 µs di/d = /µs dv/d = 2 /µs p = 2 µs K/W 2 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 294d
3 ZB3-6ioX Brake IGB Symbol ES GES GEM 2 8 Definiion collecor emier volage collecor curren ondiions = 2 max. 2 P o oal power dissipaion = 2 39 W E(sa) collecor emier sauraion volage = 7 ; GE = = 2,8 2, GE(h) gae emier hreshold volage I = 3 m; = ES collecor emier leakage curren = ; = I GES BSO max. D gae volage max. ransien gae emier volage min. aings yp Uni 6, urn-on delay ime 7 ns reverse bias safe operaing area GE E E ES GE gae emier leakage curren = ±2 GE = 8 = 2 = 2, 2, 6, ±2 ±3,2 22 m,6 m QG(on) oal gae charge E = 6 ; GE = ; = 7 23 n E E d(on) r d(off) f on off M SSO S curren rise ime urn-off delay ime curren fall ime urn-on energy per pulse urn-off energy per pulse shor circui safe operaing area shor circui duraion inducive load = 6 ; I = 7 E = ± ; = Ω GE = ± ; = Ω GE EK = 2 EK = 2 = 9 ; = ± E G G GE = 2 4 ns 2 ns ns 6,8 mj 8,3 mj I shor circui curren S G = Ω; non-repeiive 3 hj hh hermal resisance juncion o case hermal resisance case o heasink = 2,,32 n µs K/W K/W Brake Diode M 2 max. repeiive reverse volage forward curren 8 = 8 F forward volage I = 3 I reverse curren = M Q I rr M rr reverse recovery charge max. reverse recovery curren reverse recovery ime F = -di /d = F I = F 6 3 4/µs = 2 = 2 = ,7,99,2 m m,8 µ 23 ns hj hermal resisance juncion o case,9 K/W hh hermal resisance case o heasink,3 K/W 2 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 294d
4 ZB3-6ioX Package aings Symbol Definiion ondiions min. yp. max. Uni I MS MS curren per erminal 2 virual juncion emperaure -4 op operaion emperaure -4 2 Weigh M D dspp/pp dspb/pb E2-Pack sg sorage emperaure -4 2 ISOL mouning orque 3 creepage disance on surface sriking disance hrough air isolaion volage = second = minue erminal o erminal erminal o backside /6 Hz, MS; I ISOL m 6, 2, g Nm mm mm 2D Daa Marix XXXXXXXXXX yywwx Logo UL Par number Dae ode Locaion Ordering Sandard Ordering Number Marking on Produc Delivery Mode Quaniy ode No. ZB3-6ioX ZB3-6ioX Box 6 34 emperaure Sensor N Symbol Definiion ondiions min. yp. max. 2 resisance = 2 4,7 B 2/ emperaure coefficien 337,2 Equivalen ircuis for Simulaion * on die level = Uni kω K 4 [ ] 3 I hyrisor Brake IGB max hreshold volage,88 max slope resisance * 4,, 7,9 Brake Diode,3 8 mω [ ] yp. N resisance vs. emperaure 2 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 294d
5 ZB3-6ioX Oulines E2-Pack +, -,3 Dimensions w/o olerances acc. DIN ISO m / 3 2 9/2 4 6 N 2/3 4/ 6/7 8/ IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 294d
6 ZB3-6ioX hyrisor = = 2 = F [] Fig. Forward curren vs. volage drop per hyrisor SM 4 3 = = 4 Hz, 8% M 2... [s] Fig. 2 Surge overload curren vs. ime per hyrisor I 2 [ 2 s] = 4 = [ms] Fig. 3 I 2 vs. ime per hyrisor G [] : I GD, = 2: I G, = 2 3: I G, = gd [μs] yp. Limi = I ()M D = I G [m] 4: P G =. W : P GM = W 6: P GM = W Fig. 4 Gae rigger characerisics I G [m] Fig. Gae conrolled delay ime [ ] Fig. Max. forward curren vs. case emperaure per hyrisor P o [W] 8 6 D = Fig. 4 Power dissipaion vs. forward curren and ambien emperaure per hyrisor h :.2 K/W.4 K/W.6 K/W.8 K/W. K/W 2. K/W Z hj onsans for Z hj calc.: 4 i h (K/W) i (s) [K/W] I ()M amb [ ] [ms] Fig. 6 ransien hermal impedance juncion o case vs. ime per hyrisor 2 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 294d
7 ZB3-6ioX Brake IGB 2 GE = 2 GE = = 2 7 = = = 2 2 = E [] Fig. yp. oupu characerisics E [] Fig. 2 yp. oupu characerisics Fig. 3 GE [] yp. ranfer characerisics GE [] 2 = 7 E = Q G [n] Fig. 4 yp. urn-on gae charge E [mj] G = E = 6 GE = ± = 2 E off [mj] 7 E on = 7 E on 6 E = 6 GE = ± Fig. yp. swiching energy versus collecor curren E 9 8 E off G [ ] = 2 Fig. 6 yp. swiching energy versus gae resisance Z hj. [K/W] [s] Fig. 7 yp. ransien hermal impedance juncion o case 2 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 294d
8 ZB3-6ioX Brake Diode = F ] Fig. Forward curren vs. F Q r [μ] = 2 = 8 = 6 3 [ -di /d [/μs] F Fig. 2 yp. reverse recovery charge Q r versus -di F /d I M = 6 3 = 2 = di F /d [/μs] Fig. 3 yp. peak reverse curren I M versus -di F /d K f I M Q rr [ns] = 2 = 8 = F 6 [] 4 2 = 2 = rr.6 [μs] [ ] Fig. 4 Dynamic parameers Q r, I M versus di F /d [/μs] Fig. yp. recovery ime rr versus -di F /d F di F /d [/μs] Fig. 6 yp. peak forward volage F and fr versus di F /d rr Z hj. [K/W]... [s]. Fig. 7 ransien hermal impedance juncion o case i i i [K/W] [s] IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 294d
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