Silicon Diffused Power Transistor

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1 GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper diode in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance o base drive and collecor curren load variaions resuling in a very low wors case dissipaion. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collecor-emier volage peak value V BE = 0 V V V CEO Collecor-emier volage (open base) V I C Collecor curren (DC) - 8 A I CM Collecor curren peak value - 5 A P o Toal power dissipaion T hs 25 C - 45 W V CEsa Collecor-emier sauraion volage I C = 4.5 A; I B =.29 A -.0 V V CEsa Collecor-emier sauraion volage I C = 4.5 A; I B =. A V I Csa Collecor sauraion curren A V F Diode forward volage I F = 4.5 A V f Fall ime I Csa = 4.5 A; I B(end) =. A µs PINNING - SOT399 PIN CONFIGURATION SYMBOL PIN base DESCRIPTION case c 2 collecor 3 emier b Rbe case isolaed 2 3 e LIMITING VALUES Limiing values in accordance wih he Absolue Maximum Raing Sysem (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collecor-emier volage peak value V BE = 0 V V V CEO Collecor-emier volage (open base) V I C Collecor curren (DC) - 8 A I CM Collecor curren peak value - 5 A I B Base curren (DC) - 4 A I BM Base curren peak value - 6 A -I B(AV) Reverse base curren average over any 20 ms period - 0 ma -I BM Reverse base curren peak value - 5 A P o Toal power dissipaion T hs 25 C - 45 W T sg Sorage emperaure C T j Juncion emperaure - 50 C Turn-off curren. Ocober 2002 Rev 3.000

2 THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R h j-hs Juncion o heasink wihou heasink compound K/W R h j-hs Juncion o heasink wih heasink compound K/W R h j-a Juncion o ambien in free air 35 - K/W ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repeiive peak volage from all R.H. 65 % ; clean and dusfree V hree erminals o exernal heasink C isol Capaciance from T2 o exernal f = MHz pf heasink STATIC CHARACTERISTICS T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collecor cu-off curren 2 V BE = 0 V; V CE = V CESMmax ma I CES V BE = 0 V; V CE = V CESMmax ; ma T j = 25 C I EBO Emier cu-off curren V EB = 7.5 V; I C = 0 A ma BV EBO Emier-base breakdown volage I B = 600 ma V R be Base-emier resisance V EB = 7.5 V Ω V CEOsus Collecor-emier susaining volage I B = 0 A; I C = 0 ma; V L = 25 mh V CEsa Collecor-emier sauraion volages I C = 4.5 A; I B =. A V V CEsa I C = 4.5 A; I B =.29 A V V BEsa Base-emier sauraion volage I C = 4.5 A; I B =.7 A V h FE DC curren gain I C = A; V CE = 5 V h FE I C = 4.5 A; V CE = V V F Diode forward volage I F = 4.5 A V DYNAMIC CHARACTERISTICS T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collecor capaciance I E = 0 A; V CB = V; f = MHz 80 - pf Swiching imes (6 khz line I Csa = 4.5 A; I B(end) =. A; L B = 6 µh; deflecion circui) -V BB = 4 V; (-di B /d = 0.6 A/µs) s Turn-off sorage ime µs f Turn-off fall ime µs Swiching imes (38 khz line I Csa = 4.0 A; I B(end) = 0.9 A; L B = 6 µh; deflecion circui) -V BB = 4 V; (-di B /d = 0.6 A/µs) s Turn-off sorage ime µs f Turn-off fall ime µs 2 Measured wih half sine-wave volage (curve racer). Ocober Rev 3.000

3 IC TRANSISTOR DIODE ICsa 0 h FE IB IBend T j = 25 C T j = 25 C 5 V 20us 26us VCE 64us Fig.. Swiching imes waveforms. V Fig.4. Typical DC curren gain. h FE = f (I C ) parameer V CE IC ICsa 90 %.2. VBESAT / V % f s IB IBend - IBM Fig.2. Swiching imes definiions IC/IB= Fig.5. Typical base-emier sauraion volage. V BE sa = f (I C ); parameer I C /I B IBend -VBB LB D.U.T v nominal adjus for ICsa mh 2nF Fig.3. Swiching imes es circui. Rbe VCESAT / V IC/IB= Fig.6. Typical collecor-emier sauraion volage. V CE sa = f (I C ); parameer I C /I B 3 Ocober Rev 3.000

4 VBESAT / V IC= 6A 4.5A 3A 2A Fig.7. Typical base-emier sauraion volage. V BE sa = f (I B ); parameer I C s, f / us s A IC = 4.5A 2 f 0 0. Fig.. Typical collecor sorage and fall ime. s = f (I B ); f = f (I B ); parameer I C ; T j = 85 C; f = 6 khz 0. VCESAT / V IC=2A 3A 4.5A 0. Fig.8. Typical collecor-emier sauraion volage. V CE sa = f (I B ); parameer I C 6A PD% Normalised Power Deraing wih heasink compound Ths / C Fig.. Normalised power dissipaion. PD% = 0 P D /P D 25 C = f (T hs ) 00 Eoff / uj IC = 4.5A 0 3.5A 0. Fig.9. Typical urn-off losses. T j = 85 C Eoff = f (I B ); parameer I C ; f = 6 khz Ocober Rev 3.000

5 0 0 ICM max IC max = 0.0 p = ICM max IC max = 0.0 p = II us II us Po max 0 us Po max 0 us 0. I ms 0. I ms ms ms DC DC VCE / V Fig.2. Forward bias safe operaing area. T hs = 25 C I Region of permissible DC operaion. II Exension for repeiive pulse operaion. NB: Mouned wih heasink compound and 30 ± 5 newon force on he cenre of he envelope VCE / V Fig.3. Forward bias safe operaing area. T hs = 25 C I Region of permissible DC operaion. II Exension for repeiive pulse operaion. NB: Mouned wihou heasink compound and 30 ± 5 newon force on he cenre of he envelope. Ocober Rev 3.000

6 MECHANICAL DATA Dimensions in mm Ne Mass: 5.88 g 6.0 max 5.8 max max 22.5 max min 2.2 max M max Noes. Refer o mouning insrucions for F-pack envelopes. 2. Epoxy mees UL94 V0 a /8". Fig.4. SOT399; The seaing plane is elecrically isolaed from all erminals. Ocober Rev 3.000

7 DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS 3 STATUS 4 Objecive daa Developmen This daa shee conains daa from he objecive specificaion for produc developmen. Philips Semiconducors reserves he righ o change he specificaion in any manner wihou noice Preliminary daa Qualificaion This daa shee conains daa from he preliminary specificaion. Supplemenary daa will be published a a laer dae. Philips Semiconducors reserves he righ o change he specificaion wihou noice, in order o improve he design and supply he bes possible produc Produc daa Producion This daa shee conains daa from he produc specificaion. Philips Semiconducors reserves he righ o make changes a any ime in order o improve he design, manufacuring and supply. Changes will be communicaed according o he Cusomer Produc/Process Change Noificaion (CPCN) procedure SNW-SQ-650A Limiing values Limiing values are given in accordance wih he Absolue Maximum Raing Sysem (IEC 34). Sress above one or more of he limiing values may cause permanen damage o he device. These are sress raings only and operaion of he device a hese or a any oher condiions above hose given in he Characerisics secions of his specificaion is no implied. Exposure o limiing values for exended periods may affec device reliabiliy. Applicaion informaion Where applicaion informaion is given, i is advisory and does no form par of he specificaion. Philips Elecronics N.V All righs are reserved. Reproducion in whole or in par is prohibied wihou he prior wrien consen of he copyrigh owner. The informaion presened in his documen does no form par of any quoaion or conrac, i is believed o be accurae and reliable and may be changed wihou noice. No liabiliy will be acceped by he publisher for any consequence of is use. Publicaion hereof does no convey nor imply any license under paen or oher indusrial or inellecual propery righs. LIFE SUPPORT APPLICATIONS These producs are no designed for use in life suppor appliances, devices or sysems where malfuncion of hese producs can be reasonably expeced o resul in personal injury. Philips cusomers using or selling hese producs for use in such applicaions do so a heir own risk and agree o fully indemnify Philips for any damages resuling from such improper use or sale. 3 Please consul he mos recenly issued daashee before iniiaing or compleing a design. 4 The produc saus of he device(s) described in his daashee may have changed since his daashee was published. The laes informaion is available on he Inerne a URL hp:// Ocober Rev 3.000

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision