Silicon Diffused Power Transistor

Transcription

1 PHE139 GENERAL DESCRIPTION The PHE139 is a silicon npn power switching transistor in the TO22AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = V - 7 V V CBO Collector-Base voltage (open emitter) - 7 V V CEO Collector-emitter voltage (open base) - 4 V I C Collector current (DC) - 12 A I CM Collector current peak value - 24 A P tot Total power dissipation T mb 25 C - 8 W V CEsat Collector-emitter saturation voltage I C = 5. A;I B = 1. A V h FEsat t f Fall time I C = 5. A; V CE = 5 V I C = 5. A; I B1 = 1. A µs PINNING - TO22AB PIN CONFIGURATION SYMBOL PIN 1 base DESCRIPTION tab c 2 collector 3 emitter b tab collector e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector to emitter voltage V BE = V - 7 V V CEO Collector to emitter voltage (open base) - 4 V V CBO Collector to base voltage (open emitter) - 7 V I C Collector current (DC) - 12 A I CM Collector current peak value - 24 A I B Base current (DC) - 6 A I BM Base current peak value - 12 A P tot Total power dissipation T mb 25 C - 8 W T stg Storage temperature C T j Junction temperature - 15 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base K/W R th j-a Junction to ambient in free air 6 - K/W March Rev 1.

2 PHE139 STATIC CHARACTERISTICS T mb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES,I CBO Collector cut-off current 1 V BE = V; V CE = V CESMmax ma I CES V BE = V; V CE = V CESMmax ; ma T j = 125 C I CEO Collector cut-off current V CEO = V CEOMmax (4V) ma I EBO Emitter cut-off current V EB = 9 V; I C = A ma V CEOsust Collector-emitter sustaining voltage I B = A; I C = 1 ma; V L = 25 mh V CEsat Collector-emitter saturation voltage I C = 5. A;I B = 1. A V I C = 8. A;I B = 1.6 A V V BEsat Base-emitter saturation voltage I C = 5. A;I B = 1. A V I C = 8. A;I B = 1.6 A V h FE DC current gain I C = 5. A; V CE = 5 V 8-4 h FEsat I C = 8. A; V CE = 5 V 6-3 DYNAMIC CHARACTERISTICS T mb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) I Con = 5 A; I Bon = -I Boff = 1 A; R L = 75 ohms; V BB2 = 4 V; t s Turn-off storage time µs t f Turn-off fall time.26.7 µs Switching times (inductive load) I Con = 5 A; I Bon = 1 A; L B = 1 µh; -V BB = 5 V t s Turn-off storage time µs t f Turn-off fall time.1.5 µs Switching times (inductive load) I Con = 5A; I Bon = 1 A; L B = 1 µh; -V BB = 5 V; T j = 1 C t s Turn-off storage time µs t f Turn-off fall time -.9 µs 1 Measured with half sine-wave voltage (curve tracer). March Rev 1.

3 PHE v 1-2R 9 % ICon 9 % IC 1 % Horizontal Oscilloscope Vertical 3R 1R 6V 3-6 Hz Fig.1. Test circuit for V CEOsust. ts ton tf toff IBon IB 1 % tr 3ns -IBoff Fig.4. Switching times waveforms with resistive load. IC / ma VCC 25 LC 1 1 VCE / V min VCEOsust Fig.2. Oscilloscope display for V CEOsust. IBon -VBB LB T.U.T. Fig.5. Test circuit inductive load. V CC = 3 V; -V BE = 5 V; L C = 2 uh; L B = 1 uh VCC ICon 9 % IC RL VIM tp RB T.U.T. IB ts toff IBon tf 1 % t T t Fig.3. Test circuit resistive load. V IM = -6 to +8 V V CC = 25 V; t p = 2 µs; δ = t p / T =.1. R B and R L calculated from I Con and I Bon requirements. -IBoff Fig.6. Switching times waveforms with inductive load. March Rev 1.

4 PHE PD% Normalised Power Derating Tmb / C Fig.7. Normalised power dissipation. PD% = 1 PD/PD 25 C = f (T mb ) VBEsat VOLTAGE/V IC/IB = IC, COLLECTOR CURRENT/A Fig.1. Base-Emitter saturation voltage. Solid lines = typ values, V BEsat = f(ic); at IC/IB =5. HFE 5 VCEsat VOLTAGE/V V 15 1V IC/IB = IC/A Fig.8. Typical DC current gain. h FE = f(i C ) parameter V CE IC, COLLECTOR CURRENT/A Fig.11. Collector-Emitter saturation voltage. Solid lines = typ values, V CEsat = f(ic); at IC/IB =5. VCEsat/V 2 Zth / (K/W) D= tp t PD p.2 D = T IB/A Fig.9. Collector-Emitter saturation voltage. Solid lines = typ values, V CEsat = f(ib); T j =25 C. 1A 3A 2A 4A T t.1 1E-6 1E-4 1E-2 1E+ t / s Fig.12. Transient thermal impedance. Z th j-mb = f(t); parameter D = t p /T March Rev 1.

5 PHE139 IC/A 14 VCC LC VCL(RBSOAR) 6-5V IBon LB PROBE POINT 4-3V 2-1V -VBB T.U.T VCEclamp/V Fig.13. Reverse bias safe operating area (T j < T jmax ) for -V be = 5V,3V and 1V. Fig.14. Test circuit for reverse bias safe operating area. V clamp < 7V; V cc = 15V; -V be = 5V,3V & 1V; L B = 1µH; L C = 2µH March Rev 1.

6 PHE139 MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 1,3 max 3,7 1,3 2,8 5,9 min 15,8 max 3, max not tinned 1,3 max (2x) ,54 2,54 3, 13,5 min,9 max (3x),6 2,4 Notes 1. Refer to mounting instructions for TO22 envelopes. 2. Epoxy meets UL94 V at 1/8". Fig.15. TO22AB; pin 2 connected to mounting base. March Rev 1.

7 PHE139 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March Rev 1.

8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: PHE139,127 PHE139/DG,127