BCR10CM. Triac 10 Amperes/ Volts ➀ T1 TERMINAL ➃ T2 TERMINAL E L C D A H P M OUTLINE DRAWING
|
|
- Brendan Heath
- 5 years ago
- Views:
Transcription
1 BCR1CM Powerex, Inc., 2 Hillis Sree, Youngwood, Pennsylvania (412) mperes/4-6 Vols OUTLINE DRWING C ➃ D E L H G Ouline Drawing (Conforms o TO-22) Dimensions Inches Millimeers.63 Max. 16. Max. B.49 Max Max. C.41 Max. 1.5 Max. D E F.15 Max. 3.8 Max. G B F.142 ±.8 Dia. 3.6 ±.2 Dia. H.125 ± ±.2 ➀➁➂ CONNECTION DIGRM J ➀ T1 TERMINL ➁ T2 TERMINL ➂ GTE ➃ T2 TERMINL N P M K J E ➁➃ ➂ ➀ Dimensions Inches Millimeers J K L M N P.31.8 Q.2.5 Descripion: riac is a solid sae silicon C swich which may be gae riggered from an off-sae o an on-sae for eiher polariy of applied volage. Feaures: Glass Passivaion Excellen Surge Capabiliy Seleced for Inducive Loads pplicaions: C Swich Heaing Moor Conrols Lighing Solid Sae Relay Ordering Informaion: Example: Selec he complee eigh, nine or en digi par number you desire from he able - i.e. BCR1CM-8 is a 4 Vol, 1 mpere V DRM Inducive Type Vols Code Load* BCR1CM 4-8 L 6-12 *For inducive load, add L. T-45
2 Powerex, Inc., 2 Hillis Sree, Youngwood, Pennsylvania (412) BCR1CM 1 mperes/4-6 Vols bsolue Maximum Raings, T a = 25 C unless oherwise specified Raings Symbol BCR1CM-8 BCR1CM-12 Unis Repeiive Peak Off-sae Volage V DRM 4 6 Vols Non-repeiive Peak Off-sae Volage V DSM 5 72 Vols On-sae Curren, T c = 13 C, T c = 93 C I T(RMS) 1 1 mperes Non-repeiive Peak Surge, One Cycle (6 Hz) I TSM 1 1 mperes I 2 for Fusing, = 8.3 msec I sec Peak Gae Power Dissipaion, 2 sec P GM 5 5 Was verage Gae Power Dissipaion P G(avg).5.5 Was Peak Gae Curren I GM 2 2 mperes Peak Gae Volage V GM 1 1 Vols Sorage Temperaure T sg -4 o o 125 C Operaing Temperaure T j -4 o o 125 C Weigh Grams T-46
3 Powerex, Inc., 2 Hillis Sree, Youngwood, Pennsylvania (412) BCR1CM 1 mperes/4-6 Vols Elecrical and Thermal Characerisics, T j = 25 C unless oherwise specified Tes Condiions (Trigger Mode) BCR1CM Characerisics Symbol V D R L R G T j Min. Typ. Max. Unis Gae Parameers DC Gae Trigger Curren MT2+ Gae+ 6V C 3 m MT2+ Gae I GT 6V C 3 m MT2 Gae 6V C 3 m DC Gae Trigger Volage MT2+ Gae+ 6V C 1.5 Vols MT2+ Gae V GT 6V C 1.5 Vols MT2 Gae 6V C 1.5 Vols DC Gae Non-rigger Volage ll V GD 1/2 V DRM 125 C.2 Vols T-47
4 Powerex, Inc., 2 Hillis Sree, Youngwood, Pennsylvania (412) BCR1CM 1 mperes/4-6 Vols Elecrical and Thermal Characerisics, T j = 25 C unless oherwise specified Characerisics Symbol Tes Condiions Min. Typ. Max. Unis Thermal Resisance, Juncion-o-case R h(j-c) 1.8 C/W Volage Blocking Sae Maximums I DRM V DRM = Maximum llowable 2 m Repeiive Off-sae Curren Repeiive Off-sae Volage Raing, Gae Open Circuied, T j = 125 C Curren Conducing Sae Maximums V TM T c = 25 C, 1.5 Vols Peak On-sae Volage I TM = 15 Criical Rae-of-rise of Commuaing (dv/d) c V/ s Off-sae Volage (Commuaing dv/d) for inducive load (L) Commuaing dv/d, (dv/d) c Commuaing Volage & Par V DRM (V/ sec) Curren Waveform Number (Vols) Minimum Tes Condiion (Inducive Load) BCR1CM-8L 4 1 T j = 125 C, BCR1CM-12L 6 1 Rae of Decay On-sae Commuaing Curren (di/d) c = -5/msec: Peak Off-sae Volage V D = 4V SUPPLY VOLTGE MIN CURRENT MIN VOLTGE (dv/d) C V D V D (di/d) C T-48
5 Powerex, Inc., 2 Hillis Sree, Youngwood, Pennsylvania (412) BCR1CM 1 mperes/4-6 Vols INSTNTNEOUS ON-STTE VOLTGE, V T, (VOLTS) MXIMUM ON-STTE CHRCTERISTICS T j = 25 o C T j = 125 o C INSTNTNEOUS ON-STTE CURRENT, I T, (MPERES) TRNSIENT THERML IMPEDNCE, Z h(j-c), ( C/WTT) TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION-TO-CSE) CYCLES T 6 Hz GTE VOLTGE, V G, (VOLTS) V GM = 1V V GT = 1.5V GTE CHRCTERISTICS (I, II, III) I RGT I, I FGT I, I RGT III P G(avg) =.5W P GM = 5W I GM = 2 V GD =.2V GTE CURRENT, I G, (m) MXIMUM PEK SURGE CURRENT, I TSM, (MPERES) MXIMUM SURGE CURRENT FOLLOWING RTED LOD CONDITIONS CYCLES T 6 Hz CSE TEMPERTURE, T C, ( C) LLOWBLE CSE TEMPERTURE VS. RMS ON-STTE CURRENT FOR C CONTROL THIS GRPH NERLY PPLIES REGRDLESS OF THE CONDUCTION NGLE 36 CONDUCTION RESISTIVE, INDUCTIVE LODS MBIENT TEMPERTURE, T a, ( C) LLOWBLE MBIENT TEMPERTURE VS. RMS ON-STTE CURRENT FIN: PLTE PINTED BLCK WITH GRESE CURVES PPLY REGRDLESS OF THE CONDUCTION NGLE 6 x 6 x x 1 x x 12 x RESISTIVE, 2 INDUCTIVE LODS NTURL CONVECTION MBIENT TEMPERTURE, T a, ( C) LLOWBLE MBIENT TEMPERTURE VS. RMS ON-STTE CURRENT NTURL CONVECTION, NO FIN CURVES PPLY REGRDLESS OF THE CONDUCTION NGLE RESISTIVE, INDUCTIVE LODS MXIMUM POWER DISSIPTION, (WTTS) CONDUCTION RESISTIVE, INDUCTIVE LODS MXIMUM ON-STTE POWER DISSIPTION GTE TRIGGER CURRENT, ( C) GTE TRIGGER CURRENT, (25 C) x 1% GTE TRIGGER CURRENT I FGT I I RGT I I RGT III T-49
6 Powerex, Inc., 2 Hillis Sree, Youngwood, Pennsylvania (412) BCR1CM 1 mperes/4-6 Vols 1 3 GTE TRIGGER VOLTGE 1 3 HOLDING CURRENT 16 BREKOVER VOLTGE x 1% GTE TRIGGER VOLTGE, ( C) GTE TRIGGER VOLTGE, (25 C) 1 2 HOLDING CURRENT, I H, (m) 1 2 BREKOVER VOLTGE, ( C) BREKOVER VOLTGE, (25 C) x 1% x 1% BREKOVER VOLTGE, (dv/d = x V/ s) BREKOVER VOLTGE, (dv/d = 1V/ s) BREKOVER VOLTGE VS. RTE OF RISE OF OFF-STTE VOLTGE T j = 125 C I QUDRNT III QUDRNT # RTE OF RISE OF OFF-STTE VOLTGE, dv/d, (V/ s) 1 3 #2 GTE TRIGGER CURRENT VS. GTE CURRENT PULSE WIDTH REPETITIVE PEK OFF-STTE CURRENT, ( C) REPETITIVE PEK OFF-STTE CURRENT, (25 C) x 1% REPETITIVE PEK OFF-STTE CURRENT GTE TRIGGER CHRCTERISTICS TEST CIRCUITS 6 6 CRITICL RTE OF RISE OF OFF-STTE COMMUTTING VOLTGE, (V/ s) COMMUTTION CHRCTERISTICS T j = 125 o C I T = 4 = 5 s V D = 2V f = 3Hz MINIMUM CHRC- TERISTICS VLUE VOLTGE WVEFORM (dv/d) c V D CURRENT WVEFORM I QUDRNT RTE OF DECY OF ON-STTE COMMUTTING CURRENT, (/ms) I T (di/d) c III QUDRNT GTE TRIGGER CURRENT, ( w ) GTE TRIGGER CURRENT, (DC) x 1% 1 2 T j = 25 C I FGT I I RGT I I RGT III GTE CURRENT PULSE WIDTH, w, ( s) 6V V TEST PROCEDURE I 6 6V V TEST PROCEDURE III R G R G 6V V TEST PROCEDURE II R G T-5
Low Power Use Non-Insulated Type,Glass Passivation Type CR08AS VRRM V VRSM V VR(DC) V VDRM V
Low Power Use Non-Insulated Type,Glass Passivation Type CR8S Features 1..1 IT(V) :.8 VDRM :4V/6V IGT :1.4.1.46.1 1.GTE.NODE.CTHODE bsolute Maximum Ratings Ta = Parameter Symbol CR8S-8 CR8S-1 Repetitive
More information5STF 07T1414 Old part no. TR 907FC
5STF 7T1414 Medium Frequency Thyrisor Properies 5STF 7T1414 Old par no. TR 97FC-74-14 Key Parameers Amplifying gae V DRM, V RRM = 1 4 V High operaional capabiliy I TAV = 736 A Opimized urn-on and urn-off
More information5STF 11F3010 Old part no. TR Fast Thyristor
5STF 11F31 5STF 11F31 Old par no. TR 918-111-3 Fas Thyrisor Properies Key Parameers Amplifying gae V DRM, V RRM = 3 V High operaional capabiliy I TAV = 1 11 A Opimized urn-off parameers I TSM = 1. ka V
More information5STF 28H2060. Fast Thyristor. VDRM, VRRM = V High operational capability. ITAV = A Optimized turn-off parameters
5STF 28H26 5STF 28H26 Fas Thyrisor Properies Key Parameers Amplifying gae VDRM, VRRM = 2 V High operaional capabiliy ITAV = 2 667 A Opimized urn-off parameers ITSM = 46.5 ka VTO = 1.198 V Applicaions rt
More informationp h a s e - o u t Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VVZB 135 = 1600 V = 135 A Recommended replacement:
VVZB 5 Three Phase Recifier Bridge wih IGBT and Fas Recovery Diode for Braking Sysem V RRM I dvm = 6 V = 5 V RRM Type + 6 5 4 NTC 9 + V 6 VVZB 5-6 NO 6+7 4+5 + Symbol Condiions Maximum Raings V RRM 6 V
More informationnot Recommend for New Design TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE
PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, E lectric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM 9. K G K1 1. 0 0 M G1 φ6. 1. 6 Tab#,
More informationS G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA
ON473 2V PChannel MOSFET wih Schoky Diode General Descripion The ON473 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. Schoky diode is provided o faciliae he implemenaion
More informationQxx15xx & Qxx16xHx Series
Teccor brand Thyristors Description 15 mp and 16 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,
More informationFeatures / Advantages: Applications: Package: SMPD
X0PLB XP GB x CES C CE(sa). SOPLUS Surface Moun Power Device Phase leg SCR / GB Par number X0PLB Backside: isolaed E664 6 4 Feaures / dvanages: pplicaions: Package: SMPD XP GB - low sauraion volage - posiive
More informationV DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2
3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = x 1 I C = 9 =. CE(sa) Phase leg Par number MII7-13 1 Backside: isolaed 7 3 Feaures / dvanages: pplicaions: Package: Y NPT IGBT echnology low sauraion volage low swiching losses
More information30 to 35 ma G. Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 80 C 20 A I T(AV)
Sxx20x & Sxx25x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
More informationXPT IGBT Module MIXA450PF1200TSF. Phase leg + free wheeling Diodes + NTC MIXA450PF1200TSF. Part number
XPT IGBT Module CS 2x 12 I C25 1.8 C(sa) Phase leg + free wheeling Diodes + NTC Par number Backside: isolaed 5 2 1 8 7 9 3 4 /11 Feaures / dvanages: pplicaions: Package: SimBus F High level of inegraion
More informationTeccor brand Thyristors Silicon Controlled Rectifiers
Description New device series offers high static dv/dt and lower turn off (t q ) sensitive SCR with its small die planar construction SCRs junctions are glass-passivated to ensure long term reliability
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C25 = 16 = 2.2 CE(sa) Buck Chopper + free wheeling Diode Par number MDI145-123 Backside: isolaed 1 7 6 3 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C2 = 16 = 2.2 CE(sa) Boos Chopper + free wheeling Diode Par number MID14-123 Backside: isolaed 1 3 4 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low sauraion
More informationNDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 996 NS356P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationTeccor brand Thyristors 65 / 70 Amp Standard SCRs
Sxx65x & Sxx70x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
More informationNDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's
More informationAO V Complementary Enhancement Mode Field Effect Transistor
AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used
More information3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack
ZB3-6ioX hyrisor Module M = 6 I = D FSM = 7 I 3~ ecifier Brake hopper ES = 2 I = 2 2 E(sa) =,8 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni + N Par number ZB3-6ioX Backside: isolaed / 3 2
More informationNDH834P P-Channel Enhancement Mode Field Effect Transistor
May 997 NH834P P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationConverter - Brake - Inverter Module (CBI3)
MUBW 35-12 8 Converer - Brake - Inverer Module (CBI3) 21 22 D11 D13 D15 1 2 3 7 D7 1 15 T1 D1 T3 D3 T5 D5 18 2 17 5 19 4 D12 D14 D1 23 14 24 T7 11 1 T2 D2 T4 D4 T D 12 13 See ouline drawing for pin arrangemen
More informationTop View. Top View S2 G2 S1 G1
AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low
More informationThyristors. Sxx10xSx & Sxx10x Series. 10 Amp Sensitive & Standard SCRs. Description
Sxx10xSx & Sxx10x Series RoHS Description This Sxx10x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive
More informationTop View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.
V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion
More informationNDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor
January 997 NS3AN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 N-Channel logic level enhancemen mode power field effec ransisors are produced using
More informationTeccor brand Thyristors 0.8 Amp Sensitive SCRs
EC103xx & SxSx Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps
More informationIXFK120N65X2 IXFX120N65X2
X2-Class HiPerFET TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic iode Preliminary Technical Informaion IXFK2N65X2 IXFX2N65X2 V SS = 6 I 25 = 2A R S(on) 24m TO-264 (IXFK) Symbol Tes
More informationIXTA96P085T IXTP96P085T IXTH96P085T
TrenchP TM Power MOSFETs P-Channel Enhancemen Mode Avalanche Raed IXTA96P85T IXTP96P85T V DSS = - 85V I D25 = - 96A R DS(on) 13mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Tes Condiions Maximum Raings V DSS
More informationNDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
April 996 NP45L / NB45L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level N-Channel enhancemen mode power field effec ransisors are produced using
More informationSOTiny Gate STX. Input. Descriptio n. Features. Block Diagram. Pin Configuration. Recommended Operating Conditions (1) Pin Description.
PI74STXG08 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 - Feaures
More informationIXGH48N60C3D1. GenX3 TM 600V IGBT with Diode V CES = 600V I C110. = 48A V CE(sat) 2.5V t fi(typ) = 38ns. High speed PT IGBT for kHz Switching
GenX3 TM 6V IGBT wih Diode High speed PT IGBT for 4-1kHz Swiching IXGH48N6C3D1 V CES = 6V 11 = 48A V CE(sa) 2.V fi(yp) = 38ns TO-247 Symbol Tes Condiions Maximum Raings V CES = C o C 6 V V CGR = C o C,
More informationPower MOSFET Stage for Boost Converters
UM 33-5N Power MOSFET Sage for Boos Converers Module for Power Facor Correcion 5 = 7 DSS = 5 R DS(on) =. Ω RRM (Diode) DSS Type 5 3 7 3 5 UM 33-5N 5 7 Symbol Condiions Maximum Raings DSS T J = 5 C o 5
More informationCoolMOS 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode
IXKF 4N6SCD1 CoolMOS 1) Power MOSFET wih Series Schoky Diode and Ulra Fas niparallel Diode in High olage ISOPLUS i4-pc S = 6 2 = 41 yp. = 6 mω rr = 7 ISOPLUS i4-pc Preliminary daa 1 D S T D F 1 2 E72873
More information1000PT Series. Phase Control Thyristors (Hockey PUK Version), 1000A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.
0PT Series Phase Control Thyristors (Hockey PUK ersion), 0 FETURES Center amplifying gate Metal case with ceramic insulator lnternational standard case TO-0C (B-PUK) Nell s C-type Capsule Compliant to
More informationSensitive SCRs. ( Amps) Features. Electrically Isolated Packages. Glass Passivation
Selected Packages* U.L. RECOGNIZED File #E71639 TO - 92 THERMOTAB TO-2AB TO-2AB A K G Sensitive SCRs (.8 1 ) 5 General Description The Teccor Electronics, Inc. line of sensitive SCR semiconductors are
More informationConverter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D1 1 2 3 7 D7 16 1 T1 D1 T3 D3 T D 18 2 6 17 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 1 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
More informationConverter - Brake - Inverter Module (CBI2)
MUBW 5-6 7 Converer - Brake - Inverer Module (CBI2) 2 22 D D3 D5 2 3 7 D7 6 5 T D T3 D3 T5 D5 8 2 6 7 5 9 4 D2 D4 D6 T7 T2 D2 T4 D4 T6 D6 23 4 24 2 3 NTC 8 9 Three Phase Brake Chopper Three Phase Recifier
More informationSymbol Parameter Value Unit RMS on-state current (full sine wave) Qxx35P5 T C. f = 120 Hz T J. 10 μs I GT
Description 30 mp / 35 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls, lighting controls,
More informationV DS. 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The AO4449 uses advanced rench echnology o provide excellen R(ON), and ulralow low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationSymbol Parameter Test Conditions Value Unit Sxx15L T C. = 90 C 15 RMS on-state current Sxx16R = 90 C 9.5 I T(AV) Sxx16R
Sxx15x & Sxx16x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SRs are triggered with few milliamperes
More informationHV513 8-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs, POL, Hi-Z, and Short Circuit Detect
H513 8-Channel Serial o Parallel Converer wih High olage Push-Pull s, POL, Hi-Z, and Shor Circui Deec Feaures HCMOS echnology Operaing oupu volage of 250 Low power level shifing from 5 o 250 Shif regiser
More informationTrenchMV TM Power MOSFET
Preliminary Technical Informaion TrenchMV TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed V DSS = V I D25 = A R DS(on) 7. mω TO-263 (IXTA) Symbol Tes Condiions Maximum Raings V DSS = 25 C o 175
More informationSOTiny TM LVDS High-Speed Differential Line Receiver. Features. Description. Applications. Pinout. Logic Diagram. Function Table
67890678906789067890678906789067890678906789067890678906789067890 SOTiny TM LVDS High-Speed Differenial Line Receiver Feaures Mees or Exceeds he Requiremens of NSI TI/EI-6-99 Sandard Signaling raes up
More informationp h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2
GWM 18-4X2 Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 4 V 25 = 18 R DSon yp. = 1.9 mw Preliminary daa G1 G3 G5 L+ S1 G2 S3 G4 S5 G6 L1 L2 L3 Sraigh leads Surface
More informationConverter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D15 1 2 3 7 D7 16 15 T1 D1 T3 D3 T5 D5 18 6 17 5 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
More informationV DS I D (at V GS =-10V) R DS(ON) (at V GS = -4.5V) 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The combines advanced rench MOFET echnology wih a low resisance package o provide exremely low R (ON). This device is ideal for load swich and baery proecion applicaions.
More informationPI74STX1G126. SOTiny Gate STX Buffer with 3-State Output. Features. Descriptio n. Block Diagram. Pin Configuration
PI74STXG6 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 SOTiny
More informationSamples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 90 C 55 A I T(AV) Average on-state current T C
Sxx55x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
More informationSymmetrical Gate Turn-Off Thyristor Types S0300SR12Y
Date: 21 Feb, 2014 Data Sheet Issue:- 2 Symmetrical Gate Turn-Off Thyristor Types bsolute Maximum Ratings MXIMUM VOLTGE RTINGS LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1) 1200 V V DSM
More informationonlinecomponents.com OPTOLOGIC OPTICAL INTERRUPTER SWITCH QVE00112 PACKAGE DIMENSIONS FEATURES 6/10/04
PACKAGE DIMENSIONS.714 (18.15).123 (3.125).189 (4.82).14 (.356).327 (8.31) Ø 3.3.1 (2.54).173 (4.4) OPTICAL C L 13.78 (35) ±.275 (7).316 (8.25) GRN WHT.464 (11.8).143 (3.625).118 (3.) GRY.173 (4.4).246.276
More informationPhase Control Thyristor Type SKT552/16E
Date:- 4 Feb 22 Data Sheet Issue:- 3 Absolute Maximum Ratings Phase Control Thyristor Type VOLTAGE RATINGS Symbol Parameter MAXIMUM UNITS V DRM Repetitive peak off-state voltage, (note 1) 16 V V DSM Non-repetitive
More informationZ0103/07/09 series. Blocking voltage to 800 V (NA and NN types)
Rev. September Product dt. Product profile. Description Pssivted trics in conventionl nd surfce mounting pckges. Intended for use in pplictions requiring high bidirectionl trnsient nd blocking voltge cpbility.
More informationPart Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel
Small Signal Fas Swiching Diode Feaures These diodes are also available in oher case syles including he DO- case wih he ype designaion N8, he MiniMELF case wih he ype designaion LL8, and he SOT- case wih
More informationT C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1
CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3
More informationp h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration
MM 5-75X Dual Power MOSFET Module S = 75 5 = 5 =. mω Phaseleg Configuraion Gae Conrol Pi 9 Power Screw Terminals 9 MOSFET T + T Symbol Condiio Maximum Raings S = 5 C o 5 C 75 ± 5 T C = 5 C j 5 T C = C
More informationO10 W10. Features / Advantages: Applications: Package: V2-Pack. 3~ Rectifier with brake unit for drive inverters
ZB-ioX hyrisor Module M = = 8 D SM = 7 3~ ecifier Brake hopper ES = = 8 5 E(sa) =.7 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni Par number ZB-ioX Backside: isolaed O S E M L7 G7 7 O eaures
More informationDouble Thyristor Module For Phase Control MT A2
Electrically isolated base plate Industrial standard package Simplified mechanical design, rapid assembly Pressure contact PROTON-ELECTROTEX RUSSIA Double Thyristor Module For Phase Control MT3-595-18-A2
More informationTeccor brand Thyristors 1.5 Amp Sensitive SCRs
Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by
More informationC N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q
QID3322 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 2 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E 1 2 3 6 M H 4 V
More informationTeccor brand Thyristors 0.8 Amp Sensitive SCRs
Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps of current as furnished by
More informationStandard Rectifier Module
UB2-6NOX Sandard ecifier Module M = 6 I = 8 D 3~ ecifier I SM = Brake hopper ES = 2 I = 8 25 E(sa) =.7 3~ ecifier Bridge + Brake Uni Par number UB2-6NOX M/O S Backside: isolaed ~6 ~E6 ~K6 U/ W M/O W U
More informationPM15RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 15 Amperes/1200 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM15RSH12 Three Phase + Brake IGBT Inverter Output 15 Amperes/12 olts F S FO B R X T Y (15 TYP.) - DIA. (4 TYP.) X CC Outline
More informationPM10RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 10 Amperes/1200 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSH12 Three Phase + Brake IGBT Inverter Output 1 Amperes/12 olts F S FO B R X T Y (15 TYP.) - DIA. (4 TYP.) X CC NC Q
More informationC N V (4TYP) U (5TYP)
QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1
More informationDETAIL "A" #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL "A"
MG6Q2YS6A Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-1 (72) 925-7272 Compact IGBT Series Module 6 Amperes/ olts A D H J K DETAIL "A" C2E1 E2 C1 B E F W M F Outline Drawing and Circuit
More informationPM100RSA060 Intellimod Module Three Phase + Brake IGBT Inverter Output 100 Amperes/600 Volts
N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSA6 Three Phase + Brake IGBT Inverter Output 1 Amperes/6 Volts AD R AB A B AB Q Y (4 TYP.) S G H N Outline Drawing
More information(6 A to 40 A) Features
Selected Packages* File #E71639 U.L. RECONIZED *TO-22 *TO-218X *TO-218 TO-263 D 2 Pak TO-252 D-Pak TO-251 V-Pak (6 A to 4 A) E4 eneral Description Teccor offers bidirectional alternistors with current
More informationT610T-8FP. 6 A logic level Triac. Description. Features. Applications
6 A logic level Triac Description Datasheet production data Available in through-hole fullpack package, the Triac can be used for the on/off or phase angle control function in general purpose AC switching.
More informationIXRH 40N120. IGBT with Reverse Blocking capability V CES I C25. = ±1200 V = 55 A V CE(sat) = 2.3 V typ IXYS All rights reserved TO-247 AD
IXRH N wih Reverse Blocking capabiliy S 5 = ± V = 55 (sa) =. V yp. TO-7 D E (TB) E = ae, = ollecor, E = Emier, TB = ollecor Symbol ondiio Maximum Raings S T VJ = 5 o 5 ± V S ± V 5 T = 5 55 9 T = 9 5 M
More informationST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK)
ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationSamples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 40 C 1.5 A I T(AV) Average on-state current T C
TCR22-x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current
More informationPM150RSA060 Intellimod Module Three Phase + Brake IGBT Inverter Output 150 Amperes/600 Volts
N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Three Phase + Brake IGBT Inverter Output AD R AB A B AB Q Y (4 TYP.) S G H N M M AG AE AG Outline Drawing and Circuit Diagram
More informationMC14099B. 8 Bit Addressable Latches
MC0B Bi ddressable Laches The MC0B is an bi addressable lach. Daa is enered in serial form when he appropriae lach is addressed (via address pi 0,, ) and wrie disable is in he low sae. For he MC0B he inpu
More informationPT8A A-F/67A/68A NTC Heating Controller with Multi LEDs
PTA-A-F/A/A Feaures / seps hea emperaure seings wih EDs or EDs indicaor Auo emperaure conrol wih TC TC open proecion Pulse rigger for high curren / TRIAC (up o ma) Auo power off afer exac Hour heaing(i
More informationSilicon Diffused Power Transistor
PHE39 GENERAL DESCRIPTION The PHE39 is a silicon npn power swiching ransisor in he TO22AB envelope inended for use in high frequency elecronic lighing ballas applicaions, converers, inverers, swiching
More informationObsolete Product(s) - Obsolete Product(s) A
STT812D/D/G TURBOSWTCH ULTR-FST HGH VOLTGE DODE MN PRODUCT CHRCTERSTCS F(V) V RRM rr (yp) FETURES ND BENEFTS ULTR-FST, SOFT RECOVERY. VERY LOW OVERLL POWER LOSSES N BOTH THE DODE ND THE COMPNON TRNSSTOR.
More informationSTTB3006P(I) TURBOSWITCH B. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 30A IF(AV) V RRM 600V. trr (typ) 60ns. VF (max) 1.
STTB3006P() TURBOSWTCH B. ULTR-FST HGH OLTGE DODE MN PRODUCTS CHRCTERSTCS F() RRM 30 600 rr (yp) 60ns F (max) 1.3 K PRELMNRY DT FETURES ND BENEFTS SPECFC TO THE FOLLOWNG OPER- TONS: Snubbing or clamping,
More informationEV Series 1.5 Amp Sensitive SCRs. Description. Features. Surge capability > 15Amps Blocking voltage (V DRM / V RRM.
Sx02xS Series RoHS Description New mp sensitive gate SR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SR s junctions are glasspassivated to
More informationMTC-500, MTK-500, MTA-500 Dual SCR Power Module
KKMTx5, December29 version MTC-5, MTK-5, MTA-5 s are designed for use in power electronic circuits and equipment under normal operating conditions. KEY PARAMETERS U DRM, U RRM I T(AV) I TSM du/dt* di/dt
More information6/7 1/2 4/5. Features / Advantages: Applications: Package: V1-A-Pack
MIX15R1 XPT Module 1 ES I E(sa) 1.7 Boos hopper Par number MIX15R1 Backside: isolaed /7 1/ 1 /5 Feaures / dvanages: pplicaions: Package: 1--Pack Easy paralleling due o he posiive emperaure coefficien of
More informationST2600C..R SERIES 2630A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25199 rev. B 02/00 (R-PUK)
ST2600C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 2630A Typical Applications DC motor controls Controlled DC
More informationPM50RSD120 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/1200 Volts
N N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM5RSD12 Three Phase + Brake IGBT Inverter Output 5 Amperes/12 Volts AD M M B P AB R A B 1 2 3 4 5 6 78 9 11 13 15 17
More informationHigh Voltage Standard Rectifier Module
UB35-22NO High olage Sandard ecifier Module M = 22 I = 5 D 3~ ecifier I SM = Brake hopper ES = 7 I = 3 25 E(sa) =.9 3~ ecifier Bridge + Brake Uni + NT Par number UB35-22NO Backside: isolaed 24+25 29 3
More informationN channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection
Feaures Logic Level Inpu Inpu Proecion (ESD) Thermal shudown Green produc (RoHS complian) Overload proecion Shor circui proecion Overvolage proecion Curren limiaion nalog driving possible Produc Summary
More informationMC74HC138A. 1 of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demuliplexer High Performance Silicon Gae CMOS The is idenical in pinou o he LS8. The device inpus are compaible wih sandard CMOS oupus; wih pullup resisors, hey are compaible wih LSTTL oupus.
More informationN channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection
HITFET BTS N Feaures Logic Level Inpu Inpu Proecion (ESD) Thermal shudown Green produc (RoHS complian) Overload proecion Shor circui proecion Overvolage proecion Curren limiaion nalog driving possible
More informationSilicon Controlled Rectifiers UNIT-1
Silicon Conrolled Recifiers UNIT-1 Silicon Conrolled Recifier A Silicon Conrolled Recifier (or Semiconducor Conrolled Recifier) is a four layer solid sae device ha conrols curren flow The name silicon
More informationStandard Rectifier Module
UB7-NOXT Sandard ecifier Module 3~ ecifier Bridge + Brake Uni + NT M = I = 7 D SM = I 3~ ecifier Brake hopper ES = I = 8 E(sa) =.8 Par number UB7-NOXT Backside: isolaed NT ~ 7~ 9~ eaures / dvanages: pplicaions:
More informationMBRS140T3G SBRS8140T3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS
MBRSTG, SBRS8TG Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
More informationSmart Highside Power Switch PROFET
Smar ighside Power Swich PROFET BTS 410E2 Feaures TO220AB/ Overload proecion Curren limiaion Shor circui proecion Thermal shudown 1 1 Overvolage proecion (including Sandard Sraigh leads SMD load dump)
More informationST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK)
ST1230C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk 1745A Typical
More informationCM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) 9-72 www.pwrx.com J L M A E F G M L AA AB C Z AG AH AJ A DETAIL "A" X AD H T U 53 V V P(52-53) R S T (-2) (5-6) (9-) ConvDi 52 5 5 49 48
More informationL - TYP. J TYP. S NUTS (5 TYP.) VWP1 VUPC UFO VVPC VFO VUP1 VVP1. Dimensions Inches Millimeters Q R
PM1CVA12 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Three Phase IGBT Inverter Output 1 Amperes/12 Volts TERMINAL CODE 1. WFO 2. VWPC 3. WP 4. VWP1 5. VFO 6. VVPC 7.
More informationType Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2
SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary
More informationThyristors 6 Amp Sensitive & Standard SCRs. Sxx06xSx & Sxx06x Series
Sxx06xSx & Sxx06x Series RoHS Description This Sxx06x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive
More informationQuad 2-Input OR Gate High-Performance Silicon-Gate CMOS
TECNICAL DATA Quad 2-Inpu OR ae igh-performance Silicon-ae CMOS The is idenical in pinou o he LS/ALS32. The device inpus are compaible wih sandard CMOS oupus; wih pullup resisors, hey are compaible wih
More informationV (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min.
QID42 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module Amperes/4 Volts S NUTS (TYP) F A D F J (2TYP) N 7 8 H B E 2 6 M H 4 V (4TYP) G (TYP)
More informationTeccor brand Thyristors 0.8 Amp Sensitive SCRs
Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by
More information