Smart Highside Power Switch PROFET

Transcription

1 Smar ighside Power Swich PROFET BTS 410E2 Feaures TO220AB/ Overload proecion Curren limiaion Shor circui proecion Thermal shudown 1 1 Overvolage proecion (including Sandard Sraigh leads SMD load dump) Fas demagneizaion of inducive Pin loads Reverse baery proecion 1) G S b O Undervolage and overvolage shudown wih auoresar and hyseresis Open drain diagnosic oupu Open load deecion in ONsae CMOS compaible inpu oss of ground and loss of proecion Elecrosaic discharge (ESD) proecion Applicaion µc compaible power swich wih diagnosic feedback for 12 and 24 DC grounded loads All ypes of resisive, inducive and capacive loads Replaces elecromechanical relays and discree circuis General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, monolihically inegraed in Smar SPMOS echnology. Fully proeced by embedded proecion funcions. Produc Summary Typ Package Ordering Code BTS 410 E2 Sandard TO220AB/ Q67060S6102A2 BTS 410 E2 E3043 TO220AB/, Opion E3043 Q67060S6102A3 BTS410E2 E3062A SMD TO220AB/, Op. E3062 Q67060S6102A4 (T&R) (AZ) (on) (SO) (SCr) RON A 1.8 A 220 mω 1) Wih exernal curren limi (e.g. resisor R =10 Ω) in connecion, resisors in series wih and connecions, reverse load curren limied by conneced load. Semiconducor Group

2 Maximum Raings a Tj = 2 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page 4) 6 oad dump proecion 2) oaddump = UA + s, UA = 13. R 3) = 2 Ω, R= 6.6 Ω, d= 400 ms, = low or high oad dump 4) 100 oad curren (Shor circui curren, see page ) selflimied A Operaing emperaure range Tj C Sorage emperaure range Tsg Power dissipaion (DC), TC 2 C Po 0 W nducive load swichoff energy dissipaion, single pulse Tj=10 C EAS bd J Elecrosaic discharge capabiliy (ESD) (uman Body Model) ESD 1 k npu volage (DC) Curren hrough inpu pin (DC) Curren hrough saus pin (DC) see inernal circui diagrams page 7 ±.0 ±.0 ma Thermal resisance chip case juncion ambien (free air) SMD version, device on PCB ) RhJC RhJA 2. 7 bd K/W 2) Supply volages higher han (AZ) require an exernal curren limi for he and saus pins, e.g. wih a 10 Ω resisor in he connecion and a 1 kω resisor in series wih he saus pin. A resisor for he proecion of he inpu is inegraed. 3) R = inernal resisance of he load dump es pulse generaor 4) oad dump is seup wihou he DUT conneced o he generaor per SO and D ) Device on 0mm*0mm*1.mm epoxy PCB FR4 wih 6cm 2 (one layer, 70µm hick) copper area for connecion. PCB is verical wihou blown air. Semiconducor Group 2

3 Block Diagram olage source Overvolage proecion Curren limi Gae proecion + 3 ogic 2 ESD olage sensor ogic Charge pump evel shifer Recifier imi for unclamped ind. loads Open load deecion Temperaure sensor oad 4 1 Signal Shor circui deecion PROFET oad Elecrical Characerisics Parameer and Condiions Symbol alues Uni a Tj = 2 C, = 12 unless oherwise specified min yp max oad Swiching Capabiliies and Characerisics Onsae resisance (pin 3 o ) = 1.6 A Tj=2 C Tj=10 C Nominal load curren (pin 3 o ) SO Proposal: ON = 0., TC = 8 C Oupu curren (pin ) while disconneced or pulled up, =30, = 0, see diagram page 8, Tj = C Turnon ime o 90% Turnoff ime o 10% R = 12 Ω, Tj = C Slew rae on 10 o 30%, R = 12 Ω, Tj = C Slew rae off 70 o 40%, R = 12 Ω, Tj = C R ON mω (SO) A (high) 10 ma on 12 off 12 8 µs d /d on 3 /µs d/d off 6 /µs Semiconducor Group 3

4 Parameer and Condiions Symbol alues Uni a Tj = 2 C, = 12 unless oherwise specified min yp ma x Operaing Parameers Operaing volage 6) Tj = C (on) Undervolage shudown Tj =2 C (under) Tj = C Undervolage resar Tj = C (u rs) 4.9 Undervolage resar of charge pump (ucp) see diagram page 12 Undervolage hyseresis (under) = (u rs) (under) (under) 0.1 Overvolage shudown Tj = C (over) 42 2 Overvolage resar Tj = C (o rs) 40 Overvolage hyseresis Tj = C (over) 0.1 Overvolage proecion 7) Tj = C (AZ) 6 70 =4 ma Sandby curren (pin 3) =0 eakage oupu curren (included in (off) ) =0 Operaing curren (Pin 1) 8), =, Tj = C Proecion Funcions T j = C T j = 10 C niial peak shor circui curren limi (pin 3 o ) 9), ( max 40 µs if ON > ON(SC) ) Tj =40 C Tj =2 C Tj =+10 C Repeiive overload shudown curren limi (off) µa (off) 20 µa ma (SCp) (SCr) ON = 8, T j = T j (see iming diagrams, page 10) A Shor circui shudown delay afer inpu pos. slope ON > ON(SC), T j = C d(sc) 40 µs min value valid only, if inpu "low" ime exceeds 60 µs A 6) A supply volage increase up o =.6 yp wihou charge pump, 2 7) Meassured wihou load. See also ON(C) in able of proecion funcions and circui diagram page 7. 8) Add, if > 0, add, if >. 9) Shor circui curren limi for max. duraion of d(sc) max =40 µs, prior o shudown Semiconducor Group 4

5 Parameer and Condiions Symbol alues Uni a Tj = 2 C, = 12 unless oherwise specified min yp max Oupu clamp (inducive load swich off) a = ON(C) = 40 ma, T j = C ON(C) = 1 A, T j = C 7 Shor circui shudown deecion volage (pin 3 o ) ON(SC) 8. Thermal overload rip emperaure T j 10 C Thermal hyseresis T j 10 K nducive load swichoff energy dissipaion 10), T j Sar = 10 C, single pulse = 12 = 24 E AS E oad12 E oad24 bd bd bd Reverse baery (pin 3 o 1) 11) 32 J Diagnosic Characerisics Open load deecion curren (oncondiion) T j = C (O) 2 10 ma npu and Saus Feedback 12) npu urnon hreshold volage T j = C (T+) npu urnoff hreshold volage T j = C (T) 1.0 npu hreshold hyseresis (T) 0. Off sae inpu curren (pin 2), = 0.4 (off) 1 30 µa On sae inpu curren (pin 2), = (on) µa Saus invalid afer posiive inpu slope (shor circui) Tj= C Saus invalid afer posiive inpu slope (open load) Tj= C Saus oupu (open drain) Zlimi volage Tj = C, = +0 ua low volage Tj = C, = +1.6 ma d( SC) 40 µs d() 30 0 (high).0 (low) 1400 µs ) While demagneizing load inducance, dissipaed energy in PROFET is E AS = ON(C) * i () d, approx. ON(C) E AS = 1 / 2 * * 2 * ( ), see diagram page 8 ON(C) 11) Requires 10 Ω resisor in connecion. Reverse load curren (hrough inrinsic drainsource diode) is normally limied by he conneced load. npu and Saus currens have o be limied (see max. raings and circui page 7). 12) f a ground resisor R is used, add he volage drop across his resisor. Semiconducor Group

6 Truh Table npu Oupu Saus Normal operaion Open load Shor circui o Shor circui o Overemperaure Undervolage Overvolage = "ow" evel = "igh" evel level level 412 B2 13) 410 D2 ( 14) ) 1) 1) 1) 1) 410 E2/F2 ( 14) ) 410 G2 ( 14) ) ) Power Transisor off, high impedance, versions BTS 410, BTS 412B: inernal pull up curren source for open load deecion. 14) ow resisance shor o oupu may be deeced by noloaddeecion 1) No curren sink capabiliy during undervolage shudown Semiconducor Group 6

7 Terms Shor circui deecion Faul Condiion: ON > 8. yp.; high PROFET 1 R ON ogic uni Shor circui deecion + ON npu circui (ESD proecion) nducive and overvolage oupu clamp + R Z ON PROFET ZD1 6 yp., ESD Zdiodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he Zvolage (increase of up o 1 ). ON clamped o 68 yp. Saus oupu Overvol. and reverse ba. proecion + + R (ON) R Z2 ESD ZD1 ZD2 ESD ZD ESDZdiode: 6 yp., max ma; R (ON) < 20 Ω a 1.6 ma, ESD Zdiodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he Zvolage (increase of up o 1 ). R Z1 ogic R PROFET Signal Z1 = 6.2 yp., Z2 = 70 yp., R = 10 Ω, R, R= 1 kω Semiconducor Group 7

8 Openload deecion ONsae diagnosic condiion: ON < R ON * (O) ; high disconnec wih charged inducive load + high 2 3 ON ON 4 PROFET ogic uni Open load deecion 1 Normal load curren can be handled by he PROFET iself. disconnec disconnec wih charged exernal inducive load PROFET high 2 4 S 3 PROFET 1 D 1 Any kind of load. n case of npu=high is (T+). Due o >0, no = low signal available. disconnec wih pull up PROFET 1 f oher exernal inducive loads are conneced o he PROFET, addiional elemens like D are necessary. nducive oad swichoff energy dissipaion = E PROFET E AS E oad E E R Any kind of load. f > (T+) device says off Due o >0, no = low signal available. Energy dissipaed in PROFET E AS = E + E E R. E oad < E, E = 1 /2 * * 2 Semiconducor Group 8

9 Opions Overview all versions: ighside swich, npu proecion, ESD proecion, load dump and reverse baery proecion wih 10 Ω in connecion, proecion agains loss of ground Type BTS 412 B2 410D2 410E2 410F2 410G ogic version B D E F G Overemperaure proecion wih hyseresis Tj >10 C, lach funcion 16)17) Tj >10 C, wih auoresar on cooling Shor circui o proecion swiches off when ON >3. yp. and > 7 yp 16) (when firs urned on afer approx. 10 µs) swiches off when ON >8. yp. 16) (when firs urned on afer approx. 10 µs) Achieved hrough overemperaure proecion Open load deecion in OFFsae wih sensing curren 30 µa yp. in ONsae wih sensing volage drop across power ransisor Undervolage shudown wih auo resar Overvolage shudown wih auo resar 18) Saus feedback for overemperaure shor circui o shor o open load undervolage overvolage Saus oupu ype CMOS Open drain 19) 19) 19) 19) Oupu negaive volage ransien limi (fas inducive load swich off) o ON(C) oad curren limi high level (can handle loads wih high inrush currens) low level (beer proecion of applicaion) Proecion agains loss of 16) ach excep when < ON(SC) afer shudown. n mos cases = 0 afer shudown ( 0 only if forced exernally). So he device remains lached unless < ON(SC) No lach beween urn on and d(sc). 17) Wih lach funcion. Reseed by a) npu low, b) Undervolage 18) No auo resar afer overvolage in case of shor circui 19) ow resisance shor o oupu may be deeced by noloaddeecion Semiconducor Group 9 (see page ).

10 Timing diagrams Figure 1a: urn on: Figure 2b: Swiching an inducive load d( ) d() *) A open drain A in case of oo early =high he device may no urn on (curve A) d( ) approx. 10 µs Figure 2a: Swiching a lamp, (O) *) if he ime consan of load is oo large, openloadsaus may occur Figure 3a: Turn on ino shor circui, d(sc) d(sc) approx. 200µs if > 8. yp. Semiconducor Group 10

11 Figure 3b: Turn on ino overload, Figure 4a: Overemperaure: Rese if T j <T j (SCp) (SCr) T J eaing up may require several seconds, < 8. yp. Figure 3c: Shor circui while on: Figure a: Open load: deecion in ONsae, urn on/off o open load d() **) open **) curren peak approx. 20 µs Semiconducor Group 11

12 Figure b: Open load: deecion in ONsae, open load occurs in onsae Figure 6b: Undervolage resar of charge pump on ON(C) off d( O1) d( O2) off (over) (u rs) (o rs) normal open normal (under) (u cp) on charge pump sars a (ucp) =.6 yp. d( O1) = bd µs yp., d( O2) = bd µs yp Figure 6a: Undervolage: Figure 7a: Overvolage: (under) (u cp) (u rs) ON(C) (over) (o rs) open drain Semiconducor Group 12

13 Figure 9a: Overvolage a shor circui shudown: (o rs) Oupu shor o shor circui shudown Overvolage due o power line inducance. No overvolage auoresar of PROFET afer shor circui shudown. Semiconducor Group 13

14 Package and Ordering Code All dimensions in mm Sandard TO220AB/ BTS 410 E2 Ordering code Q67060S6102A2 SMD TO220AB/, Op. E3062 Ordering code BTS410E2 E3062A T&R: Q67060S6102A4 TO220AB/, Opion E3043 Ordering code BTS 410 E2 E3043 Q67060S6102A3 Semiconducor Group 14