X (11 PLACES) TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 10 GUN (13) 11 GVN 12 GWN 13 TH1 14 TH2 (14)

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1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (724) PACK High Power MOSFET Module G Q G H K L A D F M L N X (11 PLACES) P R AD AB AC J P N Z AB AE Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C D E F G H J K L M N P Q /12 Rev. 1 B E T P (7) GUP (1) SUP (1) GUN (4) SUN N AF U S Q C U V 7 12 (8) GVP (2) SVP (11) GVN (5) SVN V A TC MEASURED 6 POINT U Z V W AA Z AA Z K M M X (9) GWP (3) SWP (12) GWN (6) SWN W B W (13) (14) Y TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 1 GUN 11 GVN 12 GWN 13 TH1 14 TH2 Dimensions Inches Millimeters R S T U V W X Dia..25 Dia. 6.5 Y Rad..25 Rad. 6.5 Z AA AB AC AD AE AF C A B V U Housing Type Tyco Electronics P/N A: B: Description: Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low R ds(on) and a fast recovery body diode to yield low loss. All components and interconnects are isolated from the heat sink baseplate. This offers simplified system assembly and thermal management. Features: Low E SW(off) and Low R ds(on) Super-Fast Recovery Free- Wheel Diode Thermistor for T C Sensing Parallel Legs to make a Dual Module at 3X the Rating Positive Locking Connectors Easy Bus Bar Layout Due to Flow Through Power Design Applications: Forklift Off road Electric Vehicle Welder UPS Chopper Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. is a 15V (V DSS ), 3 Ampere 6-Pack High Power MOSFET Module. Type Current Rating V DSS Amperes Volts FM

2 Absolute Maximum Ratings, unless otherwise specified Ratings Symbol Units Channel Temperature T j 4 to 15 C Storage Temperature T stg 4 to 125 C Drain-Source Voltage (G-S Short) V DSS 15 Volts Gate-Source Voltage (D-E Short) V GSS ±2 Volts Drain Current (T C = 25 C) I D(rms) 3 A rms Peak Drain Current (Pulse) I DM 6* Amperes Avalanche Current (L = 1µH, Pulse) I DA 3* Amperes Source Current (T C = 25 C)** I S(rms) 3 A rms Peak Source Current (Pulse)** I SM 6* Amperes Maximum Power Dissipation (T C = 25 C, T j < 15 C)*** P D 96 Watts Maximum Peak Power Dissipation (T C' = 25 C, T j < 15 C)*** P D 13 Watts Mounting Torque, M6 Main Terminal 4 in-lb Mounting Torque, M6 Mounting 4 in-lb Weight 6 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V ISO 25 Volts * Pulse width and repetition rate should be such that device channel temperature (T j ) does not exceed T j(max) rating. **Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi). ***T C' measured point is just under the chips. If you use this value, R th(f-a) should be measured just under the chips. 2 7/12 Rev. 1

3 Electrical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Drain-Cutoff Current I DSS V DS = V DSS, V GS = V 1. ma Gate-Source Threshold Voltage V GS(th) I D = 3mA, V DS = 1V Volts Gate Leakage Current I GSS V GS = V GSS, V DS = V 1.5 µa Static Drain-Source On-State Resistance r DS(on) I D = 3A, V GS = 15V, mω (Chip) I D = 3A, V GS = 15V, T j = 125 C 3. mω Static Drain-Source On-State Voltage V DS(on) I D = 3A, V GS = 15V, Volts (Chip) I D = 3A, V GS = 15V, T j = 125 C.91 Volts Lead Resistance R lead I D = 3A, Terminal-Chip,.7 mω I D = 3A, Terminal-Chip, T j = 125 C 1. mω Input Capacitance C iss 11 nf Output Capacitance C oss V DS = 1V, V GS = V 15 nf Reverse Transfer Capacitance C rss 1 nf Total Gate Charge Q G V DD = 48V, I D = 3A, V GS = 15V 195 nc Turn-on Delay Time t d(on) 4 ns Rise Time t r V DD = 48V, I D = 3A, 4 ns Turn-off Delay Time t d(off) V GS1 = V GS2 = 15V, R G = 4.2Ω, 5 ns Fall Time t f Inductive Load Switching Operation, 2 ns Diode Reverse Recovery Time** t rr I S = 3A 2 ns Diode Reverse Recovery Charge** Q rr 8. µc Source-Drain Voltage V SD I S = 3A, V GS = V 1.3 Volts **Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi). 7/12 Rev. 1 3

4 Thermal and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Channel to Case R th(j-c) MOSFET part (1/6 Module).13 C/W T C Reference Point per Outline Drawing Thermal Resistance, Channel to Case R th(j-c') MOSFET part (1/6 Module).96 C/W Measured Point is Just Under the Chips. Contact Thermal Resistance R th(c-f) Per 1/6 Module, Thermal Grease Applied.1 C/W Thermistors Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Resistance* R th T C = 25 C 1 kω B Constant* B Resistance at 25 C, 5 C 4 K *B = (InR 1 InR 2 ) / (1/T 1 1/T 2 ) R 1 : Resistance at T 1 (K), R 2 : Resistance at T 2 (K) 4 7/12 Rev. 1

5 DRAIN CURRENT, I D, (AMPERES) OUTPUT CHARACTERISTICS V GS = 2V DRAIN-SOURCE VOLTAGE, V DS, (VOLTS) 9 DRAIN CURRENT, I D, (AMPERES) TRANSFER CHARACTERISTICS V DS = 1V T j = 125 o C GATE-SOURCE, V GS, (VOLTS) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS CHARACTERISTICS (TYPICAL ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL - INVERTER PART) DRAIN-SOURCE ON-STATE VOLTAGE, V DS(ON), (VOLTS) I D = 15A I D = 6A I D = 3A GATE-SOURCE VOLTAGE, V GS, (VOLTS) SOURCE CURRENT, I S, (AMPERES) V GS = V T j = 125 o C SOURCE-DRAIN VOLTAGE, V SD, VOLTS) 7/12 Rev. 1 5

6 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE 1 3 REVERSE RECOVERY CHARACTERISTICS CAPACITANCE, C ies, C oes, C rss, (nf) C iss C oss C rss V GS = V DRAIN-SOURCE VOLTAGE, V DS, (VOLTS) REVERSE RECOVERY CURRENT, t rr, I rr, (ns) t rr I rr R G = 4.2Ω SOURCE CURRENT, I S, (AMPERES) SWITCHING LOSS, E SW(on), E SW(off), E rr, (mj/pulse) SWITCHING LOSS VS. DRAIN CURRENT E SW(off) E SW(on) E rr R G = 4.2Ω T j = 125 C 1 3 DRAIN CURRENT, I D, (AMPERES) SWITCHING LOSS, E SW(on), E SW(off), E rr, (mj/pulse) SWITCHING LOSS VS. GATE RESISTANCE I D = 3A T j = 125 C E SW(off) E SW(on) GATE RESISTANCE, R G, (Ω) E rr 6 7/12 Rev. 1

7 1 4 SWITCHING TIME VS. GATE RESISTANCE (TYPICAL ) 1 3 SWITCHING TIME VS. DRAIN CURRENT (TYPICAL ) t d(off) SWITCHING TIME, (ns) 1 3 t d(on) t d(off) GATE RESISTANCE, R G, (Ω) t r t f I D = 3A T j = 125 C SWITCHING TIMES, (ns) t d(on) t r t f R G = 4.2Ω T j = 125 C 1 3 DRAIN CURRENT, I D, (AMPERES) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL ) GATE-SOURCE VOLTAGE, V GS, (VOLTS) I D = 3A V DD = 6V GATE CHARGE, Q G, (nc) GATE-THRESHOLD VOLTAGE, V GS(th), (VOLTS) V GS = 1V I D = 3mA CHANNEL TEMPERATURE, T j, ( C) 7/12 Rev. 1 7

8 DRAIN-SOURCE ON-STATE RESISTANCE, r DS(ON), (mω) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL ) I D = 3A V GS = 12V V GS = 15V CHANNEL TEMPERATURE, T j, ( C) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Single Pulse T C = 25 C TIME, (s) /12 Rev. 1