Y (4 TYP.) V VPC 16. U N V WPI 15. NC F O 10. UP UFO V FO V VPI GND GND GND GND V CC OUT OUT S I
|
|
- Alaina Fitzgerald
- 6 years ago
- Views:
Transcription
1 N MITSBISHI TELLIGENT POER MODLES SLATED PACKAGE AD R AB A B AB Q Y (4 TYP.) S G H FO N NC M M AG AE NC AG V V NC N B P V NI OT AA - THD (6 TYP.) K J J D AD (15 TYP.) Z - DIA. (4 TYP.) V N AF V P 2.54 MM DIA. (2 TYP.).5 MM SQ. P (19 TYP.) OT TEMP Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33±.4 11.±1. B 3.74±.2 95.±.5 C 3.5±.4 89.±1. D E 2.91±.2 74.±.5 F G H J K L / /-. M N P Q R N N OT V PC X L P F X FO V PI OT E V VPC V C VP V FO V VPI OT 1. V PC 2. FO 3. P 4. V PI 5. V VPC 6. VFO 7. VP 8. V VPI 9. V PC 1. FO V PC P FO OT V PI P 11. P 12. V PI 13. V NC 14. V NI 15. NC 16. N 17. VN 18. N 19. FO AC Dimensions Inches Millimeters S T V X Y.24 Rad. Rad. 6. Z.22 Dia. Dia. 5.5 AA Metric M5 M5 AB AC AD.8 2. AE AF AG.2±.1.5±.3 T Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 2kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic Short Circuit Over Current Over Temperature nder Voltage Applications: Inverters PS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. is a 12V, 75 Ampere Intelligent Power Module. Type Current Rating V CES Amperes Volts (x 1) PM 75 12
2 MITSBISHI TELLIGENT POER MODLES SLATED PACKAGE Absolute Maximum Ratings, T j = 25 C unless otherwise specified Symbol Ratings nits Power Device Junction Temperature T j -2 to 15 C Storage Temperature T stg -4 to 125 C Case Operating Temperature T C -2 to 1 C Mounting Torque, M5 Mounting Screws 1.47 ~ 1.96 N m Mounting Torque, M5 Main Terminal Screws 1.47 ~ 1.96 N m Module eight (Typical) 55 Grams Supply Voltage Protected by OC and SC (V D = V, Inverter Part) (prot.) 8 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 Vrms Control Sector Supply Voltage (Applied between V P1 -V PC, V VP1 -V VPC, V P1 -V PC, V N1 -V NC ) V D 2 Volts Input Voltage (Applied between P -V PC, V P -V VPC, P -V PC, N V N N -V NC ) V C 2 Volts Fault Output Supply Voltage (Applied between FO -V PC, V FO -V VPC, FO -V PC, -V NC ) V FO 2 Volts Fault Output Current (Sink Current of FO, V FO, FO and Terminal) I FO 2 ma IGBT Inverter Sector Collector-Emitter Voltage (, V C = 15V) V CES 12 Volts Collector Current, (T C = 25 C) I C 75 Amperes Peak Collector Current, (T C = 25 C) I CP 15 Amperes Supply Voltage (Applied between P - N) 9 Volts Supply Voltage, Surge (Applied between P - N) (surge) 1 Volts Collector Dissipation P C 5 atts
3 MITSBISHI TELLIGENT POER MODLES SLATED PACKAGE Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. nits Control Sector Over Current Trip Level Inverter Part OC -2 C T 125 C, Amperes Short Circuit Trip Level Inverter Part SC -2 C T 125 C, 25 Amperes Over Current Delay Time t off(oc) 1 µs Over Temperature Protection OT Trip Level C OT r Reset Level 1 C Supply Circuit nder Voltage Protection V Trip Level Volts V r Reset Level 12.5 Volts Supply Voltage V D Applied between V P1 -V PC, Volts V VP1 -V VPC, V P1 -V PC, V N1 -V NC Circuit Current I D, V C = 15V, V N1 -V NC 4 55 ma, V C = 15V, V XP1 -V XPC ma Input ON Threshold Voltage V th(on) Applied between Volts Input OFF Threshold Voltage V th(off) P -V PC, V P -V VPC, P -V PC, Volts N V N N -V NC PM Input Frequency f PM 3-φ Sinusoidal 15 2 khz Fault Output Current I FO(H), V FO = 15V.1 ma I FO(L), V FO = 15V 5 ma Minimum Fault Output Pulse idth t FO ms
4 MITSBISHI TELLIGENT POER MODLES SLATED PACKAGE Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. nits IGBT Inverter Sector Collector Cutoff Current I CES V CE = V CES, T j = 25 C 1. ma V CE = V CES, T j = 125 C 1 ma Diode Forward Voltage V EC -I C = 75A,, V C = V Volts Collector-Emitter Saturation Voltage V CE(sat), V C = 15V, I C = 75A Volts, V C = 15V, I C = 75A, Volts T j = 125 C Inductive Load Switching Times t on µs Thermal Characteristics t rr, V C = 15V.15.3 µs t C(on) = 6V, I C = 75A.4 1. µs t off T j = 125 C µs t C(off) µs Characteristic Symbol Condition Min. Typ. Max. nits Junction to Case Thermal Resistance R th(j-c)q Each IGBT.25 C/att R th(j-c)f Each FDi.51 C/att Contact Thermal Resistance R th(c-f) Case to Fin Per Module,.27 C/att Recommended Conditions for se Thermal Grease Applied Characteristic Symbol Condition Value nits Supply Voltage Applied across P-N Terminals ~ 8 Volts V D Applied between V P1 -V PC, 15 ± 1.5 Volts V N1 -V NC, V VP1 -V VPC, V P1 -V PC Input ON Voltage V C(on) Applied between ~.8 Volts Input OFF Voltage V C(off) P -V PC, V P -V VPC, P -V PC, 4. ~ V D Volts N V N N -V NC PM nput Frequency f PM sing Application Circuit 5 ~ 2 khz Minimum Dead Time t dead Input Signal 3. µs
5 MITSBISHI TELLIGENT POER MODLES SLATED PACKAGE SATRATION VOLTAGE V CE(sat), (VOLTS) SATRATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CRRENT, I C, (AMPERES) COLLECTOR-EMITTER SATRATION VOLTAGE V CE(sat), (VOLTS) COLLECTOR-EMITTER SATRATION VOLTAGE CHARACTERISTICS (TYPICAL) I C = 75A V C = V SPPLY VOLTAGE, V D, (VOLTS) COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) COLLECTOR CRRENT, I C, (AMPERES) V C = V OTPT CHARACTERISTICS (TYPICAL) V D = 17V SITCHG TIMES, t on, t off, (µs) SITCHG TIME VS. COLLECTOR CRRENT (TYPICAL) = 6V Inductive Load 1 2 COLLECTOR CRRENT, I C, (AMPERES) t off t on DIODE FORARD CHARACTERISITCS SITCHG TIMES, t c(on), t c(off), (µs) SITCHG TIME VS. COLLECTOR CRRENT (TYPICAL) = 6V Inductive Load t c(off) t c(on) 1 2 COLLECTOR CRRENT, I C, (AMPERES) OVER CRRENT TRIP LEVEL VS. SPPLY VOLTAGE (TYPICAL) REVERSE RECOVERY TIME, t rr, (µs) REVERSE RECOVERY CRRENT VS. COLLECTOR CRRENT (TYPICAL) = 6V Inductive Load COLLECTOR REVERSE CRRENT, -I C, (AMPERES) I rr t rr OVER CRRENT TRIP LEVEL VS. TEMPERATRE (TYPICAL) 1 2 REVERSE RECOVERY CRRENT, I rr, (AMPERES) COLLECTOR REVERSE CRRENT, -I C, (AMPERES) V C = 15V EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) OVER CRRENT TRIP LEVEL % (NORMALIZED) SPPLY VOLTAGE, V D, (VOLTS) OVER CRRENT TRIP LEVEL % (NORMALIZED) JNCTION TEMPERATRE, T j, ( o C)
6 MITSBISHI TELLIGENT POER MODLES SLATED PACKAGE FALT OTPT PLSE IDTH VS. TEMPERATRE (TYPICAL) CONTROL SPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATRE DEPENDENCY (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) FALT OTPT PLSE IDTH % (NORMALIZED) JNCTION TEMPERATRE, T j, ( o C) V TRIP-RESET LEVEL, V t, V r, (VOLTS) V t V r JNCTION TEMPERATRE, T j, ( o C) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALE) SGLE PLSE STANDARD VALE = R th(j-c)q =.25 o C/ 1-2 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FDi) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALE) SGLE PLSE STANDARD VALE = R th(j-c)f =.51 o C/ 1-2 TIME, (s)
Y (4 TYP.) V VPC 16. U N V WPI 15. NC F O 10. UP UFO V FO V VPI GND GND GND GND V CC OUT OUT S I
N MITSBISHI TELLIGENT POER MODLES PM15CSA6 SLATED PACKAGE AD R AB A B AB Q Y (4 TYP.) S G H FO N NC M M AG AE NC AG V V NC N B P V NI OT 1234 5678 9 AA - THD (6 TYP.) K J J D 1 11 13 15 AD (15 TYP.) 12
More informationV VPC 16. UN V WPI F O 19. FO UP UFO V VPI V FO GND GND IN V CC OUT OUT S I
N MITSBISHI TELLIGENT POER MODLES PM5RSA6 AB Q Z A B Z R S M M AE B P 1234 5678 9 11 13 15 17 19 1 12 14 16 18 AB (15 TYP.) X - DIA. (4 TYP.) Y - THD (6 TYP.) V F E C 1. VPC 2. FO 3. P 4. VPI 5. VVPC 6.
More informationPM150RSA060 Intellimod Module Three Phase + Brake IGBT Inverter Output 150 Amperes/600 Volts
N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Three Phase + Brake IGBT Inverter Output AD R AB A B AB Q Y (4 TYP.) S G H N M M AG AE AG Outline Drawing and Circuit Diagram
More informationPM100RSA060 Intellimod Module Three Phase + Brake IGBT Inverter Output 100 Amperes/600 Volts
N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSA6 Three Phase + Brake IGBT Inverter Output 1 Amperes/6 Volts AD R AB A B AB Q Y (4 TYP.) S G H N Outline Drawing
More informationPM50RSD120 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/1200 Volts
N N Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM5RSD12 Three Phase + Brake IGBT Inverter Output 5 Amperes/12 Volts AD M M B P AB R A B 1 2 3 4 5 6 78 9 11 13 15 17
More informationU N V VPC G F V WPI W FO 12. UP U FO VP V FO V VPI GND GND IN GND GND IN V CC. Dimensions Inches Millimeters N
PM3RSF6 A D N R R R X (15 TYP.) H J V M 12 34 5678 9 11 2 2 21 22 23 24 25 E C B 13 15 17 19 14 16 18 P P P P P Y T - DIA. (2 TYP.) S 2. X.5 MM PIN (6 TYP.).8 X.4 MM PIN (19 TYP.) Q L W G F K 1. V UPC
More informationPM15RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 15 Amperes/1200 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM15RSH12 Three Phase + Brake IGBT Inverter Output 15 Amperes/12 olts F S FO B R X T Y (15 TYP.) - DIA. (4 TYP.) X CC Outline
More informationPM10RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 10 Amperes/1200 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSH12 Three Phase + Brake IGBT Inverter Output 1 Amperes/12 olts F S FO B R X T Y (15 TYP.) - DIA. (4 TYP.) X CC NC Q
More informationPM100RSD120 Intellimod Module Three Phase + Brake IGBT Inverter Output 100 Amperes/1200 Volts
P Powerex, Inc., 2 Hillis Street, oungwood, Pennsylvania 15697-18 (724) 925-7272 PM1RSD12 Three Phase + rake IGT Inverter Output 1 Amperes/12 olts AA - DIA. (4 TP.) H AC A R AC Z Q Q J T A - THD (6 TP.)
More informationMITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 FLAT-BASE TYPE INSULATED PACKAGE
PM75CVA12 TERMINAL CODE 1. WFO 2. VWPC 3. WP 4. VWP1 5. VFO 6. VVPC 7. VP 8. VVP1 9. UFO 1. VUPC 11. UP 12. VUP1 13. NC 14. FO 15. VNC 16. VN1 17. UN 18. VN 19. WN B K E P Q N A D P M 1234 5678 911112
More informationU (2 TYP.) T UFO VUP1 V CC GND GND OUT OUT OUT
PMRL1A12 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Three Phase IGBT Inverter + Brake Amperes/12 Volts W (6 PLACES) X (4 PLACES) AD AA W A B K K L Z V Z AG
More informationL - TYP. J TYP. S NUTS (5 TYP.) VWP1 VUPC UFO VVPC VFO VUP1 VVP1. Dimensions Inches Millimeters Q R
PM1CVA12 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Three Phase IGBT Inverter Output 1 Amperes/12 Volts TERMINAL CODE 1. WFO 2. VWPC 3. WP 4. VWP1 5. VFO 6. VVPC 7.
More informationPM25RSK120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts
N O CC O CC N FO CC N FO CC N FO CC S Powerex, nc., Hillis Street, Youngwood, Pennsylvania 5697-8 (74) 95-77 ntellimod Module Three Phase + Brake GBT nverter Output A E Z F G H AA L 4 6 5 7 8 9 6 4 5 7
More informationPM75B4LA060 PM75B4LB060 Photo Voltaic IPM H-Bridge 75 Amperes/600 Volts
M75B4LA060 M75B4LB060 hoto oltaic IM 75 Amperes/600 olts ackage A E F L H J J A D G M J TERMAL CODE 1 C 2 FO 3 4 1 5 C 6 FO 7 8 1 9 C 10 C AD W AE Q AG (2 LACES) 1 5 9 19 B W R T AF AB (6 LACES) AA C B
More informationPM150CBS060 Intellimod Module MAXISS Series Multi AXIS Servo IPM 150 Amperes/600 Volts
Powerex, Inc., 2 Hillis treet, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM15CB6 MAXI eries Multi AXI ervo IPM 15 Amperes/6 Volts H D F G A E G G AA Y TERMINAL CODE B J C V R fo F O K R U W 1 4 7
More informationPS12038 Intellimod Module Application Specific IPM 25 Amperes/1200 Volts
D M SQ PINS G L A F H K E J D VV QQ PP C 24 2 9 6 3 9 7 8 7 4 2 8 RR (4 PLACES) B N P Q R S Y EE XX V T LL DD GG TT SS X 2 3 4 GG T C FF LABEL T C 6 DD GG GG U P 2 N 3 NC 4 U V 6 W TERMINAL CODE 9 GND
More informationT C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1
CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3
More informationC N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q
QID3322 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 2 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E 1 2 3 6 M H 4 V
More informationL K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H
Three Phase Converter + Three Phase Inverter + Brake A ( PLACES) G J L L L P P1 N GU EU GV EV GW EW GU GVGW GB E Q C R D LABEL D U B R S T S V 3 MAIN TERMINAL X P P1 Outline Drawing and Circuit Diagram
More informationDETAIL "A" #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL "A"
MG6Q2YS6A Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-1 (72) 925-7272 Compact IGBT Series Module 6 Amperes/ olts A D H J K DETAIL "A" C2E1 E2 C1 B E F W M F Outline Drawing and Circuit
More informationC N V (4TYP) U (5TYP)
QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1
More informationCM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) 9-72 www.pwrx.com J L M A E F G M L AA AB C Z AG AH AJ A DETAIL "A" X AD H T U 53 V V P(52-53) R S T (-2) (5-6) (9-) ConvDi 52 5 5 49 48
More informationCM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts
CM2EXS-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBT NX-Series Module 2 Amperes/12 Volts A D K F G J E H J S T U 6 5 4 3 M 7 2 L N AL (4 PLACES)
More informationAK AJ AT AR DETAIL "A" N M L K B AB (6 PLACES) DETAIL "B" TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-S Series Module AH AN AC AD AE H AK AJ A D E F G AK AJ AP AT AR AQ AS C AX BB BC BD DETAIL
More informationCM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts
CM1DUC-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 Amperes/17 Volts A P D (8 PLACES) G U H H N S L K C2 C2E1 C1 W X J F BB G2 E2 E1 G1 Y C B Z E CC
More informationTechnical. Application. Assembly. Availability. Pricing. Phone
62 Baker Road, Suite 8 Minnetonka, MN 55345 www.chtechnology.com Phone (952) 933-69 Fax (952) 933-6223 -8-274-4284 ank you for downloading this document from C&H Technology, Inc. Please contact the C&H
More informationExcellent Integrated System Limited
Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Powerex Inc. CM2TU-12H
More informationTechnical. Application. Assembly. Availability. Pricing. Phone
611 Baker Road, Suite 1 Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-619 Fax (95) 933-63 1--7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology
More informationTechnical. Application. Assembly. Availability. Pricing. Phone
6 Baker Road, Suite Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-69 Fax (95) 933-63 --7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team
More informationPM75B4LA060. APPLICATION Photo voltaic power conditioner PM75B4LA060 MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE FEATURE
PMB4LA060 PMB4LA060 FEATURE a) Adopting new th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1. @Tj=1 C b) Over-temperature protection
More informationPM150CLA120 PM150CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM150CLA120
MITSUBISHI PM10CLA10 PM10CLA10 TYPE PM10CLA10 FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example,
More informationV (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min.
QID42 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module Amperes/4 Volts S NUTS (TYP) F A D F J (2TYP) N 7 8 H B E 2 6 M H 4 V (4TYP) G (TYP)
More informationPM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>
PMCLA PMCLA FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=1 C b) I adopt the over-temperature conservation
More informationX (11 PLACES) TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 10 GUN (13) 11 GVN 12 GWN 13 TH1 14 TH2 (14)
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module G Q G H K L A D F M L N X (11 PLACES) P R AD AB AC J P N Z AB AE Outline Drawing
More informationPM300CLA120 PM300CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM300CLA120
MITSUBISHI PM00CLA10 PM00CLA10 TYPE PM00CLA10 FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example,
More informationCM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9±0. G 80 6±0. CE E C G E
More informationPM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE
PMCS1D PMCS1D FEATURE verter + Drive & Protection IC phase A/ CSTBT TM (The Current senser and the thermal senser with a build-in CSTBT TM.) Monolithic gate drive & protection logic Detection, protection
More informationAPPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA
CMHG-3XA CMHG-3XA I C A V CES 65 V -element in pack High Insulated type CSTBT TM (III) / RFC Diode AlSiC baseplate APPLICATION Traction drives,
More informationPM50CLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLB060 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
PM0CLB060 PM0CLB060 FEATURE a) Adopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) I adopt the over-temperature conservation
More informationMITSUBISHI ELECTRIC CORPORATION Prepared by S.Iura A S.Iura B S.Iura
SECURITY CODE Spec. NME Customer s Std. Spec. MITSUBISHI ELECTRIC CORP. PRELIMINRY MITSUBISHI ELECTRIC CORPORTION Prepared by S.Iura S.Iura B S.Iura Checked by H.Yamaguchi R I.Umezaki I.Umezaki E pproved
More information< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
< HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE
More informationW - DIA. (4 TYP.) AE AG AH AJ R
M6HA-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Single IGBT A-Series Module 6 Amperes/12 Volts H G F D K J W - DIA. ( TYP.) AF A AG Y X Y Z G AA K B A
More informationCM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 9±0. -M6 NUTS G +1.0 0 0.
More informationPM50B6LA060 FLAT-BASE TYPE INSULATED PACKAGE
PM0B6L060 PM0B6L060 FETURE a) dopting new th generation IGBT (CSTBT TM ) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) Over-temperature protection
More information< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R
I C 75A V CES V -element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING &
More informationConverter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32
More informationKDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:
More informationSix-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED
MIX3W2TED Six-Pack XPT IGBT CES = 2 2 = 43 CE(sat) =.8 Part name (Marking on product) MIX3W2TED 2, 2, 9 7 NTC 2 23, 24 2, 22 9, 2 E 72873 8 3 7 Pin configuration see outlines. 4 27, 28 8 2 3, 4 Features:
More informationPM150RL1A120 FLAT-BASE TYPE INSULATED PACKAGE
PMRL1 PMRL1 FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM
More informationSTARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD6SGK12C2S 12V/6A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They
More informationD1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7
MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the
More informationConverter - Brake - Inverter Module (CBI 1) NPT IGBT
MUBW35-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 1600 CES = 600 CES = 600 I DM25 = 130 I C25 = 25 I C25 =
More informationConverter - Brake - Inverter Module (CBI 1) NPT IGBT
MUBW20-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper RRM = 1600 CES = 600 CES Three Phase Inverter = 600 I DM25 = 95 I C25 = 12 I C25 =
More informationSTARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT 1V/A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications
More informationSTARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationSTARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package
STARPOWER SEMICONDUCTOR IGBT GD2PIT12CS Molding Type Module 12V/2A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationSTARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationSTARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package
STARPOWER SEMICONDUCTOR IGBT GD1HFL17P2S Molding Type Module 17V/1A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More information10 23, 24 21, 22 19, , 14
MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWBTML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 1 2 = 17 2 = 28 I FSM = 3 CE(sat) = 1.8 CE(sat) = 1.8 Part name
More informationSix-Pack XPT IGBT MIXA80W1200TED V CES I C25. = 1200 V = 120 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA80W1200TED
MIXW12TED SixPack XPT IGBT CES 2 = 12 = 12 CE(sat) = 1. Part name (Marking on product) MIXW12TED 2, 2 1, 1 1 9 17 NTC 2 1 23, 24 21, 22 19, 2 E 7273 1 3 7 11 Pin configuration see outlines. 4 27, 2 12
More informationSTARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD600HFT120C2S_G8 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are
More informationConverter - Brake - Inverter Module XPT IGBT
MIX3WBTED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = Three Phase Inverter CES = I DM = 5 5 = 7 5 = 43 I FSM = 3 CE(sat) =. CE(sat) =. Part name (Marking
More informationSix-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH
MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines.
More informationSTARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD3PJT6L2S 6V/3A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationSTARPOWER IGBT GD800CUT170A3S/GD800CLT170A3S. General Description. Features. Typical Applications SEMICONDUCTOR TM. Molding Type Module
STARPOWER SEMICONDUCTOR TM IGBT GDCUT17A3S GDCLT17A3S Molding Type Module 17V/A Chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short
More informationБеларусь г.минск тел./факс 8(017) электронные компоненты радиодетали e:mail
Беларусь г.минск тел./факс 8(17)2-6-46 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by Беларусь г.минск тел./факс 8(17)2-6-46 www.fotorele.net e:mail minsk17@tut.by Fuji Discrete
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWBTMH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 2 = 28 2 = 28 I FSM = 27 CE(sat) = 1.8 CE(sat) = 1.8 Part name
More informationSix-Pack XPT IGBT MIXA20W1200MC. V CES = 1200 V I C25 = 28 A V CE(sat) = 2.1 V. Part name (Marking on product) MIXA20W1200MC
MIXWMC Six-Pack XPT IGBT S = = 8 (sat) =. Part name (Marking on product) MIXWMC O9 P9 L9 S8 W8 E I4 C G4 K4 E K C G H Features: Easy paralleling due to the positive temperature coefficient of the on-state
More informationSTARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD4PIY12C5S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationIGBT Module H Bridge MIXA81H1200EH. = 1200 V = 120 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIXA81H1200EH.
MIX1H1EH IGBT Module H Bridge CES 5 = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIX1H1EH 13, 1 1 9 1 19 15 E773 3 11 1 1, Features: pplication: Package: Easy paralleling due to the positive temperature
More informationSymbol Parameter Test condition Value Unit V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
FEATURES 1200V,100A,V CE(sat) (typ.)=1.75v@v GE =15V IGBT CHIP: Trench + Field Stop technology Fast switching and short tail current Low switching losses RoHS Compliant APPLICATIONS Electric welding machine
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK55N3 IXBX55N3 V CES = 3V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V
More information< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R
CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING
More informationIXGH48N60A3D C
GenX TM V IGBT w/diode Ultra Low Vsat PT IGBT for up to khz switching IXGH8NAD S = V = 8A (sat).v TO-7 AD Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5- T Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology NTC D D3 D5 7 D7 5 T T3 T5 D D3 D5 7 9 3 5 9 D D D T7 T T T D D D 3 3 Three Phase Rectifier Brake Chopper Three Phase Inverter
More information) unless otherwise specified Symbol Description Values Units
IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873
More informationConverter - Brake - Inverter Module XPT IGBT
MIXWB2TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = 2 Three Phase Inverter CES = 2 I DM = 25 25 = 25 = 2 I FSM = CE(sat) =. CE(sat) =. Part name (Marking
More informationMMIX4B22N300 V CES. = 3000V = 22A V CE(sat) 2.7V I C90
Advance Technical Information High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) C G EC3 Symbol Test Conditions Maximum Ratings G3 C2 G2 E2C V CES = 25 C
More informationn-channel Solar Inverter Induction Heating G C E Gate Collector Emitter
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)
More information1200 V 600 A IGBT Module
1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and
More informationParameter Symbol Conditions Values Unit. V CC = 900 V, V CEM 1200 V V GE 15 V, Tv j 125 ºC
IGBT/SiC Diode Co-pack Features Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent
More informationIXXH75N60C3D1 V CES = 600V I C110. XPT TM 600V IGBT GenX3 TM w/ Diode. = 75A V CE(sat) 2.3V t fi(typ) = 75ns
XPT TM 6V IGBT GenX TM w/ Diode Extreme Light Punch Through IGBT for -6 khz Switching IXXH7N6CD S = 6V = 7A (sat).v t fi(typ) = 7ns Symbol Test Conditions Maximum Ratings S = C to 7 C 6 V V CGR = C to
More informationPM150RLA060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLA060 MITSUBISHI <INTELLIGENT POWER MODULES>
FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)= @Tj= C b) I adopt the over-temperature conservation by Tj detection
More informationSTARPOWER IGBT GD800HTT65P4S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 650V/800A 6 in one-package
STARPOWER SEMICONDUCTOR IGBT GD8HTT65P4S Molding Type Module 65V/8A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6
More informationSix-Pack XPT IGBT MIXA30W1200TMH. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TMH
MIX3W12TMH Six-Pack XPT IGBT S = 12 25 = 43 (sat) = 1.8 Part name (Marking on product) MIX3W12TMH E 72873 Pin configuration see outlines. Features: High level of integration - only one power semiconductor
More informationMMIX4B12N300 V CES = 3000V. = 11A V CE(sat) 3.2V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor V CES = V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C,
More informationIRGP4263PbF IRGP4263-EPbF
IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding
More informationSTARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD2FST2L2S_G8 2V/2A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationIXGH60N60C3 = 600V I C110. GenX3 TM 600V IGBT V CES. = 60A V CE(sat) 2.5V t fi (typ) = 50ns. High Speed PT IGBT for kHz Switching TO-247 AD
GenX3 TM V IGBT High Speed PT IGBT for -khz Switching IXGHNC3 V CES = V 11 = A V CE(sat) V t fi (typ) = 5ns Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C, R GE = 1MΩ
More informationGSID040A120B1A3 IGBT Dual Boost Module
IGBT Dual Boost Module Features: High efficiency dual boost Ultrafast switching frequency Low Inductance Layout Lead Free, Compliant with RoHS Requirement Application: Solar inverter Bypass Diode Maximum
More information5SNA 2000K StakPak IGBT Module
Data Sheet, Doc. No. 5SYA 143-1-213 5SNA K4513 StakPak IGBT Module = 45 V = A Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High tolerance to uneven mounting pressure Explosion
More informationT1 T3 T5 D1 D3 D5 G1 G3 G5 U V W G2 G4 G6 EU EV EW
MIXW1TMH Six-Pack XPT IGBT S = 1 2 = 28 (sat) = 1.8 Part name (Marking on product) MIXW1TMH P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 E 72873 Pin configuration see outlines. EU
More informationIXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor S = V = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 1 C V V CGR T J = 25 C to 1 C, R GE = 1MΩ V
More informationIXYH40N120C3D1 V CES
V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYHNC3D S = V 9 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A
V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More informationSTARPOWER. Rectifier RD180PBS180C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR Rectifier 1800V/180A 6 in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications such as SMPS.
More information