STPS30SM100S. Power Schottky rectifier. Features. Description
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1 Power Schottky rectifier Features High current capability valanche rated Low forward voltage drop current High frequency operation Insulated package: Insulation voltage 2000 V rms Package capacitance = 12 pf Description This single Schottky rectifier is suited for high frequency switch mode power supply. Packaged in TO-220B, TO-220B narrow leads, TO-220FPB, D 2 P and I 2 P, this device is intended to be used in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load. Figure 1. V I V RRM V R V R Electrical characteristics (a) "Reverse" 2 x I O I F I O I I R VTo I R "Forward" V F(Io) X V F X V V F(2xIo) Table 1. (1) (3) TO-220B STPS30SM100ST TO-220FPB STPS30SM100SFP Device summary (2) I F(V) 30 V RRM 100 V T j (max) 150 C V F (typ) V I 2 P STPS30SM100SR D 2 P STPS30SM100SG-TR TO-220B narrow leads STPS30SM100STN a. V RM and I RM must respect the reverse safe operating area defined in Figure 13. V R and I R are pulse measurements (t p < 1 µs). V R, I R, V RRM and V F, are static characteristics September 2011 Doc ID Rev 4 1/
2 Characteristics STPS30SM100S 1 Characteristics Table 2. bsolute ratings (limiting values with terminals 1 and 3 short circuited) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 100 V I F(RMS) Forward current rms 60 I F(V) verage forward current δ = 0.5 I FSM (1) P RM V RM (2) V SM (2) Surge non repetitive forward current TO-220B, TO-220B narrow leads, D 2 P, I 2 P, T c = 125 C 30 TO-220FPB, T c = 80 C t p = 10 ms sinusoidal, terminals 1 and 3 short circuited To evaluate the conduction losses use the following equation: P = x I F(V) x I F 2 (RMS) 530 Repetitive peak avalanche power t p = 1 µs T j = 25 C W Maximum repetitive peak avalanche voltage Maximum single pulse peak avalanche voltage t p < 1 µs T j < 150 C I R < 53.8 t p < 1 µs T j < 150 C I R < V 120 V T stg Storage temperature range -65 to C T j Maximum operating junction temperature (3) 150 C 1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes N1768 and N Refer to Figure 13. dptot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink dtj Rth(j-a) Table 3. Thermal resistance Symbol Parameter Value Unit R th(j-c) Table 4. Junction to case TO-220B, TO-220B narrow leads, D 2 P, I 2 P 1 TO-220FPB 4 Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) V F (2) Reverse leakage current Forward voltage drop 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 380 µs, δ < 2% C/W T j = 25 C 45 µ V R = V RRM T j = 125 C m T j = 25 C 500 I F = 5 T j = 125 C 420 T j = 25 C I F = 10 T j = 125 C T j = 25 C I F = 30 T j = 125 C mv 2/11 Doc ID Rev 4
3 Characteristics Figure 2. verage forward power dissipation versus average forward current Figure 3. verage forward current versus ambient temperature (δ = 0.5) 30 P F (av)(w) 35 I F(av) () 25 δ=0.1 δ=0.2 δ=0.5 δ=1 30 R th(j-a)=r th(j-c) TO-220B, TO-220B narrow leads, I 2 P, D 2 P δ=0.05 I (av)() F δ=tp/t T tp TO-220FPB T R th(j-a)=15 C/W 5 δ=tp/t tp T amb( C) Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus junction temperature P RM(t p) P RM(1µs) P RM(Tj) P RM(25 C) t p(µs) T ( C) j Figure 6. Non repetitive surge peak forward current versus overload duration, maximum values Figure 7. Non repetitive surge peak forward current versus overload duration, maximum values (TO-220FPB) I M () TO-220B, TO-220B narrow leads, I 2 P, D 2 P T C=25 C T C=75 C T IM C=125 C t t(s) δ =0.5 1.E-03 1.E-02 1.E-01 1.E I M () TO-220FPB T C=25 C T C=75 C IM T C=125 C t δ t(s) =0.5 1.E-03 1.E-02 1.E-01 1.E+00 Doc ID Rev 4 3/11
4 Characteristics STPS30SM100S Figure 8. Relative variation of thermal impedance junction to case versus pulse duration Figure 9. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPB) Zth(j-c)/Rth(j-c) TO-220B, TO-220B narrow leads, I 2 P, D 2 P Zth(j-c)/Rth(j-c) 1.0 TO-220FPB Single pulse T tp(s) δ=tp/t tp E-03 1.E-02 1.E-01 1.E T 0.2 Single pulse 0.1 tp(s) δ=tp/t tp E-03 1.E-02 1.E-01 1.E+00 1.E+01 Figure 10. Reverse leakage current versus reverse voltage applied (typical values) Figure 11. Junction capacitance versus reverse voltage applied (typical values) 1.E+02 1.E+01 IR(m) T j=150 C T j=125 C C(pF) F=1MHz V OSC=30mV RMS T j=25 C 1.E+00 T j=100 C T j=75 C E-01 T j=50 C 1.E-02 T j=25 C 1.E-03 VR(V) VR(V) Figure 12. Forward voltage drop versus forward current (terminals 1 and 3 short circuited) Figure 13. Reverse safe operating area (t p < 1 µs and T j < 150 C) I FM () T j=125 C (Maximum values) T j=125 C (Typical values) T j=25 C (Maximum values) V FM(V) Iarm () Forbidden area Operating area Varm (V) /11 Doc ID Rev 4
5 Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPC packages, depending on their level of environmental compliance. ECOPC specifications, grade definitions and product status are available at: ECOPC is an ST trademark. Table 5. TO-220B dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max H2 Dia L5 C L7 C D E F L2 F2 L6 F F G F1 L9 D G F L4 H L typ typ. G1 G M E L L L L L M 2.6 typ typ. Diam Doc ID Rev 4 5/11
6 Package information STPS30SM100S Table 6. TO-220B narrow leads dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max E P F b b Q H1 c D L20 L1 L30 D D1 D E e b1(x3) L J1 e F H e e1 b (x3) C J L L L L P Q /11 Doc ID Rev 4
7 Package information Table 7. TO-220FPB dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max H B B D E Dia F L6 F L2 L7 F L3 G L4 F1 F2 L5 D G H L2 16 Typ Typ. G1 G F E L L L L L Dia Doc ID Rev 4 7/11
8 Package information STPS30SM100S Devices in I 2 P with nickel-plated back frame must NOT be mounted by frame soldering like SMDs. Such devices are intended to be through-hole mounted ONLY and in no circumstances shall ST be held liable for any lack of performance or damage arising out of soldering of nickel-plated back frames. Table 8. I 2 P dimensions Dimensions Ref. Millimeters Inches L2 E c2 Min. Max. Min. Max b D b c L1 1 c L b1 D e e e1 b c e E L L L /11 Doc ID Rev 4
9 Package information Table 9. D 2 P dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. L2 E C B L D B L3 B2 B 1 C R C C D G E G L M * V2 * FLT ZONE NO LESS THN 2mm L L M R 0.40 typ typ. V Figure 14. D 2 P footprint (dimensions in mm) Doc ID Rev 4 9/11
10 Ordering information STPS30SM100S 3 Ordering information Table 10. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS30SM100ST PS30SM100ST TO-220B 2.2 g 50 Tube STPS30SM100SFP PS30SM100SFP TO-220FPB 1.70 g 50 Tube STPS30SM100SR PS30SM100SR I 2 P 1.49 g 50 Tube STPS30SM100SG-TR PS30SM100SG D 2 P 1.48 g 1000 Tape and reel STPS30SM100STN PS30SM100STN TO-220B narrow leads 1.9 g 50 Tube 4 Revision history Table 11. Document revision history Date Revision Changes 25-Mar First issue 16-pr Updated package graphic for TO-220B on front page and in Table Jan dded warning paragraph above Table Sep dded TO-220B narrow leads package. 10/11 Doc ID Rev 4
11 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY TWO UTHORIZED ST REPRESENTTIVES, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIFIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RIS. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United ingdom - United States of merica Doc ID Rev 4 11/11
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