VARIUS: A Model of Process Variation and Resulting Timing Errors for Microarchitects
|
|
- Gary Stephens
- 5 years ago
- Views:
Transcription
1 VARIUS: A Model of Process Variation and Resulting Timing Errors for Microarchitects Smruti R. Sarangi, Brian Greskamp, Radu Teodorescu, Jun Nakano, Abhishekh Tiwarii and Josep Torrellas University of Illinois at Urbana-Champaign
2 Parameter Variation Parameter Variation P V T Process Supply Voltage Temperature Threshold Voltage: V t Effective Gate Length: L eff 2
3 Process Variation is a Problem Variation of V t and L eff: Chip leakage power Chip frequency 3
4 Chip Frequency Decreases of Logic Paths of Logic Paths Timing errors Number Delay T nom Number T nom Delay T var Distribution of path delays in pipe stage: No variation Distribution of path delays in pipe stage: With variation 4
5 Implications on Design Decisions Unlikely designs will be for worst-case par. values Chips too slow or too costly to design Performance of a generation lost Alternative: design closer to avg. par values Some parts of the chip will be too slow: can we live with timing errors? Some parts of the chip will dissipate too much power: can we push it to other parts of the chip? Multi-tiered solution required: circuits, CAD, microarchitecture, software this talk focuses on μarch. 5
6 Variation components die-to-die within die systematic random spatial correlation 6
7 Modeling Process Variation Process Variation (Not to Scale) Systematic Variation Random Variation Lens aberrations Mask deformities Thickness variation in CMP Photo-lithographic effects Variable dopant density Line edge roughness 7
8 Systematic Variation We divide the chip into a grid of points Each point has one random value of ΔPsys Multivariate normal distribution (μsys, σsys) Characterized by a correlation function: Px r Correlation is position independent and isotropic For ρ(r) we choose the spherical model Random: modeled analytically at transistor granularity Py 8
9 Spherical Model Stronger correlation Weaker correlation Px P Py r Px r Py Matches measured data [Friedberg et al. 05] 9
10 Modeling Systematic Variation Multivariate normal distribution with Spherical Spatial Correlation (μ, σ, Φ) Break into a million cells Example variation map 10
11 Paths in a Pipeline Stage Density df) robability D unction (pd Pr Fu t T nom Timing errors T var Path Delay Err ror Rate (P PE) f var f 1 Frequency f nom Cummulati ive Distrib. Fun nction (cdf f) 1 pdf(t) cdf (t) T nom T var Path Delay Error rate: P E (t) = 1 cdf(t) 1 cdf 1 T nom T var Path Delay 11
12 Error-rate rate vs Frequency Error Rate (PE E) Frequency f var f nom 12
13 Basic Kinds of Structures Logic Memory ALUs, comparators, sense-amps Path delays: heterogeneous SRAMs, CAMs Path delays: homogenous Mixed Renamer, wakeup/select x% memory and (100-x)% logic 13
14 Logic Sample Path 35% Wiring 65% Logic Elmore Delay Model T g Alpha Power Law LeffVDD μ ( T )( VDD Vth ) α 14
15 Logic Delay Distribution of path delays no variation D varlogic = (d wire + η* d gate )* D logic d wire + d gate = 1 wire gate +d gate *D extra Distribution of path delays with variation Relative gate delay due to systematic variation in P,V, T Delay due to random variation Obtain D logic using a timing analysis tool 15
16 Memory Delay WL T mem 1 I Icell Solve for I cell using long channel eqns. I cell = f(vt X,Vt Y,L X,L Y ) Vt X,Vt Y,L X and L Y are gaussian variables I cell X Y V DD BL BR μ vtx, μ vty, μ lx, μ ly are the systematic components σ vtx, σ vty, σ lx, σ ly are the random components 16
17 Memory Delay - II Find a distribution for T mem T mem is a function of four gaussian variables Model T mem as a normal distribution Find the μ and σ for T mem using multi-variable Taylor expansion This is the access time dist. for 1 bit A typical entry has bits Find the max distribution of normal variables Error probability = 1 cdf(t mem ) 17
18 Memory Delay Memory Cell Memory Line Delay dist. Use Kirchoff s equations Long channel trans. equations Multi-variable Taylor expansion max. distribution Delay line = max(delay cell ) 18
19 Combined Error Model We have the delay distributions For each structure per access, P(E) = 1 cdf(t) P(E) per inst = αp(e), α=accesses/inst. Combined error rate per instruction P(E) total = Σ αp(e) CPI penalty per instruction recovery_penalty * P(E) total 19
20 Validation Logic 20
21 Validation Memory 21
22 Finding out the Distributions Using a timing analysis tool ity y Densi pdf) bability nction (p Prob Fun Adding our variation model Path Delay T nom T var 22
23 Adding Up all Pipe Stages Whole processor a + b Er rror Rate (PE) Frequency Er rror Rate (PE) b a f var f nom Frequency P ( f ) = ( αi P ( f E i Ei )) 23
24 Overview Model for Process Variation Model for Timing Errors due to Process Variation Techniques to Tolerate Timing Errors 24
25 Variation Aware Timing Speculation (VATS) Multicore Chip Checker Processor Core Diva Checker L0 Cache Razor Latches L1 Cache 25
26 Performance vs Frequency Perf ( f ) = CPI f CPI comp + stall _ mem + CPI rec P (f) x recovery_penalty E Erro or Rate (P E ) Perf Per rforman nce (Per rf) f opt Frequency 26
27 AMD Athlon-like like Processor 27
28 Conclusion Micro-architects can help solve par variation Cores that assume faults occur all the time Frequency / Power / Error rate are tradeable Techniques to mitigate variation-induced errors Develop models that give insights Work with circuits, CAD, and software folks 28
A Model for Timing Errors in Processors with Parameter Variation
A Model for Timing Errors in Processors with Parameter Variation Smruti R. Sarangi, Brian Greskamp, and Josep Torrellas University of Illinois at Urbana-Champaign {sarangi,greskamp,torrellas}@cs.uiuc.edu
More informationVARIUS: A Model of Parameter Variation and Resulting Timing Errors for Microarchitects
VARIUS: A Model of Parameter Variation and Resulting Timing Errors for Microarchitects Radu Teodorescu, Brian Greskamp, Jun Nakano, Smruti R. Sarangi, Abhishek Tiwari and Josep Torrellas University of
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 21: April 4, 2017 Memory Overview, Memory Core Cells Penn ESE 570 Spring 2017 Khanna Today! Memory " Classification " ROM Memories " RAM Memory
More informationLecture 34: Portable Systems Technology Background Professor Randy H. Katz Computer Science 252 Fall 1995
Lecture 34: Portable Systems Technology Background Professor Randy H. Katz Computer Science 252 Fall 1995 RHK.F95 1 Technology Trends: Microprocessor Capacity 100000000 10000000 Pentium Transistors 1000000
More information! Charge Leakage/Charge Sharing. " Domino Logic Design Considerations. ! Logic Comparisons. ! Memory. " Classification. " ROM Memories.
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 9: March 9, 8 Memory Overview, Memory Core Cells Today! Charge Leakage/ " Domino Logic Design Considerations! Logic Comparisons! Memory " Classification
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 19: March 29, 2018 Memory Overview, Memory Core Cells Today! Charge Leakage/Charge Sharing " Domino Logic Design Considerations! Logic Comparisons!
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date - Apr 18, 011 Duration:.5 hrs ECE334 Digital Electronics Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationSemiconductor Memories
Semiconductor References: Adapted from: Digital Integrated Circuits: A Design Perspective, J. Rabaey UCB Principles of CMOS VLSI Design: A Systems Perspective, 2nd Ed., N. H. E. Weste and K. Eshraghian
More informationVariation-Resistant Dynamic Power Optimization for VLSI Circuits
Process-Variation Variation-Resistant Dynamic Power Optimization for VLSI Circuits Fei Hu Department of ECE Auburn University, AL 36849 Ph.D. Dissertation Committee: Dr. Vishwani D. Agrawal Dr. Foster
More informationDigital Integrated Circuits A Design Perspective. Semiconductor. Memories. Memories
Digital Integrated Circuits A Design Perspective Semiconductor Chapter Overview Memory Classification Memory Architectures The Memory Core Periphery Reliability Case Studies Semiconductor Memory Classification
More informationPreviously. ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. Variation Types. Fabrication
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Previously Understand how to model transistor behavior Given that we know its parameters V dd, V th, t OX, C OX, W, L, N A Day
More informationLast Lecture. Power Dissipation CMOS Scaling. EECS 141 S02 Lecture 8
EECS 141 S02 Lecture 8 Power Dissipation CMOS Scaling Last Lecture CMOS Inverter loading Switching Performance Evaluation Design optimization Inverter Sizing 1 Today CMOS Inverter power dissipation» Dynamic»
More informationChapter Overview. Memory Classification. Memory Architectures. The Memory Core. Periphery. Reliability. Memory
SRAM Design Chapter Overview Classification Architectures The Core Periphery Reliability Semiconductor Classification RWM NVRWM ROM Random Access Non-Random Access EPROM E 2 PROM Mask-Programmed Programmable
More informationModeling and Analyzing NBTI in the Presence of Process Variation
Modeling and Analyzing NBTI in the Presence of Process Variation Taniya Siddiqua, Sudhanva Gurumurthi, Mircea R. Stan Dept. of Computer Science, Dept. of Electrical and Computer Engg., University of Virginia
More informationHigh-Performance SRAM Design
High-Performance SRAM Design Rahul Rao IBM Systems and Technology Group Exercise RWL WWL READ Path RWL WBL WBLb RBL WWL READ Path WBL WBLb RBL Worst case read condition : Worst case Bitline Leakage when
More information! Memory. " RAM Memory. ! Cell size accounts for most of memory array size. ! 6T SRAM Cell. " Used in most commercial chips
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec : April 3, 8 Memory: Core Cells Today! Memory " RAM Memory " Architecture " Memory core " SRAM " DRAM " Periphery Penn ESE 57 Spring 8 - Khanna
More informationChapter 2 Process Variability. Overview. 2.1 Sources and Types of Variations
Chapter 2 Process Variability Overview Parameter variability has always been an issue in integrated circuits. However, comparing with the size of devices, it is relatively increasing with technology evolution,
More informationSEMICONDUCTOR MEMORIES
SEMICONDUCTOR MEMORIES Semiconductor Memory Classification RWM NVRWM ROM Random Access Non-Random Access EPROM E 2 PROM Mask-Programmed Programmable (PROM) SRAM FIFO FLASH DRAM LIFO Shift Register CAM
More informationWhere Does Power Go in CMOS?
Power Dissipation Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit Path between Supply Rails during Switching Leakage Leaking
More informationEE382 Processor Design Winter 1999 Chapter 2 Lectures Clocking and Pipelining
Slide 1 EE382 Processor Design Winter 1999 Chapter 2 Lectures Clocking and Pipelining Slide 2 Topics Clocking Clock Parameters Latch Types Requirements for reliable clocking Pipelining Optimal pipelining
More informationAdministrative Stuff
EE141- Spring 2004 Digital Integrated Circuits Lecture 30 PERSPECTIVES 1 Administrative Stuff Homework 10 posted just for practice. No need to turn in (hw 9 due today). Normal office hours next week. HKN
More informationSemiconductor memories
Semiconductor memories Semiconductor Memories Data in Write Memory cell Read Data out Some design issues : How many cells? Function? Power consuption? Access type? How fast are read/write operations? Semiconductor
More informationTopics. Dynamic CMOS Sequential Design Memory and Control. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut
Topics Dynamic CMOS Sequential Design Memory and Control Dynamic CMOS In static circuits at every point in time (except when switching) the output is connected to either GND or V DD via a low resistance
More informationSelf-Repairing and Self-Calibration: A Design/Test Strategy for Nano-scale CMOS
Self-Repairing and Self-Calibration: A Design/Test Strategy for Nano-scale CMOS Kaushik Roy S. Mukhopadhyay, H. Mahmoodi, A. Raychowdhury, Chris Kim, S. Ghosh, K. Kang School of Electrical and Computer
More informationLecture 15: Scaling & Economics
Lecture 15: Scaling & Economics Outline Scaling Transistors Interconnect Future Challenges Economics 2 Moore s Law Recall that Moore s Law has been driving CMOS [Moore65] Corollary: clock speeds have improved
More informationWARM SRAM: A Novel Scheme to Reduce Static Leakage Energy in SRAM Arrays
WARM SRAM: A Novel Scheme to Reduce Static Leakage Energy in SRAM Arrays Mahadevan Gomathisankaran Iowa State University gmdev@iastate.edu Akhilesh Tyagi Iowa State University tyagi@iastate.edu ➀ Introduction
More informationLecture 12: Energy and Power. James C. Hoe Department of ECE Carnegie Mellon University
18 447 Lecture 12: Energy and Power James C. Hoe Department of ECE Carnegie Mellon University 18 447 S18 L12 S1, James C. Hoe, CMU/ECE/CALCM, 2018 Housekeeping Your goal today a working understanding of
More informationImpact of Scaling on The Effectiveness of Dynamic Power Reduction Schemes
Impact of Scaling on The Effectiveness of Dynamic Power Reduction Schemes D. Duarte Intel Corporation david.e.duarte@intel.com N. Vijaykrishnan, M.J. Irwin, H-S Kim Department of CSE, Penn State University
More informationEnergy Delay Optimization
EE M216A.:. Fall 21 Lecture 8 Energy Delay Optimization Prof. Dejan Marković ee216a@gmail.com Some Common Questions Is sizing better than V DD for energy reduction? What are the optimal values of gate
More informationAnd device degradation. Slide 1
And device degradation Slide 1 Z. Guo, ISSSCC 2018 Inter-die Variation & Cell Failures Failures in SRAM Array Overall Cell Failure: [ ] P = P Fail = P A! R! W! H F F F F F P MEM Redundant Columns PASS
More informationSemiconductor Memories
!"#"$%&'()$*#+%$*,' -"+./"$0 1'!*0"#)'2*+03*.$"4* Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Semiconductor Memories December 20, 2002 !"#$%&'()*&'*+&, Memory Classification Memory Architectures
More informationMoore s Law Technology Scaling and CMOS
Design Challenges in Digital High Performance Circuits Outline Manoj achdev Dept. of Electrical and Computer Engineering University of Waterloo Waterloo, Ontario, Canada Power truggle ummary Moore s Law
More informationNanoscale CMOS Design Issues
Nanoscale CMOS Design Issues Jaydeep P. Kulkarni Assistant Professor, ECE Department The University of Texas at Austin jaydeep@austin.utexas.edu Fall, 2017, VLSI-1 Class Transistor I-V Review Agenda Non-ideal
More informationEE241 - Spring 2000 Advanced Digital Integrated Circuits. References
EE241 - Spring 2000 Advanced Digital Integrated Circuits Lecture 26 Memory References Rabaey, Digital Integrated Circuits Memory Design and Evolution, VLSI Circuits Short Course, 1998.» Gillingham, Evolution
More informationGMU, ECE 680 Physical VLSI Design 1
ECE680: Physical VLSI Design Chapter VIII Semiconductor Memory (chapter 12 in textbook) 1 Chapter Overview Memory Classification Memory Architectures The Memory Core Periphery Reliability Case Studies
More informationSemiconductor Memories. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Paolo Spirito
Semiconductor Memories Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Paolo Spirito Memory Classification Memory Classification Read-Write Memory Non-Volatile Read-Write Memory Read-Only Memory Random
More informationECE520 VLSI Design. Lecture 23: SRAM & DRAM Memories. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 23: SRAM & DRAM Memories Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture
More informationEEC 216 Lecture #3: Power Estimation, Interconnect, & Architecture. Rajeevan Amirtharajah University of California, Davis
EEC 216 Lecture #3: Power Estimation, Interconnect, & Architecture Rajeevan Amirtharajah University of California, Davis Outline Announcements Review: PDP, EDP, Intersignal Correlations, Glitching, Top
More informationScaling of MOS Circuits. 4. International Technology Roadmap for Semiconductors (ITRS) 6. Scaling factors for device parameters
1 Scaling of MOS Circuits CONTENTS 1. What is scaling?. Why scaling? 3. Figure(s) of Merit (FoM) for scaling 4. International Technology Roadmap for Semiconductors (ITRS) 5. Scaling models 6. Scaling factors
More informationBeiHang Short Course, Part 7: HW Acceleration: It s about Performance, Energy and Power
BeiHang Short Course, Part 7: HW Acceleration: It s about Performance, Energy and Power James C. Hoe Department of ECE Carnegie Mellon niversity Eric S. Chung, et al., Single chip Heterogeneous Computing:
More informationDesign for Manufacturability and Power Estimation. Physical issues verification (DSM)
Design for Manufacturability and Power Estimation Lecture 25 Alessandra Nardi Thanks to Prof. Jan Rabaey and Prof. K. Keutzer Physical issues verification (DSM) Interconnects Signal Integrity P/G integrity
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 19: Timing Analysis
EE115C Winter 2017 Digital Electronic Circuits Lecture 19: Timing Analysis Outline Timing parameters Clock nonidealities (skew and jitter) Impact of Clk skew on timing Impact of Clk jitter on timing Flip-flop-
More informationLow power Architectures. Lecture #1:Introduction
Low power Architectures Lecture #1:Introduction Dr. Avi Mendelson mendlson@ee.technion.ac.il Contributors: Ronny Ronen, Eli Savransky, Shekhar Borkar, Fred PollackP Technion, EE department Dr. Avi Mendelson,
More informationDigital Integrated Circuits A Design Perspective
Semiconductor Memories Adapted from Chapter 12 of Digital Integrated Circuits A Design Perspective Jan M. Rabaey et al. Copyright 2003 Prentice Hall/Pearson Outline Memory Classification Memory Architectures
More informationHw 6 and 7 Graded and available Project Phase 2 Graded Project Phase 3 Launch Today
EECS141 1 Hw 8 Posted Last one to be graded Due Friday April 30 Hw 6 and 7 Graded and available Project Phase 2 Graded Project Phase 3 Launch Today EECS141 2 1 6 5 4 3 2 1 0 1.5 2 2.5 3 3.5 4 Frequency
More informationPARADE: PARAmetric Delay Evaluation Under Process Variation *
PARADE: PARAmetric Delay Evaluation Under Process Variation * Xiang Lu, Zhuo Li, Wangqi Qiu, D. M. H. Walker, Weiping Shi Dept. of Electrical Engineering Dept. of Computer Science Texas A&M University
More informationTrade-off Analysis between Timing Error Rate and Power Dissipation for Adaptive Speed Control with Timing Error Prediction
Trade-off Analysis between Timing Error Rate and Power Dissipation for Adaptive Speed Control with Timing Error Prediction Hiroshi Fuketa, Masanori Hashimoto, Yukio Mitsuyama, and Takao Onoye Dept. Information
More informationFLCC Seminar. Spacer Lithography for Reduced Variability in MOSFET Performance
1 Seminar Spacer Lithography for Reduced Variability in MOSFET Performance Prof. Tsu-Jae King Liu Electrical Engineering & Computer Sciences Dept. University of California at Berkeley Graduate Student:
More informationPower in Digital CMOS Circuits. Fruits of Scaling SpecInt 2000
Power in Digital CMOS Circuits Mark Horowitz Computer Systems Laboratory Stanford University horowitz@stanford.edu Copyright 2004 by Mark Horowitz MAH 1 Fruits of Scaling SpecInt 2000 1000.00 100.00 10.00
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 23: April 13, 2017 Variation; I/O Circuits, Inductive Noise Lecture Outline! Design Quality " Variation! Packaging! Variation and Testing!
More informationLuis Manuel Santana Gallego 31 Investigation and simulation of the clock skew in modern integrated circuits
Luis Manuel Santana Gallego 31 Investigation and simulation of the clock skew in modern egrated circuits 3. Clock skew 3.1. Definitions For two sequentially adjacent registers, as shown in figure.1, C
More informationS No. Questions Bloom s Taxonomy Level UNIT-I
GROUP-A (SHORT ANSWER QUESTIONS) S No. Questions Bloom s UNIT-I 1 Define oxidation & Classify different types of oxidation Remember 1 2 Explain about Ion implantation Understand 1 3 Describe lithography
More informationAmdahl's Law. Execution time new = ((1 f) + f/s) Execution time. S. Then:
Amdahl's Law Useful for evaluating the impact of a change. (A general observation.) Insight: Improving a feature cannot improve performance beyond the use of the feature Suppose we introduce a particular
More informationTopic 4. The CMOS Inverter
Topic 4 The CMOS Inverter Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk Topic 4-1 Noise in Digital Integrated
More informationFloating Point Representation and Digital Logic. Lecture 11 CS301
Floating Point Representation and Digital Logic Lecture 11 CS301 Administrative Daily Review of today s lecture w Due tomorrow (10/4) at 8am Lab #3 due Friday (9/7) 1:29pm HW #5 assigned w Due Monday 10/8
More informationEE141-Fall 2011 Digital Integrated Circuits
EE4-Fall 20 Digital Integrated Circuits Lecture 5 Memory decoders Administrative Stuff Homework #6 due today Project posted Phase due next Friday Project done in pairs 2 Last Lecture Last lecture Logical
More informationName: Answers. Mean: 83, Standard Deviation: 12 Q1 Q2 Q3 Q4 Q5 Q6 Total. ESE370 Fall 2015
University of Pennsylvania Department of Electrical and System Engineering Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2015 Final Tuesday, December 15 Problem weightings
More informationFrom Physics to Logic
From Physics to Logic This course aims to introduce you to the layers of abstraction of modern computer systems. We won t spend much time below the level of bits, bytes, words, and functional units, but
More informationMTJ-Based Nonvolatile Logic-in-Memory Architecture and Its Application
2011 11th Non-Volatile Memory Technology Symposium @ Shanghai, China, Nov. 9, 20112 MTJ-Based Nonvolatile Logic-in-Memory Architecture and Its Application Takahiro Hanyu 1,3, S. Matsunaga 1, D. Suzuki
More informationIntroduction to CMOS VLSI Design (E158) Lecture 20: Low Power Design
Harris Introduction to CMOS VLSI Design (E158) Lecture 20: Low Power Design David Harris Harvey Mudd College David_Harris@hmc.edu Based on EE271 developed by Mark Horowitz, Stanford University MAH E158
More informationStatus. Embedded System Design and Synthesis. Power and temperature Definitions. Acoustic phonons. Optic phonons
Status http://robertdick.org/esds/ Office: EECS 2417-E Department of Electrical Engineering and Computer Science University of Michigan Specification, languages, and modeling Computational complexity,
More informationFig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B)
1 Introduction to Transistor-Level Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed
More informationPower Dissipation. Where Does Power Go in CMOS?
Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit
More informationICS 233 Computer Architecture & Assembly Language
ICS 233 Computer Architecture & Assembly Language Assignment 6 Solution 1. Identify all of the RAW data dependencies in the following code. Which dependencies are data hazards that will be resolved by
More informationLecture 2: CMOS technology. Energy-aware computing
Energy-Aware Computing Lecture 2: CMOS technology Basic components Transistors Two types: NMOS, PMOS Wires (interconnect) Transistors as switches Gate Drain Source NMOS: When G is @ logic 1 (actually over
More informationEE241 - Spring 2003 Advanced Digital Integrated Circuits
EE241 - Spring 2003 Advanced Digital Integrated Circuits Lecture 16 Energy-Recovery Circuits SOI Technology and Circuits Optimal EDP Contours 1 Leakage and Switching ELk 2 = ESw Opt L ln d K tech α avg
More informationClock signal in digital circuit is responsible for synchronizing the transfer to the data between processing elements.
1 2 Introduction Clock signal in digital circuit is responsible for synchronizing the transfer to the data between processing elements. Defines the precise instants when the circuit is allowed to change
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 8 Power Dissipation in CMOS Gates Power in CMOS gates Dynamic Power Capacitance switching Crowbar
More informationIntroduction to CMOS VLSI Design Lecture 1: Introduction
Introduction to CMOS VLSI Design Lecture 1: Introduction David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Introduction Integrated circuits: many transistors
More informationThe Linear-Feedback Shift Register
EECS 141 S02 Timing Project 2: A Random Number Generator R R R S 0 S 1 S 2 1 0 0 0 1 0 1 0 1 1 1 0 1 1 1 0 1 1 0 0 1 1 0 0 The Linear-Feedback Shift Register 1 Project Goal Design a 4-bit LFSR SPEED, SPEED,
More informationEECS 427 Lecture 11: Power and Energy Reading: EECS 427 F09 Lecture Reminders
EECS 47 Lecture 11: Power and Energy Reading: 5.55 [Adapted from Irwin and Narayanan] 1 Reminders CAD5 is due Wednesday 10/8 You can submit it by Thursday 10/9 at noon Lecture on 11/ will be taught by
More informationCMOS Digital Integrated Circuits Lec 13 Semiconductor Memories
Lec 13 Semiconductor Memories 1 Semiconductor Memory Types Semiconductor Memories Read/Write (R/W) Memory or Random Access Memory (RAM) Read-Only Memory (ROM) Dynamic RAM (DRAM) Static RAM (SRAM) 1. Mask
More informationXarxes de distribució del senyal de. interferència electromagnètica, consum, soroll de conmutació.
Xarxes de distribució del senyal de rellotge. Clock skew, jitter, interferència electromagnètica, consum, soroll de conmutació. (transparències generades a partir de la presentació de Jan M. Rabaey, Anantha
More informationObjectives for Energy Reduction
genda Introduction, challenges and objectives Wireless (ody) Sensor Networks pplications, system requirements Generic architecture of a WSN node Processor and radio transceiver performance Examples of
More informationMicro-architecture Pipelining Optimization with Throughput- Aware Floorplanning
Micro-architecture Pipelining Optimization with Throughput- Aware Floorplanning Yuchun Ma* Zhuoyuan Li* Jason Cong Xianlong Hong Glenn Reinman Sheqin Dong* Qiang Zhou *Department of Computer Science &
More informationImpact of parametric mismatch and fluctuations on performance and yield of deep-submicron CMOS technologies. Philips Research, The Netherlands
Impact of parametric mismatch and fluctuations on performance and yield of deep-submicron CMOS technologies Hans Tuinhout, The Netherlands motivation: from deep submicron digital ULSI parametric spread
More informationStatistical Analysis of BTI in the Presence of Processinduced Voltage and Temperature Variations
Statistical Analysis of BTI in the Presence of Processinduced Voltage and Temperature Variations Farshad Firouzi, Saman Kiamehr, Mehdi. B. Tahoori INSTITUTE OF COMPUTER ENGINEERING (ITEC) CHAIR FOR DEPENDABLE
More informationEE5780 Advanced VLSI CAD
EE5780 Advanced VLSI CAD Lecture 4 DC and Transient Responses, Circuit Delays Zhuo Feng 4.1 Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay
More informationA glance on the analytical model of power-performance performance trade-off in VLSI microprocessor design. Sapienza University of Rome
A glance on the analytical model of power-performance performance trade-off in VLSI microprocessor design Sapienza University of Rome Introductive ideas clock clock clock clock Reg. V dd = 3.3 V T CK =
More informationSpiral 2 7. Capacitance, Delay and Sizing. Mark Redekopp
2-7.1 Spiral 2 7 Capacitance, Delay and Sizing Mark Redekopp 2-7.2 Learning Outcomes I understand the sources of capacitance in CMOS circuits I understand how delay scales with resistance, capacitance
More informationLow Leakage L SRAM Design in Deep Submicron Technologies
Low Leakage L SRAM Design in Deep Submicron Technologies Behnam Amelifard, Farzan Fallah, and Massoud Pedram Univ. of Southern California Los Angeles CA USA Jan25 25, 28 Presentation at SNU Outline Introduction
More informationSemiconductor Memory Classification
Semiconductor Memory Classification Read-Write Memory Non-Volatile Read-Write Memory Read-Only Memory Random Access Non-Random Access EPROM E 2 PROM Mask-Programmed Programmable (PROM) SRAM FIFO FLASH
More informationSemiconductor Memories
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Semiconductor Memories December 20, 2002 Chapter Overview Memory Classification Memory Architectures
More informationGrasping The Deep Sub-Micron Challenge in POWERFUL Integrated Circuits
E = B; H = J + D D = ρ ; B = 0 D = ρ ; B = 0 Yehia Massoud ECE Department Rice University Grasping The Deep Sub-Micron Challenge in POWERFUL Integrated Circuits ECE Affiliates 10/8/2003 Background: Integrated
More informationEE 330 Lecture 37. Digital Circuits. Other Logic Families. Propagation Delay basic characterization Device Sizing (Inverter and multiple-input gates)
EE 330 Lecture 37 Digital Circuits Other Logic Families Static Power Dissipation Propagation Delay basic characterization Device Sizing (Inverter and multiple-input gates) Review from Last Time Inverter
More informationLecture 6 Power Zhuo Feng. Z. Feng MTU EE4800 CMOS Digital IC Design & Analysis 2010
EE4800 CMOS Digital IC Design & Analysis Lecture 6 Power Zhuo Feng 6.1 Outline Power and Energy Dynamic Power Static Power 6.2 Power and Energy Power is drawn from a voltage source attached to the V DD
More informationTiming Issues. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolić. January 2003
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolić Timing Issues January 2003 1 Synchronous Timing CLK In R Combinational 1 R Logic 2 C in C out Out 2
More informationProcess-Tolerant Low-Power Design for the Nano-meter Regime
Process-Tolerant Low-Power Design for the Nano-meter Regime Kaushik Roy Electrical & Computer Engineering Purdue University Exponential Increase in Leakage 1970 1980 2000 2010 2020 5 µm 1 µm 100 nm 10
More informationLecture 4: DC & Transient Response
Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response David Harris Harvey Mudd College Spring 004 Outline DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Slide
More informationSystem Level Leakage Reduction Considering the Interdependence of Temperature and Leakage
System Level Leakage Reduction Considering the Interdependence of Temperature and Leakage Lei He, Weiping Liao and Mircea R. Stan EE Department, University of California, Los Angeles 90095 ECE Department,
More informationThe Elusive Metric for Low-Power Architecture Research
The Elusive Metric for Low-Power Architecture Research Hsien-Hsin Hsin Sean Lee Joshua B. Fryman A. Utku Diril Yuvraj S. Dhillon Center for Experimental Research in Computer Systems Georgia Institute of
More informationAnswers. Name: Grade: Q1 Q2 Q3 Q4 Total mean: 83, stdev: 14. ESE370 Fall 2017
University of Pennsylvania Department of Electrical and System Engineering Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2017 Midterm 2 Monday, November 6 Point values
More informationDKDT: A Performance Aware Dual Dielectric Assignment for Tunneling Current Reduction
DKDT: A Performance Aware Dual Dielectric Assignment for Tunneling Current Reduction Saraju P. Mohanty Dept of Computer Science and Engineering University of North Texas smohanty@cs.unt.edu http://www.cs.unt.edu/~smohanty/
More informationSemiconductor Memories
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Semiconductor Memories December 20, 2002 Chapter Overview Memory Classification Memory Architectures
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 23: April 17, 2018 I/O Circuits, Inductive Noise, CLK Generation Lecture Outline! Packaging! Variation and Testing! I/O Circuits! Inductive
More informationFuture trends in radiation hard electronics
Future trends in radiation hard electronics F. Faccio CERN, Geneva, Switzerland Outline Radiation effects in CMOS technologies Deep submicron CMOS for radiation environments What is the future going to
More informationDigital Integrated Circuits 2nd Inverter
Digital Integrated Circuits The Inverter The CMOS Inverter V DD Analysis Inverter complex gate Cost V in V out complexity & Area Integrity and robustness C L Static behavior Performance Dynamic response
More informationAnnouncements. EE141- Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power
- Fall 2002 Lecture 7 MOS Capacitances Inverter Delay Power Announcements Wednesday 12-3pm lab cancelled Lab 4 this week Homework 2 due today at 5pm Homework 3 posted tonight Today s lecture MOS capacitances
More informationECE321 Electronics I
ECE321 Electronics I Lecture 1: Introduction to Digital Electronics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: 1 Textbook
More informationLecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline q Pass Transistors q DC Response q Logic Levels and Noise Margins q Transient Response q RC Delay Models q Delay Estimation 2 Activity 1) If the width of a transistor
More information