Lecture 6 Power Zhuo Feng. Z. Feng MTU EE4800 CMOS Digital IC Design & Analysis 2010


 Joshua Sherman
 4 years ago
 Views:
Transcription
1 EE4800 CMOS Digital IC Design & Analysis Lecture 6 Power Zhuo Feng 6.1
2 Outline Power and Energy Dynamic Power Static Power 6.2
3 Power and Energy Power is drawn from a voltage source attached to the V DD pin(s) of a chip. Instantaneous Power: Pt () = ItV () () t Energy: Average Power: E P avg T = Ptdt () 0 T = E 1 T = T 0 Ptdt () 6.3
4 Power in Circuit Elements () = ( ) P t I t V VDD DD DD () t 2 VR 2 PR() t = = IR() t R R dv E C = I ( t ) V ( t ) dt = C V ( t ) dt dt () 0 0 V C = C V t dv = CV C 6.4
5 Charging ga Capacitor When the gate output rises Energy stored in capacitor is E = CV 1 2 C 2 L DD But energy drawn from the supply is dv EVDD = I( t) VDDdt = CL VDDdt dt 0 0 VDD 2 CV L DD dv CV L DD 0 = = Half the energy from V DD is dissipated in the pmos transistor as heat, other half stored in capacitor When the gate output falls Energy in capacitor is dumped to GND Dissipated as heat in the nmos transistor 6.5
6 Switching Waveforms Example: V DD = 1.0 V, C L = 150 ff, f = 1 GHz 6.6
7 Switching Power 1 T Pswitching = idd () t VDDdt T 0 T VDD = i T 0 DD VDD = T = CV f () t dt [ Tf CV ] 2 DD sw sw DD VDD i DD (t) f sw C 6.7
8 Activity Factor Suppose the system clock frequency = f Let f sw = αf, where α = activity factor If the signal is a clock, α = 1 If the signal switches once per cycle, α = ½ Dynamic power: 2 Pswitching = α CVDD f 6.8
9 Short Circuit Current When transistors switch, both nmos and pmos networks may be momentarily ON at once Leads to a short circuit current. < 10% of dynamic power if rise/fall times are comparable for input and output We will generally ignore this component 6.9
10 Power Dissipation Sources P total = P dynamic + P static Dynamic power: P dynamic = P switching + P shortcircuit Switching load capacitances Shortcircuit current Static power: P static = (I sub + I gate + I junct + I contention )V DD Subthreshold leakage Gate leakage Junction leakage Contention current 6.10
11 Dynamic Power Example 1 billion transistor chip 50M logic transistors Average width: 12 λ Activity factor = M memory transistors Average width: 4 λ Activity factor = V 65 nm process C = 1 ff/μm (gate) ff/μm (diffusion) i Estimate dynamic power 1 GHz. Neglect wire capacitance and shortcircuit current. 6.11
12 Solution ( 6 )( λ )( μ λ )( f μ ) C logic = m/ 1.8 ff / m = 27 nf mem ( 6 )( λ)( μ λ)( μ ) C = m/ 1.8 ff / m = 171 nf 2 ( dynamic logic mem ) ( ) P = 0.1 C C GHz = 6.1 W 6.12
13 Dynamic Power Reduction 2 Pswitching = αcvdd f Try to minimize: Activity factor Capacitance Supply voltage Frequency 6.13
14 Activity Factor Estimation Let P i = Prob(node i = 1) P i = 1P i α i = P i * P i Completely random data has P = 0.5 and α = 0.25 Data is often not completely random e.g. upper bits of 64bit words representing bank account balances are usually 0 Data propagating through ANDs and ORs has lower activity factor Depends on design, but typically α
15 Switching Probability 6.15
16 Example A 4input AND is built out of two levels of gates Estimate the activity factor at each node if the inputs have P =
17 Clock Gating The best way to reduce the activity is to turn off the clock to registers in unused blocks Saves clock activity (α = 1) Eliminates all switching activity in the block Requires determining if block will be used 6.17
18 Capacitance Gate capacitance Fewer stages of logic Small gate sizes Wire capacitance Good floorplanning l to keep communicating blocks close to each other Drive long wires with inverters or buffers rather than complex gates 6.18
19 Voltage / Frequency Run each block at the lowest possible voltage and frequency that meets performance requirements Voltage Domains Provide separate supplies to different blocks Level converters required when crossing from low to high V DD domains Dynamic Voltage Scaling Adjust V DD and f according to workload 6.19
20 Static Power Static power is consumed even when chip is quiescent. Leakage draws power from nominally OFF devices Ratioed circuits burn power in fight between ON transistors 6.20
21 Static Power Example Revisit power estimation for 1 billion transistor chip Estimate static power consumption Subthreshold leakage Normal V t : 100 na/μm High V t : 10 na/μm High Vt used in all memories and in 95% of logic gates Gate leakage 5 na/μm Junction leakage negligible 6.21
22 Solution t ( )( )( )( ) W λ μ λ μ W 6 6 normalv = m / 0.05 = m highv t ( )( )( ) ( )( ) ( ) = + = λ λ 0.025μm / λ μm Isub = WnormalV 100 na/ μm+ W t highv 10 na/ μm / 2 = 584 ma t ( ) Igate = WnormalV + W t highv 5 na/ μm / 2 = 275 ma t P = ( 584 ma + static 275 ma)( 1.0 V) = 859 mw 6.22
23 Subthreshold Leakage For V ds > 50 mv Typical values in 65 nm Vgs+ η( Vds VDD) kγvsb I off = 100 V t = 0.3 V S Isub Ioff 10 I off = 10 V t = 0.4 V I off = 1 V t = 0.5 V η = I off = leakage at V gs = 0, V ds = V DD k γ = 0.1 S = 100 mv/decade 6.23
24 Stack Effect Series OFF transistors have less leakage V x > 0, so N2 has negative V gs ( V V ) η( ( ) ) η x DD V + V V V k V S S Isub = Ioff 10 = Ioff 10 N2 N1 x DD x DD γ x V x ηvdd = 1 + 2η + k γ 1+ η + kγ ηvdd 1 2η k + + γ ηv S S sub = off 10 off 10 I I I Leakage through 2stack reduces ~10x Leakage through 3stack reduces further DD 6.24
25 Leakage Control Leakage and delay trade off Aim for low leakage in sleep and low delay in active mode To reduce leakage: Increase V t : multiple V t Use low V t only in critical circuits t Increase V s : stack effect Input vector control in sleep Decrease V b Reverse body bias in sleep Or forward body bias in active mode 6.25
26 Gate Leakage Extremely strong function of t ox and V gs Negligible for older processes Approaches subthreshold leakage at 65 nm and below in some processes An order of magnitude less for pmos than nmos Control leakage in the process using t ox > 10.5 Å Highk gate dielectrics help Some processes provide multiple t ox e.g. thicker oxide for 3.3 V I/O transistors Control leakage in circuits by limiting V DD 6.26
27 NAND3 Leakage Example 100 nm process I gn = 6.3 na I gp = 0 I offn = 5.63 na I offp = 9.3 na Data from [Lee03] 6.27
28 Junction Leakage From reversebiased pn junctions Between diffusion and substrate or well Ordinary diode leakage is negligible Bandtoband tunneling (BTBT) can be significant ifi Especially in highv t transistors where other leakage is small Worst at V db = V DD Gateinduced drain leakage (GIDL) exacerbates Worst for V gd = V DD (or more negative) 6.28
29 Power Gating Turn OFF power to blocks when they are idle to save leakage Use virtual V DD (V DDV ) Gate outputs t to prevent invalid logic levels to next block Voltage drop across sleep transistor degrades performance during normal operation Size the transistor wide enough to minimize impact Switching wide sleep transistor costs dynamic power Only justified when circuit sleeps long enough 6.29
ASIC FPGA Chip hip Design Pow Po e w r e Di ssipation ssipa Mahdi Shabany
ASIC/FPGA Chip Design Power Di ssipation Mahdi Shabany Department tof Electrical ti lengineering i Sharif University of technology Outline Introduction o Dynamic Power Dissipation Static Power Dissipation
More informationLecture 81. Low Power Design
Lecture 8 Konstantinos Masselos Department of Electrical & Electronic Engineering Imperial College London URL: http://cas.ee.ic.ac.uk/~kostas Email: k.masselos@ic.ac.uk Lecture 81 Based on slides/material
More informationDynamic operation 20
Dynamic operation 20 A simple model for the propagation delay Symmetric inverter (rise and fall delays are identical) otal capacitance is linear t p Minimum length devices R W C L t = 0.69R C = p W L 0.69
More informationPower Dissipation. Where Does Power Go in CMOS?
Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit
More informationWhere Does Power Go in CMOS?
Power Dissipation Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit Path between Supply Rails during Switching Leakage Leaking
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 8 Power Dissipation in CMOS Gates Power in CMOS gates Dynamic Power Capacitance switching Crowbar
More informationLecture 5: CMOS Transistor Theory
Lecture 5: CMOS Transistor Theory Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline q q q q q q q Introduction MOS Capacitor nmos IV Characteristics
More informationEECS 141: FALL 05 MIDTERM 1
University of California College of Engineering Department of Electrical Engineering and Computer Sciences D. Markovic TuTh 111:3 Thursday, October 6, 6:38:pm EECS 141: FALL 5 MIDTERM 1 NAME Last SOLUTION
More informationObjective and Outline. Acknowledgement. Objective: Power Components. Outline: 1) Acknowledgements. Section 4: Power Components
Objective: Power Components Outline: 1) Acknowledgements 2) Objective and Outline 1 Acknowledgement This lecture note has been obtained from similar courses all over the world. I wish to thank all the
More informationMOS Transistor IV Characteristics and Parasitics
ECEN454 Digital Integrated Circuit Design MOS Transistor IV Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes
More informationLecture 7 Circuit Delay, Area and Power
Lecture 7 Circuit Delay, Area and Power lecture notes from S. Mitra Intro VLSI System course (EE271) Introduction to VLSI Systems 1 Circuits and Delay Introduction to VLSI Systems 2 Power, Delay and Area:
More informationCARNEGIE MELLON UNIVERSITY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING DIGITAL INTEGRATED CIRCUITS FALL 2002
CARNEGIE MELLON UNIVERSITY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 18322 DIGITAL INTEGRATED CIRCUITS FALL 2002 Final Examination, Monday Dec. 16, 2002 NAME: SECTION: Time: 180 minutes Closed
More informationMidterm. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. Pass Transistor Logic. Restore Output.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 16: March 21, 2017 Transmission Gates, Euler Paths, Energy Basics Review Midterm! Midterm " Mean: 79.5 " Standard Dev: 14.5 2 Lecture Outline!
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 15: March 15, 2018 Euler Paths, Energy Basics and Optimization Midterm! Midterm " Mean: 89.7 " Standard Dev: 8.12 2 Lecture Outline! Euler
More informationAnnouncements. EE141 Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power
 Fall 2002 Lecture 7 MOS Capacitances Inverter Delay Power Announcements Wednesday 123pm lab cancelled Lab 4 this week Homework 2 due today at 5pm Homework 3 posted tonight Today s lecture MOS capacitances
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2018 Final Monday, Apr 0 5 Problems with point weightings shown.
More informationCSE493/593. Designing for Low Power
CSE493/593 Designing for Low Power Mary Jane Irwin [Adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.].1 Why Power Matters Packaging costs Power supply rail design Chip and system
More informationand V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )
ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets
More informationIntegrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 14 The CMOS Inverter: dynamic behavior (sizing, inverter
More informationDelay and Power Estimation
EEN454 Digital Integrated ircuit Design Delay and Power Estimation EEN 454 Delay Estimation We would like to be able to easily estimate delay Not as accurate as simulation But make it easier to ask What
More informationVLSI Design The MOS Transistor
VLSI Design The MOS Transistor Frank Sill Torres Universidade Federal de Minas Gerais (UFMG), Brazil VLSI Design: CMOS Technology 1 Outline Introduction MOS Capacitor nmos IV Characteristics pmos IV
More informationEECS 427 Lecture 11: Power and Energy Reading: EECS 427 F09 Lecture Reminders
EECS 47 Lecture 11: Power and Energy Reading: 5.55 [Adapted from Irwin and Narayanan] 1 Reminders CAD5 is due Wednesday 10/8 You can submit it by Thursday 10/9 at noon Lecture on 11/ will be taught by
More informationLast Lecture. Power Dissipation CMOS Scaling. EECS 141 S02 Lecture 8
EECS 141 S02 Lecture 8 Power Dissipation CMOS Scaling Last Lecture CMOS Inverter loading Switching Performance Evaluation Design optimization Inverter Sizing 1 Today CMOS Inverter power dissipation» Dynamic»
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 6: Power Consumption
EE115C Winter 2017 Digital Electronic Circuits Lecture 6: Power Consumption Four Key Design Metrics for Digital ICs Cost of ICs Reliability Speed Power EE115C Winter 2017 2 Power and Energy Challenges
More informationEE115C Digital Electronic Circuits Homework #4
EE115 Digital Electronic ircuits Homework #4 Problem 1 Power Dissipation Solution Vdd =1.0V onsider the source follower circuit used to drive a load L =20fF shown above. M1 and M2 are both NMOS transistors
More informationECE 497 JS Lecture  12 Device Technologies
ECE 497 JS Lecture  12 Device Technologies Spring 2004 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jose@emlab.uiuc.edu 1 NMOS Transistor 2 ρ Source channel charge density
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 17: March 26, 2019 Energy Optimization & Design Space Exploration Penn ESE 570 Spring 2019 Khanna Lecture Outline! Energy Optimization! Design
More informationEE241  Spring 2000 Advanced Digital Integrated Circuits. Announcements
EE241  Spring 2 Advanced Digital Integrated Circuits Lecture 11 Low PowerLow Energy Circuit Design Announcements Homework #2 due Friday, 3/3 by 5pm Midterm project reports due in two weeks  3/7 by 5pm
More informationEEC 118 Lecture #5: CMOS Inverter AC Characteristics. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 8 Lecture #5: CMOS Inverter AC Characteristics Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Acknowledgments Slides due to Rajit Manohar from ECE 547 Advanced
More informationCMPEN 411 VLSI Digital Circuits Spring Lecture 14: Designing for Low Power
CMPEN 411 VLSI Digital Circuits Spring 2012 Lecture 14: Designing for Low Power [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] Sp12 CMPEN
More informationName: Answers. Mean: 83, Standard Deviation: 12 Q1 Q2 Q3 Q4 Q5 Q6 Total. ESE370 Fall 2015
University of Pennsylvania Department of Electrical and System Engineering CircuitLevel Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2015 Final Tuesday, December 15 Problem weightings
More informationFig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NORgate C = NOT (A or B)
1 Introduction to TransistorLevel Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed
More informationEE5311 Digital IC Design
EE5311 Digital IC Design Module 1  The Transistor Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai October 28, 2017 Janakiraman, IITM
More informationMOS Transistor Theory
MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors
More informationDKDT: A Performance Aware Dual Dielectric Assignment for Tunneling Current Reduction
DKDT: A Performance Aware Dual Dielectric Assignment for Tunneling Current Reduction Saraju P. Mohanty Dept of Computer Science and Engineering University of North Texas smohanty@cs.unt.edu http://www.cs.unt.edu/~smohanty/
More informationMOSFET: Introduction
E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major
More informationMOS Transistor Theory
CHAPTER 3 MOS Transistor Theory Outline 2 1. Introduction 2. Ideal IV Characteristics 3. Nonideal IV Effects 4. CV Characteristics 5. DC Transfer Characteristics 6. Switchlevel RC Delay Models MOS
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 9 Propagation delay Power and delay Tradeoffs Follow board notes Propagation Delay Switching Time
More informationChapter 5. The Inverter. V1. April 10, 03 V1.1 April 25, 03 V2.1 Nov Inverter
Chapter 5 The Inverter V1. April 10, 03 V1.1 April 25, 03 V2.1 Nov.12 03 Objective of This Chapter Use Inverter to know basic CMOS Circuits Operations Watch for performance Index such as Speed (Delay calculation)
More informationCMOS Transistors, Gates, and Wires
CMOS Transistors, Gates, and Wires Should the hardware abstraction layers make today s lecture irrelevant? pplication R P C W / R W C W / 6.375 Complex Digital Systems Christopher atten February 5, 006
More informationTHE INVERTER. Inverter
THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)
More informationLecture 12 CMOS Delay & Transient Response
EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 12 CMOS Delay & Transient Response Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology
More informationThe Physical Structure (NMOS)
The Physical Structure (NMOS) Al SiO2 Field Oxide Gate oxide S n+ Polysilicon Gate Al SiO2 SiO2 D n+ L channel P Substrate Field Oxide contact Metal (S) n+ (G) L W n+ (D) Poly 1 Transistor Resistance Two
More informationLecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline q Pass Transistors q DC Response q Logic Levels and Noise Margins q Transient Response q RC Delay Models q Delay Estimation 2 Activity 1) If the width of a transistor
More informationDigital Integrated Circuits A Design Perspective
Semiconductor Memories Adapted from Chapter 12 of Digital Integrated Circuits A Design Perspective Jan M. Rabaey et al. Copyright 2003 Prentice Hall/Pearson Outline Memory Classification Memory Architectures
More informationDesign for Manufacturability and Power Estimation. Physical issues verification (DSM)
Design for Manufacturability and Power Estimation Lecture 25 Alessandra Nardi Thanks to Prof. Jan Rabaey and Prof. K. Keutzer Physical issues verification (DSM) Interconnects Signal Integrity P/G integrity
More informationEE141Microelettronica. CMOS Logic
Microelettronica CMOS Logic CMOS logic Power consumption in CMOS logic gates Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit
More informationVLSI Design I; A. Milenkovic 1
Why Power Matters PE/EE 47, PE 57 VLSI Design I L5: Power and Designing for Low Power Department of Electrical and omputer Engineering University of labama in Huntsville leksandar Milenkovic ( www.ece.uah.edu/~milenka
More informationSpiral 2 7. Capacitance, Delay and Sizing. Mark Redekopp
27.1 Spiral 2 7 Capacitance, Delay and Sizing Mark Redekopp 27.2 Learning Outcomes I understand the sources of capacitance in CMOS circuits I understand how delay scales with resistance, capacitance
More informationLecture 3: CMOS Transistor Theory
Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos IV Characteristics pmos IV Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors
More informationEECS 151/251A Homework 5
EECS 151/251A Homework 5 Due Monday, March 5 th, 2018 Problem 1: Timing The datapath shown below is used in a simple processor. clk rd1 rd2 0 wr regfile 1 0 ALU REG 1 The elements used in the design have
More informationNanoscale CMOS Design Issues
Nanoscale CMOS Design Issues Jaydeep P. Kulkarni Assistant Professor, ECE Department The University of Texas at Austin jaydeep@austin.utexas.edu Fall, 2017, VLSI1 Class Transistor IV Review Agenda Nonideal
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 017 Final Wednesday, May 3 4 Problems with point weightings shown.
More informationDigital Integrated Circuits A Design Perspective. Semiconductor. Memories. Memories
Digital Integrated Circuits A Design Perspective Semiconductor Chapter Overview Memory Classification Memory Architectures The Memory Core Periphery Reliability Case Studies Semiconductor Memory Classification
More informationChapter 2 CMOS Transistor Theory. JinFu Li Department of Electrical Engineering National Central University Jungli, Taiwan
Chapter 2 CMOS Transistor Theory JinFu Li Department of Electrical Engineering National Central University Jungli, Taiwan Outline Introduction MOS Device Design Equation Pass Transistor JinFu Li, EE,
More informationDigital Integrated Circuits 2nd Inverter
Digital Integrated Circuits The Inverter The CMOS Inverter V DD Analysis Inverter complex gate Cost V in V out complexity & Area Integrity and robustness C L Static behavior Performance Dynamic response
More informationEffectiveness of Reverse Body Bias for Leakage Control in Scaled Dual Vt CMOS ICs
Effectiveness of Reverse Body Bias for Leakage Control in Scaled Dual Vt CMOS ICs A. Keshavarzi, S. Ma, S. Narendra, B. Bloechel, K. Mistry*, T. Ghani*, S. Borkar and V. De Microprocessor Research Labs,
More informationSemiconductor Memories
Semiconductor References: Adapted from: Digital Integrated Circuits: A Design Perspective, J. Rabaey UCB Principles of CMOS VLSI Design: A Systems Perspective, 2nd Ed., N. H. E. Weste and K. Eshraghian
More informationLecture 2: CMOS technology. Energyaware computing
EnergyAware Computing Lecture 2: CMOS technology Basic components Transistors Two types: NMOS, PMOS Wires (interconnect) Transistors as switches Gate Drain Source NMOS: When G is @ logic 1 (actually over
More informationMASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Sciences
MSSCHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Sciences nalysis and Design of Digital Integrated Circuits (6.374)  Fall 2003 Quiz #1 Prof. nantha Chandrakasan Student
More informationEE241  Spring 2005 Advanced Digital Integrated Circuits. Admin. Lecture 10: Power Intro
EE241  Spring 2005 Advanced Digital Integrated Circuits Lecture 10: Power Intro Admin Project Phase 2 due Monday March 14, 5pm (by email to jan@eecs.berkeley.edu and huifangq@eecs.berkeley.edu) Should
More informationStatus. Embedded System Design and Synthesis. Power and temperature Definitions. Acoustic phonons. Optic phonons
Status http://robertdick.org/esds/ Office: EECS 2417E Department of Electrical Engineering and Computer Science University of Michigan Specification, languages, and modeling Computational complexity,
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More information2007 Fall: Electronic Circuits 2 CHAPTER 10. DeogKyoon Jeong School of Electrical Engineering
007 Fall: Electronic Circuits CHAPTER 10 Digital CMOS Logic Circuits DeogKyoon Jeong dkjeong@snu.ac.kr k School of Electrical Engineering Seoul lnational luniversity it Introduction In this chapter, we
More informationP. R. Nelson 1 ECE418  VLSI. Midterm Exam. Solutions
P. R. Nelson 1 ECE418  VLSI Midterm Exam Solutions 1. (8 points) Draw the crosssection view for AA. The crosssection view is as shown below.. ( points) Can you tell which of the metal1 regions is the
More informationHw 6 and 7 Graded and available Project Phase 2 Graded Project Phase 3 Launch Today
EECS141 1 Hw 8 Posted Last one to be graded Due Friday April 30 Hw 6 and 7 Graded and available Project Phase 2 Graded Project Phase 3 Launch Today EECS141 2 1 6 5 4 3 2 1 0 1.5 2 2.5 3 3.5 4 Frequency
More informationCSE140L: Components and Design Techniques for Digital Systems Lab. Power Consumption in Digital Circuits. Pietro Mercati
CSE140L: Components and Design Techniques for Digital Systems Lab Power Consumption in Digital Circuits Pietro Mercati 1 About the final Friday 09/02 at 11.30am in WLH2204 ~2hrs exam including (but not
More informationLecture 4: CMOS Transistor Theory
Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Introduction q MOS Capacitor q
More informationEE371  Advanced VLSI Circuit Design
EE371  Advanced VLSI Circuit Design Midterm Examination May 1999 Name: No. Points Score 1. 20 2. 24 3. 26 4. 20 TOTAL / 90 In recognition of and in the spirit of the Stanford University Honor Code, I
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 18: March 27, 2018 Dynamic Logic, Charge Injection Lecture Outline! Sequential MOS Logic " DLatch " Timing Constraints! Dynamic Logic " Domino
More informationHightoLow Propagation Delay t PHL
HightoLow Propagation Delay t PHL V IN switches instantly from low to high. Driver transistor (nchannel) immediately switches from cutoff to saturation; the pchannel pullup switches from triode to
More informationEE141Fall 2011 Digital Integrated Circuits
EE4Fall 20 Digital Integrated Circuits Lecture 5 Memory decoders Administrative Stuff Homework #6 due today Project posted Phase due next Friday Project done in pairs 2 Last Lecture Last lecture Logical
More informationL ECE 4211 UConn F. Jain Scaling Laws for NanoFETs Chapter 10 Logic Gate Scaling
L13 04202017 ECE 4211 UConn F. Jain Scaling Laws for NanoFETs Chapter 10 Logic Gate Scaling Scaling laws: Generalized scaling (GS) p. 610 Design steps p.613 Nanotransistor issues (page 626) Degradation
More informationECE 546 Lecture 10 MOS Transistors
ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor NChannel MOSFET Built on ptype
More informationDigital Integrated Circuits A Design Perspective
Digital Integrated Circuits Design Perspective Designing Combinational Logic Circuits Fuyuzhuo School of Microelectronics,SJTU Introduction Digital IC Dynamic Logic Introduction Digital IC 2 EE141 Dynamic
More informationE40M Capacitors. M. Horowitz, J. Plummer, R. Howe
E40M Capacitors 1 Reading Reader: Chapter 6 Capacitance A & L: 9.1.1, 9.2.1 2 Why Are Capacitors Useful/Important? How do we design circuits that respond to certain frequencies? What determines how fast
More informationLecture 25. Semiconductor Memories. Issues in Memory
Lecture 25 Semiconductor Memories Issues in Memory Memory Classification Memory Architectures TheMemoryCore Periphery 1 Semiconductor Memory Classification RWM NVRWM ROM Random Access NonRandom Access
More informationEE213, Spr 2017 HW#3 Due: May 17 th, in class. Figure 1
RULES: Please try to work on your own. Discussion is permissible, but identical submissions are unacceptable! Please show all intermediate steps: a correct solution without an explanation will get zero
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 10: February 15, 2018 MOS Inverter: Dynamic Characteristics Penn ESE 570 Spring 2018 Khanna Lecture Outline! Inverter Power! Dynamic Characteristics
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More informationEE5780 Advanced VLSI CAD
EE5780 Advanced VLSI CAD Lecture 4 DC and Transient Responses, Circuit Delays Zhuo Feng 4.1 Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay
More informationLecture 16: Circuit Pitfalls
Introduction to CMOS VLSI Design Lecture 16: Circuit Pitfalls David Harris Harvey Mudd College Spring 2004 Outline Pitfalls Detective puzzle Given circuit and symptom, diagnose cause and recommend solution
More informationLecture 23. Dealing with Interconnect. Impact of Interconnect Parasitics
Lecture 23 Dealing with Interconnect Impact of Interconnect Parasitics Reduce Reliability Affect Performance Classes of Parasitics Capacitive Resistive Inductive 1 INTERCONNECT Dealing with Capacitance
More informationDigital Electronics Part II  Circuits
Digital Electronics Part  Circuits Dr.. J. Wassell Gates from Transistors ntroduction Logic circuits are nonlinear, consequently we will introduce a graphical technique for analysing such circuits The
More informationEEC 116 Lecture #5: CMOS Logic. Rajeevan Amirtharajah Bevan Baas University of California, Davis Jeff Parkhurst Intel Corporation
EEC 116 Lecture #5: CMOS Logic Rajeevan mirtharajah Bevan Baas University of California, Davis Jeff Parkhurst Intel Corporation nnouncements Quiz 1 today! Lab 2 reports due this week Lab 3 this week HW
More informationEECS 312: Digital Integrated Circuits Midterm Exam 2 December 2010
Signature: EECS 312: Digital Integrated Circuits Midterm Exam 2 December 2010 obert Dick Show your work. Derivations are required for credit; end results are insufficient. Closed book. No electronic mental
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Total Power. Energy and Power Optimization. Worksheet Problem 1
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 16: March 20, 2018 Energy and Power Optimization, Design Space Exploration Lecture Outline! Energy and Power Optimization " Tradeoffs! Design
More informationMOSFET and CMOS Gate. Copy Right by Wentai Liu
MOSFET and CMOS Gate CMOS Inverter DC Analysis  Voltage Transfer Curve (VTC) Find (1) (2) (3) (4) (5) (6) V OH min, V V OL min, V V IH min, V V IL min, V OHmax OLmax IHmax ILmax NM L = V ILmax V OL max
More informationCMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view)
CMPEN 411 VLSI Digital Circuits Lecture 04: CMOS Inverter (static view) Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date  Apr 18, 011 Duration:.5 hrs ECE334 Digital Electronics Lecturer  D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationEEC 118 Lecture #6: CMOS Logic. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #6: CMOS Logic Rajeevan mirtharajah University of California, Davis Jeff Parkhurst Intel Corporation nnouncements Quiz 1 today! Lab 2 reports due this week Lab 3 this week HW 3 due this
More informationThe CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD S D V in V out C L D S CMOS Inverter N Well V DD V DD PMOS 2λ PMOS Contacts In Out In Out Metal 1 NMOS Polysilicon NMOS GND CMOS Inverter: Steady State Response V
More informationSemiconductor memories
Semiconductor memories Semiconductor Memories Data in Write Memory cell Read Data out Some design issues : How many cells? Function? Power consuption? Access type? How fast are read/write operations? Semiconductor
More informationECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter
ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 17: March 23, 2017 Energy and Power Optimization, Design Space Exploration, Synchronous MOS Logic Lecture Outline! Energy and Power Optimization
More informationNon Ideal Transistor Behavior
Non Ideal Transistor Behavior Slides adapted from: N. Weste, D. Harris, CMOS VLSI Design, Addison Wesley, 3/e, 2004 1 Nonideal Transistor IV effects Non ideal transistor Behavior Channel Length ModulaJon
More informationMOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA
MOS Transistors Prof. Krishna Saraswat Department of Electrical Engineering S Stanford, CA 94305 saraswat@stanford.edu 1 1930: Patent on the FieldEffect Transistor! Julius Lilienfeld filed a patent describing
More informationEE241  Spring 2001 Advanced Digital Integrated Circuits
EE241  Spring 21 Advanced Digital Integrated Circuits Lecture 12 Low Power Design SelfResetting Logic Signals are pulses, not levels 1 SelfResetting Logic SenseAmplifying Logic Matsui, JSSC 12/94 2
More informationDynamic Combinational Circuits. Dynamic Logic
Dynamic Combinational Circuits Dynamic circuits Charge sharing, charge redistribution Domino logic npcmos (zipper CMOS) Krish Chakrabarty 1 Dynamic Logic Dynamic gates use a clocked pmos pullup Two modes:
More informationSEMICONDUCTOR MEMORIES
SEMICONDUCTOR MEMORIES Semiconductor Memory Classification RWM NVRWM ROM Random Access NonRandom Access EPROM E 2 PROM MaskProgrammed Programmable (PROM) SRAM FIFO FLASH DRAM LIFO Shift Register CAM
More information