Lateral SiC bipolar junction transistors for high current IC driver applications
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1 KTH ROYAL INSTITUTE OF TECHNOLOGY Lateral SiC bipolar junction transistors for high current IC driver applications Carl-Mikael Zetterling M. Ekström, H. Elahipanah, M. W. Hussain, K. Jacobs, S. Kargarrazi, A. Salemi, M. Shakir, Y. Tian SCAPE 2018
2 Outline Background Bipolar SiC Technology Project: Working on Venus Recent results Vertical and Lateral Bipolar Junction Transistors Integrated Circuits for High Temperature 2
3 Cleanroom for IC and Device Fabrication Electrum Laboratory 1300 m 2 ISO 9001 certified / controlled processes and calibrated characterization tools mm wafers Silicon Technology Silicon - IC Silicon - Microsystems Compound Semiconductors SiC Electronics, 100 mm InP - Opto / electronics GaAs - Opto / electronics Part of - the Swedish national research infrastructure for micro- and nanofabrication 3
4 Testing facilities for electrical characterization On wafer probing up to 620 C Parameter analyzer for DC characteristics Digital oscilloscope/fft for AC characteristics
5 0.5 μm 0.25 μm 0.8 μm 0.5 μm 1 μm 0.5 μm Bipolar Process Technology Emitter Contact N D = cm 3 N A = cm 3 N D = cm 3 N D = cm 3 N A = cm 3 N D = cm 3 Base Contact N type substrate Collector Contact Ion Implant Isolation Contact SiC Dry Etching Reactive Ion Etching Sacrificial Oxidation 1100 C, 3 hours, in O 2 Passivation Oxidation 1250 C, 3 hours, in N 2 O Contact Salicide Ni, 600 C, 1 min N type Ohmic Contact 950 C, 1 min P type Ohmic Contact Ti/Al deposition, patterning and etching > 900 C, 1 min TiW/Al Metal Interconnects
6 Bipolar Process for T, R and C
7 Bipolar SiC Integrated Circuit Device Structure Bipolar: -0.2 V / 100 C No sensitive gate oxide No ion implantation or defects Easy to build all functions L. Lanni, PhD thesis Silicon Carbide Bipolar Technology for High Temperature Integrated Circuits, Bipolar integrated circuits in SiC for extreme environment operation C.-M. Zetterling et al Semiconductor Science and Technology, vol. 32, p , DOI: / /aa59a7 7
8 Self-aligned Ni contacts on n- and p-type SiC Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing M. Ekström et al. ICSCRM 2017, Materials Science Forum, vol. 924, pp , DOI: / A Wafer-Scale Ni-Salicide Contact Technology on n-type 4H-SiC H. Elahipanah et al. J. Solid State Science and Technology, vol. 6, pp , DOI: / jss 8
9 The Working on Venus project Funded by Knut and Alice Wallenberg Foundation P I: Prof. Mikael Östling Adjunct Prof. Christer Fuglesang (ESA Astronaut) 8 PhD students 8 Faculty Compact lander for in-situ measurements Uncooled operation at 460 C Venus (460 C) CO 2 H 2 SO 4 A i K A W 92 bar 9
10 Working on Venus Lander Block Diagram 10
11 Recent results 15 kv Vertical Bipolar Transistor Lateral SiC Bipolar Transistors 2A Linear Voltage Regulator High Temperature Modeling of BJT High Temperature Logic Circuits High Temperature Radio Circuits 11
12 15 kv Vertical BJTs 15 kv-class Implantation-Free 4H-SiC BJTs With Record High Current Gain, A. Salemi et al., IEEE Electron Device Letters, vol. 39, p. 63, DOI: /LED A current gain of 139 for 15 kv-class BJTs 12
13 Cross-sectional View An efficient and optimized implantation-free junction termination extension (O-JTE) structure with a descending length of the JTE zones was utilized. a Zone JTE1 JTE2 JTE3 JTE4 Mesa Etching depth 260 nm 80 nm 80 nm 120 nm 1.5 µm Lengh 350 µm 263 µm 175 µm 87 µm 25 µm 13
14 BJT 2 X 2 mm 2 Base O-JTE BJT 0.3 X 0.3 mm 2 Emitter Base Emitter Anode O-JTE PiN Diode 1.25 X 1.25 mm 2 14
15 Current Gain Wafer map β 100 (91 % of the dies) β > 125 (13 % of the dies) 15
16 Lateral pnp transistors? Adds one etch to separate p-region Gain of around 30 at RT Too small current to be useful Lateral p-n-p Transistors and Complementary SiC Bipolar Technology L. Lanni et al. IEEE Electron Device Letters, vol. 35, pp , DOI: /LED
17 Lateral SiC Bipolar Transistors 500 C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits H. Elahipanah et al. IEEE Electron Dev. Lett. Vol. 38, p. 1429, DOI /LED x 1.2 mm
18 SiC Drive Circuits for High Voltage Switches A monolithic SiC drive circuit for SiC power BJTs S. Kargarrazi et al. ISPSD (2015) DOI: /ISPSD nf Load 18
19 2 A Linear Voltage Regulator 500 C, High Current Linear Voltage Regulator in 4H-SiC BJT Technology, S. Kargarrazi et al., IEEE Electron Device Letters, vol. 39, p. 548, DOI: /LED
20 Transistor Characteristics vs T ( K) Forward current gain (c) 20 V =0 BC 773 K Measurement CT model 373K 473K 573K 300K V (V) BE Temp. Ideal max. forward current gain B F (b) B F Extracted I KF I KF CT model Extracted B F B F CT model I KF Temperature [K] Forward knee current I KF [A] I C (ma) (d) V BC =0 300K 773K Meas. CT model I B =0~200 A I B =50 A V CE (V) SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K Y. Tian et al. IEEE Trans. Electron Dev., vol. 64, pp , DOI: /TED
21 Resistor and Capacitor vs T ( K) (a) 6 Normal. R Csh,buri. 5 R Csh,buri =162 N 4 DC,buri. = cm Meas. Balachandran model Arora model E D0 =65meV E D0 =95meV E D0 =125meV E D0 =65-125meV Temperature [K] Normal. R Bsh (b) E A0 =190meV E A0 =210meV E A0 =250meV Meas. Balachandran model Arora model R Bsh =36k N AB = cm Temperature [K] Rc = 200 Ω/, Rb = 20 kω/ Capacitance between highly doped emitter and metal 1 constant with temperature pf/µm 2 SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K Y. Tian et al. IEEE Trans. Electron Dev, vol. 64, pp , DOI: /TED
22 Noise Margins for Digital circuits Needs to be measured at every temperature Vcc V OH Vcc V OH V O NM H V IH V IL V OL V IL/H V I V OL NM L V O Gnd Vcc Electrical Characterization of Integrated 2-input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiC-Technology M. Shakir et al. ICSCRM 2017, Materials Science Forum, vol. 924, pp , DOI: / NM L NM H V I 22
23 2 input TTL NAND Gate Layout and Micrograph Schematic Layout Micrograph 23
24 2 input NAND Gate DC Response at 15 V VTC vs T Now also 600 C operation NM vs T 24
25 SiC HT Radio Circuits A 500 C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology, M. W. Hussain et al., IEEE Electron Device Letters, Vol. 39, p. 855, DOI: /LED MHz An Intermediate Frequency Amplifier for High-Temperature Applications, M. W. Hussain et al., IEEE Trans. Electron Devices, vol. 65, p. 1411, DOI: /TED (55 MHz, 250 C) 25
26 Conclusion SiC Bipolar Transistor Technology can be used for High Voltages and High Temperatures, enabling all building blocks for a Venus Lander, or other terrestrial extreme environment systems 26
27 Why Venus? 1. Comparative geophysics Comparing Venus, Earth and Mars (and Titan) to deepen our understanding of fundamental geophysical processes 2. Evolution of terrestrial planets Venus should be the most Earthlike planet we know Venus was probably much like early Earth Venus also foreshadows the probable fate of the Earth 3. Seismometry is needed to measure geological activity Requires lander lifetime of months to years Venus Long-life Surface Package C. Wilson, C.-M. Zetterling, W. T. Pike IAC-17-A3.5.5, Paper arxiv: v1 27
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