Analog Integrated Circuit Design (Analog CMOS Circuit Design)
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1 Aalog tegrate ircuit Desig (Aalog MOS ircuit Desig) Ali Heiary, Electrical Egieerig, g, Guila Uiversity Table of tets - MOs techology - troucti to MOS trasistor 3- urret mirror 4- Amplifier, active loa 5- Frequecy respse, stability a compesati 6- Noise i electric circuit 7- Offset 8- Example 9-Excersise
2 Refereces i. Aalog tegrate ircuit Desig, Davi Johs a Ke Marti, Joh iley & Ss, c., 997. ii. Desig of Aalog MOS tegrate ircuits, Behza Razavi, McGraw-Hill,. iii. Aalysis a Desig of Aalog tegrate ircuits, P.R.Gray, P.J.Hurst, S.H.ewis, a R.G.Meyer, Joh iley & Ss, c.,. iv. Aalog Desig Essetials, illy M.. Sase., 8. 3 MOS Basic Operati & arge-sigal Moelig 4
3 MOS Basic Operati & arge-sigal Moelig (threshol voltage) th φ + φ ms f Q + b Q ss hael is preset for th th 5 MOS Basic Operati & arge-sigal Moelig (Output characteristic) f ( ) For s the chael charge is uiform a equals to: Q & Q T & ε t 6 3
4 MOS Basic Operati & arge-sigal Moelig (Output characteristic) The chael resistace is equal: t R s σa qµ t Q µ µ 7 MOS Basic Operati & arge-sigal Moelig (Output characteristic) f we apply verysmall voltage to the rai respect to the source we Still have almost uiform chael a the the curret ca be calculate as. s µ R s 3 A voltage ctrolle resistor s 8 4
5 MOS Basic Operati & arge-sigal Moelig (Output characteristic) By icreasig s the chael thickess will ecrease i rai sie a therefore the chael resistace will icrease. ( ( )) Q ( x) x Aqµ E t( x) qµ Q ( x) µ v x v x 9 MOS Basic Operati & arge-sigal Moelig (Output characteristic) ( ( x) ) µ v x s ( x ) x ( ) µ v µ ohmic s s 5
6 MOS Basic Operati & arge-sigal Moelig (Output characteristic) Ohmic regi 3 hat happes at > s? 3 s MOS Basic Operati & arge-sigal Moelig (Output characteristic) At s the chael i rai sies will piche off a therefore icreasig s caot Ohmic regi icrease the rai curret aymore. (The extra voltage will rop piche regi. 3 Active regi active µ ( ) th s 6
7 MOS Basic Operati & arge-sigal Moelig (chael shorteig effect ) 3 MOS Basic Operati & arge-sigal Moelig (chael shorteig effect ) 3 s 4 7
8 MOS Basic Operati & arge-sigal Moelig (chael shorteig effect ) ( ) ε + φ kt si s a φ l qna q i N N active s > active s + s ( ) s s ε qn ( + φ ) s si a 5 MOS Basic Operati & arge-sigal Moelig (chael shorteig effect ) active λ Early voltage: ( ) + λ( ) th µ ε qn ( + φ ) s si E a r s ( ) g ( +φ ) s ε si qn a s s s λ λ E 6 8
9 MOS Basic Operati & arge-sigal Moelig (chael shorteig effect ) For + φ -3 & 6 cm s N a E 8 µm E r s 7 th MOS Basic Operati & arge-sigal Moelig (Boy effect) As the source-bulk voltage, sb, becomes larger the epleti regi betwee the chael a the substrate becomes wier, a therefore Q b, i th compet will icrease which result to larger th. th Qb Qss φms + φ f + ( φ + φ ) th + f sb γ f γ qε N si a 8 9
10 MOS Basic Operati & Small-Sigal Moelig i active regi 9 MOS Basic Operati & Small-Sigal Moelig i active regi g ( ) µ th m µ g m ( ) th g s s th th s γ φ + f sb g m
11 MOS Basic Operati & Small-Sigal Moelig i active regi + 3 ov g ov sb ( A + A ) s ch j + φ sb + P s j sw b A j + P + φ b j sw MOS Basic Operati & Small-Sigal Moelig i ohmic regi g + ov sb b ( As + Ach ) j + Ps j sw + sb φ ( A + A ) ch + j b + P φ j sw
12 MOS Basic Operati & Small-Sigal Moelig i OFF regi g ov sb b A s A j + P s + sb φ j + P + φ b j sw j sw? gb 3 MOS Basic Operati & Small-Sigal Moelig i OFF regi gb is a ew capacitor which is the gate-to-substrate to capacitace. This capacitor is highly liear a epeet the gate voltage. i accumulati: gb 4
13 MOS Basic Operati & Small-Sigal Moelig i OFF regi f the gate-to-sourceto voltage is arou, the gb is equal to i series with the chael-to-bulk epleti capacitace a is much smaller, especially whe the substrate is lightly ope: ep. + 5 MOS Basic Operati & Small-Sigal Moelig i OFF regi Fially, for th, iversi layer exist a ay chage will chage the amout of charge i this layer. gb 6 3
14 MOS Basic Operati & Small-Sigal Moelig i OFF regi gb ow freq. accumulati Depl. iversi ow freq. high freq. 7 MOS Basic Operati (short-chael effect) The most importat short-chael effect i MOS is ue to elocity Saturati. At high electric fiels the carrier velocities approach thermal velocities. Subsequetly carrier velocity icreases less slowly tha it woul liearly at low electric fiel. oltage supply reucti is ot as fast as the feature size shrikig. So the effect of mobility egraati ca be see i more avace techology.. 8 4
15 MOS Basic Operati (weak iversi) Up to ow we ly csiere the rift curret of iverte chael. A therefore, the curret below threshol csiere to be zero. However eve below threshol (weak iversi) there is some iffusi curret ue to ifferece i surface potetial at rai a source sies. The rai curret i weak iversi ca be calculate as: t exp T th exp T s 9 MOS Basic Operati (weak iversi) For s >> T this curret ca be writte as: t th exp exp T T g m T gm T 3 5
16 MOS Basic Operati (weak iversi) But where is the borer of these two, strg iversi (si) a weak iversi (wi) regi. th > ( 7m) T si 3 MOS Basic Operati (weak iversi) cstat elocity saturati (S) 3 6
17 MOS Basic Operati (weak iversi) 33 g m MOS Basic Operati (weak iversi) gm T gm ater we will explai more about weak iversi with some example. t 34 7
18 MOS Basic Operati (weak iversi)simulati results 35 The MOS parameter for ha calculati mos moel T.7 [] GAMA.45 PH.9[] NSUB9e4 [cm-3] D.8e-6 [m] U 35[cm/vs] AMBDA. [v-] TOX9e-9[m] PB.9 [] J.56e-3[F/m] JS.35e- [F/m] MJ.45 MJS. GDO.4e-9 [F/m] pmos moel T-.8 [] GAMA.4 PH.8[] NSUB5e4 [cm-3] D.9e-6 [m] U [cm/vs] AMBDA. [v-] TOX9e-9[m] PB.9 [] J.94e-3[F/m] JS.3e- [F/m] MJ. 5 MJS.3 GDO.5e-8 [F/m] 36 8
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