EECS130 Integrated Circuit Devices

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1 EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16

2 Announcements Professor Javey will hold his OH at 3-5 pm for Wednesday (400 Cory). Exam review: 8-10 pm tonight, (521 Cory). Exam: Thursday. Make sure you come early.

3 Carrier Injection at the MS Contacts For each MS junction, 3 components contribute to the overall injection current: Thermionic emission current Tunneling current Thermally activated tunneling current What parameters affect each component?

4 Is the net current zero? Why?

5

6 Question: How do p+n junctions differ from MS junctions under a forward bias?

7 Question How does the band diagram look for a MS junction with a Schottky barrier height of zero?

8

9

10 Applications of Schottky Diodes I I Schottky diode φ B PN junction diode I 0 of a Schottky diode is 10 3 to 10 8 times larger than a PN junction diode, depending on φ B. A Schottky diode is the preferred rectifier in low voltage, high current applications. V

11 Ohmic MS Contacts Two ways to achieve ohmic MS contacts: Reduce the Schottky barrier height. How??? Reduce the Schottky barrier width (depletion width). How???? How would each approach give you an ohmic contact?

12

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14 Schottky Barriers and Fermi Level Pinning In actual fabricated metal-si junctions, Fermi level pinning prevents us from ever getting zero Schottky barrier height. Two tricks for reducing Fermi level pinning: 1. thin interfacial oxide/nitride 2. 1D semiconductors 1D nanotube Diameter ~ 1 nm

15 MOS Capacitors (MOSC) MOS: Metal-Oxide-Semiconductor V g Chapter 16 gate metal gate V g SiO 2 N + SiO 2 N + Si body Si-body (P) MOS capacitor MOS transistor MOS transistor is the most important device in modern microelectronics.

16

17 Ideal MOS Capacitor Oxide has zero charge, and no current can pass through it. No charge centers are present in the oxide or at the oxidesemiconductor interface. Semiconductor is uniformly doped Φ M = Φ S = χ + (E C E F ) FB

18 Ideal MOS Capacitor At Equilibrium:

19 Ideal MOS Capacitor Under Bias Let us ground the semiconductor and start applying different voltages, V G, to the gate V G can be positive, negative or zero with respect to the semiconductor E F,metal E F,semiconductor = q V G Since oxide has no charge (it s an insulator with no available carriers or dopants), d E oxide / dx = ρ/ε = 0; meaning that the E-field inside the oxide is constant.

20 P-type Si, V G < 0 (accumulation) Φm qv G ε Accumulation of holes E C E i Negative voltage attracts holes to the Si-oxide interface. This is called accumulation condition. E i E F should increases near the surface of Si. E x E V E Fs oxide = 0 Eoxide = const. = 1 q E x The oxide energy band has constant slope as shown. No current flows in the SiO2 layer E F in Si is constant. i

21 P-type Si, V G < 0 (accumulation) V G < 0 Sheet of electrons M O S ρ E + + Sheet of holes x Accumulation of holes near silicon surface, and electrons near the metal surface. Similar to a parallel plate capacitor structure.

22 p-type Si, V G > 0 (depletion) E Depletion ρ = positive E + + E FM E C E i E Fs E V + ρ = ρ = negative M O S

23 p-type Si, V G >> 0 (inversion) E E C E Immobile acceptors Ei FS E FM E FM E V - Mobile electrons

24 Inversion condition If we continue to increase the positive gate voltage, the bands at the semiconductor bends more strongly. At sufficiently high voltage, E i can be below E F indicating large concentration of electrons in the conduction band. We say the material near the surface is inverted. The inverted layer is not gotten by chemical doping, but by applying E-field. Where did we get the electrons from? When E i (surface) E i (bulk) = 2 [E F E i (bulk)], the condition is start of inversion, and the voltage V G applied to gate is called V T (threshold voltage). For V G > V T, the Si surface is inverted.

25 Ideal MOS Capacitor n-type Si

26 The Case of Φ M Φ S In what direction do the electrons flow in order to reach equilibrium? What path do they take to reach equilibrium?

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