Tunnel-FET: bridging the gap between prediction and experiment through calibration
|
|
- Meghan Summers
- 5 years ago
- Views:
Transcription
1 Tunnel-FET: bridging the gap between prediction and experiment through calibration Anne Verhulst Quentin Smets, Jasper Bizindavyi, Mazhar Mohammed, Devin Verreck, Salim El Kazzi, Alireza Alian, Yves Mols, Dennis Lin, Bart Sorée, Nadine Collaert, Guido Groeseneken and Marc Heyns 10 th November 2017 PUBLIC
2 Outline Motivation Calibration of SRH and TAT in homostructure InGaAs diodes Calibration of band-tails current in homostructure InGaAs diodes Quantum-mechanical aspect of traps Experimental TFETs at imec Conclusions 2
3 Ring oscillator performance comparison MOSFET/TFET GaAsSb p 300CGP 50CGP MOSFET TFETs InGaAs i ~2x 300CGP 50CGP n Circuit-level evaluation of TFETs, including parasitic resistances/capacitances: established BUT: no device-related parasitics yet in TFET device predictions 3
4 Sources of parasitic device currents Trap-assisted tunneling (TAT) in undoped channel in highly-doped source/drain at semiconductor hetero-interfaces at semiconductor-oxide interface Shockley-Read-Hall (SRH) in undoped channel in highly-doped source/drain Band tails due to structural disorder due to thermal fluctuations Phonon-assisted tunneling or Auger 1 generation/recombination (Random) electrostatic variations due to trap charges at semiconductor-oxide interface 2 Calibration and (correct) theoretical models required [1] J. Teherani et al., J. Appl. Phys. 120, (2016); [2] P. Asbeck et al., Steep Transistor Workshop, Oct
5 I ds [A/μm 2 ] E g,eff [ev] I ds [A/μm 2 ] E 1 [ev] Calibration history BTBT calibration with p-i-n diodes t i =9nm In 0.53 Ga 0.47 As t i =18nm BTBT calibration t i =46nm with p-i-n diodes 2 experiment calib. simulation FIQC proof with MOSCAPs 3 First subband energy level E 1 exp FIQC prediction E g,eff calibration with No FIQC hetero p-i-i-n diodes 4 In x Ga 1-x As and GaAs 1-y Sb y x Source doping [cm -3 ] y V reverse bias [V] experiment simulation Si 0.75 Ge 0.25 V reverse bias [V] [1] Smets, J. Appl. Phys. 115, (2014); [2] Kao, J. Appl. Phys. 116, (2014); [3] Smets, Appl. Phys. Lett. 105, (2014); [4] Smets, Trans. Electron Dev. 63, 4248 (2016) lattice constant [Å] 5
6 Outline Motivation Calibration of SRH and TAT in homostructure InGaAs diodes Calibration of band-tails current in homostructure InGaAs diodes Quantum-mechanical aspect of traps Experimental TFETs at imec Conclusions 6
7 Parasitics in forward bias 1 : - bulk SRH recombination - bulk TAT InGaAs p + -n + diode p-i-n diode Forward bias: expected SRH/TAT currents p p i n n SRH in p-doped region dominant TAT increases with increasing forward bias [1] Q. Smets et al., Trans. Electron Dev. 64, 3622 (2017). 7
8 J [A/μm 2 ] Temperature dependence of parasitics in forward bias 1 InGaAs p + -n + diode p-i-n diode p+/n+ InGaAs diode p n Forward bias V np [V] Reverse bias Temperature-dependent measurements distinguish SRH/TAT/BTBT SRH: temperature-dependent TAT: increases with forward bias and temperature-independent [1] Q. Smets et al., Trans. Electron Dev. 64, 3622 (2017). 8
9 J [A/μm 2 ] Parasitics calibration in forward (and reverse) bias 1 : bulk-srh and bulk-tat p+/n+ InGaAs diode p simulation experiment p-i-n InGaAs diode simulation experiment E T,SRH τ SRH Calibrated parameters E i ± 0.16 ev 7 ns (1+N dop /10 16 cm -3 ) n E T,TAT E i ev τ TAT 1 μs (1+N dop /10 16 cm -3 ) V np [V] V np [V] o Temperature-dependent measurements allows calibration SRH and TAT o 2 diodes allow doping-dependent calibration [1] Q. Smets et al., Trans. Electron Dev. 64, 3622 (2017). 9
10 TFET predictions with calibrated SRH/TAT models 1 All-InGaAs p-n-i-n TFET with graded doping source p n-pocket transfer characteristics drain i n gate oxide o Calibrated bulk SRH and TAT applied to TFET: I TAT (and I SRH ) 50 pa/μm not limiting o To be calibrated: interface-trap-based (Dit) and hetero-interface SRH/TAT currents 2 [1] Q. Smets et al., Trans. Electron Dev. 64, 3622 (2017). [2] S. Sant et al., Trans. Electron Dev. 63, 4240 (2016). 10
11 Outline Motivation Calibration of SRH and TAT in homostructure InGaAs diodes Calibration of band-tails current in homostructure InGaAs diodes Quantum-mechanical aspect of traps Experimental TFETs at imec Conclusions 11
12 Developing ballistic band-tails model: the band tails 1 Extended states Very localized states E edge,v E edge,c o Spatial fluctuations of dopant atoms band tails in doped regions o Our model: band tails from conventional band edge to E edge [1] J. Bizindavyi et al., 5 th Berkeley Symposium on E3S and Steep Transistors Workshop (IEEE), Oct. (2017). 12
13 Developing ballistic band-tails model: approach 1 Assumptions: Valence band-tails: k = k 1,v exp E 1,v E bts 3E 0,v Valence-band tails Conduction band-tails: k = k 1,c exp E bts E 1,c 3E 0,c Ballistic tunneling - conserving k J bts bts = - according to Tsu-Esaki formula: q x p 2π 2 ħ න qe x dx න k dk T E bts,v x, k f n (E bts,c x, k f p (E bts,v x, k x n k o Arbitrary energy dispersion, with correct band-tails DOS profile (Urbach energy E 0 ) o Ballistic tunneling similar to conventional BTBT tunneling [1] J. Bizindavyi et al., 5 th Berkeley Symposium on E3S and Steep Transistors Workshop (IEEE), Oct. (2017). 13
14 Band-tails contributions in semiconductor device 1 P-i-n diode in forward bias bts-to-cond bts-to-bts val-to-bts 3 current contributions: band-tails-to-band-tails, band-tails-to-cond.band and val.band-to-band-tails current [1] J. Bizindavyi et al., 5 th Berkeley Symposium on E3S and Steep Transistors Workshop (IEEE), Oct. (2017). 14
15 Experiment-theory discrepancy: band-tails current? p-i-n InGaAs diode Forward Mismatch Reverse Experiment BTBT + diff. Possible mechanisms: Phonon-assisted tunneling Band-tails tunneling Impossible to remove experiment-theory discrepancy with BTBT only What causes mismatch in forward bias? 15
16 Calibrate band tails model with p-i-n InGaAs diode 1 Experiment vs BTBT + diffusion Forward Reverse Mismatch Data + calibrated band-tails model Experiment BTBT + diff. o Calibration possible! E 0 = 70 mev for E edge of 100meV o Strong band-tails-to-band-tails tunneling current [1] J. Bizindavyi et al., 5 th Berkeley Symposium on E3S and Steep Transistors Workshop (IEEE), Oct. (2017). 16
17 TFET predictions with calibrated band-tails model 1 TFET architecture TFET prediction Predicted impact on TFET: larger than bulk-srh and bulk-tat Observable contribution at ~ 1nA/μm further investigation needed [1] J. Bizindavyi et al., 5 th Berkeley Symposium on E3S and Steep Transistors Workshop (IEEE), Oct. (2017). 17
18 Outline Motivation Calibration of SRH and TAT in homostructure InGaAs diodes Calibration of band-tails current in homostructure InGaAs diodes Quantum-mechanical aspect of traps Experimental TFETs at imec Conclusions 18
19 E [ev] Level shift [mev] Impact of E-field on trap energy level 1 Trap level near E c Change of trap level with E-field o Trap energy level becomes trap energy range at high E-field o Emission rate from trap increases due to this broadening quantum-mechanical modeling required for TAT-predictions in TFET [1] M. Mohammed et al., J. Appl. Phys. 120, (2016). 19
20 Outline Motivation Calibration of SRH and TAT in homostructure InGaAs diodes Calibration of band-tails current in homostructure InGaAs diodes Quantum-mechanical aspect of traps Experimental TFETs at imec Conclusions 20
21 SS [mv/dec] I g, I d [A] InGaAs TFET with sub-nanometer EOT and sub-60 mv/dec SS at RT 1 metal TiN SiO 2 Mo n+ InGaAs Mo Gate oxide 3nm InP Zn diffused 90nm i-53% InGaAs Transfer characteristics SS versus I ds Semi-insulating InP substrate Source doping ~ 2x10 19 at/cm 3 EOT = 0.8nm [1] A. Alian et al., Appl. Phys. Lett. 109, (2016). V gs [V] I ds [μa/μm] Homostructure TFET with 1.5 decades of current at sub-60mv/dec swing Excellent agreement of transfer characteristics up to 10nA/μm with QM predictions 21
22 Outline Motivation Calibration of SRH and TAT in homostructure InGaAs diodes Calibration of band-tails current in homostructure InGaAs diodes Quantum-mechanical aspect of traps Experimental TFETs at imec Conclusions 23
23 Conclusions & outlook Circuit-level evaluation of parasitic-free TFETs: established Need for TFET predictions including parasitics Bulk-SRH and bulk-tat: feasible to reach non-impacting current levels Band-tails due to random doping: potentially impacting TFET performance Further investigation required Need to include relevant quantum-mechanical effects in parasitics modeling 24
24 Acknowledge The TFET research team Imec s (sub-)10nm CMOS partners including, Samsung, TSMC, GlobalFoundries, Intel, SK-Hynix,Toshiba, Micron, Qualcomm, Sony, Huawei and SanDisk J. Bizindavyi acknowledges the support of the FWO-Vlaanderen for a Strategic Basic Research PhD fellowship. The European Commission and Regional authorities for their support of European collaborative projects 25
25 Thank you!
26 PUBLIC
Classification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More informationIII-V Nanowire TFETs
III-V Nanowire TFETs Lars-Erik Wernersson Lund Univeristy, Sweden Final Workshop 10 November 2017 Energy Efficient Tunnel FET Switches and Circuits imec 1 OUTLINE Status of III-V NW TFETs TFET Variability
More informationImaginary Band Structure and Its Role in Calculating Transmission Probability in Semiconductors
Imaginary Band Structure and Its Role in Calculating Transmission Probability in Semiconductors Jamie Teherani Collaborators: Paul Solomon (IBM), Mathieu Luisier(Purdue) Advisors: Judy Hoyt, DimitriAntoniadis
More informationUltra-Scaled InAs HEMTs
Performance Analysis of Ultra-Scaled InAs HEMTs Neerav Kharche 1, Gerhard Klimeck 1, Dae-Hyun Kim 2,3, Jesús. A. del Alamo 2, and Mathieu Luisier 1 1 Network for Computational ti Nanotechnology and Birck
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are
More informationAnalysis of Band-to-band. Tunneling Structures. Title of Talk. Dimitri Antoniadis and Judy Hoyt (PIs) Jamie Teherani and Tao Yu (Students) 8/21/2012
1 Analysis of Band-to-band Title of Talk Tunneling Structures Dimitri Antoniadis and Judy Hoyt (PIs) Jamie Teherani and Tao Yu (Students) 8/21/2012 A Science & Technology Center Vertical Type-II TFET Structure
More informationThree-Dimensional Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical. Interconnects
Three-Dimensional Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical eptember 2011 Interconnects Leonid Tsybeskov Department of Electrical and Computer Engineering New Jersey Institute
More informationSuppression of Gate-Induced Drain Leakage by Optimization of Junction Profiles in 22 nm and 32 nm SOI nfets
Suppression of Gate-Induced Drain Leakage by Optimization of Junction Profiles in 22 nm and 32 nm SOI nfets Andreas Schenk a,, a Integrated Systems Laboratory, ETH Zurich, Gloriastrasse 35, CH-8092, Switzerland
More informationComparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs
Comparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs Cheng-Ying Huang 1, Sanghoon Lee 1, Evan Wilson 3, Pengyu Long 3, Michael Povolotskyi 3, Varistha Chobpattana
More informationMOSFET: Introduction
E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major
More informationInGaAs Double-Gate Fin-Sidewall MOSFET
InGaAs Double-Gate Fin-Sidewall MOSFET Alon Vardi, Xin Zhao and Jesús del Alamo Microsystems Technology Laboratories, MIT June 25, 214 Sponsors: Sematech, Technion-MIT Fellowship, and NSF E3S Center (#939514)
More informationOMEN an atomistic and full-band quantum transport simulator for post-cmos nanodevices
Purdue University Purdue e-pubs Other Nanotechnology Publications Birck Nanotechnology Center 8-18-28 OMEN an atomistic and full-band quantum transport simulator for post-cmos nanodevices Mathieu Luisier
More informationThe Critical Role of Quantum Capacitance in Compact Modeling of Nano-Scaled and Nanoelectronic Devices
The Critical Role of Quantum Capacitance in Compact Modeling of Nano-Scaled and Nanoelectronic Devices Zhiping Yu and Jinyu Zhang Institute of Microelectronics Tsinghua University, Beijing, China yuzhip@tsinghua.edu.cn
More informationAS MOSFETS reach nanometer dimensions, power consumption
1 Analytical Model for a Tunnel Field-Effect Transistor Abstract The tunnel field-effect transistor (TFET) is a promising candidate for the succession of the MOSFET at nanometer dimensions. Due to the
More informationCME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:
CME 300 Properties of Materials ANSWERS: Homework 9 November 26, 2011 As atoms approach each other in the solid state the quantized energy states: are split. This splitting is associated with the wave
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationCurrent mechanisms Exam January 27, 2012
Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms
More informationComponents Research, TMG Intel Corporation *QinetiQ. Contact:
1 High-Performance 4nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V CC =.5V) Logic Applications M. Radosavljevic,, T. Ashley*, A. Andreev*, S.
More informationEnhanced Mobility CMOS
Enhanced Mobility CMOS Judy L. Hoyt I. Åberg, C. Ni Chléirigh, O. Olubuyide, J. Jung, S. Yu, E.A. Fitzgerald, and D.A. Antoniadis Microsystems Technology Laboratory MIT, Cambridge, MA 02139 Acknowledge
More informationLecture 6: 2D FET Electrostatics
Lecture 6: 2D FET Electrostatics 2016-02-01 Lecture 6, High Speed Devices 2014 1 Lecture 6: III-V FET DC I - MESFETs Reading Guide: Liu: 323-337 (he mainly focuses on the single heterostructure FET) Jena:
More informationNegative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current
Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current Nadim Chowdhury, S. M. Farhaduzzaman Azad and Quazi D.M. Khosru Department of Electrical
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More information4.2 Molecular orbitals and atomic orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule.
4. Molecular orbitals and atomic orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. Suppose that each atomic wavefunction is 1s wavefunction. This system of
More informationIBM Research Report. Quantum-Based Simulation Analysis of Scaling in Ultra-Thin Body Device Structures
RC23248 (W0406-088) June 16, 2004 Electrical Engineering IBM Research Report Quantum-Based Simulation Analysis of Scaling in Ultra-Thin Body Device Structures Arvind Kumar, Jakub Kedzierski, Steven E.
More informationLow Frequency Noise in MoS 2 Negative Capacitance Field-effect Transistor
Low Frequency Noise in MoS Negative Capacitance Field-effect Transistor Sami Alghamdi, Mengwei Si, Lingming Yang, and Peide D. Ye* School of Electrical and Computer Engineering Purdue University West Lafayette,
More informationLecture 3: CMOS Transistor Theory
Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos I-V Characteristics pmos I-V Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors
More informationIndium arsenide quantum wire trigate metal oxide semiconductor field effect transistor
JOURNAL OF APPLIED PHYSICS 99, 054503 2006 Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor M. J. Gilbert a and D. K. Ferry Department of Electrical Engineering and
More informationSemiconductor device structures are traditionally divided into homojunction devices
0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting
More informationQuiz #1 Practice Problem Set
Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions
More informationQuantification of Trap State Densities at High-k/III-V Interfaces
Quantification of Trap State Densities at High-k/III-V Interfaces Roman Engel-Herbert*, Yoontae Hwang, and Susanne Stemmer Materials Department, University of California, Santa Barbara *now at Penn State
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationHigh Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs
High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs Prof. (Dr.) Tejas Krishnamohan Department of Electrical Engineering Stanford University, CA & Intel Corporation
More informationSteep Slope Transistors beyond the Tunnel FET concept. David Esseni, University of Udine
Steep Slope Transistors beyond the Tunnel FET concept David Esseni, University of Udine Overcome Boltzmann s Tyranny Sub-threshold swing may be expressed as V g = φ s V S/D G In MOSFETs: - second term
More informationErik Lind
High-Speed Devices, 2011 Erik Lind (Erik.Lind@ftf.lth.se) Course consists of: 30 h Lectures (H322, and Fys B check schedule) 8h Excercises 2x2h+4h Lab Excercises (2 Computer simulations, 4 RF measurment
More informationALD high-k and higher-k integration on GaAs
ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu 1), Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D. Ye 1)* 1) School of Electrical and Computer Engineering, Purdue University,
More informationModeling of the Substrate Current and Characterization of Traps in MOSFETs under Sub-Bandgap Photonic Excitation
Journal of the Korean Physical Society, Vol. 45, No. 5, November 2004, pp. 1283 1287 Modeling of the Substrate Current and Characterization of Traps in MOSFETs under Sub-Bandgap Photonic Excitation I.
More informationLEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
More informationECE-305: Fall 2017 MOS Capacitors and Transistors
ECE-305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel Electrical and Computer Engineering Purdue
More informationLecture 4: CMOS Transistor Theory
Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Introduction q MOS Capacitor q
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More information! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
More informationZuhui Chen, Xing Zhou, Guan Huei See, Zhaomin Zhu, and Guojun Zhu
Zuhui Chen, Xing Zhou, Guan Huei See, Zhaomin Zhu, and Guojun Zhu School of EEE, Nanyang Technological University, Singapore Slide No.1/18 Outline Motivations. Theory of interface traps. Theory of unified
More informationLecture #27. The Short Channel Effect (SCE)
Lecture #27 ANNOUNCEMENTS Design Project: Your BJT design should meet the performance specifications to within 10% at both 300K and 360K. ( β dc > 45, f T > 18 GHz, V A > 9 V and V punchthrough > 9 V )
More informationExtensive reading materials on reserve, including
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More informationTemperature Dependent Optical Band Gap Measurements of III-V films by Low Temperature Photoluminescence Spectroscopy
Temperature Dependent Optical Band Gap Measurements of III-V films by Low Temperature Photoluminescence Spectroscopy Linda M. Casson, Francis Ndi and Eric Teboul HORIBA Scientific, 3880 Park Avenue, Edison,
More informationELEC 4700 Assignment #2
ELEC 4700 Assignment #2 Question 1 (Kasop 4.2) Molecular Orbitals and Atomic Orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. Suppose that each atomic wavefunction
More informationIMPACT OF GENERATION CENTERS ON THE RETENTION 1T-FBRAM
IMPACT OF GENERATION CENTERS ON THE RETENTION TIME IN 1T-FBRAM M. AOULAICHE, CH. CAILLAT* E. SIMOEN, G. GROESENEKEN AND M. JURCZAK IMEC, KAPELDREEF 75, B 3001 LEUVEN, BELGIUM * MICRON TECHNOLOGYBELGIUM,
More informationElectron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.
Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single
More informationUltra-low-voltage bilayer graphene tunnel FET
Ultra-low-voltage bilayer graphene tunnel FET 1 arxiv:0906.1254v1 [cond-mat.mes-hall] 6 Jun 2009 Gianluca Fiori, Giuseppe Iannaccone Dipartimento di Ingegneria dell Informazione : Elettronica, Informatica,
More informationSemiconductor Detectors are Ionization Chambers. Detection volume with electric field Energy deposited positive and negative charge pairs
1 V. Semiconductor Detectors V.1. Principles Semiconductor Detectors are Ionization Chambers Detection volume with electric field Energy deposited positive and negative charge pairs Charges move in field
More informationSession 0: Review of Solid State Devices. From Atom to Transistor
Session 0: Review of Solid State Devices From Atom to Transistor 1 Objective To Understand: how Diodes, and Transistors operate! p n p+ n p- n+ n+ p 2 21 Century Alchemy! Ohm s law resistivity Resistivity
More informationLecture 5: CMOS Transistor Theory
Lecture 5: CMOS Transistor Theory Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline q q q q q q q Introduction MOS Capacitor nmos I-V Characteristics
More informationThe Devices. Jan M. Rabaey
The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models
More informationA final review session will be offered on Thursday, May 10 from 10AM to 12noon in 521 Cory (the Hogan Room).
A final review session will be offered on Thursday, May 10 from 10AM to 12noon in 521 Cory (the Hogan Room). The Final Exam will take place from 12:30PM to 3:30PM on Saturday May 12 in 60 Evans.» All of
More informationAn Analytical Model for a Gate-Induced-Drain-Leakage Current in a Buried-Channel PMOSFET
Journal of the Korean Physical Society, Vol. 4, No. 5, November 00, pp. 86 867 An Analytical Model for a Gate-Induced-Drain-Leakage Current in a Buried-Channel PMOSFET Seong-Ho Kim, Sung-Eun Kim, Joo-Han
More informationMOS Transistor I-V Characteristics and Parasitics
ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes
More informationAdvanced Topics In Solid State Devices EE290B. Will a New Milli-Volt Switch Replace the Transistor for Digital Applications?
Advanced Topics In Solid State Devices EE290B Will a New Milli-Volt Switch Replace the Transistor for Digital Applications? August 28, 2007 Prof. Eli Yablonovitch Electrical Engineering & Computer Sciences
More informationSub-Boltzmann Transistors with Piezoelectric Gate Barriers
Sub-Boltzmann Transistors with Piezoelectric Gate Barriers Raj Jana, Gregory Snider, Debdeep Jena Electrical Engineering University of Notre Dame 29 Oct, 2013 rjana1@nd.edu Raj Jana, E3S 2013, Berkeley
More informationSolid State Device Fundamentals
Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 Outline - Goals of the course. What is electronic device?
More informationGaN based transistors
GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1-x N barrier i-gan Buffer i-sic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationIII-V CMOS: What have we learned from HEMTs? J. A. del Alamo, D.-H. Kim 1, T.-W. Kim, D. Jin, and D. A. Antoniadis
III-V CMOS: What have we learned from HEMTs? J. A. del Alamo, D.-H. Kim 1, T.-W. Kim, D. Jin, and D. A. Antoniadis Microsystems Technology Laboratories, MIT 1 presently with Teledyne Scientific 23rd International
More informationTechnology Development for InGaAs/InP-channel MOSFETs
MRS Spring Symposium, Tutorial: Advanced CMOS Substrates, Devices, Reliability, and Characterization, April 13, 2009, San Francisco Technology Development for InGaAs/InP-channel MOSFETs Mark Rodwell University
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET N-Type, P-Type. Semiconductor Physics.
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 217 MOS Transistor Theory, MOS Model Lecture Outline! Semiconductor Physics " Band gaps " Field Effects! MOS Physics " Cutoff
More informationIntroduction to Optoelectronic Device Simulation by Joachim Piprek
NUSOD 5 Tutorial MA Introduction to Optoelectronic Device Simulation by Joachim Piprek Outline:. Introduction: VCSEL Example. Electron Energy Bands 3. Drift-Diffusion Model 4. Thermal Model 5. Gain/Absorption
More informationPhysics an performance of III-V nanowire heterojunction TFETs including phonon and impurity band tails:
Physics an performance of III-V nanowire heterojunction TFETs including phonon and impurity band tails: An atomistic mode space NEGF quantum transport study. A. Afzalian TSMC, Leuven, Belgium (Invited)
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing
EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104-113) S R on D CMOS Manufacturing Process (pp. 36-46) S S C GS G G C GD
More informationOptimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Article Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The evices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationLecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination
Lecture 8 Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Reading: (Cont d) Notes and Anderson 2 sections 3.4-3.11 Energy Equilibrium Concept Consider a non-uniformly
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 10/30/2007 MOSFETs Lecture 4 Reading: Chapter 17, 19 Announcements The next HW set is due on Thursday. Midterm 2 is next week!!!! Threshold and Subthreshold
More informationHow a single defect can affect silicon nano-devices. Ted Thorbeck
How a single defect can affect silicon nano-devices Ted Thorbeck tedt@nist.gov The Big Idea As MOS-FETs continue to shrink, single atomic scale defects are beginning to affect device performance Gate Source
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 2017 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2017 Khanna Lecture Outline! Semiconductor Physics " Band gaps "
More informationTri-Gate Fully-Depleted CMOS Transistors: Fabrication, Design and Layout
Tri-Gate Fully-Depleted CMOS Transistors: Fabrication, Design and Layout B.Doyle, J.Kavalieros, T. Linton, R.Rios B.Boyanov, S.Datta, M. Doczy, S.Hareland, B. Jin, R.Chau Logic Technology Development Intel
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationAnalytical Modeling of Threshold Voltage for a. Biaxial Strained-Si-MOSFET
Contemporary Engineering Sciences, Vol. 4, 2011, no. 6, 249 258 Analytical Modeling of Threshold Voltage for a Biaxial Strained-Si-MOSFET Amit Chaudhry Faculty of University Institute of Engineering and
More informationLecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007
More informationInAs/GaSb Mid-Wave Cascaded Superlattice Light Emitting Diodes
InAs/GaSb Mid-Wave Cascaded Superlattice Light Emitting Diodes John Prineas Department of Physics and Astronomy, University of Iowa May 3, 206 Collaborator: Thomas Boggess Grad Students: Yigit Aytak Cassandra
More informationTypical example of the FET: MEtal Semiconductor FET (MESFET)
Typical example of the FET: MEtal Semiconductor FET (MESFET) Conducting channel (RED) is made of highly doped material. The electron concentration in the channel n = the donor impurity concentration N
More informationR. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6
R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence
More informationMSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University
MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
More informationPhysics of Semiconductors
Physics of Semiconductors 9 th 2016.6.13 Shingo Katsumoto Department of Physics and Institute for Solid State Physics University of Tokyo Site for uploading answer sheet Outline today Answer to the question
More informationLecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure
Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with
More informationNanoscale CMOS Design Issues
Nanoscale CMOS Design Issues Jaydeep P. Kulkarni Assistant Professor, ECE Department The University of Texas at Austin jaydeep@austin.utexas.edu Fall, 2017, VLSI-1 Class Transistor I-V Review Agenda Non-ideal
More informationA Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors
A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors Jing Guo, Supriyo Datta and Mark Lundstrom School of Electrical and Computer Engineering, Purdue University, West Lafayette,
More informationPerformance Enhancement of P-channel InGaAs Quantum-well FETs by Superposition of Process-induced Uniaxial Strain and Epitaxially-grown Biaxial Strain
Performance Enhancement of P-channel InGaAs Quantum-well FETs by Superposition of Process-induced Uniaxial Strain and Epitaxially-grown Biaxial Strain Ling Xia 1, Vadim Tokranov 2, Serge R. Oktyabrsky
More informationLecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
More information8.1 Drift diffusion model
8.1 Drift diffusion model Advanced theory 1 Basic Semiconductor Equations The fundamentals of semiconductor physic are well described by tools of quantum mechanic. This point of view gives us a model of
More informationDevice Models (PN Diode, MOSFET )
Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed
More informationNanoelectronics. Topics
Nanoelectronics Topics Moore s Law Inorganic nanoelectronic devices Resonant tunneling Quantum dots Single electron transistors Motivation for molecular electronics The review article Overview of Nanoelectronic
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature15387 S1. ADVANTAGES OF D MATERIALS for ULTRA SHORT-CHANNEL FIELD-EFFECT TRANSISTORS In a field-effect-transistor (Fig. S1(a)), current flows through a semiconducting
More information! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 9, 019 MOS Transistor Theory, MOS Model Lecture Outline CMOS Process Enhancements Semiconductor Physics Band gaps Field Effects
More informationSolid State Device Fundamentals
Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 Outline - Goals of the course. What is electronic device?
More informationMOS Transistor Theory MOSFET Symbols Current Characteristics of MOSFET. MOS Symbols and Characteristics. nmos Enhancement Transistor
MOS Transistor Theory MOSFET Symbols Current Characteristics of MOSFET Calculation of t and Important 2 nd Order Effects SmallSignal Signal MOSFET Model Summary Material from: CMOS LSI Design By Weste
More informationCarbon Nanotube Electronics
Carbon Nanotube Electronics Jeorg Appenzeller, Phaedon Avouris, Vincent Derycke, Stefan Heinz, Richard Martel, Marko Radosavljevic, Jerry Tersoff, Shalom Wind H.-S. Philip Wong hspwong@us.ibm.com IBM T.J.
More informationmetal-oxide-semiconductor field-effect tunneling
Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling Siyuranga O. Koswatta,,* Mark S. Lundstrom, and Dmitri E. Nikonov
More informationFundamentals of the Metal Oxide Semiconductor Field-Effect Transistor
Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the
More information