High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs

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1 High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs Prof. (Dr.) Tejas Krishnamohan Department of Electrical Engineering Stanford University, CA & Intel Corporation Santa Clara, CA

2 Outline Need for high mobility channel Bulk Ge PMOS Strain Quantization Heterostructure Schottky S-D NMOS Summary 2

3 High Mobility Channel Impact On Device Performance N source Injected (v inj ) Back scattered (r) Source I sat qn Source v inj 1 r 1 r Low m* transport High inj Low r Drain inj low field mobility Increasing brings us closer to the ballistic limit 3

4 Motivating Focus for High-µ Channel Historical CMOS Performance vs. Scaling: The 1/L G law But, carrier velocity increase has saturated with scaling MOSFET delay has continued to decrease by use of Si strain to boost velocity and, velocity boosting will also saturate with strain-based Si band engineering Courtesy: D. Antoniadis (MIT) Carrier velocity increase is paramount for performance scaling 20x High-µ channel: Getting there (L G ~10nm) and proceeding beyond Injection velocity (cm/s) Electrons Holes High µ Channel Length (nm) Strained Si Si 4

5 Picking the Right High-µ Material Material Property Si Ge GaAs InAs InSb Electron mobility Hole mobility Bandgap (ev) Dielectric constant Why Ge? More symmetric and higher carrier mobilities Highest hole mobility Easier integration on Si Lower temperature processing 5

6 Problems With Ge and Solutions Problem #1: Surface Passivation Solutions: GeON, high-dielectrics Problem #2: Low bandgap higher leakage Solutions: Innovative channel and device structures, e.g., Si/Ge Heterostructures, strain Problem #3: Parasitic resistance Solutions: Schottky (Metal) S-D 6

7 Al Ge Passivation by GeO x N y P-Ge SiO 2 GeON Ge N-Ge GeON growth by RTP in NH 3 LPCVD SiO 2 deposition Minimal hysterisis < 30 mv Midgap D it of /cm 2 -ev Excellent for CMOS isolation Need reduction for gate Pethe et al, IEEE SISC, Dec

8 Electrical characteristics - GeO x N y PMOS NMOS Good PMOS and NMOS characteristics 2.2X mobility enhancement in p-type High electron mobility 8

9 High Mobility Materials Effective mass vs. Bandgap Small m*, Small Eg Strain vs. Bandgap Bandgap strain ( Fischetti et al, JAP 1996 ) Smaller Effective Mass and Smaller Bandgap Larger BTBT and Larger Off State Current. Krishnamohan et al., IEEE TED May 2006 (Invited) 9

10 High Mobility Channel Impact On Device Performance Power Density (W/cm 2 ) 1000 N Injected (v inj ) source Active Back scattered (r) Power Source I sat qn Source v inj 1 r 1 r Low m* transport Advantages High inj Active Power Drain Passive Power Low r 1994 Courtesy: Ed2004 Nowak (IBM) Increasing brings us closer to Leakage currents may 0.01 hinder the ballistic limit scalability Disadvantages Valance band Conduction band Low E g High Leakage Currents Low m* High Tunneling Leakage Low Density of States High High subthreshold slope Gate Length (µm) Passive Power 10

11 New Structures and Materials for Nanoscale MOSFETs S Gate High µ channel D Log (I (I DS ) I on Gate High-K dielectric BTBT I off,min Double Gate - Better electrostatics - Minimize OFF-state drain-source leakage High Mobility Channel - High drive current and low intrinsic delay High-K dielectrics - Reduced gate leakage 0 High I ON + Low I OFF Vg 11

12 BTBT Modeling Our model captures Band structure information All Possible Transitions between bands (Full Band) Energy Quantization Quantized Density of States Kim, Krishnamohan, and Saraswat, IEEE DRC,

13 BTBT Modeling Can simulate the BTBT current for different materials. Matched with available experimental data. 13

14 Quantization Effects Thick Body DGFET Oxide Channel Oxide Eg S G High mobility - Small Eg BTBT Ψ h Ψ e T body ΔE Large Tunneling Rate D Eg Thin Body DGFET Oxide ΔE Large Tunneling Barrier Strong Quantization Tunnel Barrier > Eg S Ψh G Small Tunneling Rate Quantization - Large Eg BTBT D Ψ e Eg T body Thin Body Increases Tunneling Barrier Height. Lower BTBT. Krishnamohan et al., VLSI Symposium

15 Effect of Quantization on Valleys in Ge <100> Ge Band Structure Conduction Band Valence Band E ГValley Split off ΔE Г Light L Valley <111> ΔE L k Heavy holes Body Thickness vs Quantization Ge PMOS Energy Level(eV) (ev) ΔE Г ΔE L E E L T body (nm) T body (nm) Energy Quantization of Г> > Energy Quantization of L In Ge -valley leakage is strongly suppressed with ultra-thin thin body Kim, Krishnamohan, Nishi and Saraswat, IEEE SISPAD,

16 Biaxial strained Si and Ge PMOS Strain modifies the band structure and directly affects the leakage properties of the device. Lowest leakage obtained for ~50% strained-ge Krishnamohan et al., SSDM

17 Biaxial strained Si and Ge PMOS I ON I OFF Compressive Tensile Compressive Tensile (%) L G =16nm, T body = 5nm, T ox = 0.9nm, V dd =0.7V Optimal Performance Tradeoff: - Biaxial Compressively Strained (2-3%) Germanium Krishnamohan et al., IEEE IEDM 07 17

18 Uniaxial strained Si and Ge PMOS I ON I OFF Compressive Tensile Compressive Optimal Performance Tradeoff: - Uniaxial Compressively Strained Ge (<3GPa) <100> - Uniaxial Compressively Strained (>3GPa) Si <110> Krishnamohan et al., IEEE IEDM 07 Tensile 18

19 Strained-Ge Heterostructure SOI PMOS Transport in high µ Ge High I on TEM Eg due to quantization in Ge thin film Low leakage High E-field in wide bandgap Si Low E-field in Ge Low leakage Krishnamohan, Krivokapic, Uchida, Nishi and Saraswat, IEEE TED, May 2006 (Invited) 19

20 Strained-Ge Heterostructure SOI PMOS Mobility I d -V g HFET on Bulk HFET on SOI HFET on Bulk Si Si HFET on SOI 4X improvement over Si due to: Strain in Ge Reduced scattering due to Reduced E-fieldE in Ge Channel away from the interface Low BTBT leakage: Eg due to quantization in Ge thin film Reduced E-field in Ge Krishnamohan, Krivokapic, Uchida, Nishi and Saraswat, IEEE TED, May

21 Ge/Si PMOS Ultimate Performance Comparison Structures Monomaterial Heterostructure-FET Power-Performance L G =16nm, T S = 5nm, V dd =0.7V Materials: Relexed Si (r-si), Strained Si (s-si), Relaxed-Ge (r-ge), Strained-Ge (s-ge), Strained-SiGe (s-sige) Terminology (x,y) for channel material x = Ge content in the channel material and y = Ge content in an imaginary relaxed (r) substrate to which the channel is strained (s) Krishnamohan, Jungemann, Kim, Nishi and Saraswat, VLSI Symp. June

22 SEMATECH Results on Strained Quantum Wells vs Relaxed Ge Channel p-mosp Ge Si-Ge QW Si Source: Prashant Majhi SEMATECH/Intel 22

23 Schottky S-D heterostructure LTO p+ SiGe Ge Ni-S n-si Ni-D 2nm Ge Good ohmic S-D contacts and low parasitic resistance. Advantages of heterostructure (low leakage high mobility). 23

24 Ge NMOS A new full conductance method measured at low T to measure Dit Measurement of Dit in Ge: Weak inversion response Smaller interface trap time constant In collaboration with IMEC Interface state density looks asymmetric from initial measurements. Skewed to conduction band Can severely degrade the electron mobility 24

25 High Mobility III-V V Channel NMOS? Weakly quantized Strongly quantized Main advantage of a semiconductor with a small transport mass is its high injection velocity. T body ΔEg T body ΔEg Charge Quantization BUT Low DOS > > ChargeC transfer to valleys in L and X Small Eg > > High BTBT leakage Higher-k > > Worse Short Channel Effects L Γ X quantization We have investigated and benchmarked Double-Gate n-mosfets with different channel materials (GaAs, InAs, InSb,, Ge, Si) taking into account band structure, quantum effects, BTBT and short-channel effects. 25

26 Off Current: Band Engineering V DD Dependence (T body body =5nm) T body Dependence (V (V DD DD =0.9V) ssi InAs sge Ge InAs ssi sge Ge Si GaAs Si GaAs Small V DD DD : Over 100x Reduction in BTBT. Large bandgap : large reduction Small bandgap : small reduction Thin body : Small BTBT T due to energy ergy quantization Small bandgap materials : large BTBT Quantization depends on mass Kim, Krishnamohan, Nishi and Saraswat, IEEE SISPAD,

27 NMOS Drive Currents (Ballistic) V DD Effect Body Thickness Effect T body =5nm V DD =1V T OX T body (nm) OX = 1nm,, L G = 15nm, I OFF = 0.1μA/ A/μm I ON for III-V V materials is similar to Ge For low T body charge spills into L and X.. Low I ON Innovative device structures needed to improve I ON Pethe, Krishnamohan, Kim, Wong, Nishi and Saraswat, IEEE IEDM,

28 Summary Bulk Germanium Surface passivation of Ge demonstrated High mobility bulk Ge PMOS demonstrated NMOS results are very encouraging but still needs improvement I off may limit scalability of very µ materials like Ge, and III-V Innovative device structures will be needed to exploit excellent transport properties of High-µ and Small-E G materials. Strained-Germanium Heterostructures Ultra-thin strained-ge quantum well devices fabricated on UT-SOI High I on and low I off PMOS demonstrated in Si/Ge heterostructure Demonstrated metal S-DS heterostructure s-ge FETs with low parasitic resistance BTBT tunneling model developed and caliberated with experimental data. III-V MOSFETs I off may limit scalability of very µ materials like Ge, InAs and InSb. I ON in most III-V materials dominated by transport in L-valley under quantization advantages of low transport mass diminished. Innovative device structures will be needed to exploit excellent transport properties of High-µ and Small-E G materials. 28

29 Acknowledgements Funding: MARCO, DARPA, NSF, Intel, Stanford INMP Collaborations: Prof. Krishna Saraswat Prof. Yoshio Nishi Prof. Paul McIntyre Prof. Philip Wong Prof. Christoph Jungemann Students: Abhijit Pethe Duygu Kuzum Donghyun Kim Koen Martens (IMEC) 29

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