Junction Field Effect Transistor (JFET): Idea
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- Elinor Booth
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1 Junction Field Effect Transistor (JFET): Idea G controls the channel width G control I d 3
2 JFET: I- I characteristics Pinch-off After pinch-off: I D f( D ); I D = f( G ) - current source 4
3 JFET: I- I characteristics (a) S Linear region N-channel N + N + G P + -substrate I D DS D =0 > T, 0< DS < DSsat (triode region) (c) 6 =0 B (b) q DS channel E C E F I D (ma) 2 0 Q E DS () 5
4 JFET: I- I characteristics (a) Saturation region S N-channel G N + N + G I D DS D =0 > T, DS > DSsat (saturation region) P + -substrate (b) B G (c) 6 Q = channel q Dsat DSsat depletion layer channel pinch-off point I D (ma) 2 DSsat q DS q D DS () E C E F 6 E
5 JFET Equations N-channel Id > 0; p < 0; ds > 0 ; Idss >0 P-channel Id < 0; p >0; ds <0; Idss < 0 Output characteristics Transfer P-channel??? Dispositivos Semiconductores
6 Dispositivos Semiconductores
7 G S D 2N5457 2N5458 2N5459 TO-92 Discrete POWER & Signal Technologies MMBF5457 MMBF5458 MMBF5459 Amplificador de canal N de propósito general Este dispositivo consiste en un amplificador de audio de bajo nivel y transistores de conmutación. Se puede utilizar para aplicaciones análogas de conmutación. Fuente obtenida de Process 55. Especificaciones máximas absolutas* TA = 25 C si no hay contraindicación Símbolo Parámetro alor Unidades DG Tensión drenaje-compuerta 25 Tensión compuerta-fuente -25 I GF Corriente de compuerta directa 10 ma T J, T stg Margen de temperaturas de la conexión de funcionamiento y de almacenamiento -55 a +150 C G SOT-23 Marca: 6D / 61S / 6L S D 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 *Estos valores son limitados y sobrepasarlos puede afectar a la capacidad de servicio de cualquier dispositivo semiconductor. NOTAS: 1) Estos valores límite se basan en una temperatura máxima de unión de 150 grados centígrados. 2) Estos límites son de régimen permanente. Se debería consultar a la fábrica acerca de las aplicaciones que implican funcionamientos pulsados o ciclos de utilización reducidos. Características térmicas TA = 25 C si no hay contraindicación Símbolo Característica Máx. Unidades 2N5457 *MMBF5457 P D Disipación total del dispositivo Degradación por encima de 25 C 625 5, ,8 mw mw / C R θjc Resistencia térmica, conexión a caja 83,3 C/W R θja Resistencia térmica, conexión a ambiente C/W *Dispositivo montado sobre FR-4 PCB 1,6" X 1,6" X 0,06." ã 1997 Fairchild Semiconductor Corporation
8 Características eléctricas CARACTERÍSTICAS DE DESCONEXIÓN TA = 25 C si no hay contraindicación Símbolo Parámetro Condiciones de la prueba Mín. Tipo Máx. Unidades (BR)GSS Tensión de ruptura compuerta-fuente I G = 10 µa, DS = 0-25 I GSS Corriente inversa de compuerta = -15, DS = 0 = -15, DS = 0, T A = 100 C (off) Tensión de corte compuerta-fuente DS = 15, I D = 10 na 2N5457 2N5458 2N5459 Tensión compuerta-fuente DS = 15, I D = 100 µa 2N5457 DS = 15, I D = 200 µa 2N5458 DS = 15, I D = 400 µa 2N5459 CARACTERÍSTICAS DE CONEXIÓN I DSS Corriente de drenaje de tensión DS = 15, = 0 2N5457 de compuerta nula* 2N5458 2N5459 CARACTERÍSTICAS DE PEQUEÑA SEÑAL - 0,5-1,0-2,0 1,0 2,0 4,0-2,5-3,5-4,5 3,0 6,0 9,0-1, ,0-7,0-8,0 g fs Conductancia de transferencia directa* DS = 15, = 0, f = 1,0 khz 2N5457 2N5458 2N µmhos µmhos µmhos g os Conductancia de salida* DS = 15, = 0, f = 1.0 khz µmhos C iss Capacitancia de entrada DS = 15, = 0, f = 1.0 MHz 4,5 7,0 pf C rss Capacitancia de transferencia inversa DS = 15, = 0, f = 1.0 MHz 1,5 3,0 pf NF Figura de ruido DS = 15, = 0, f = 1.0 khz, R G = 1.0 megohm, BW = 1.0 Hz 3,0 db *Prueba de impulsos: anchura entre impulsos 300 ms, ciclo de funcionamiento 2% Características típicas Amplificador de canal N de propósito general (continuación) 5,0 9,0 16 na na ma ma ma 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Características de transferencia Características de transferencia NOTA: Drain current (corriente de drenaje); gate-source voltage (tensión compuerta-fuente)
9 Características típicas (continuación) Características de transferencia NOTA: Transconductance (transconductancia); Gate-source voltage (tensión compuerta-fuente). Drenaje-fuente común Amplificador de canal N de propósito general (continuación) Características de transferencia Interacción de parámetros 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 NOTA: Drain current (corriente de ganancia); drain saturation current (corriente de saturación de drenaje); gate cutoff voltage (tensión de corte de drenaje); drain-source voltage (tensión drenaje-fuente). Conductancia de salida frente a corriente de drenaje Transconductancia frente a corriente de drenaje NOTA: Output conductance (conductancia de salida); drain current (corriente de drenaje); transconductance (transconductancia).
10 Características típicas (continuación) Resistencia de canal frente a temperatura Corriente de fuga frente a tensión Amplificador de canal N de propósito general (continuación) Tensión de ruido frente a frecuencia NOTA: Drain on resistance (resistencia de conexión de drenaje); ambient temperature (temperatura ambiente); noise voltage (tensión de ruido); frequency (frecuencia). Capacitancia frente a tensión 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 NOTA: Gate leackage current (corriente de fuga de compuerta); drain-gate voltage (tensión drenaje-compuerta); capacitance (capacitancia); gate-source voltage (tensión compuerta-fuente).
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