N-Channel Lateral DMOS FETs

Size: px
Start display at page:

Download "N-Channel Lateral DMOS FETs"

Transcription

1 N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) SDDE-/DE- Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) V GS = V. V GS = V. Ultra-High Speed Switching t ON : ns Ultra-Low Reverse Capacitance:. pf Low Guaranteed r V Low Turn-On Threshold Voltage N-Channel Enhancement Mode High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver The SDDE-/DE- are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SDDE- is normally used for -V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. The SDDE/DE are available only in the extended hi-rel flow. The flow complies with the requirements of MIL-PRF-9 for JANTX discrete devices. For similar products see: quad array SDI-, and Zener protected SDDE-/DE-/DE-. TO-6AF (TO-7) S Body Substrate (Case) D G Top View Gate-Drain, Gate-Source Voltage V Gate-Substrate Voltage V Drain-Source Voltage SDDE V SDDE-) V Source-Drain Voltage SDDE- V SDDE- V Drain-Substrate Voltage SDDE- V SDDE- V Source-Substrate Voltage SDDE- V SDDE- V Drain Current ma Lead Temperature ( / 6 from case for seconds) C Storage Temperature to C Operating Junction Temperature to C Power Dissipation a mw Notes: a. Derate mw/ C above C Applications Information See Applications Note AN Document Number: 79 S-889 Rev. E, -Dec-

2 SDDE-/DE- Limits SDDE- SDDE- Parameter Symbol b Test Conditions b Typ c Min Max Min Max Unit Static V GS = V BS = V, I D = A Drain-Source Breakdown Voltage V (BR)DS V GS = V BS = V, I D = na Source-Drain Breakdown Voltage V (BR)SD V GD = V BD = V, I S = na Drain-Substrate Breakdown Voltage V (BR)DBO V GB = V, I D = na, Source Open V Source-Substrate Breakdown Voltage V (BR)SBO V GB = V, I S = A, Drain Open Drain-Source Leakage I DS(off) V GS = V BS = V Source-Drain Leakage I SD(off) V GD = V BD = V V DS = V. V DS = V.9 V SD = V. na V SD = V.8 Gate Leakage I GBS V DB = V SB = V, V GB = V... Threshold Voltage V GS(th) V DS = V GS, I D = A, V SB = V V V GS = V V Drain-Source On-Resistance r SB = V DS(on) I D = ma V GS = V 8 V GS = V V GS = V 6 V GS = V Dynamic Forward Transconductance g fs g os V DS = V, V SB = V, I D = ma f = khz.9 ms Gate Node Capacitance C (GS+GD+GB)... Drain Node Capacitance C (GD+DB) V DS = V, f = MHz... Source Node Capacitance C (GS+SB) V GS = V BS = V.7.. pf Reverse Transfer Capacitance C rss... Switching Turn-On Time Turn-Off Time t d(on). t r VSB V = V, V IN to V, R G =.6 t d(off) V DD = V, R L = 68 t f 6 ns Notes: a. unless otherwise noted. DMCBB b. B is is the body (substrate) and V (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Document Number: 79 S-889 Rev. E, -Dec-

3 SDDE-/DE- rds(on) Drain-Source On-Resistance ( ) 8 6 On-Resistance vs. Gate-Source Voltage V GS = V V V Leakage na na pa pa Leakage Current vs. Applied Voltage ID VGS = VBG = V VGD = VBD = V VGB = V, Drain Open I S(off) I SBO I GSS (Diode) I D(off) 8 6 V SB Source-Body Voltage (V) pa 8 6 Applied Voltage (V) ( ) rds(on) Drain-Source On-Resistance ( ) R L On-Resistance vs. Temperature I D = ma, V BS = V V GS = V V V V 6 6 Switching Characteristics 6 7 gfs Forward Transconductance V GS(th) Gate-Source Threshold Voltage (V) 6 8 Common-Source Forward Transconductance vs. Drain Current V DS = V V BS = V T A = C C C I D Drain Current (ma) Threshold Voltage vs. Temperature V GS = V DS = V TH I D = ma V BS = V V V V. V 6 6 t f Fall Time (ns) Document Number: 79 S-889 Rev. E, -Dec-

4 SDDE-/DE- V GS(th) Gate-Source Threshold Voltage (V) Threshold Voltage vs. Substrate-Source Voltage V GS = V DS = V TH I D = A H L Leakage (na) Leakage Current vs. Temperature I V GS = V BS = V, V DS = V I V GD = V BD = V, V SD = V I V GS = V I V SB = V Drain Open I GSS (Diode) I S(off) I D(off) I SBO V BS Body-Source Voltage (V) 8 Capacitance vs. Gate-Source Voltage V DS = V, f = MHz V GS = V BS A A A Body Leakage Current vs. Drain-Body Voltage I D = ma Capacitance (pf) 6 C (GS+SB) C (GS+GD+GB) C (GD+DB) Body Leakage I B na na na pa pa ma C (DG) 8 6 pa 8 6 V GS Gate-Source Voltage (V) V DB Drain-Body Voltage (V) V DS = V I D = ma Input Admittance V DS = V I D = ma Forward Admittance g fs b is g is b fs.. Document Number: 79 S-889 Rev. E, -Dec-

5 SDDE-/DE- V DS = V I D = ma Reverse Admittance V DS = V I D = ma Output Admittance 9 b rs. +g rg b og. g rg g og.. V BS = V Output Characteristics. Output Conductance vs. Drain Current V BS = V f = khz Drain Current (ma) I D V GS = V V V V gos Output Conductance V V V DS = V V DS Drain-Source Voltage (V) I D Drain Current (ma) To Scope +V DD + V R L V OUT To Scope V IN V % V IN Input pulse: td, tr < ns Pulse width: ns Rep rate: MHz t d(on) t d(off) Sampling Scope tr < 6 ps RIN = M CIN = pf BW = MHz +V DD V OUT V t r % % t f 9% Document Number: 79 S-889 Rev. E, -Dec-

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) SDDE-/DE- Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SDDE-.5

More information

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs N-Channel Lateral DMOS FETs SDCY/SDCY Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDCY. 7 @ V GS = V. SDCY. 7 @ V GS = V. Quad SPST Switch with Zener Input

More information

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SDDE-.5 5 @ V GS

More information

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SD3DE-.5 5 @ V

More information

N- & P-Channel Enhancement Mode Field Effect Transistor

N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel

More information

DATA SHEET. BSD22 MOSFET N-channel depletion switching transistor DISCRETE SEMICONDUCTORS

DATA SHEET. BSD22 MOSFET N-channel depletion switching transistor DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET MOSFET N-channel depletion switching transistor File under Discrete Semiconductors, SC07 December 1997 DESCRIPTION Marking code: M32 Symmetrical insulated-gate silicon

More information

J/SST111 Series. N-Channel JFETs. Vishay Siliconix J111 SST111 J112 SST112 J113 SST113

J/SST111 Series. N-Channel JFETs. Vishay Siliconix J111 SST111 J112 SST112 J113 SST113 N-Channel JFETs J SST J SST J SST Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) J/SST to 5 4 J/SST to 5 5 5 4 J/SST 5 4 Low On-Resistance: < Fast Switching t ON : 4 ns Low

More information

Matched N-Channel JFET Pairs

Matched N-Channel JFET Pairs Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Matched N-Channel JFET Pairs

Matched N-Channel JFET Pairs Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip

More information

2N5545/46/47/JANTX/JANTXV

2N5545/46/47/JANTX/JANTXV N//7/JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv) N. to.. N. to.. N7. to.. Features Benefits Applications

More information

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD. Small Signal MOSFET V, 38 ma, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate Pb-Free Package is Available ESD Protected:V

More information

Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J

Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

BSS123. Rev K/W. R thja

BSS123. Rev K/W. R thja Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25

More information

SIPMOS Small-Signal Transistor BSP 149

SIPMOS Small-Signal Transistor BSP 149 SIPMOS Small-Signal Transistor DS 200 I D 0.48 A R DS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in GS(th) Type Ordering Tape and Reel Information Pin Configuration Marking

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely

More information

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

More information

PDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET

PDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET N-Channel and P-Channel,2V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D1 G2 S2 MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A).3@

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

AON4605 Complementary Enhancement Mode Field Effect Transistor

AON4605 Complementary Enhancement Mode Field Effect Transistor AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form

More information

Monolithic N-Channel JFET Dual

Monolithic N-Channel JFET Dual N9 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise:

More information

SPN01N60C3. Cool MOS Power Transistor V T jmax 650 V

SPN01N60C3. Cool MOS Power Transistor V T jmax 650 V SPNN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing

More information

2N4856JAN/JANTX/JANTXV Series. N-Channel JFETs. Vishay Siliconix

2N4856JAN/JANTX/JANTXV Series. N-Channel JFETs. Vishay Siliconix N-Channel JFETs 2N4856JAN 2N4856JANTX 2N4856JANTX 2N4857JAN 2N4857JANTX 2N4857JANTX 2N4858JAN 2N4858JANTX 2N4858JANTX 2N4859JAN 2N4859JANTX 2N4859JANTX 2N4860JAN 2N4860JANTX 2N4860JANTX 2N4861JAN 2N4861JANTX

More information

Preliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -

Preliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 - SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package

More information

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs Dual N-/Dual P-Channel 3-V (D-S) MOSFETs V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) N-Channel 3 @ V GS = 2 V.8 to 2.5.85 P-Channel 3 2 @ V GS = 2 V 2 to 4.5.6 Low On-Resistance:.8/.6 Low Threshold:.5/

More information

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D. SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I

More information

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MX.) ID D 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPUN6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved

More information

Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 0.68.

Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 0.68. SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Gate pin1 Product Summary V DS 1 V R DS(on) 6 Ω I D.17 Drain pin 3 Source pin 2 PG-SOT23 3 1 2 VPS5161 Type Package

More information

Type V DS I D R DS(on) Package Ordering Code BTS V 10 A 0.2 Ω TO-220AB C67078-A5008-A2

Type V DS I D R DS(on) Package Ordering Code BTS V 10 A 0.2 Ω TO-220AB C67078-A5008-A2 TEMPFET Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 2 3 G D S Type V DS I D R DS(on) Package Ordering

More information

Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.

Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90. SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5

More information

SSF7NS65UF 650V N-Channel MOSFET

SSF7NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche

More information

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)

More information

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Description xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPP24N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated

More information

N-Channel Enhancement-Mode Vertical DMOS FET

N-Channel Enhancement-Mode Vertical DMOS FET N-Channel Enhancement-Mode Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

OptiMOS Power-Transistor

OptiMOS Power-Transistor OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

TO-247-3L Inner Circuit Product Summary I C) R DS(on)

TO-247-3L Inner Circuit Product Summary I C) R DS(on) Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness

More information

N-Channel 30-V (D-S) MOSFET With Sense Terminal

N-Channel 30-V (D-S) MOSFET With Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

OptiMOS 3 Power-MOSFET

OptiMOS 3 Power-MOSFET BSB14N8NP3 G OptiMOS 3 Power-MOSFET Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Low profile (

More information

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary

More information

AO4620 Complementary Enhancement Mode Field Effect Transistor

AO4620 Complementary Enhancement Mode Field Effect Transistor AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

BSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101

BSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101 OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39

More information

OptiMOS 3 M-Series Power-MOSFET

OptiMOS 3 M-Series Power-MOSFET BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R

More information

Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current Cool MOS Power Transistor Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

OptiMOS Power-Transistor

OptiMOS Power-Transistor IPB8N6S2L-11 IPP8N6S2L-11, IPI8N6S2L-11 OptiMOS Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow Product Summary V DS 55 V R DS(on),max

More information

OptiMOS &!Power-Transistor

OptiMOS &!Power-Transistor OptiMOS &!Power-Transistor Feature % N-Channel % Enhancement mode % Logic Level % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance %!175 C operating temperature

More information

AOT404 N-Channel Enhancement Mode Field Effect Transistor

AOT404 N-Channel Enhancement Mode Field Effect Transistor AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

Type Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N

Type Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on)

More information

Preliminary data. Type Package Ordering Code Tape and Reel Information BSP 317 P SOT-223 Q67042-S4167 -

Preliminary data. Type Package Ordering Code Tape and Reel Information BSP 317 P SOT-223 Q67042-S4167 - SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -5 V R DS(on) 4 Ω I D -.43 Drain pin /4 Source pin 3 SOT-3 4 3 VPS563 Type Package

More information

OptiMOS TM Power-MOSFET

OptiMOS TM Power-MOSFET BSC1NE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance N-channel Qualified

More information

Monolithic N-Channel JFET Duals

Monolithic N-Channel JFET Duals Monolithic N-Channel JFET Duals N96/97/98/99 Part Number V GS(off) (V) V (BR)GSS Min (V) Min (ms) I G Max (pa) V GS V GS Max (mv) N96.7 to N97.7 to N98.7 to N99.7 to Monolithic Design High Slew Rate Low

More information

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Product Summary V DS 8 V R DS(on).5 Ω I D P-TO7 Type Package

More information

AOP606 Complementary Enhancement Mode Field Effect Transistor

AOP606 Complementary Enhancement Mode Field Effect Transistor AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

IXFN56N90P. = 900V = 56A 145m 300ns. Polar TM HiPerFET TM Power MOSFET V DSS I D25. R DS(on) t rr

IXFN56N90P. = 900V = 56A 145m 300ns. Polar TM HiPerFET TM Power MOSFET V DSS I D25. R DS(on) t rr Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S I D25 R DS(on) t rr = 9V = 56A 145m ns Symbol Test Conditions Maximum Ratings S = 25 C to 1 C 9 V

More information

OptiMOS 3 M-Series Power-MOSFET

OptiMOS 3 M-Series Power-MOSFET BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS

More information

OptiMOS 3 M-Series Power-MOSFET

OptiMOS 3 M-Series Power-MOSFET BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R

More information

IXTH3N150 V DSS. High Voltage Power MOSFET = 1500V I D25 = 3A 7.3. R DS(on) N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode TO-247

IXTH3N150 V DSS. High Voltage Power MOSFET = 1500V I D25 = 3A 7.3. R DS(on) N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode TO-247 High Voltage Power MOSFET S = 5V I D5 = 3A R DS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-7 Symbol Test Conditions Maximum Ratings S = 5 C to 5 C 5 V V DGR = 5 C to 5 C,

More information

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode CCS5M2CM2.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation

More information

OptiMOS TM Power-MOSFET

OptiMOS TM Power-MOSFET BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (

More information

OptiMOS TM Power-MOSFET

OptiMOS TM Power-MOSFET OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications

More information

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage

More information

AO V Dual P + N-Channel MOSFET

AO V Dual P + N-Channel MOSFET 4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters

More information

CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode CCS5M2CM2.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPU7N6S5 SPD7N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 Ultra low gate charge Periodic avalanche rated Extreme dv/dt

More information

OptiMOS TM Power-MOSFET

OptiMOS TM Power-MOSFET BSC18NE2LSI OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested N-channel

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target

More information

SPN03N60C3. Cool MOS Power Transistor V T jmax 650 V

SPN03N60C3. Cool MOS Power Transistor V T jmax 650 V SPNN6C Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances R DS(on). Ω I D.7 A SOT-

More information

Rev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.

Rev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape

More information

BSO604NS2 OptiMOS Power-Transistor

BSO604NS2 OptiMOS Power-Transistor BSO6NS OptiMOS Power-Transistor Feature Dual N-Channel Enhancement mode Logic Level 5 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 35 mω I D 5 P-DSO-8-7 Type Package

More information

OptiMOS 3 Power-MOSFET

OptiMOS 3 Power-MOSFET OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max

More information

OptiMOS =Power-Transistor

OptiMOS =Power-Transistor SPB8N6SL-7 OptiMOS =Power-Transistor Features N-Channel Enhancement mode valanche rated Logic Level dv/dt rated =175 C operating temperature Product Summary Drain source voltage V DS 55 V Drain-source

More information

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode CCS5M12CM2 1.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits

More information

Preliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

Preliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current Cool MOS =Power Transistor Feature =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Ultra low effective capacitances SPW47N6C3 Product Summary

More information

PPM3T60V2 P-Channel MOSFET

PPM3T60V2 P-Channel MOSFET P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V

More information

SPB03N60S5. Cool MOS Power Transistor V DS 600 V

SPB03N60S5. Cool MOS Power Transistor V DS 600 V SPB3N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved

More information

IXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S

IXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S X2-Class Power MOSFET V DSS = 6V I D25 = A 38m R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C 6 V V DGR = 25 C to 1 C, R GS = 1M 6

More information

IXFR18N90P V DSS. Polar TM HiPerFET TM Power MOSFET = 900V I D25 = 10.5A. R DS(on) 300ns. t rr

IXFR18N90P V DSS. Polar TM HiPerFET TM Power MOSFET = 900V I D25 = 10.5A. R DS(on) 300ns. t rr Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S = 9V I D5 =.5A R DS(on) mω 3ns t rr Symbol Test Conditions Maximum Ratings S = 5 C to 15 C 9 V V DGR

More information

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 and Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX These and devices are military qualified up to a JANTX level for highreliability applications.

More information

OptiMOS 3 Power-MOSFET

OptiMOS 3 Power-MOSFET BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product

More information

Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.

Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (. V rated) C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 7 mω I D -. SOT-

More information

OptiMOS -5 Power-Transistor

OptiMOS -5 Power-Transistor OptiMOS -5 Power-Transistor Product Summary V DS 8 V R DS(on).2 m Features N-channel - Enhancement mode AEC qualified I D 3 A H-PSOF-8- Tab MSL up to 26 C peak reflow 75 C operating temperature Green product

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type BSC14N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target

More information

Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -2.

Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -2. OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 55 mω I D -.58

More information

OptiMOS TM Power-MOSFET

OptiMOS TM Power-MOSFET BSC16N6NS OptiMOS TM Power-MOSFET Features Optimized for synchronous rectification 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target applications Pb-free

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor Type BSS225 SIPMOS Small-Signal-Transistor Feature n-channel enhancement mode Logic level Product Summary 1) V DS 6 V R DS(on),max 45 Ω I D.9 A dv /dt rated Qualified according to AEC Q11 Halogen free

More information