128-Kb I 2 C CMOS Serial EEPROM

Size: px
Start display at page:

Download "128-Kb I 2 C CMOS Serial EEPROM"

Transcription

1 b I 2 MO rial EEPROM FEURE upports tandard and Fast I 2 Protocol 1.8V to 5.5V upply Voltag Rang 64-Byt Pag Writ Buffr Hardwar Writ Protction for ntir mmory chmitt riggrs and Nois upprssion Filtrs on I 2 Bus Inputs (L and D). Low powr MO tchnology DEVIE DERIPION h is a 128-b rial MO EEPROM, intrnally organizd as 16,384 words of 8 bits ach. It faturs a 64-byt pag writ buffr and supports both th tandard (100 khz) as wll as Fast (400 khz) I 2 protocol. Writ oprations can b inhibitd by taking th WP pin High (this protcts th ntir mmory). 1,000,000 program/ras cycls 100 yar data rtntion Industrial and Extndd tmpratur rang RoH-compliant 8-lad PDIP, OI, OP and UDFN packags For additional packags and Ordring Information dtails, s pag 15. PIN ONFIGURION FUNIONL YMBOL PDIP (L) OI (W) OP (Y) UDFN (HU3) V V WP L L V 4 5 D 2, 1, D For th location of Pin 1, plas consult th corrsponding packag drawing. WP PIN FUNION 0, 1, 2 Dvic ddrss Inputs D rial Data Input/Output L rial lock Input WP Writ Protct Input V V Powr upply Ground V * atalyst carris th I 2 protocol undr a licns from th Philips orporation ILL. ll rights rsrvd. haractristics subjct to chang without notic. 1 Doc. No. MD-1103, Rv. L

2 24128 BOLUE MXIMUM RING (1) torag mpratur Voltag on ny Pin with Rspct to Ground (2) -65 to V to +6.5 V RELIBILIY HRERII (3) ymbol Paramtr Min Units N (4) END Enduranc 1,000,000 Program/ Eras ycls DR Data Rtntion 100 Yars D.. OPERING HRERII V = 1.8 V to 5.5 V, = -40 to +125, unlss othrwis spcifid. ymbol Paramtr st onditions Min Max Units I R Rad urrnt Rad, f L = 400kHz 1 m I W Writ urrnt Writ, f L = 400kHz 3 m = -40 to I B tandby urrnt ll I/O Pins at GND or V = -40 to μ = -40 to I L I/O Pin Lakag Pin at GND or V = -40 to μ V IL Input Low Voltag -0.5 V x 0.3 V V IH Input High Voltag V x 0.7 V V V OL1 Output Low Voltag V < 2.5 V, I OL = 3.0m 0.4 V V OL2 Output Low Voltag V < 2.5 V, I OL = 1.0m 0.2 V PIN IMPEDNE HRERII V = 1.8 V to 5.5 V, = -40 to +125, unlss othrwis spcifid. ymbol Paramtr onditions Max Units IN (3) D I/O Pin apacitanc V IN = 0 V 8 pf IN (3) Input apacitanc (othr pins) V IN = 0 V 6 pf I WP (5) WP Input urrnt V IN < V IH 200 μ V IN > V IH 1 μ Not: (1) trsss abov thos listd undr bsolut Maximum Ratings may caus prmannt damag to th dvic. hs ar strss ratings only, and functional opration of th dvic at ths or any othr conditions outsid of thos listd in th oprational sctions of this spcification is not implid. Exposur to any absolut maximum rating for xtndd priods may affct dvic prformanc and rliability. (2) h D input voltag on any pin should not b lowr than -0.5 V or highr than V V. During transitions, th voltag on any pin may undrshoot to no lss than -1.5 V or ovrshoot to no mor than V V, for priods of lss than 20 ns. (3) hs paramtrs ar tstd initially and aftr a dsign or procss chang that affcts th paramtr according to appropriat E-Q100 and JEDE tst mthods. (4) Pag Mod, V = 5 V, 25 (5) Whn not drivn, th WP pin is pulld down to GND intrnally. For improvd nois immunity, th intrnal pull-down is rlativly strong; thrfor th xtrnal drivr must b abl to supply th pull-down currnt whn attmpting to driv th input HIGH. o consrv powr, as th input lvl xcds th trip point of th MO input buffr (~ 0.5 x V), th strong pull-down rvrts to a wak currnt sourc. Doc. No. MD-1103, Rv. L ILL. ll rights rsrvd. haractristics subjct to chang without notic.

3 HRERII (1) V = 1.8 V to 5.5 V, = -40 to tandard Fast ymbol Paramtr Min Max Min Max Units F L lock Frquncy khz t HD: R ondition Hold im μs t LOW Low Priod of L lock μs t HIGH High Priod of L lock μs t U: R ondition tup im μs t HD:D Data Hold im 0 0 μs t U:D Data tup im ns t R D and L Ris im ns t (2) F D and L Fall im ns t U:O OP ondition tup im μs t BUF Bus Fr im Btwn OP and R μs t L Low to D Data Out μs t DH Data Out Hold im ns (2) i Nois Puls Filtrd at L and D Inputs ns t U:WP WP tup im 0 0 μs t HD:WP WP Hold im μs t WR Writ ycl im 5 5 ms t (2, 3) PU Powr-up to Rady Mod 1 1 ms Not: (1) st conditions according to.. st onditions tabl. (2) std initially and aftr a dsign or procss chang that affcts this paramt. (3) t PU is th dlay btwn th tim V is stabl and th dvic is rady to accpt commands... E ONDIION Input Lvls Input Ris and Fall ims Input Rfrnc Lvls Output Rfrnc Lvls Output Load 0.2 x V to 0.8 x V 50 ns 0.3 x V, 0.7 x V 0.5 x V urrnt ourc: I OL = 3 m (V 2.5 V); I OL = 1 m (V < 2.5 V); L = 100 pf 2009 ILL. ll rights rsrvd. haractristics subjct to chang without notic. 3 Doc No. MD-1103, Rv. L

4 24128 POWER-ON REE (POR) h incorporats Powr-On Rst (POR) circuitry which protcts th dvic against powring up in th wrong stat. h will powr up into tandby mod aftr V xcds th POR triggr lvl and will powr down into Rst mod whn V drops blow th POR triggr lvl. his bi-dirctional POR fatur protcts th dvic against brown-out failur following a tmporary loss of powr. PIN DERIPION L: h rial lock input pin accpts th rial lock gnratd by th Mastr. D: h rial Data I/O pin rcivs input data and transmits data stord in EEPROM. In transmit mod, this pin is opn drain. Data is acquird on th positiv dg, and is dlivrd on th ngativ dg of L. 0, 1 and 2 : h ddrss pins accpt th dvic addrss. Whn not drivn, ths pins ar pulld LOW intrnally. WP: h Writ Protct input pin inhibits all writ oprations, whn pulld HIGH. Whn not drivn, this pin is pulld LOW intrnally. FUNIONL DERIPION h supports th Intr-Intgratd ircuit (I 2 ) Bus data transmission protocol, which dfins a dvic that snds data to th bus as a transmittr and a dvic rciving data as a rcivr. Data flow is controlld by a Mastr dvic, which gnrats th srial clock and all R and OP conditions. h acts as a lav dvic. Mastr and lav altrnat as ithr transmittr or rcivr. Up to 8 dvics may b connctd to th bus as dtrmind by th dvic addrss inputs 0, 1, and 2. I 2 BU PROOOL h I 2 bus consists of two wirs, L and D. h two wirs ar connctd to th V supply via pull-up rsistors. Mastr and lav dvics connct to th 2- wir bus via thir rspctiv L and D pins. h transmitting dvic pulls down th D lin to transmit a 0 and rlass it to transmit a 1. Data transfr may b initiatd only whn th bus is not busy (s.. haractristics). During data transfr, th D lin must rmain stabl whil th L lin is HIGH. n D transition whil L is HIGH will b intrprtd as a R or OP condition (Figur 1). h R condition prcds all commands. It consists of a HIGH to LOW transition on D whil L is HIGH. h R acts as a wak-up call to all rcivrs. bsnt a R, a lav will not rspond to commands. h OP condition complts all commands. It consists of a LOW to HIGH transition on D whil L is HIGH. Dvic ddrssing h Mastr initiats data transfr by crating a R condition on th bus. h Mastr thn broadcasts an 8-bit srial lav addrss. h first 4 bits of th lav addrss ar st to 1010, for normal Rad/Writ oprations (Figur 2). h nxt 3 bits, 2, 1 and 0, slct on of 8 possibl lav dvics and must match th stat of th xtrnal addrss pins. h last bit, R/W, spcifis whthr a Rad (1) or Writ (0) opration is to b prformd. cknowldg ftr procssing th lav addrss, th lav rsponds with an acknowldg () by pulling down th D lin during th 9 th clock cycl (Figur 3). h lav will also acknowldg all addrss byts and vry data byt prsntd in Writ mod. In Rad mod th lav shifts out a data byt, and thn rlass th D lin during th 9 th clock cycl. s long as th Mastr acknowldgs th data, th lav will continu transmitting. h Mastr trminats th sssion by not acknowldging th last data byt (No) and by issuing a OP condition. Bus timing is illustratd in Figur 4. Doc. No. MD-1103, Rv. L ILL. ll rights rsrvd. haractristics subjct to chang without notic.

5 24128 Figur 1. R/OP onditions L D R ONDIION OP ONDIION Figur 2. lav ddrss Bits DEVIE DDRE R/W Figur 3. cknowldg iming BU RELEE DELY (RNMIER) BU RELEE DELY (REEIVER) L FROM MER D OUPU FROM RNMIER D OUPU FROM REEIVER R DELY ( t ) EUP ( t U:D ) Figur 4. Bus iming t F t HIGH t R t LOW t LOW L t U: t HD:D t HD: t U:D t U:O D IN t t DH t BUF D OU 2009 ILL. ll rights rsrvd. haractristics subjct to chang without notic. 5 Doc No. MD-1103, Rv. L

6 24128 WRIE OPERION Byt Writ Upon rciving a lav addrss with th R/W bit st to 0, th will intrprt th nxt two byts as addrss byts hs byts ar usd to initializ th intrnal addrss countr; th 2 most significant bits ar don t car, th nxt 8 point to on of 256 availabl pags and th last 6 point to a location within a 64 byt pag. byt following th addrss byts will b intrprtd as data. h data will b loadd into th Pag Writ Buffr and will vntually b writtn to mmory at th addrss spcifid by th 14 activ addrss bits providd arlir. h will acknowldg th lav addrss, addrss byts and data byt. h Mastr thn starts th intrnal Writ cycl by issuing a OP condition (Figur 5). During th intrnal Writ cycl (t WR ), th D output will b tri-statd and additional Rad or Writ rqusts will b ignord (Figur 6). Hardwar Writ Protction With th WP pin hld HIGH, th ntir mmory is protctd against Writ oprations. If th WP pin is lft floating or is groundd, it has no impact on th opration of th h stat of th WP pin is strobd on th last falling dg of L immdiatly prcding th first data byt (Figur 8). If th WP pin is HIGH during th strob intrval, th will not acknowldg th data byt and th Writ rqust will b rjctd. Dlivry tat h is shippd rasd, i.., all byts ar FFh. Pag Writ By continuing to load data into th Pag Writ Buffr aftr th 1 st data byt and bfor issuing th OP condition, up to 64 byts can b writtn simultanously during on intrnal Writ cycl (Figur 7). If mor data byts ar loadd than locations availabl to th nd of pag, thn loading will continu from th bginning of pag, i.. th pag addrss is latchd and th addrss count automatically incrmnts to and thn wrapsaround at th pag boundary. Prviously loadd data can thus b ovrwrittn by nw data. What is vntually writtn to mmory rflcts th latst Pag Writ Buffr contnts. Only data loadd within th most rcnt Pag Writ squnc will b writtn to mmory. cknowldg Polling h rady/busy status of th can b ascrtaind by snding Rad or Writ rqusts immdiatly following th OP condition that initiatd th intrnal Writ cycl. s long as intrnal Writ is in progrss, th will not acknowldg th lav addrss. Doc. No. MD-1103, Rv. L ILL. ll rights rsrvd. haractristics subjct to chang without notic.

7 24128 Figur 5. Byt Writ qunc BU IVIY: MER LVE R LVE DDRE * = Don't ar Bit ** DDRE a13 a8 DDRE a7 a0 D O P P Figur 6. Writ ycl iming L D 8 th Bit Byt n t WR OP ONDIION R ONDIION DDRE Figur 7. Pag Writ qunc BU IVIY: MER LVE R * = Don't ar Bit P 63 LVE DDRE ** DDRE a 13 a 8 DDRE a 7 a 0 D n D n+1 D n+p O P P Figur 8. WP iming DDRE D L D a 7 a 0 d 7 d 0 tu:wp WP thd:wp 2009 ILL. ll rights rsrvd. haractristics subjct to chang without notic. 7 Doc No. MD-1103, Rv. L

8 24128 RED OPERION Immdiat Rad Upon rciving a lav addrss with th R/W bit st to 1, th will intrprt this as a rqust for data rsiding at th currnt byt addrss in mmory. h will acknowldg th lav addrss, will immdiatly shift out th data rsiding at th currnt addrss, and will thn wait for th Mastr to rspond. If th Mastr dos not acknowldg th data (No) and thn follows up with a OP condition (Figur 9), th rturns to tandby mod. lctiv Rad o rad data rsiding at a spcific location, th intrnal addrss countr must first b initializd as dscribd undr Byt Writ. If rathr than following up th two addrss byts with data, th Mastr instad follows up with an Immdiat Rad squnc, thn th will us th 14 activ addrs bits to initializ th intrnal addrss countr and will shift out data rsiding at th corrsponding location. If th Mastr dos not acknowldg th data (No) and thn follows up with a OP condition (Figur 10), th rturns to tandby mod. quntial Rad If during a Rad sssion th Mastr acknowldgs th 1 st data byt, thn th will continu transmitting data rsiding at subsqunt locations until th Mastr rsponds with a No, followd by a OP (Figur 11). In contrast to Pag Writ, during quntial Rad th addrss count will automatically incrmnt to and thn wrap-around at nd of mmory (rathr than nd of pag). Doc. No. MD-1103, Rv. L ILL. ll rights rsrvd. haractristics subjct to chang without notic.

9 24128 Figur 9. Immdiat Rad qunc and iming BU IVIY: MER R LVE DDRE N O O P P LVE D L 8 9 D 8 th Bit D OU NO OP Figur 10. lctiv Rad qunc BU IVIY: MER LVE R * = Don't ar Bit LVE DDRE ** DDRE a 13 a 8 DDRE a 7 a 0 R LVE DDRE D N O O P P Figur 11. quntial Rad qunc BU IVIY: MER LVE DDRE N O O P P LVE D D n n+1 D n+2 D n+x 2009 ILL. ll rights rsrvd. haractristics subjct to chang without notic. 9 Doc No. MD-1103, Rv. L

10 24128 PGE OULINE DRWING PDIP 8-Lad 300mils (L) PIN # 1 IDENIFIION D E1 YMBOL MIN NOM MX b b c D E B E B L OP VIEW E 2 1 L b2 c b B IDE VIEW END VIEW For currnt ap and Rl information, download th PDF fil from: Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with JEDE M-001. Doc. No. MD-1103, Rv. L ILL. ll rights rsrvd. haractristics subjct to chang without notic.

11 24128 OI 8-Lad 150mils (W) PIN # 1 IDENIFIION E1 E YMBOL MIN NOM MX b c D E E B h L θ 0º 8º OP VIEW D h 1 θ b L c IDE VIEW END VIEW For currnt ap and Rl information, download th PDF fil from: Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with JEDE M ILL. ll rights rsrvd. haractristics subjct to chang without notic. 11 Doc No. MD-1103, Rv. L

12 24128 OP 8-Lad 4.4mm (Y) b E1 E YMBOL MIN NOM MX b c D E E B L 1.00 REF L θ1 0 8 OP VIEW D 2 θ1 c 1 L1 L IDE VIEW END VIEW For currnt ap and Rl information, download th PDF fil from: Nots: 1. ll dimnsions ar in millimtrs. ngls in dgrs. 2. omplis with JEDE MO-153. Doc. No. MD-1103, Rv. L ILL. ll rights rsrvd. haractristics subjct to chang without notic.

13 24128 UDFN 8-Pad 2 x 3mm (HU3) D DEIL DP IZE 1.3 x 1.8 E E2 PIN #1 IDENIFIION PIN #1 INDEX RE 1 D2 OP VIEW IDE VIEW BOOM VIEW b YMBOL MIN NOM MX L REF DEIL b D D E E YP 0.10 REF L FRON VIEW For currnt ap and Rl information, download th PDF fil from: Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with JEDE MO ILL. ll rights rsrvd. haractristics subjct to chang without notic. 13 Doc No. MD-1103, Rv. L

14 24128 MOP 8-Lad 3.0 x 3.0mm (Z) E E1 YMBOL MIN NOM MX b c D E E B L L REF L B θ 0º 6º OP VIEW D 2 DEIL 1 b c IDE VIEW END VIEW θ L2 L L1 DEIL For currnt ap and Rl information, download th PDF fil from: Nots: 1. ll dimnsions ar in millimtrs. ngls in dgrs. 2. omplis with JEDE MO-187. Doc. No. MD-1103, Rv. L ILL. ll rights rsrvd. haractristics subjct to chang without notic.

15 24128 EXMPLE OF ORDERING INFORMION Prfix Dvic # uffix Y I G 3 ompany ID Product Numbr mpratur Rang I = Industrial (-40 to +85 ) E = Extndd (-40 to +125 ) : ap & Rl 3: 3000/Rl Packag L: PDIP W: OI, JEDE Y: OP HU3: UDFN (2 x 3mm) Z: MOP Lad Finish G: NiPdu Blank: Matt-in ORDERING INFORMION Ordrabl Part Numbrs 24128LI-G 24128LE-G 24128WI-G WE-G YI-G YE-G HU3IG3* 24128HU3EG3* 24128ZI-G ZE-G3 * Part numbr is not xactly th sam as th Exampl of Ordring Information shown abov. For part numbrs markd with * thr ar NO hyphns in th ordrabl part numbrs. Nots: (1) ll packags ar RoH-compliant (Lad-fr, Halogn-fr). (2) h standard lad finish is NiPdu. (3) h dvic usd in th abov xampl is a 24128YI-G3 (OP, Industrial mpratur, NiPdu, ap & Rl, 3,000/Rl). (4) For additional packag and tmpratur options, plas contact your narst ON miconductor als offic ILL. ll rights rsrvd. haractristics subjct to chang without notic. 15 Doc No. MD-1103, Rv. L

16 24128 REVIION HIORY Dat Rvision Dscription 07-Oct-05 Initial Issu 16-Nov-05 B Updat Ordring Information dd ap and Rl pcifications 02-Fb-06 Updat.. haractristics Updat Ordring Information 13-Mar-06 D Updat.. haractristics 26-pr-06 E Updat Faturs Updat Dvic Dscription Updat Pin onfiguration Updat.. haractristics Updat Hardwar Writ Protcttion dd Figur 6a dd 8-Lad OP Packag Drawing Updat Ordring Information dd 8-Lad OP Packag Marking 19-May-06 F Updat Faturs Updat Dvic Dscription Updat Pin onfiguration Updat Ordring Information Updat D.. Oprating haractristics Updat Pin Impdanc haractristics Updat.. haractristics dd Powr-On Rst (POR) Updat 8-Lad PDIP Packag Drawing Updat 8-Lad OI Packag Drawing Updat 8-Lad OP Packag Drawing Updat ap and Rl 11-ug-06 G Updat Faturs Updat D.. Oprating haractristics Updat Pin Impdanc haractristics Updat.. st onditions Updat Powr-On Rst (POR) Updat Pin Dscription Updat I 2 Bus Protocol Updat Dvic ddrssing Updat cknowldg Updat Writ Oprations Updat Byt Writ Updat Pag Writ Updat cknowldg Polling dd Dlivry tat Updat Rad Oprations Updat lctiv Rad Updat quntial Rad Updat Figur 1, 2, 3, 5, 6, 6a, 7, 8, 9 and 10 Updat Part Marking Updat Ordring Information 21-ug-07 H dd Extndd tmpratur rang Updat D.. Oprating haractristics tabl Updat Packag Outlin Drawings and add UDFN Packag Outlin Drawing dd MD- to documnt numbr 29-ug-07 I Updat UDFN Packag Outlin Drawing to includ dimnsion. 18-p-07 J dd MOP Packag Outlin Drawing 05-Nov-08 hang logo and fin print to ON miconductor 14-Jul-09 L Updat Ordring Information tabl Doc. No. MD-1103, Rv. L ILL. ll rights rsrvd. haractristics subjct to chang without notic.

17 ON miconductor and ar rgistrd tradmarks of miconductor omponnts Industris, LL (ILL). ILL rsrvs th right to mak changs without furthr notic to any products hrin. ILL maks no warranty, rprsntation or guarant rgarding th suitability of its products for any particular purpos, nor dos ILL assum any liability arising out of th application or us of any product or circuit, and spcifically disclaims any and all liability, including without limitation spcial, consquntial or incidntal damags. ypical paramtrs which may b providd in ILL data shts and/or spcifications can and do vary in diffrnt applications and actual prformanc may vary ovr tim. ll oprating paramtrs, including ypicals must b validatd for ach customr application by customr's tchnical xprts. ILL dos not convy any licns undr its patnt rights nor th rights of othrs. ILL products ar not dsignd, intndd, or authorizd for us as componnts in systms intndd for surgical implant into th body, or othr applications intndd to support or sustain lif, or for any othr application in which th failur of th ILL product could crat a situation whr prsonal injury or dath may occur. hould Buyr purchas or us ILL products for any such unintndd or unauthorizd application, Buyr shall indmnify and hold ILL and its officrs, mploys, subsidiaris, affiliats, and distributors harmlss against all claims, costs, damags, and xpnss, and rasonabl attorny fs arising out of, dirctly or indirctly, any claim of prsonal injury or dath associatd with such unintndd or unauthorizd us, vn if such claim allgs that ILL was nglignt rgarding th dsign or manufactur of th part. ILL is an Equal Opportunity/ffirmativ ction Employr. his litratur is subjct to all applicabl copyright laws and is not for rsal in any mannr. PUBLIION ORDERING INFORMION LIERURE FULFILLMEN: Litratur Distribution ntr for ON miconductor P.O. Box 5163, Dnvr, olorado U Phon: or oll Fr U/anada Fax: or oll Fr U/anada ordrlit@onsmi.com N. mrican chnical upport: oll Fr U/anada Europ, Middl East and frica chnical upport: Phon: Japan ustomr Focus ntr: Phon: ON miconductor Wbsit: Ordr Litratur: For additional information, plas contact your local als Rprsntativ

64-Kb I 2 C CMOS Serial EEPROM

64-Kb I 2 C CMOS Serial EEPROM 2464 64-b I 2 MO rial EEPROM FEURE upports tandard and Fast I 2 Protocol 1.8 V to 5.5 V upply Voltag Rang 32-Byt Pag Writ Buffr (1) Hardwar Writ Protction for ntir mmory chmitt riggrs and Nois upprssion

More information

CAT24C kb CMOS Serial EEPROM, Cascadable

CAT24C kb CMOS Serial EEPROM, Cascadable 24164 16 kb MO rial EEROM, ascadabl Dscription h 24164 is a 16 kb MO cascadabl rial EEROM dvic organizd intrnally as 128 pags of 16 byts ach, for a total of 2048 x 8 bits. h dvic supports both th tandard

More information

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM 2432 32- I 2 MO rial ROM scription h 2432 is a 32 MO rial ROM dvics, intrnally organizd as 128 pags of 32 yts ach. It faturs a 32 yt pag writ uffr and supports oth th tandard (100 khz) as wll as Fast (400

More information

CAT24C02, CAT24C04, CAT24C08, CAT24C16. EEPROM Serial 2/4/8/16 Kb I 2 C

CAT24C02, CAT24C04, CAT24C08, CAT24C16. EEPROM Serial 2/4/8/16 Kb I 2 C 2402, 2404, 2408, 2416 PROM rial 2/4/8/16 b I 2 scription h 2402/04/08/16 ar 2 b, 4 b, 8 b and 16 b rspctivly I 2 rial PROM dvics organizd intrnally as 16/32/64 and 128 pags rspctivly of 16 byts ach. ll

More information

CAT24C01/02/04/08/16. 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM DEVICE DESCRIPTION FEATURES PIN FUNCTIONS

CAT24C01/02/04/08/16. 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM DEVICE DESCRIPTION FEATURES PIN FUNCTIONS 2401/02/04/08/16 1-, 2-, 4-, 8- and 16- MO rial PROM FUR upports tandard and Fast I 2 Protocol 1.8 V to 5.5 V upply Voltag Rang 16-Byt Pag Writ Buffr Hardwar Writ Protction for ntir mmory chmitt riggrs

More information

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM 2464 64 b I 2 MO rial ROM scription h 2464 is a 64 b MO rial ROM dvic, intrnally organizd as 8192 words of 8 bits ach. It faturs a 32 byt pag writ buffr and supports th tandard (100 khz), Fast (400 khz)

More information

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM 2464 64 I 2 MO rial PROM scription h 2464 is a 64 MO rial PROM dvic, intrnally organizd as 8192 words of 8 its ach. It faturs a 32 yt pag writ uffr and supports th tandard (100 khz), Fast (400 khz) and

More information

NLX2G00. Dual 2-Input NAND Gate

NLX2G00. Dual 2-Input NAND Gate ual 2-Input NN Gat Th NLX2G00 is an advancd high-spd dual 2-input CMOS NN gat in ultra-small footprint. Th NLX2G00 input structurs provid protction whn voltags up to 7.0 volts ar applid, rgardlss of th

More information

CAT Kb SPI Serial CMOS EEPROM

CAT Kb SPI Serial CMOS EEPROM 64-Kb SPI Srial CMOS EEPROM Dscription Th CT25640 is a 64 Kb Srial CMOS EEPROM dvic intrnally organizd as 8Kx8 bits. This faturs a 64 byt pag writ buffr and supports th Srial Priphral Intrfac (SPI) protocol.

More information

NLX3G17. Triple Non-Inverting Schmitt-Trigger Buffer

NLX3G17. Triple Non-Inverting Schmitt-Trigger Buffer NLX3G7 Tripl Non-Invrting Schmitt-Triggr Buffr Th NLX3G7 MiniGat is an advancd high spd CMOS tripl non invrting Schmitt triggr buffr in ultra small footprint. Th NLX3G7 input and output structurs provid

More information

NLX1G10. 3-Input NAND Gate

NLX1G10. 3-Input NAND Gate NG0 3-Input NN Gat Th NG0 is an advancd high spd 3 input MOS NN gat in ultra small footprint. Th NG0 input structurs provid protction whn voltags up to 7.0 V ar applid, rgardlss of th supply voltag. Faturs

More information

CAT25080, CAT Kb and 16-Kb SPI Serial CMOS EEPROM

CAT25080, CAT Kb and 16-Kb SPI Serial CMOS EEPROM 8-Kb and 16-Kb SPI Srial CMOS EEPROM Dscription Th CT25080/25160 ar 8 Kb/16 Kb Srial CMOS EEPROM dvics intrnally organizd as 1024x8/2048x8 bits. Thy fatur a 32 byt pag writ buffr and support th Srial Priphral

More information

7WB Bit Bus Switch. The 7WB3306 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3306 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch Th WB3306 is an advancd high spd low powr 2 bit bus switch in ultra small footprints. Faturs High Spd: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connction Btwn 2 Ports Powr Down Protction

More information

NLU2G16. Dual Non-Inverting Buffer

NLU2G16. Dual Non-Inverting Buffer NLU2G ual Non-Invrting Buffr Th NLU2G MiniGat is an advancd high spd CMOS dual non invrting buffr in ultra small footprint. Th NLU2G input and output structurs provid protction whn voltags up to 7.0 V

More information

NLU2G17. Dual Non-Inverting Schmitt-Trigger Buffer

NLU2G17. Dual Non-Inverting Schmitt-Trigger Buffer NLU2G7 ual Non-Invrting Schmitt-Triggr Buffr Th NLU2G7 MiniGat is an advancd high spd CMOS dual non invrting Schmitt triggr buffr in ultra small footprint. Th NLU2G7 input and output structurs provid protction

More information

NLU1GT32. Single 2-Input OR Gate, TTL Level. LSTTL Compatible Inputs

NLU1GT32. Single 2-Input OR Gate, TTL Level. LSTTL Compatible Inputs NUGT32 Singl 2-Input OR Gat, TT vl STT Compatibl Inputs Th NUGT32 MiniGat is an advancd CMOS high spd 2 input OR gat in ultra small footprint. Th dvic input is compatibl with TT typ input thrsholds and

More information

32-Tap Digitally Programmable Potentiometer (DPP )

32-Tap Digitally Programmable Potentiometer (DPP ) -Tap Digitally Programmabl Potntiomtr (DPP ) CAT FEATURES -position linar tapr potntiomtr Low powr CMOS tchnology Singl supply opration:.v V Incrmnt up/down srial intrfac Rsistanc valus: 0kΩ, 0kΩ and 00kΩ

More information

NLU1GT86. Single 2-Input Exclusive OR Gate, TTL Level. LSTTL Compatible Inputs

NLU1GT86. Single 2-Input Exclusive OR Gate, TTL Level. LSTTL Compatible Inputs NUGT8 Singl 2-Input xclusiv OR Gat, TT vl STT Compatibl Inputs Th NUGT8 MiniGat is an advancd CMOS high spd 2 input xclusiv OR gat in ultra small footprint. Th dvic input is compatibl with TT typ input

More information

100-Tap Digitally Programmable Potentiometer (DPP )

100-Tap Digitally Programmable Potentiometer (DPP ) 00-Tap Digitally Programmabl Potntiomtr ( ) CAT FEATURES 00-position linar tapr potntiomtr Non-volatil EEPROM wipr storag 0 na ultra-low standby currnt Singl supply opration:. V.0 V Incrmnt up/down srial

More information

CAT93C56, CAT93C57. 2-Kb Microwire Serial CMOS EEPROM. CAT93C57 Not Recommended for New Designs: Replace with CAT93C56

CAT93C56, CAT93C57. 2-Kb Microwire Serial CMOS EEPROM. CAT93C57 Not Recommended for New Designs: Replace with CAT93C56 2-K Microwir Srial CMOS EEPROM CT93C57 Not Rcommndd for Nw signs: Rplac with CT93C56 scription Th CT93C56/57 is a 2 k CMOS Srial EEPROM dvic which is organizd as ithr 128 rgistrs of 16 its (ORG pin at

More information

CAT93C46. 1 kb Microwire Serial EEPROM

CAT93C46. 1 kb Microwire Serial EEPROM 1 k Microwir Srial PROM scription Th CT93C46 is a 1 k Srial PROM mmory dvic which is configurd as ithr 64 rgistrs of 16 its (ORG pin at V CC ) or 128 rgistrs of 8 its (ORG pin at GN). ach rgistr can writtn

More information

CAT24C21. 1 kb Dual Mode Serial EEPROM for VESA Plug-and-Play

CAT24C21. 1 kb Dual Mode Serial EEPROM for VESA Plug-and-Play 2421 1 k ual Mod rial ROM for V lug-and-lay sription h 2421 is a 1 k rial MO ROM intrnally organizd as 128 words of 8 its ah. h dvi omplis with th Vido ltronis tandard ssoiation s (V ), isplay ata hannl

More information

CAT24C kb I 2 C CMOS Serial EEPROM

CAT24C kb I 2 C CMOS Serial EEPROM 24256 256 k I 2 MO rial ROM sription h 24256 is a 256 k rial MO ROM, intrnally organizd as 32,768 words of 8 its ah. It faturs a 64 yt pag writ uffr and supports th tandard (100 khz), Fast (400 khz) and

More information

20-V N-Channel 1.8-V (G-S) MOSFET

20-V N-Channel 1.8-V (G-S) MOSFET -V N-Channl.8-V (G-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 FEATURE TrnchFET Powr MOFET MICRO FOOT Chipscal Packaging Rducs Footprint Ara

More information

N57M tap Digital Potentiometer (POT)

N57M tap Digital Potentiometer (POT) NM tap igital Potntiomtr (POT) scription Th NM is a singl digital POT dsignd as an lctronic rplacmnt for mchanical potntiomtrs and trim pots. Idal for automatd adjustmnts on high volum production lins,

More information

CAT24C kb I 2 C CMOS Serial EEPROM

CAT24C kb I 2 C CMOS Serial EEPROM 24512 512 k I 2 M rial RM sription h 24512 is a 512 k rial M RM, intrnally organizd as 65,536 words of 8 its ah. It faturs a 128 yt pag writ uffr and supports th tandard (100 khz), Fast (400 khz) and Fast

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET i5y N-Channl -V (-) MOFE PROUC UMMARY V (V) R (on) (Ω) I (A) a Q g (yp.).38 at V G = V 33 37.5 nc.5 at V G =.5 V 3 FEAURE Halogn-fr According to IEC 29-2-2 Availabl rnchfe Gn II Powr MOFE % R g and UI

More information

SP1001 Series - 8pF 15kV Unidirectional TVS Array

SP1001 Series - 8pF 15kV Unidirectional TVS Array Sris - 8pF kv Unidirctional TVS Array RoHS Pb GRN scription Znr diods fabricatd in a propritary silicon avalanch tchnology protct ach I/O pin to provid a high lvl of protction for lctronic quipmnt that

More information

SP490/SP491. Full Duplex RS-485 Transceivers. Now Available in Lead Free Packaging

SP490/SP491. Full Duplex RS-485 Transceivers. Now Available in Lead Free Packaging SP490/SP491 Full uplx RS-485 Transcivrs FTURS +5V Only Low Powr icmos rivr/rcivr nal (SP491) RS-485 and RS-422 rivrs/rcivrs Pin Compatil with LTC490 and SN75179 (SP490) Pin Compatil with LTC491 and SN75180

More information

Precision Micropower 2.5V ShuntVoltage Reference

Precision Micropower 2.5V ShuntVoltage Reference SPX4040 Prcision Micropowr.5V ShuntVoltag Rfrnc FETURES Trimmd Bandgap to 0.5% and % Wid Oprating Currnt 0µ to 5m Extndd Tmpratur Rang: -40 C to 85 C Low Tmpratur Cofficint 00 ppm/ C Rplacmnt in for LM4040

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i443ay PChannl 3V () MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).75 at V G = V 5 3. at V G = 4.5 V.3 O8 FEATURE Halognfr According to IEC 649 Availabl TrnchFET Powr MOFET APPLICATION Notbook Load witch

More information

32-Tap Digitally Programmable Potentiometer (DPP )

32-Tap Digitally Programmable Potentiometer (DPP ) -Tap Digitally Programmabl Potntiomtr (DPP ) CAT FEATURES -position linar tapr potntiomtr Low powr CMOS tchnology Singl supply opration:.v V Incrmnt up/down srial intrfac Rsistanc valus: 0kΩ, 0kΩ and 00kΩ

More information

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM 24512 512 I 2 MO rial ROM sription h 24512 is a 512 rial MO ROM, intrnally organizd as 65,536 words of 8 its ah. It faturs a 128 yt pag writ uffr and supports th tandard (100 khz), Fast (400 khz) and Fast

More information

P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET i4465ay PChannl.8V (G) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) b Q g (Typ.) 9 at V G = 4.5 V 3.7 8 at V G = 2.5 V 2.4 55 nc 6 at V G =.8 V FEATURE Halognfr According to IEC 624922 Availabl TrnchFET

More information

100-Tap Digitally Programmable Potentiometer (DPP )

100-Tap Digitally Programmable Potentiometer (DPP ) 00-Tap Digitally Programmabl Potntiomtr ( ) CAT FEATURES 00-position linar tapr potntiomtr Non-volatil EEPROM wipr storag 0nA ultra-low standby currnt Singl supply opration:.v.0v Incrmnt up/down srial

More information

256K (32K x 8) OTP EPROM AT27C256R

256K (32K x 8) OTP EPROM AT27C256R Faturs Fast Rad Accss Tim 45 ns Low-Powr CMOS Opration 100 µa Max Standby 20 ma Max Activ at 5 MHz JEDEC Standard Packags 28-lad PDIP 32-lad PLCC 28-lad TSOP and SOIC 5V ± 10% Supply High Rliability CMOS

More information

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT PT24 sris Suprsds data of 200 pr 4 2004 ug 02 PT24 sris FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral

More information

20 V N-Channel 1.8 V (G-S) MOSFET

20 V N-Channel 1.8 V (G-S) MOSFET V N-Channl.8 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Bump id Viw 3 4.37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 G MICRO FOOT Backsid Viw 84 xxx FEATURE TrnchFET Powr MOFET MICRO

More information

General Purpose ESD Protection - SP1001 Series. Description. Features. Applications

General Purpose ESD Protection - SP1001 Series. Description. Features. Applications TVS iod Arrays (SPA iods) Gnral Purpos ES Protction - SP00 Sris SP00 Sris - 8pF kv Unidirctional TVS Array RoHS Pb GREEN scription Znr diods fabricatd in a propritary silicon avalanch tchnology protct

More information

2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK. Outline. Base UMT3. Base. Package size (mm) Taping code

2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK. Outline. Base UMT3. Base. Package size (mm) Taping code 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K PNP 50m -50V Gnral Purpos Transistors Datasht Outlin Paramtr V CO I C Valu 50V 150m VMT3 MT3F Collctor Bas Bas mittr mittr Collctor Faturs 1) Gnral

More information

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3 N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low Gat Charg R DS(ON) 25mΩ G RoHS-compliant, halogn-fr I D 28A S BV DSS 30V Dscription Advancd Powr MOSFETs from

More information

DATA SHEET. PDTC144W series NPN resistor-equipped transistors; R1=47kΩ, R2 = 22 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTC144W series NPN resistor-equipped transistors; R1=47kΩ, R2 = 22 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT Suprsds data of 2004 Mar 2 2004 ug 7 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching

More information

G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.

G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0. N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low On-rsistanc R DS(ON) 36mΩ G RoHS-compliant, halogn-fr I D 25A S BV DSS 6V Dscription Advancd Powr MOSFETs from

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channl 2 V (-) MOFET i846b PROUCT UMMARY V (V) R (on) () MAX. I (A) Q g (TYP.) 2 mm.37 at V G = 2.5 V 6 7.5 nc.33 at V G = 4.5 V 6.42 at V G =.8 V 5 xxxx xxx Backsid Viw MICRO FOOT.5 x.5 mm 6 5 Bump

More information

Low Capacitance ESD Protection - SP3003 Series. Description. Features. Applications. LCD/ PDP TVs DVD Players Desktops MP3/ PMP Digital Cameras

Low Capacitance ESD Protection - SP3003 Series. Description. Features. Applications. LCD/ PDP TVs DVD Players Desktops MP3/ PMP Digital Cameras TVS iod Arrays (SPA iods) SP3003 Sris 0.65pF iod Array RoHS Pb GREEN scription Th SP3003 has ultra low capacitanc rail-to-rail diods with an additional znr diod fabricatd in a propritary silicon avalanch

More information

Ph.D. students Department of Electronics and Telecommunications, Politecnico di Torino

Ph.D. students Department of Electronics and Telecommunications, Politecnico di Torino 01OPIIU Il softwar libro Dvic-to-dvic communications: Wi-Fi Dirct Laura Cocona s189195 Carlo Borgiattino s189149 Ph.D. studnts Dpartmnt of Elctronics and Tlcommunications, Politcnico di Torino Rport for

More information

CAT25010, CAT25020, CAT Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM

CAT25010, CAT25020, CAT Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM CT25010, CT25020, CT25040 1-K, 2-K and 4-K SPI Srial CMOS PROM sription Th CT25010/20/40 ar 1 K/2 K/4 K Srial CMOS PROM dvis intrnally organizd as 128x8/256x8/512x8 its. Thy fatur a 16 yt pag writ uffr

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channl V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) Max. I (A) Q g (Typ.).37 at V G =.5 V 7.5 nc.33 at V G =.5 V. at V G =.8 V 5 Bump id Viw MICRO FOOT G Backsid Viw FEATURE TrnchFET Powr MOFET Ultra-small.5

More information

REFLECTIVE OBJECT SENSOR

REFLECTIVE OBJECT SENSOR QR4 PACKAG DIMNSIONS + + D.6 (6.) D + +.49 (.5). (8.4).97 (5.) 4.4 (8.) SCHMATIC.8 (.).8 (.46) SQ. (4X) 4. (.54).6 (9.) NOTS:. Dimensions for all drawings are in inches.. Tolerance of ±. on all non-nominal

More information

DATA SHEET. PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT Suprsds data of 200 Sp 0 2004 ug 7 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching and

More information

DATA SHEET. PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT Suprsds data of 2004 pr 06 2004 ug 6 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching

More information

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT PT24 sris Suprsds data of 200 pr 4 2004 ug 02 PT24 sris FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral

More information

Item. Recommended LC Driving Voltage for Standard Temp. Modules

Item. Recommended LC Driving Voltage for Standard Temp. Modules AV2020 20x2 Character 5x7 dots with cursor 1/16 duty +5V single supply Built in Controller (KS0066 or quivalent) B/L driven by pin1 and 2, 15 and 16 or A,K Pin Assignment No. Symbol Function 1 Vss Gnd,

More information

Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers

Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers Product is End of Lif G348, G349 Prcision 8-h/ual 4-h Low Voltag nalog Multiplxrs ESRIPTION Th G348, G349 uss imos wafr fabrication tchnology that allows th G348/349 to oprat on singl and dual supplis.

More information

DG3537, DG3538, DG3539, DG , 360 MHz, Dual SPST Analog Switches. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG3537, DG3538, DG3539, DG , 360 MHz, Dual SPST Analog Switches. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS 4, 360 MHz, Dual SPST nalog Switchs DESRIPTION Th DG3537, DG3538, DG3539, DG3540 ar dual SPST analog switchs which oprat from.8 V to 5.5 V singl rail powr supply. Thy ar dsign for audio, vido, and US switching

More information

DUAL P-CHANNEL MATCHED MOSFET PAIR

DUAL P-CHANNEL MATCHED MOSFET PAIR DVNCD INR DVICS, INC. D1102/D1102B D1102 DU P-CHNN MTCHD MOSFT PIR GNR DSCRIPTION Th D1102 is a monolithic dual P-channl matchd transistor pair intndd for a road rang of analog applications. Ths nhancmntmod

More information

General Notes About 2007 AP Physics Scoring Guidelines

General Notes About 2007 AP Physics Scoring Guidelines AP PHYSICS C: ELECTRICITY AND MAGNETISM 2007 SCORING GUIDELINES Gnral Nots About 2007 AP Physics Scoring Guidlins 1. Th solutions contain th most common mthod of solving th fr-rspons qustions and th allocation

More information

Three-wire Serial EEPROMs AT93C46 AT93C56 (1) AT93C66 (2)

Three-wire Serial EEPROMs AT93C46 AT93C56 (1) AT93C66 (2) Faturs Low-voltag and Standard-voltag Opration 2.7 (V CC = 2.7V to 5.5V).8 (V CC =.8V to 5.5V) Usr-slctabl Intrnal Organization K: 28 x 8 or 64 x 6 2K: 256 x 8 or 28 x 6 4K: 52 x 8 or 256 x 6 Thr-wir Srial

More information

100-Tap Digitally Programmable Potentiometer (DPP )

100-Tap Digitally Programmable Potentiometer (DPP ) 00-Tap igitally Programmabl Potntiomtr ( ) CT FTURS 00-position linar tapr potntiomtr Non-volatil PROM wipr storag 0n ultra-low standby currnt Singl supply opration:.v.0v Incrmnt up/down srial intrfac

More information

Random Access Techniques: ALOHA (cont.)

Random Access Techniques: ALOHA (cont.) Random Accss Tchniqus: ALOHA (cont.) 1 Exampl [ Aloha avoiding collision ] A pur ALOHA ntwork transmits a 200-bit fram on a shard channl Of 200 kbps at tim. What is th rquirmnt to mak this fram collision

More information

CAT93C46B. 1-Kb Microwire Serial EEPROM

CAT93C46B. 1-Kb Microwire Serial EEPROM 1-K Mirowir Srial PROM sription Th CT93C46B is a 1 K Srial PROM mmory dvi whih is onfigurd as ithr 64 rgistrs of 16 its (ORG pin at V CC ) or 128 rgistrs of 8 its (ORG pin at GN). ah rgistr an writtn (or

More information

512K (64K x 8) OTP EPROM AT27C512R

512K (64K x 8) OTP EPROM AT27C512R Faturs Fast Rad Accss Tim 45 ns Low-Powr CMOS Opration 100 µa Max Standby 20 ma Max Activ at 5 MHz JEDEC Standard Packags 28-lad PDIP 32-lad PLCC 28-lad TSOP and SOIC 5V ± 10% Supply High-Rliability CMOS

More information

Searching Linked Lists. Perfect Skip List. Building a Skip List. Skip List Analysis (1) Assume the list is sorted, but is stored in a linked list.

Searching Linked Lists. Perfect Skip List. Building a Skip List. Skip List Analysis (1) Assume the list is sorted, but is stored in a linked list. 3 3 4 8 6 3 3 4 8 6 3 3 4 8 6 () (d) 3 Sarching Linkd Lists Sarching Linkd Lists Sarching Linkd Lists ssum th list is sortd, but is stord in a linkd list. an w us binary sarch? omparisons? Work? What if

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notic ar Customr, On 7 Fbruary 207 th formr NXP Standard Product businss bcam a nw company with th tradnam Nxpria. Nxpria is an industry lading supplir of iscrt, Logic and PowrMOS smiconductors

More information

IXBT22N300HV IXBH22N300HV

IXBT22N300HV IXBH22N300HV High Voltag, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advanc Tchnical Information IXBTNHV IXBHNHV V CS = V = A V C(sat). TO-6HV (IXBT) Symbol Tst Conditions Maximum Ratings V CS = 5 C to

More information

ECE602 Exam 1 April 5, You must show ALL of your work for full credit.

ECE602 Exam 1 April 5, You must show ALL of your work for full credit. ECE62 Exam April 5, 27 Nam: Solution Scor: / This xam is closd-book. You must show ALL of your work for full crdit. Plas rad th qustions carfully. Plas chck your answrs carfully. Calculators may NOT b

More information

CAT93C46B. EEPROM Serial 1-Kb Microwire

CAT93C46B. EEPROM Serial 1-Kb Microwire PROM Srial 1-K Mirowir sription Th CT93C46B is a 1 K Mirowir Srial PROM mmory dvi whih is onfigurd as ithr 64 rgistrs of 16 its (ORG pin at V CC ) or 128 rgistrs of 8 its (ORG pin at GN). ah rgistr an

More information

IXTT3N200P3HV IXTH3N200P3HV

IXTT3N200P3HV IXTH3N200P3HV Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous

More information

Answer Homework 5 PHA5127 Fall 1999 Jeff Stark

Answer Homework 5 PHA5127 Fall 1999 Jeff Stark Answr omwork 5 PA527 Fall 999 Jff Stark A patint is bing tratd with Drug X in a clinical stting. Upon admiion, an IV bolus dos of 000mg was givn which yildd an initial concntration of 5.56 µg/ml. A fw

More information

SPI Serial EEPROMs AT25128 AT Features. Description. Pin Configurations. 128K (16,384 x 8) 256K (32,768 x 8)

SPI Serial EEPROMs AT25128 AT Features. Description. Pin Configurations. 128K (16,384 x 8) 256K (32,768 x 8) Faturs Srial Priphral Intrfac (SPI) Compatibl Supports SPI Mods 0 (0,0) and 3 (,) Low-voltag and Standard-voltag Opration.7 (V CC =.7V to 5.5V).8 (V CC =.8V to 5.5V) 3 MHz Clock Rat 64-byt Pag Mod and

More information

Chapter 6 Folding. Folding

Chapter 6 Folding. Folding Chaptr 6 Folding Wintr 1 Mokhtar Abolaz Folding Th folding transformation is usd to systmatically dtrmin th control circuits in DSP architctur whr multipl algorithm oprations ar tim-multiplxd to a singl

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notic ar Customr, On 7 Fbruary 207 th formr NXP Standard Product businss bcam a nw company with th tradnam Nxpria. Nxpria is an industry lading supplir of iscrt, Logic and PowrMOS smiconductors

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notic ar Customr, On 7 Fbruary 207 th formr NXP Standard Product businss bcam a nw company with th tradnam Nxpria. Nxpria is an industry lading supplir of iscrt, Logic and PowrMOS smiconductors

More information

That is, we start with a general matrix: And end with a simpler matrix:

That is, we start with a general matrix: And end with a simpler matrix: DIAGON ALIZATION OF THE STR ESS TEN SOR INTRO DUCTIO N By th us of Cauchy s thorm w ar abl to rduc th numbr of strss componnts in th strss tnsor to only nin valus. An additional simplification of th strss

More information

First derivative analysis

First derivative analysis Robrto s Nots on Dirntial Calculus Chaptr 8: Graphical analysis Sction First drivativ analysis What you nd to know alrady: How to us drivativs to idntiy th critical valus o a unction and its trm points

More information

Unfired pressure vessels- Part 3: Design

Unfired pressure vessels- Part 3: Design Unfird prssur vssls- Part 3: Dsign Analysis prformd by: Analysis prformd by: Analysis vrsion: According to procdur: Calculation cas: Unfird prssur vssls EDMS Rfrnc: EF EN 13445-3 V1 Introduction: This

More information

CAT93C86B. 16-Kb Microwire Serial EEPROM

CAT93C86B. 16-Kb Microwire Serial EEPROM 16-K Mirowir Srial PROM sription Th CT93C86B is a 16 K Srial PROM mmory dvi whih is onfigurd as ithr rgistrs of 16 its (ORG pin at V CC ) or 8 its (ORG pin at GN). ah rgistr an writtn (or rad) srially

More information

ECE 2210 / 00 Phasor Examples

ECE 2210 / 00 Phasor Examples EE 0 / 00 Phasor Exampls. Add th sinusoidal voltags v ( t ) 4.5. cos( t 30. and v ( t ) 3.. cos( t 5. v ( t) using phasor notation, draw a phasor diagram of th thr phasors, thn convrt back to tim domain

More information

Aim To manage files and directories using Linux commands. 1. file Examines the type of the given file or directory

Aim To manage files and directories using Linux commands. 1. file Examines the type of the given file or directory m E x. N o. 3 F I L E M A N A G E M E N T Aim To manag ils and dirctoris using Linux commands. I. F i l M a n a g m n t 1. il Examins th typ o th givn il or dirctory i l i l n a m > ( o r ) < d i r c t

More information

CS 6353 Compiler Construction, Homework #1. 1. Write regular expressions for the following informally described languages:

CS 6353 Compiler Construction, Homework #1. 1. Write regular expressions for the following informally described languages: CS 6353 Compilr Construction, Homwork #1 1. Writ rgular xprssions for th following informally dscribd languags: a. All strings of 0 s and 1 s with th substring 01*1. Answr: (0 1)*01*1(0 1)* b. All strings

More information

1 Minimum Cut Problem

1 Minimum Cut Problem CS 6 Lctur 6 Min Cut and argr s Algorithm Scribs: Png Hui How (05), Virginia Dat: May 4, 06 Minimum Cut Problm Today, w introduc th minimum cut problm. This problm has many motivations, on of which coms

More information

MA 262, Spring 2018, Final exam Version 01 (Green)

MA 262, Spring 2018, Final exam Version 01 (Green) MA 262, Spring 218, Final xam Vrsion 1 (Grn) INSTRUCTIONS 1. Switch off your phon upon ntring th xam room. 2. Do not opn th xam booklt until you ar instructd to do so. 3. Bfor you opn th booklt, fill in

More information

Physical Organization

Physical Organization Lctur usbasd symmtric multiprocssors (SM s): combin both aspcts Compilr support? rchitctural support? Static and dynamic locality of rfrnc ar critical for high prformanc M I M ccss to local mmory is usually

More information

Homework #3. 1 x. dx. It therefore follows that a sum of the

Homework #3. 1 x. dx. It therefore follows that a sum of the Danil Cannon CS 62 / Luan March 5, 2009 Homwork # 1. Th natural logarithm is dfind by ln n = n 1 dx. It thrfor follows that a sum of th 1 x sam addnd ovr th sam intrval should b both asymptotically uppr-

More information

Exam 1. It is important that you clearly show your work and mark the final answer clearly, closed book, closed notes, no calculator.

Exam 1. It is important that you clearly show your work and mark the final answer clearly, closed book, closed notes, no calculator. Exam N a m : _ S O L U T I O N P U I D : I n s t r u c t i o n s : It is important that you clarly show your work and mark th final answr clarly, closd book, closd nots, no calculator. T i m : h o u r

More information

CS 361 Meeting 12 10/3/18

CS 361 Meeting 12 10/3/18 CS 36 Mting 2 /3/8 Announcmnts. Homwork 4 is du Friday. If Friday is Mountain Day, homwork should b turnd in at my offic or th dpartmnt offic bfor 4. 2. Homwork 5 will b availabl ovr th wknd. 3. Our midtrm

More information

Design Guidelines for Quartz Crystal Oscillators. R 1 Motional Resistance L 1 Motional Inductance C 1 Motional Capacitance C 0 Shunt Capacitance

Design Guidelines for Quartz Crystal Oscillators. R 1 Motional Resistance L 1 Motional Inductance C 1 Motional Capacitance C 0 Shunt Capacitance TECHNICAL NTE 30 Dsign Guidlins for Quartz Crystal scillators Introduction A CMS Pirc oscillator circuit is wll known and is widly usd for its xcllnt frquncy stability and th wid rang of frquncis ovr which

More information

Tap Changer Type MHZ Specification, Assembly and Materials

Tap Changer Type MHZ Specification, Assembly and Materials Tap Changr Typ MH Spcification, ssmbly and Matrials Dscriptions Gnral Spcifications Rmarks availabl in on, two or thr phas application multi layr typs upon rqust shaft lngth availabl in variabl sizs driving

More information

Differential Equations

Differential Equations Prfac Hr ar m onlin nots for m diffrntial quations cours that I tach hr at Lamar Univrsit. Dspit th fact that ths ar m class nots, th should b accssibl to anon wanting to larn how to solv diffrntial quations

More information

CAT93C kb Microwire Serial EEPROM

CAT93C kb Microwire Serial EEPROM 16 k Mirowir Srial PROM sription Th CT93C86 is a 16 k Srial PROM mmory dvi whih is onfigurd as ithr rgistrs of 16 its (ORG pin at V CC ) or 8 its (ORG pin at GN). ah rgistr an writtn (or rad) srially y

More information

15. Stress-Strain behavior of soils

15. Stress-Strain behavior of soils 15. Strss-Strain bhavior of soils Sand bhavior Usually shard undr draind conditions (rlativly high prmability mans xcss por prssurs ar not gnratd). Paramtrs govrning sand bhaviour is: Rlativ dnsity Effctiv

More information

CD74HCT4543 BCD-TO-7 SEGMENT LATCH/DECODER/DRIVER

CD74HCT4543 BCD-TO-7 SEGMENT LATCH/DECODER/DRIVER 4.-V to.-v V CC Opration s for BCD Cod Storag Blanking Capability Phas for Complmnting s Fanout (Ovr Tmpratur Rang) Standard s 0 LSTTL Loads Baland Propagation Dlay and Transition Tims Signifiant Powr

More information

The graph of y = x (or y = ) consists of two branches, As x 0, y + ; as x 0, y +. x = 0 is the

The graph of y = x (or y = ) consists of two branches, As x 0, y + ; as x 0, y +. x = 0 is the Copyright itutcom 005 Fr download & print from wwwitutcom Do not rproduc by othr mans Functions and graphs Powr functions Th graph of n y, for n Q (st of rational numbrs) y is a straight lin through th

More information

Status of LAr TPC R&D (2) 2014/Dec./23 Neutrino frontier workshop 2014 Ryosuke Sasaki (Iwate U.)

Status of LAr TPC R&D (2) 2014/Dec./23 Neutrino frontier workshop 2014 Ryosuke Sasaki (Iwate U.) Status of LAr TPC R&D (2) 214/Dc./23 Nutrino frontir workshop 214 Ryosuk Sasaki (Iwat U.) Tabl of Contnts Dvlopmnt of gnrating lctric fild in LAr TPC Introduction - Gnrating strong lctric fild is on of

More information

Continuous probability distributions

Continuous probability distributions Continuous probability distributions Many continuous probability distributions, including: Uniform Normal Gamma Eponntial Chi-Squard Lognormal Wibull EGR 5 Ch. 6 Uniform distribution Simplst charactrizd

More information

Higher order derivatives

Higher order derivatives Robrto s Nots on Diffrntial Calculus Chaptr 4: Basic diffrntiation ruls Sction 7 Highr ordr drivativs What you nd to know alrady: Basic diffrntiation ruls. What you can larn hr: How to rpat th procss of

More information

Computing and Communications -- Network Coding

Computing and Communications -- Network Coding 89 90 98 00 Computing and Communications -- Ntwork Coding Dr. Zhiyong Chn Institut of Wirlss Communications Tchnology Shanghai Jiao Tong Univrsity China Lctur 5- Nov. 05 0 Classical Information Thory Sourc

More information

Alpha and beta decay equation practice

Alpha and beta decay equation practice Alpha and bta dcay quation practic Introduction Alpha and bta particls may b rprsntd in quations in svral diffrnt ways. Diffrnt xam boards hav thir own prfrnc. For xampl: Alpha Bta α β alpha bta Dspit

More information

Brief Introduction to Statistical Mechanics

Brief Introduction to Statistical Mechanics Brif Introduction to Statistical Mchanics. Purpos: Ths nots ar intndd to provid a vry quick introduction to Statistical Mchanics. Th fild is of cours far mor vast than could b containd in ths fw pags.

More information

CAT93C76B. EEPROM Serial 8-Kb Microwire

CAT93C76B. EEPROM Serial 8-Kb Microwire PROM Srial 8-K Mirowir sription Th CT93C76B is an 8 K Mirowir Srial PROM mmory dvi whih is onfigurd as ithr rgistrs of 16 its (ORG pin at V CC or Not Conntd) or 8 its (ORG pin at GN). ah rgistr an writtn

More information