CAT24C01/02/04/08/16. 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM DEVICE DESCRIPTION FEATURES PIN FUNCTIONS

Size: px
Start display at page:

Download "CAT24C01/02/04/08/16. 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM DEVICE DESCRIPTION FEATURES PIN FUNCTIONS"

Transcription

1 2401/02/04/08/16 1-, 2-, 4-, 8- and 16- MO rial PROM FUR upports tandard and Fast I 2 Protocol 1.8 V to 5.5 V upply Voltag Rang 16-Byt Pag Writ Buffr Hardwar Writ Protction for ntir mmory chmitt riggrs and Nois upprssion Filtrs on I 2 Bus Inputs ( and ). ow powr MO tchnology 1,000,000 program/ras cycls 100 yar data rtntion Industrial tmpratur rang RoH-compliant 8-lad PIP, OI, and OP, 8-pad FN and 5-lad O-23 packags. For Ordring Information dtails, s pag 17. VI RIPION h 2401/02/04/08/16 ar 1-, 2-, 4-, 8- and 16- rspctivly MO rial PROM dvics organizd intrnally as 8/16/32/64 and 128 pags rspctivly of 16 yts ach. ll dvics support oth th tandard (100 khz) as wll as Fast (400 khz) I 2 protocol. ata is writtn y providing a starting addrss, thn loading 1 to 16 contiguous yts into a Pag Writ Buffr, and thn writing all data to non-volatil mmory in on intrnal writ cycl. ata is rad y providing a starting addrss and thn shifting out data srially whil automatically incrmnting th intrnal addrss count. xtrnal addrss pins mak it possil to addrss up to ight 2401 or 2402, four 2404, two 2408 and on 2416 dvic on th sam us. PIN ONFIGURION FUNION YMBO PIP () OI (W) OP (Y) FN (VP2) O-23 () V 2416 / 08 / 04 / 02 / 01 N / N / N / 0 / 0 N / N / 1 / 1 / 1 N / 2 / 2 / 2 / 2 V V WP V WP V 2, 1, 0 24xx For th location of Pin 1, plas consult th corrsponding packag drawing. WP PIN FUNION 0, 1, 2 WP V V N vic ddrss Inputs rial ata Input/Output rial lock Input Writ Protct Input Powr upply Ground No onnct V * atalyst carris th I 2 protocol undr a licns from th Philips orporation y atalyst miconductor, Inc. haractristics sujct to chang without notic 1 oc. No. 1115, Rv. B

2 2401/02/04/08/16 BOU MXIMUM RING (1) torag mpratur Voltag on ny Pin with Rspct to Ground (2) -65 to V to +6.5 V RIBIIY HRRII (3) ymol Paramtr Min Units N (4) N nduranc 1,000,000 Program/ ras ycls R ata Rtntion 100 Yars.. OPRING HRRII V = 1.8 V to 5.5 V, = -40 to 85, unlss othrwis spcifid. ymol Paramtr st onditions Min Max Units I R Rad urrnt Rad, f = 400 khz 1 m I W Writ urrnt Writ, f = 400 khz 1 m I B tandy urrnt ll I/O Pins at GN or V 1 μ I I/O Pin akag Pin at GN or V 1 μ V I Input ow Voltag -0.5 V x 0.3 V V IH Input High Voltag V x 0.7 V V V O1 Output ow Voltag V 2.5 V, I O = 3.0 m 0.4 V V O2 Output ow Voltag V < 2.5 V, I O = 1.0 m 0.2 V PIN IMPN HRRII V = 1.8 V to 5.5 V, = -40 to 85, unlss othrwis spcifid. ymol Paramtr onditions Max Units (3) IN I/O Pin apacitanc V IN = 0 V 8 pf (3) IN Input apacitanc (othr pins) V IN = 0 V 6 pf I (5) WP WP Input urrnt V IN < V IH, V = 5.5 V 200 V IN < V IH, V = 3.3 V 150 V IN < V IH, V = 1.8 V 100 V IN > V IH 1 μ Not: (1) trsss aov thos listd undr solut Maximum Ratings may caus prmannt damag to th dvic. hs ar strss ratings only, and functional opration of th dvic at ths or any othr conditions outsid of thos listd in th oprational sctions of this spcification is not implid. xposur to any asolut maximum rating for xtndd priods may affct dvic prformanc and rliaility. (2) h input voltag on any pin should not lowr than -0.5 V or highr than V V. uring transitions, th voltag on any pin may undrshoot to no lss than -1.5 V or ovrshoot to no mor than V V, for priods of lss than 20 ns. (3) hs paramtrs ar tstd initially and aftr a dsign or procss chang that affcts th paramtr according to appropriat -Q100 and J tst mthods. (4) Pag Mod, V = 5 V, 25 (5) Whn not drivn, th WP pin is pulld down to GN intrnally. For improvd nois immunity, th intrnal pull-down is rlativly strong; thrfor th xtrnal drivr must al to supply th pull-down currnt whn attmpting to driv th input HIGH. o consrv powr, as th input lvl xcds th trip point of th MO input uffr (~ 0.5 x V ), th strong pull-down rvrts to a wak currnt sourc. oc. No. 1115, Rv. B y atalyst miconductor, Inc. haractristics sujct to chang without notic

3 2401/02/04/08/16.. HRRII (1) V = 1.8 V to 5.5 V, = -40 to 85. tandard Fast ymol Paramtr Min Max Min Max Units F lock Frquncy khz t H: R ondition Hold im μs t OW ow Priod of lock μs t HIGH High Priod of lock μs t U: R ondition tup im μs t H: ata In Hold im 0 0 μs t U: ata In tup im ns t R and Ris im ns t (2) F and Fall im ns t U:O OP ondition tup im μs t BUF Bus Fr im Btwn OP and R μs t ow to ata Out Valid μs t H ata Out Hold im ns (2) i Nois Puls Filtrd at and Inputs ns t U:WP WP tup im 0 0 μs t H:WP WP Hold im μs t WR Writ ycl im 5 5 ms t (2, 3) PU Powr-up to Rady Mod 1 1 ms Not: (1) st conditions according to.. st onditions tal. (2) std initially and aftr a dsign or procss chang that affcts this paramtr. (3) t PU is th dlay twn th tim V is stal and th dvic is rady to accpt commands... ONIION Input vls Input Ris and Fall ims Input Rfrnc vls Output Rfrnc vls Output oad 0.2 x V to 0.8 x V 50 ns 0.3 x V, 0.7 x V 0.5 x V urrnt ourc: I O = 3 m (V 2.5 V); I O = 1 m (V < 2.5 V); = 100 pf 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 3 oc No. 1115, Rv. B

4 2401/02/04/08/16 POWR-ON R (POR) ach 24xx* incorporats Powr-On Rst (POR) circuitry which protcts th intrnal logic against powring up in th wrong stat. 24xx dvic will powr up into tandy mod aftr V xcds th POR triggr lvl and will powr down into Rst mod whn V drops low th POR triggr lvl. his i-dirctional POR fatur protcts th dvic against rown-out failur following a tmporary loss of powr. * For common faturs, th 2401/02/04/08/16 will rfrd to as 24xx PIN RIPION : h rial lock input pin accpts th rial lock gnratd y th Mastr. : h rial ata I/O pin rcivs input data and transmits data stord in PROM. In transmit mod, this pin is opn drain. ata is acquird on th positiv dg, and is dlivrd on th ngativ dg of. 0, 1 and 2: h ddrss inputs st th dvic addrss whn cascading multipl dvics. Whn not drivn, ths pins ar pulld OW intrnally. WP: h Writ Protct input pin inhiits all writ oprations, whn pulld HIGH. Whn not drivn, this pin is pulld OW intrnally. FUNION RIPION h 24xx supports th Intr-Intgratd ircuit (I 2 ) Bus data transmission protocol, which dfins a dvic that snds data to th us as a transmittr and a dvic rciving data as a rcivr. ata flow is controlld y a Mastr dvic, which gnrats th srial clock and all R and OP conditions. h 24xx acts as a lav dvic. Mastr and lav altrnat as ithr transmittr or rcivr. I 2 BU PROOO h I 2 us consists of two wirs, and. h two wirs ar connctd to th V supply via pull-up rsistors. Mastr and lav dvics connct to th 2- wir us via thir rspctiv and pins. h transmitting dvic pulls down th lin to transmit a 0 and rlass it to transmit a 1. ata transfr may initiatd only whn th us is not usy (s.. haractristics). uring data transfr, th lin must rmain stal whil th lin is HIGH. n transition whil is HIGH will intrprtd as a R or OP condition (Figur 1). h R condition prcds all commands. It consists of a HIGH to OW transition on whil is HIGH. h R acts as a wak-up call to all rcivrs. snt a R, a lav will not rspond to commands. h OP condition complts all commands. It consists of a OW to HIGH transition on whil is HIGH. vic ddrssing h Mastr initiats data transfr y crating a R condition on th us. h Mastr thn roadcasts an 8-it srial lav addrss. For normal Rad/Writ oprations, th first 4 its of th lav addrss ar fixd at 1010 (h). h nxt 3 its ar usd as programmal addrss its whn cascading multipl dvics and/or as intrnal addrss its. h last it of th slav addrss, R/W, spcifis whthr a Rad (1) or Writ (0) opration is to prformd. h 3 addrss spac xtnsion its ar assignd as illustratd in Figur 2. 2, 1 and 0 must match th stat of th xtrnal addrss pins, and a 10, a 9 and a 8 ar intrnal addrss its. cknowldg ftr procssing th lav addrss, th lav rsponds with an acknowldg () y pulling down th lin during th 9 th clock cycl (Figur 3). h lav will also acknowldg th addrss yt and vry data yt prsntd in Writ mod. In Rad mod th lav shifts out a data yt, and thn rlass th lin during th 9 th clock cycl. s long as th Mastr acknowldgs th data, th lav will continu transmitting. h Mastr trminats th sssion y not acknowldging th last data yt (No) and y issuing a OP condition. Bus timing is illustratd in Figur 4. oc. No. 1115, Rv. B y atalyst miconductor, Inc. haractristics sujct to chang without notic

5 2401/02/04/08/16 Figur 1. R/OP onditions R ONIION OP ONIION Figur 2. lav ddrss Bits R/W 2401 and a 8 R/W a 9 a 8 R/W a10 a9 a8 R/W 2416 Figur 3. cknowldg iming BU R Y (RNMIR) BU R Y (RIVR) FROM MR OUPU FROM RNMIR OUPU FROM RIVR R Y ( t) UP ( t U: ) Figur 4. Bus iming t F t HIGH t R t OW t OW t U: t H: t H: t U: t U:O IN t t H t BUF OU 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 5 oc No. 1115, Rv. B

6 2401/02/04/08/16 WRI OPRION Byt Writ In Byt Writ mod, th Mastr snds th R condition and th lav addrss with th R/W it st to zro to th lav. ftr th lav gnrats an acknowldg, th Mastr snds th yt addrss that is to writtn into th addrss pointr of th 24xx. ftr rciving anothr acknowldg from th lav, th Mastr transmits th data yt to writtn into th addrssd mmory location. h 24xx dvic will acknowldg th data yt and th Mastr gnrats th OP condition, at which tim th dvic gins its intrnal Writ cycl to nonvolatil mmory (Figur 5). Whil this intrnal cycl is in progrss (t WR ), th output will tri-statd and th 24xx will not rspond to any rqust from th Mastr dvic (Figur 6). Hardwar Writ Protction With th WP pin hld HIGH, th ntir mmory is protctd against Writ oprations. If th WP pin is lft floating or is groundd, it has no impact on th opration of th 24xx. h stat of th WP pin is strod on th last falling dg of immdiatly prcding th first data yt (Figur 8). If th WP pin is HIGH during th stro intrval, th 24xx will not acknowldg th data yt and th Writ rqust will rjctd. livry tat h 24xx is shippd rasd, i.., all yts ar FFh. Pag Writ h 24xx writs up to 16 yts of data in a singl writ cycl, using th Pag Writ opration (Figur 7). h Pag Writ opration is initiatd in th sam mannr as th Byt Writ opration, howvr instad of trminating aftr th data yt is transmittd, th Mastr is allowd to snd up to fiftn additional yts. ftr ach yt has n transmittd th 24xx will rspond with an acknowldg and intrnally incrmnts th four low ordr addrss its. h high ordr its that dfin th pag addrss rmain unchangd. If th Mastr transmits mor than sixtn yts prior to snding th OP condition, th addrss countr wraps around to th ginning of pag and prviously transmittd data will ovrwrittn. Onc all sixtn yts ar rcivd and th OP condition has n snt y th Mastr, th intrnal Writ cycl gins. t this point all rcivd data is writtn to th 24xx in a singl writ cycl. cknowldg Polling h acknowldg () polling routin can usd to tak advantag of th typical writ cycl tim. Onc th stop condition is issud to indicat th nd of th host s writ opration, th 24xx initiats th intrnal writ cycl. h polling can initiatd immdiatly. his involvs issuing th start condition followd y th slav addrss for a writ opration. If th 24xx is still usy with th writ opration, No will rturnd. If th 24xx has compltd th intrnal writ opration, an will rturnd and th host can thn procd with th nxt rad or writ opration. oc. No. 1115, Rv. B y atalyst miconductor, Inc. haractristics sujct to chang without notic

7 2401/02/04/08/16 Figur 5. Byt Writ qunc BU IVIY: MR R V R R a7 a0 d7 d0 O P P V * For th 2401 a7 = 0 Figur 6. Writ ycl iming 8 th Bit Byt n t WR OP ONIION R ONIION R Figur 7. Pag Writ qunc BU IVIY: MR R V R R n n+1 n+p O P P V n = 1 P 15 Figur 8. WP iming R a7 a0 d7 d0 tu:wp WP th:wp 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 7 oc No. 1115, Rv. B

8 2401/02/04/08/16 R OPRION Immdiat Rad Upon rciving a lav addrss with th R/W it st to 1, th 24xx will intrprt this as a rqust for data rsiding at th currnt yt addrss in mmory. h 24xx will acknowldg th lav addrss, will immdiatly shift out th data rsiding at th currnt addrss, and will thn wait for th Mastr to rspond. If th Mastr dos not acknowldg th data (No) and thn follows up with a OP condition (Figur 9), th 24xx rturns to tandy mod. lctiv Rad lctiv Rad oprations allow th Mastr dvic to slct at random any mmory location for a rad opration. h Mastr dvic first prforms a dummy writ opration y snding th R condition, slav addrss and yt addrss of th location it wishs to rad. ftr th 24xx acknowldgs th yt addrss, th Mastr dvic rsnds th R condition and th slav addrss, this tim with th R/W it st to on. h 24xx thn rsponds with its acknowldg and snds th rqustd data yt. h Mastr dvic dos not acknowldg th data (No) ut will gnrat a OP condition (Figur 10). quntial Rad If during a Rad sssion, th Mastr acknowldgs th 1 st data yt, thn th 24xx will continu transmitting data rsiding at susqunt locations until th Mastr rsponds with a No, followd y a OP (Figur 11). In contrast to Pag Writ, during quntial Rad th addrss count will automatically incrmnt to and thn wrap-around at nd of mmory (rathr than nd of pag). In th 2401, th intrnal addrss count will not wrap around at th nd of th 128 yt mmory spac. oc. No. 1115, Rv. B y atalyst miconductor, Inc. haractristics sujct to chang without notic

9 2401/02/04/08/16 Figur 9. Immdiat Rad qunc and iming BU IVIY: MR R V R N O O P P V 8 9 8th Bit OU NO OP Figur 10. lctiv Rad qunc BU IVIY: MR R V R R R V R N O O P P V Figur 11. quntial Rad qunc BU IVIY: MR V R N O O P P V n n+1 n+2 n+x 2006 y atalyst miconductor, Inc. haractristics sujct to chang without notic 9 oc No. 1115, Rv. B

10 2401/02/04/08/ MI WI PI IP () B 2 YMBO B MIN NOM MX B _8-_IP_(300P).ps Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J tandard M imnsioning and tolrancing pr NI Y14.5M-1982 oc. No. 1115, Rv. B y atalyst miconductor, Inc. haractristics sujct to chang without notic

11 2401/02/04/08/ MI WI OI (W) 1 h x 45 θ1 1 YMBO 1 1 h MIN NOM 1.27 B MX θ _8-_OI.ps For currnt ap and Rl information, download th PF fil from: Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J spcification M-012 dimnsions y atalyst miconductor, Inc. haractristics sujct to chang without notic 11 oc No. 1115, Rv. B

12 2401/02/04/08/16 8- OP (Y) 8 5 I c 1 /2 1 4 GG PN PIN #1 IN. 2 θ1 I ING PN YMBO 1 2 c 1 θ1 MIN NOM B 0.50 MX For currnt ap and Rl information, download th PF fil from: Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J spcification MO-153. oc. No. 1115, Rv. B y atalyst miconductor, Inc. haractristics sujct to chang without notic

13 2401/02/04/08/16 8-P FN 2X3 PG (VP2) PIN 1 INX R YMBO MIN NOM MX RF YP PIN 1 I 3 x For currnt ap and Rl information, download th PF fil from: FN2X3 (03).ps Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J spcification MO y atalyst miconductor, Inc. haractristics sujct to chang without notic 13 oc No. 1115, Rv. B

14 2401/02/04/08/16 5-ad O-23 () c GUG PN θ YMBO 1 2 c θ MIN NOM B 2.80 B 1.60 B 0.95 B 1.90 B RF 0.25 B MX For currnt ap and Rl information, download th PF fil from: Nots: 1. ll dimnsions ar in millimtrs. 2. omplis with J spcification MO-193. oc. No. 1115, Rv. B y atalyst miconductor, Inc. haractristics sujct to chang without notic

15 2401/02/04/08/16 PG MRING 8-ad PIP 8-ad OI 24XXI FYYWWR 24XXWI FYYWWR I = atalyst miconductor, Inc. XX = vic od (s Marking od tal low) I = mpratur Rang YY = Production Yar WW = Production Wk R = Product Rvision (s Marking od tal low) F = ad Finish 4 = NiPdu 3 = Matt-in I = atalyst miconductor, Inc. XX = vic od (s Marking od tal low) I = mpratur Rang YY = Production Yar WW = Production Wk R = Product Rvision (s Marking od tal low) F = ad Finish 4 = NiPdu 3 = Matt-in 8-ad OP YMRF 24XXI Y = Production Yar M = Production Month R = i Rvision (s Marking od tal low) XX = vic od (s Marking od tal low) I = mpratur Rang WW = Production Wk F = ad Finish 4 = NiPdu 3 = Matt-in vic od XX Marking ods Product Rvision R G G J H G Not: (1) h circl on th packag marking indicats th location of Pin y atalyst miconductor, Inc. haractristics sujct to chang without notic 15 oc No. 1115, Rv. B

16 2401/02/04/08/16 PG MRING 8-Pad FN 5-ad O X X N N N N XXYM Y M XX = N = Y = M = vic od Matt-in NiPdu 2401 Rv. G P 2402 Rv. G R B 2404 Rv. J 2408 Rv. H 2416 Rv. G U Z racal od Production Yar Production Month XX = Y = M = vic od Matt-in NiPdu 2401 Rv. G R MM 2402 Rv. G RB MN 2404 Rv. J R MP 2408 Rv. H R MR 2416 Rv. G R M Production Yar Production Month Nots: (1) h circl on th packag marking indicats th location of Pin 1. (2) For FN and OP packags, th Product Rvision marking is includd in th vic od (XX). oc. No. 1115, Rv. B y atalyst miconductor, Inc. haractristics sujct to chang without notic

17 2401/02/04/08/16 XMP OF ORRING INFORMION Prfix vic # uffix 2416 Y I G 3 ompany I Product Numr Packag : PIP W: OI, J Y: OP VP2: FN : O mpratur Rang I = Industrial (-40 to +85 ) ad Finish G: NiPdu Blank: Matt-in : ap & Rl 3: 3000/Rl Nots: (1) ll packags ar RoH-compliant (ad-fr, Halogn-fr). (2) h standard lad finish is NiPdu pr-platd (PPF) lad frams. (3) h dvic usd in th aov xampl is a 2416YI-G3 (OP, Industrial mpratur, NiPdu, ap & Rl). (4) For additional packag and tmpratur options, plas contact your narst atalyst miconductor als offic y atalyst miconductor, Inc. haractristics sujct to chang without notic 17 oc No. 1115, Rv. B

18 RVIION HIORY at Rvision ommnts 07/18/06 omin 5 data shts into on data sht. 07/31/06 B Updat Packag Marking opyrights, radmarks and Patnts radmarks and rgistrd tradmarks of atalyst miconductor includ ach of th following: PP 2 MiniPot atalyst miconductor has n issud U.. and forign patnts and has patnt applications pnding that protct its products. Y MIONUOR M NO WRRNY, RPRNION OR GURN, XPR OR IMPI, RGRING H UIBIIY OF I PROU FOR NY PRIUR PURPO, NOR H H U OF I PROU WI NO INFRING I INU PROPRY RIGH OR H RIGH OF HIR PRI WIH RP O NY PRIUR U OR PPIION N PIFIY IIM NY N IBIIY RIING OU OF NY UH U OR PPIION, INUING BU NO IMI O, ONQUNI OR ININ MG. atalyst miconductor products ar not dsignd, intndd, or authorizd for us as componnts in systms intndd for surgical implant into th ody, or othr applications intndd to support or sustain lif, or for any othr application in which th failur of th atalyst miconductor product could crat a situation whr prsonal injury or dath may occur. atalyst miconductor rsrvs th right to mak changs to or discontinu any product or srvic dscrid hrin without notic. Products with data shts lald dvanc Information or Prliminary and othr products dscrid hrin may not in production or offrd for sal. atalyst miconductor adviss customrs to otain th currnt vrsion of th rlvant product information for placing ordrs. ircuit diagrams illustrat typical smiconductor applications and may not complt. atalyst miconductor, Inc. orporat Hadquartrs 2975 tndr Way anta lara, Phon: Fax: Pulication #: 1115 Rvison: B Issu dat: 07/31/06

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM 2432 32- I 2 MO rial ROM scription h 2432 is a 32 MO rial ROM dvics, intrnally organizd as 128 pags of 32 yts ach. It faturs a 32 yt pag writ uffr and supports oth th tandard (100 khz) as wll as Fast (400

More information

CAT24C02, CAT24C04, CAT24C08, CAT24C16. EEPROM Serial 2/4/8/16 Kb I 2 C

CAT24C02, CAT24C04, CAT24C08, CAT24C16. EEPROM Serial 2/4/8/16 Kb I 2 C 2402, 2404, 2408, 2416 PROM rial 2/4/8/16 b I 2 scription h 2402/04/08/16 ar 2 b, 4 b, 8 b and 16 b rspctivly I 2 rial PROM dvics organizd intrnally as 16/32/64 and 128 pags rspctivly of 16 byts ach. ll

More information

CAT24C kb CMOS Serial EEPROM, Cascadable

CAT24C kb CMOS Serial EEPROM, Cascadable 24164 16 kb MO rial EEROM, ascadabl Dscription h 24164 is a 16 kb MO cascadabl rial EEROM dvic organizd intrnally as 128 pags of 16 byts ach, for a total of 2048 x 8 bits. h dvic supports both th tandard

More information

128-Kb I 2 C CMOS Serial EEPROM

128-Kb I 2 C CMOS Serial EEPROM 24128 128-b I 2 MO rial EEPROM FEURE upports tandard and Fast I 2 Protocol 1.8V to 5.5V upply Voltag Rang 64-Byt Pag Writ Buffr Hardwar Writ Protction for ntir mmory chmitt riggrs and Nois upprssion Filtrs

More information

64-Kb I 2 C CMOS Serial EEPROM

64-Kb I 2 C CMOS Serial EEPROM 2464 64-b I 2 MO rial EEPROM FEURE upports tandard and Fast I 2 Protocol 1.8 V to 5.5 V upply Voltag Rang 32-Byt Pag Writ Buffr (1) Hardwar Writ Protction for ntir mmory chmitt riggrs and Nois upprssion

More information

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM 2464 64 I 2 MO rial PROM scription h 2464 is a 64 MO rial PROM dvic, intrnally organizd as 8192 words of 8 its ach. It faturs a 32 yt pag writ uffr and supports th tandard (100 khz), Fast (400 khz) and

More information

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM 2464 64 b I 2 MO rial ROM scription h 2464 is a 64 b MO rial ROM dvic, intrnally organizd as 8192 words of 8 bits ach. It faturs a 32 byt pag writ buffr and supports th tandard (100 khz), Fast (400 khz)

More information

SP490/SP491. Full Duplex RS-485 Transceivers. Now Available in Lead Free Packaging

SP490/SP491. Full Duplex RS-485 Transceivers. Now Available in Lead Free Packaging SP490/SP491 Full uplx RS-485 Transcivrs FTURS +5V Only Low Powr icmos rivr/rcivr nal (SP491) RS-485 and RS-422 rivrs/rcivrs Pin Compatil with LTC490 and SN75179 (SP490) Pin Compatil with LTC491 and SN75180

More information

CAT24C kb I 2 C CMOS Serial EEPROM

CAT24C kb I 2 C CMOS Serial EEPROM 24256 256 k I 2 MO rial ROM sription h 24256 is a 256 k rial MO ROM, intrnally organizd as 32,768 words of 8 its ah. It faturs a 64 yt pag writ uffr and supports th tandard (100 khz), Fast (400 khz) and

More information

CAT24C21. 1 kb Dual Mode Serial EEPROM for VESA Plug-and-Play

CAT24C21. 1 kb Dual Mode Serial EEPROM for VESA Plug-and-Play 2421 1 k ual Mod rial ROM for V lug-and-lay sription h 2421 is a 1 k rial MO ROM intrnally organizd as 128 words of 8 its ah. h dvi omplis with th Vido ltronis tandard ssoiation s (V ), isplay ata hannl

More information

SP1001 Series - 8pF 15kV Unidirectional TVS Array

SP1001 Series - 8pF 15kV Unidirectional TVS Array Sris - 8pF kv Unidirctional TVS Array RoHS Pb GRN scription Znr diods fabricatd in a propritary silicon avalanch tchnology protct ach I/O pin to provid a high lvl of protction for lctronic quipmnt that

More information

CAT24C kb I 2 C CMOS Serial EEPROM

CAT24C kb I 2 C CMOS Serial EEPROM 24512 512 k I 2 M rial RM sription h 24512 is a 512 k rial M RM, intrnally organizd as 65,536 words of 8 its ah. It faturs a 128 yt pag writ uffr and supports th tandard (100 khz), Fast (400 khz) and Fast

More information

Precision Micropower 2.5V ShuntVoltage Reference

Precision Micropower 2.5V ShuntVoltage Reference SPX4040 Prcision Micropowr.5V ShuntVoltag Rfrnc FETURES Trimmd Bandgap to 0.5% and % Wid Oprating Currnt 0µ to 5m Extndd Tmpratur Rang: -40 C to 85 C Low Tmpratur Cofficint 00 ppm/ C Rplacmnt in for LM4040

More information

CAT93C46. 1 kb Microwire Serial EEPROM

CAT93C46. 1 kb Microwire Serial EEPROM 1 k Microwir Srial PROM scription Th CT93C46 is a 1 k Srial PROM mmory dvic which is configurd as ithr 64 rgistrs of 16 its (ORG pin at V CC ) or 128 rgistrs of 8 its (ORG pin at GN). ach rgistr can writtn

More information

General Purpose ESD Protection - SP1001 Series. Description. Features. Applications

General Purpose ESD Protection - SP1001 Series. Description. Features. Applications TVS iod Arrays (SPA iods) Gnral Purpos ES Protction - SP00 Sris SP00 Sris - 8pF kv Unidirctional TVS Array RoHS Pb GREEN scription Znr diods fabricatd in a propritary silicon avalanch tchnology protct

More information

CAT93C56, CAT93C57. 2-Kb Microwire Serial CMOS EEPROM. CAT93C57 Not Recommended for New Designs: Replace with CAT93C56

CAT93C56, CAT93C57. 2-Kb Microwire Serial CMOS EEPROM. CAT93C57 Not Recommended for New Designs: Replace with CAT93C56 2-K Microwir Srial CMOS EEPROM CT93C57 Not Rcommndd for Nw signs: Rplac with CT93C56 scription Th CT93C56/57 is a 2 k CMOS Srial EEPROM dvic which is organizd as ithr 128 rgistrs of 16 its (ORG pin at

More information

CAT Kb SPI Serial CMOS EEPROM

CAT Kb SPI Serial CMOS EEPROM 64-Kb SPI Srial CMOS EEPROM Dscription Th CT25640 is a 64 Kb Srial CMOS EEPROM dvic intrnally organizd as 8Kx8 bits. This faturs a 64 byt pag writ buffr and supports th Srial Priphral Intrfac (SPI) protocol.

More information

100-Tap Digitally Programmable Potentiometer (DPP )

100-Tap Digitally Programmable Potentiometer (DPP ) 00-Tap Digitally Programmabl Potntiomtr ( ) CAT FEATURES 00-position linar tapr potntiomtr Non-volatil EEPROM wipr storag 0nA ultra-low standby currnt Singl supply opration:.v.0v Incrmnt up/down srial

More information

32-Tap Digitally Programmable Potentiometer (DPP )

32-Tap Digitally Programmable Potentiometer (DPP ) -Tap Digitally Programmabl Potntiomtr (DPP ) CAT FEATURES -position linar tapr potntiomtr Low powr CMOS tchnology Singl supply opration:.v V Incrmnt up/down srial intrfac Rsistanc valus: 0kΩ, 0kΩ and 00kΩ

More information

Low Capacitance ESD Protection - SP3003 Series. Description. Features. Applications. LCD/ PDP TVs DVD Players Desktops MP3/ PMP Digital Cameras

Low Capacitance ESD Protection - SP3003 Series. Description. Features. Applications. LCD/ PDP TVs DVD Players Desktops MP3/ PMP Digital Cameras TVS iod Arrays (SPA iods) SP3003 Sris 0.65pF iod Array RoHS Pb GREEN scription Th SP3003 has ultra low capacitanc rail-to-rail diods with an additional znr diod fabricatd in a propritary silicon avalanch

More information

CAT24C Kb I 2 C CMOS Serial EEPROM

CAT24C Kb I 2 C CMOS Serial EEPROM 24512 512 I 2 MO rial ROM sription h 24512 is a 512 rial MO ROM, intrnally organizd as 65,536 words of 8 its ah. It faturs a 128 yt pag writ uffr and supports th tandard (100 khz), Fast (400 khz) and Fast

More information

100-Tap Digitally Programmable Potentiometer (DPP )

100-Tap Digitally Programmable Potentiometer (DPP ) 00-Tap igitally Programmabl Potntiomtr ( ) CT FTURS 00-position linar tapr potntiomtr Non-volatil PROM wipr storag 0n ultra-low standby currnt Singl supply opration:.v.0v Incrmnt up/down srial intrfac

More information

CAT25080, CAT Kb and 16-Kb SPI Serial CMOS EEPROM

CAT25080, CAT Kb and 16-Kb SPI Serial CMOS EEPROM 8-Kb and 16-Kb SPI Srial CMOS EEPROM Dscription Th CT25080/25160 ar 8 Kb/16 Kb Srial CMOS EEPROM dvics intrnally organizd as 1024x8/2048x8 bits. Thy fatur a 32 byt pag writ buffr and support th Srial Priphral

More information

20-V N-Channel 1.8-V (G-S) MOSFET

20-V N-Channel 1.8-V (G-S) MOSFET -V N-Channl.8-V (G-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 FEATURE TrnchFET Powr MOFET MICRO FOOT Chipscal Packaging Rducs Footprint Ara

More information

NLX3G17. Triple Non-Inverting Schmitt-Trigger Buffer

NLX3G17. Triple Non-Inverting Schmitt-Trigger Buffer NLX3G7 Tripl Non-Invrting Schmitt-Triggr Buffr Th NLX3G7 MiniGat is an advancd high spd CMOS tripl non invrting Schmitt triggr buffr in ultra small footprint. Th NLX3G7 input and output structurs provid

More information

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT PT24 sris Suprsds data of 200 pr 4 2004 ug 02 PT24 sris FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral

More information

NLX1G10. 3-Input NAND Gate

NLX1G10. 3-Input NAND Gate NG0 3-Input NN Gat Th NG0 is an advancd high spd 3 input MOS NN gat in ultra small footprint. Th NG0 input structurs provid protction whn voltags up to 7.0 V ar applid, rgardlss of th supply voltag. Faturs

More information

N57M tap Digital Potentiometer (POT)

N57M tap Digital Potentiometer (POT) NM tap igital Potntiomtr (POT) scription Th NM is a singl digital POT dsignd as an lctronic rplacmnt for mchanical potntiomtrs and trim pots. Idal for automatd adjustmnts on high volum production lins,

More information

DATA SHEET. PDTC144W series NPN resistor-equipped transistors; R1=47kΩ, R2 = 22 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTC144W series NPN resistor-equipped transistors; R1=47kΩ, R2 = 22 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT Suprsds data of 2004 Mar 2 2004 ug 7 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching

More information

100-Tap Digitally Programmable Potentiometer (DPP )

100-Tap Digitally Programmable Potentiometer (DPP ) 00-Tap Digitally Programmabl Potntiomtr ( ) CAT FEATURES 00-position linar tapr potntiomtr Non-volatil EEPROM wipr storag 0 na ultra-low standby currnt Singl supply opration:. V.0 V Incrmnt up/down srial

More information

Multiple RS-232 Drivers & Receivers

Multiple RS-232 Drivers & Receivers Multipl S232 rivrs & ivrs Produt sription Th ar monolithi dvi ontaining 3 indpndnt drivs and 5 rivrs. Ths ar dsignd to intrfa twn dat trminal quipmnt and dat ommuniation quipmnt as dsignd y I232. Faturs

More information

256K (32K x 8) OTP EPROM AT27C256R

256K (32K x 8) OTP EPROM AT27C256R Faturs Fast Rad Accss Tim 45 ns Low-Powr CMOS Opration 100 µa Max Standby 20 ma Max Activ at 5 MHz JEDEC Standard Packags 28-lad PDIP 32-lad PLCC 28-lad TSOP and SOIC 5V ± 10% Supply High Rliability CMOS

More information

32-Tap Digitally Programmable Potentiometer (DPP )

32-Tap Digitally Programmable Potentiometer (DPP ) -Tap Digitally Programmabl Potntiomtr (DPP ) CAT FEATURES -position linar tapr potntiomtr Low powr CMOS tchnology Singl supply opration:.v V Incrmnt up/down srial intrfac Rsistanc valus: 0kΩ, 0kΩ and 00kΩ

More information

NLX2G00. Dual 2-Input NAND Gate

NLX2G00. Dual 2-Input NAND Gate ual 2-Input NN Gat Th NLX2G00 is an advancd high-spd dual 2-input CMOS NN gat in ultra-small footprint. Th NLX2G00 input structurs provid protction whn voltags up to 7.0 volts ar applid, rgardlss of th

More information

NLU2G16. Dual Non-Inverting Buffer

NLU2G16. Dual Non-Inverting Buffer NLU2G ual Non-Invrting Buffr Th NLU2G MiniGat is an advancd high spd CMOS dual non invrting buffr in ultra small footprint. Th NLU2G input and output structurs provid protction whn voltags up to 7.0 V

More information

NLU1GT32. Single 2-Input OR Gate, TTL Level. LSTTL Compatible Inputs

NLU1GT32. Single 2-Input OR Gate, TTL Level. LSTTL Compatible Inputs NUGT32 Singl 2-Input OR Gat, TT vl STT Compatibl Inputs Th NUGT32 MiniGat is an advancd CMOS high spd 2 input OR gat in ultra small footprint. Th dvic input is compatibl with TT typ input thrsholds and

More information

NLU2G17. Dual Non-Inverting Schmitt-Trigger Buffer

NLU2G17. Dual Non-Inverting Schmitt-Trigger Buffer NLU2G7 ual Non-Invrting Schmitt-Triggr Buffr Th NLU2G7 MiniGat is an advancd high spd CMOS dual non invrting Schmitt triggr buffr in ultra small footprint. Th NLU2G7 input and output structurs provid protction

More information

NLU1GT86. Single 2-Input Exclusive OR Gate, TTL Level. LSTTL Compatible Inputs

NLU1GT86. Single 2-Input Exclusive OR Gate, TTL Level. LSTTL Compatible Inputs NUGT8 Singl 2-Input xclusiv OR Gat, TT vl STT Compatibl Inputs Th NUGT8 MiniGat is an advancd CMOS high spd 2 input xclusiv OR gat in ultra small footprint. Th dvic input is compatibl with TT typ input

More information

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3 N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low Gat Charg R DS(ON) 25mΩ G RoHS-compliant, halogn-fr I D 28A S BV DSS 30V Dscription Advancd Powr MOSFETs from

More information

Ph.D. students Department of Electronics and Telecommunications, Politecnico di Torino

Ph.D. students Department of Electronics and Telecommunications, Politecnico di Torino 01OPIIU Il softwar libro Dvic-to-dvic communications: Wi-Fi Dirct Laura Cocona s189195 Carlo Borgiattino s189149 Ph.D. studnts Dpartmnt of Elctronics and Tlcommunications, Politcnico di Torino Rport for

More information

ECE602 Exam 1 April 5, You must show ALL of your work for full credit.

ECE602 Exam 1 April 5, You must show ALL of your work for full credit. ECE62 Exam April 5, 27 Nam: Solution Scor: / This xam is closd-book. You must show ALL of your work for full crdit. Plas rad th qustions carfully. Plas chck your answrs carfully. Calculators may NOT b

More information

G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.

G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0. N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low On-rsistanc R DS(ON) 36mΩ G RoHS-compliant, halogn-fr I D 25A S BV DSS 6V Dscription Advancd Powr MOSFETs from

More information

2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK. Outline. Base UMT3. Base. Package size (mm) Taping code

2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK. Outline. Base UMT3. Base. Package size (mm) Taping code 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K PNP 50m -50V Gnral Purpos Transistors Datasht Outlin Paramtr V CO I C Valu 50V 150m VMT3 MT3F Collctor Bas Bas mittr mittr Collctor Faturs 1) Gnral

More information

CAT25010, CAT25020, CAT Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM

CAT25010, CAT25020, CAT Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM CT25010, CT25020, CT25040 1-K, 2-K and 4-K SPI Srial CMOS PROM sription Th CT25010/20/40 ar 1 K/2 K/4 K Srial CMOS PROM dvis intrnally organizd as 128x8/256x8/512x8 its. Thy fatur a 16 yt pag writ uffr

More information

REFLECTIVE OBJECT SENSOR

REFLECTIVE OBJECT SENSOR QR4 PACKAG DIMNSIONS + + D.6 (6.) D + +.49 (.5). (8.4).97 (5.) 4.4 (8.) SCHMATIC.8 (.).8 (.46) SQ. (4X) 4. (.54).6 (9.) NOTS:. Dimensions for all drawings are in inches.. Tolerance of ±. on all non-nominal

More information

DUAL P-CHANNEL MATCHED MOSFET PAIR

DUAL P-CHANNEL MATCHED MOSFET PAIR DVNCD INR DVICS, INC. D1102/D1102B D1102 DU P-CHNN MTCHD MOSFT PIR GNR DSCRIPTION Th D1102 is a monolithic dual P-channl matchd transistor pair intndd for a road rang of analog applications. Ths nhancmntmod

More information

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT PT24 sris Suprsds data of 200 pr 4 2004 ug 02 PT24 sris FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral

More information

DATA SHEET. PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT Suprsds data of 2004 pr 06 2004 ug 6 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching

More information

DATA SHEET. PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS ISCRT SMICONUCTORS T SHT Suprsds data of 200 Sp 0 2004 ug 7 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching and

More information

2/12/2013. Overview. 12-Power Transmission Text: Conservation of Complex Power. Introduction. Power Transmission-Short Line

2/12/2013. Overview. 12-Power Transmission Text: Conservation of Complex Power. Introduction. Power Transmission-Short Line //03 Ovrviw -owr Transmission Txt: 4.6-4.0 ECEGR 45 owr ystms Consrvation of Complx owr hort in owr Transmission owr Transmission isualization Radial in Mdium and ong in owr Transmission oltag Collaps

More information

MA 262, Spring 2018, Final exam Version 01 (Green)

MA 262, Spring 2018, Final exam Version 01 (Green) MA 262, Spring 218, Final xam Vrsion 1 (Grn) INSTRUCTIONS 1. Switch off your phon upon ntring th xam room. 2. Do not opn th xam booklt until you ar instructd to do so. 3. Bfor you opn th booklt, fill in

More information

Design Guidelines for Quartz Crystal Oscillators. R 1 Motional Resistance L 1 Motional Inductance C 1 Motional Capacitance C 0 Shunt Capacitance

Design Guidelines for Quartz Crystal Oscillators. R 1 Motional Resistance L 1 Motional Inductance C 1 Motional Capacitance C 0 Shunt Capacitance TECHNICAL NTE 30 Dsign Guidlins for Quartz Crystal scillators Introduction A CMS Pirc oscillator circuit is wll known and is widly usd for its xcllnt frquncy stability and th wid rang of frquncis ovr which

More information

Random Access Techniques: ALOHA (cont.)

Random Access Techniques: ALOHA (cont.) Random Accss Tchniqus: ALOHA (cont.) 1 Exampl [ Aloha avoiding collision ] A pur ALOHA ntwork transmits a 200-bit fram on a shard channl Of 200 kbps at tim. What is th rquirmnt to mak this fram collision

More information

Physical Organization

Physical Organization Lctur usbasd symmtric multiprocssors (SM s): combin both aspcts Compilr support? rchitctural support? Static and dynamic locality of rfrnc ar critical for high prformanc M I M ccss to local mmory is usually

More information

Item. Recommended LC Driving Voltage for Standard Temp. Modules

Item. Recommended LC Driving Voltage for Standard Temp. Modules AV2020 20x2 Character 5x7 dots with cursor 1/16 duty +5V single supply Built in Controller (KS0066 or quivalent) B/L driven by pin1 and 2, 15 and 16 or A,K Pin Assignment No. Symbol Function 1 Vss Gnd,

More information

First derivative analysis

First derivative analysis Robrto s Nots on Dirntial Calculus Chaptr 8: Graphical analysis Sction First drivativ analysis What you nd to know alrady: How to us drivativs to idntiy th critical valus o a unction and its trm points

More information

7WB Bit Bus Switch. The 7WB3306 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3306 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch Th WB3306 is an advancd high spd low powr 2 bit bus switch in ultra small footprints. Faturs High Spd: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connction Btwn 2 Ports Powr Down Protction

More information

Chapter 6 Folding. Folding

Chapter 6 Folding. Folding Chaptr 6 Folding Wintr 1 Mokhtar Abolaz Folding Th folding transformation is usd to systmatically dtrmin th control circuits in DSP architctur whr multipl algorithm oprations ar tim-multiplxd to a singl

More information

IXTT3N200P3HV IXTH3N200P3HV

IXTT3N200P3HV IXTH3N200P3HV Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous

More information

Definition1: The ratio of the radiation intensity in a given direction from the antenna to the radiation intensity averaged over all directions.

Definition1: The ratio of the radiation intensity in a given direction from the antenna to the radiation intensity averaged over all directions. Dirctivity or Dirctiv Gain. 1 Dfinition1: Dirctivity Th ratio of th radiation intnsity in a givn dirction from th antnna to th radiation intnsity avragd ovr all dirctions. Dfinition2: Th avg U is obtaind

More information

512K (64K x 8) OTP EPROM AT27C512R

512K (64K x 8) OTP EPROM AT27C512R Faturs Fast Rad Accss Tim 45 ns Low-Powr CMOS Opration 100 µa Max Standby 20 ma Max Activ at 5 MHz JEDEC Standard Packags 28-lad PDIP 32-lad PLCC 28-lad TSOP and SOIC 5V ± 10% Supply High-Rliability CMOS

More information

Searching Linked Lists. Perfect Skip List. Building a Skip List. Skip List Analysis (1) Assume the list is sorted, but is stored in a linked list.

Searching Linked Lists. Perfect Skip List. Building a Skip List. Skip List Analysis (1) Assume the list is sorted, but is stored in a linked list. 3 3 4 8 6 3 3 4 8 6 3 3 4 8 6 () (d) 3 Sarching Linkd Lists Sarching Linkd Lists Sarching Linkd Lists ssum th list is sortd, but is stord in a linkd list. an w us binary sarch? omparisons? Work? What if

More information

MCE503: Modeling and Simulation of Mechatronic Systems Discussion on Bond Graph Sign Conventions for Electrical Systems

MCE503: Modeling and Simulation of Mechatronic Systems Discussion on Bond Graph Sign Conventions for Electrical Systems MCE503: Modling and Simulation o Mchatronic Systms Discussion on Bond Graph Sign Convntions or Elctrical Systms Hanz ichtr, PhD Clvland Stat Univrsity, Dpt o Mchanical Enginring 1 Basic Assumption In a

More information

Problem Set #2 Due: Friday April 20, 2018 at 5 PM.

Problem Set #2 Due: Friday April 20, 2018 at 5 PM. 1 EE102B Spring 2018 Signal Procssing and Linar Systms II Goldsmith Problm St #2 Du: Friday April 20, 2018 at 5 PM. 1. Non-idal sampling and rcovry of idal sampls by discrt-tim filtring 30 pts) Considr

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notic ar Customr, On 7 Fbruary 207 th formr NXP Standard Product businss bcam a nw company with th tradnam Nxpria. Nxpria is an industry lading supplir of iscrt, Logic and PowrMOS smiconductors

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notic ar Customr, On 7 Fbruary 207 th formr NXP Standard Product businss bcam a nw company with th tradnam Nxpria. Nxpria is an industry lading supplir of iscrt, Logic and PowrMOS smiconductors

More information

QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD )

QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD ) TM VN INR VI, IN. P 8/ N B QU/U TRIY PROGRMMB NOG VI (P ) GNR RIPTION 8/ ar monolithic quad/dual P (lctrically Programmal nalog vic) N-channl MOFTs with lctrically adjustal thrshold (turn-on) voltag. Th

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notic ar Customr, On 7 Fbruary 207 th formr NXP Standard Product businss bcam a nw company with th tradnam Nxpria. Nxpria is an industry lading supplir of iscrt, Logic and PowrMOS smiconductors

More information

General Notes About 2007 AP Physics Scoring Guidelines

General Notes About 2007 AP Physics Scoring Guidelines AP PHYSICS C: ELECTRICITY AND MAGNETISM 2007 SCORING GUIDELINES Gnral Nots About 2007 AP Physics Scoring Guidlins 1. Th solutions contain th most common mthod of solving th fr-rspons qustions and th allocation

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET i5y N-Channl -V (-) MOFE PROUC UMMARY V (V) R (on) (Ω) I (A) a Q g (yp.).38 at V G = V 33 37.5 nc.5 at V G =.5 V 3 FEAURE Halogn-fr According to IEC 29-2-2 Availabl rnchfe Gn II Powr MOFE % R g and UI

More information

ph People Grade Level: basic Duration: minutes Setting: classroom or field site

ph People Grade Level: basic Duration: minutes Setting: classroom or field site ph Popl Adaptd from: Whr Ar th Frogs? in Projct WET: Curriculum & Activity Guid. Bozman: Th Watrcours and th Council for Environmntal Education, 1995. ph Grad Lvl: basic Duration: 10 15 minuts Stting:

More information

TEMASEK JUNIOR COLLEGE, SINGAPORE. JC 2 Preliminary Examination 2017

TEMASEK JUNIOR COLLEGE, SINGAPORE. JC 2 Preliminary Examination 2017 TEMASEK JUNIOR COLLEGE, SINGAPORE JC Prliminary Eamination 7 MATHEMATICS 886/ Highr 9 August 7 Additional Matrials: Answr papr hours List of Formula (MF6) READ THESE INSTRUCTIONS FIRST Writ your Civics

More information

Differential Equations

Differential Equations Prfac Hr ar m onlin nots for m diffrntial quations cours that I tach hr at Lamar Univrsit. Dspit th fact that ths ar m class nots, th should b accssibl to anon wanting to larn how to solv diffrntial quations

More information

Aim To manage files and directories using Linux commands. 1. file Examines the type of the given file or directory

Aim To manage files and directories using Linux commands. 1. file Examines the type of the given file or directory m E x. N o. 3 F I L E M A N A G E M E N T Aim To manag ils and dirctoris using Linux commands. I. F i l M a n a g m n t 1. il Examins th typ o th givn il or dirctory i l i l n a m > ( o r ) < d i r c t

More information

Three-wire Serial EEPROMs AT93C46 AT93C56 (1) AT93C66 (2)

Three-wire Serial EEPROMs AT93C46 AT93C56 (1) AT93C66 (2) Faturs Low-voltag and Standard-voltag Opration 2.7 (V CC = 2.7V to 5.5V).8 (V CC =.8V to 5.5V) Usr-slctabl Intrnal Organization K: 28 x 8 or 64 x 6 2K: 256 x 8 or 28 x 6 4K: 52 x 8 or 256 x 6 Thr-wir Srial

More information

P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET i4465ay PChannl.8V (G) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) b Q g (Typ.) 9 at V G = 4.5 V 3.7 8 at V G = 2.5 V 2.4 55 nc 6 at V G =.8 V FEATURE Halognfr According to IEC 624922 Availabl TrnchFET

More information

IXBT22N300HV IXBH22N300HV

IXBT22N300HV IXBH22N300HV High Voltag, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advanc Tchnical Information IXBTNHV IXBHNHV V CS = V = A V C(sat). TO-6HV (IXBT) Symbol Tst Conditions Maximum Ratings V CS = 5 C to

More information

4. (5a + b) 7 & x 1 = (3x 1)log 10 4 = log (M1) [4] d = 3 [4] T 2 = 5 + = 16 or or 16.

4. (5a + b) 7 & x 1 = (3x 1)log 10 4 = log (M1) [4] d = 3 [4] T 2 = 5 + = 16 or or 16. . 7 7 7... 7 7 (n )0 7 (M) 0(n ) 00 n (A) S ((7) 0(0)) (M) (7 00) 8897 (A). (5a b) 7 7... (5a)... (M) 7 5 5 (a b ) 5 5 a b (M)(A) So th cofficint is 75 (A) (C) [] S (7 7) (M) () 8897 (A) (C) [] 5. x.55

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i443ay PChannl 3V () MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).75 at V G = V 5 3. at V G = 4.5 V.3 O8 FEATURE Halognfr According to IEC 649 Availabl TrnchFET Powr MOFET APPLICATION Notbook Load witch

More information

Continuous probability distributions

Continuous probability distributions Continuous probability distributions Many continuous probability distributions, including: Uniform Normal Gamma Eponntial Chi-Squard Lognormal Wibull EGR 5 Ch. 6 Uniform distribution Simplst charactrizd

More information

CAT93C86B. 16-Kb Microwire Serial EEPROM

CAT93C86B. 16-Kb Microwire Serial EEPROM 16-K Mirowir Srial PROM sription Th CT93C86B is a 16 K Srial PROM mmory dvi whih is onfigurd as ithr rgistrs of 16 its (ORG pin at V CC ) or 8 its (ORG pin at GN). ah rgistr an writtn (or rad) srially

More information

Computing and Communications -- Network Coding

Computing and Communications -- Network Coding 89 90 98 00 Computing and Communications -- Ntwork Coding Dr. Zhiyong Chn Institut of Wirlss Communications Tchnology Shanghai Jiao Tong Univrsity China Lctur 5- Nov. 05 0 Classical Information Thory Sourc

More information

EEO 401 Digital Signal Processing Prof. Mark Fowler

EEO 401 Digital Signal Processing Prof. Mark Fowler EEO 401 Digital Signal Procssing Prof. Mark Fowlr Dtails of th ot St #19 Rading Assignmnt: Sct. 7.1.2, 7.1.3, & 7.2 of Proakis & Manolakis Dfinition of th So Givn signal data points x[n] for n = 0,, -1

More information

Higher order derivatives

Higher order derivatives Robrto s Nots on Diffrntial Calculus Chaptr 4: Basic diffrntiation ruls Sction 7 Highr ordr drivativs What you nd to know alrady: Basic diffrntiation ruls. What you can larn hr: How to rpat th procss of

More information

20 V N-Channel 1.8 V (G-S) MOSFET

20 V N-Channel 1.8 V (G-S) MOSFET V N-Channl.8 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Bump id Viw 3 4.37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 G MICRO FOOT Backsid Viw 84 xxx FEATURE TrnchFET Powr MOFET MICRO

More information

Unfired pressure vessels- Part 3: Design

Unfired pressure vessels- Part 3: Design Unfird prssur vssls- Part 3: Dsign Analysis prformd by: Analysis prformd by: Analysis vrsion: According to procdur: Calculation cas: Unfird prssur vssls EDMS Rfrnc: EF EN 13445-3 V1 Introduction: This

More information

Chip Monolithic Ceramic Capacitor

Chip Monolithic Ceramic Capacitor his is th PDF fil of catalog No.C0E-. No.C0E.pdf.. Chip Monolithic Cramic Capacitor CHIP MONOIHIC CERAMIC CAPACIOR www.alkon.nt + () 0-0- Murata Manufacturing Co., td. Cat.No.C0E- his is th PDF fil of

More information

Difference -Analytical Method of The One-Dimensional Convection-Diffusion Equation

Difference -Analytical Method of The One-Dimensional Convection-Diffusion Equation Diffrnc -Analytical Mthod of Th On-Dimnsional Convction-Diffusion Equation Dalabav Umurdin Dpartmnt mathmatic modlling, Univrsity of orld Economy and Diplomacy, Uzbistan Abstract. An analytical diffrncing

More information

Image Filtering: Noise Removal, Sharpening, Deblurring. Yao Wang Polytechnic University, Brooklyn, NY11201

Image Filtering: Noise Removal, Sharpening, Deblurring. Yao Wang Polytechnic University, Brooklyn, NY11201 Imag Filtring: Nois Rmoval, Sharpning, Dblurring Yao Wang Polytchnic Univrsity, Brooklyn, NY http://wb.poly.du/~yao Outlin Nois rmoval by avraging iltr Nois rmoval by mdian iltr Sharpning Edg nhancmnt

More information

What are those βs anyway? Understanding Design Matrix & Odds ratios

What are those βs anyway? Understanding Design Matrix & Odds ratios Ral paramtr stimat WILD 750 - Wildlif Population Analysis of 6 What ar thos βs anyway? Undrsting Dsign Matrix & Odds ratios Rfrncs Hosmr D.W.. Lmshow. 000. Applid logistic rgrssion. John Wily & ons Inc.

More information

Addition of angular momentum

Addition of angular momentum Addition of angular momntum April, 0 Oftn w nd to combin diffrnt sourcs of angular momntum to charactriz th total angular momntum of a systm, or to divid th total angular momntum into parts to valuat th

More information

The Transmission Line Wave Equation

The Transmission Line Wave Equation 1//5 Th Transmission Lin Wav Equation.doc 1/6 Th Transmission Lin Wav Equation Q: So, what functions I (z) and V (z) do satisfy both tlgraphr s quations?? A: To mak this asir, w will combin th tlgraphr

More information

SPI Serial EEPROMs AT25128 AT Features. Description. Pin Configurations. 128K (16,384 x 8) 256K (32,768 x 8)

SPI Serial EEPROMs AT25128 AT Features. Description. Pin Configurations. 128K (16,384 x 8) 256K (32,768 x 8) Faturs Srial Priphral Intrfac (SPI) Compatibl Supports SPI Mods 0 (0,0) and 3 (,) Low-voltag and Standard-voltag Opration.7 (V CC =.7V to 5.5V).8 (V CC =.8V to 5.5V) 3 MHz Clock Rat 64-byt Pag Mod and

More information

Tap Changer Type MHZ Specification, Assembly and Materials

Tap Changer Type MHZ Specification, Assembly and Materials Tap Changr Typ MH Spcification, ssmbly and Matrials Dscriptions Gnral Spcifications Rmarks availabl in on, two or thr phas application multi layr typs upon rqust shaft lngth availabl in variabl sizs driving

More information

Answer Homework 5 PHA5127 Fall 1999 Jeff Stark

Answer Homework 5 PHA5127 Fall 1999 Jeff Stark Answr omwork 5 PA527 Fall 999 Jff Stark A patint is bing tratd with Drug X in a clinical stting. Upon admiion, an IV bolus dos of 000mg was givn which yildd an initial concntration of 5.56 µg/ml. A fw

More information

Transitional Probability Model for a Serial Phases in Production

Transitional Probability Model for a Serial Phases in Production Jurnal Karya Asli Lorkan Ahli Matmatik Vol. 3 No. 2 (2010) pag 49-54. Jurnal Karya Asli Lorkan Ahli Matmatik Transitional Probability Modl for a Srial Phass in Production Adam Baharum School of Mathmatical

More information

Outline. Thanks to Ian Blockland and Randy Sobie for these slides Lifetimes of Decaying Particles Scattering Cross Sections Fermi s Golden Rule

Outline. Thanks to Ian Blockland and Randy Sobie for these slides Lifetimes of Decaying Particles Scattering Cross Sections Fermi s Golden Rule Outlin Thanks to Ian Blockland and andy obi for ths slids Liftims of Dcaying Particls cattring Cross ctions Frmi s Goldn ul Physics 424 Lctur 12 Pag 1 Obsrvabls want to rlat xprimntal masurmnts to thortical

More information

BINOMIAL COEFFICIENTS INVOLVING INFINITE POWERS OF PRIMES. 1. Statement of results

BINOMIAL COEFFICIENTS INVOLVING INFINITE POWERS OF PRIMES. 1. Statement of results BINOMIAL COEFFICIENTS INVOLVING INFINITE POWERS OF PRIMES DONALD M. DAVIS Abstract. If p is a prim and n a positiv intgr, lt ν p (n dnot th xponnt of p in n, and u p (n n/p νp(n th unit part of n. If α

More information

CAT93C46B. 1-Kb Microwire Serial EEPROM

CAT93C46B. 1-Kb Microwire Serial EEPROM 1-K Mirowir Srial PROM sription Th CT93C46B is a 1 K Srial PROM mmory dvi whih is onfigurd as ithr 64 rgistrs of 16 its (ORG pin at V CC ) or 128 rgistrs of 8 its (ORG pin at GN). ah rgistr an writtn (or

More information

Y 0. Standing Wave Interference between the incident & reflected waves Standing wave. A string with one end fixed on a wall

Y 0. Standing Wave Interference between the incident & reflected waves Standing wave. A string with one end fixed on a wall Staning Wav Intrfrnc btwn th incint & rflct wavs Staning wav A string with on n fix on a wall Incint: y, t) Y cos( t ) 1( Y 1 ( ) Y (St th incint wav s phas to b, i.., Y + ral & positiv.) Rflct: y, t)

More information