Chip Monolithic Ceramic Capacitor

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1 his is th PDF fil of catalog No.C0E-. No.C0E.pdf.. Chip Monolithic Cramic Capacitor CHIP MONOIHIC CERAMIC CAPACIOR + () 0-0- Murata Manufacturing Co., td. Cat.No.C0E-

2 his is th PDF fil of catalog No.C0E-. No.C0E.pdf.. MONOIHIC CERAMIC CAPACIOR Soldr Coatd GRH/RPN00 Sris ; Hi and High-powr!FEAURES. h dilctric is composd of low dilctric loss cramics. his sris is prfctly suitd to high-frquncy applications (VHF-microwav band).. h sris is ultraminiatur, yt has a high-powr capacity. his is th bst capacitor availabl for transmittr and amplifir circuits such as thos in broadcasting quipmnt and mobil bas stations.. GRH0 typ is dsignd for both flow and rflow soldring and GRH typ is dsignd for rflow soldring.. GRH typ capacitors xhibit bttr soldrability and lowr soldr laching bcaus of its nickl barrird trminations.. RPN typ capacitors withstand high tmpraturs bcaus ribbon lads ar attachd with silvr past.. RPN typ capacitors ar asily soldrd and spcially wll suitd in applications whr only a soldring iron can b usd.!appicaion High-frquncy and high-powr circuits!par NUMBERING (*Plas spcify th part numbr whn ordring) (Ex.) GRH C0G J 00 q q wmpratur Charactristics r olranc qype AND DIMENSIONS Chip (GRH) w r t y, Microstrip (RPN) GRH0 GRH RPN0 RPN R , tratd Voltag ymurata's Control No. upackaging, Dimnsions (mm) w PB u Silvr ribbon lads (in mm) 0. to..0 to. Dimnsions (mm). max..0 max R.0 min..0.0 w wemperaure CHARACERISICS mp. Coff. C0G 00ppm/D CAPACIANCE (Ex.) (pf) 00. R. rcapaciance OERANCE Cap. tolranc Applid traed VOAGE upackaging CODE PB P C 0.pF CVpF mp. Rang YD to D 0 D 0.pF pffcv0pf Rfrnc mp. D (pf) 0 J % 0pFFC DC Ratd voltag (V) Packaging Bulk packaging in a bag ap carrir packaging (for only GRH typ)!marking Marking is omittd from th GRH0, GRH and RPN0. h thr digit cod is markd on th RPN sris. + () 0-0- R (.pf) 00 (0pF) 0 (00pF)

3 his is th PDF fil of catalog No.C0E-. No.C0E.pdf..!CAPACIANCE RANGE ABE Cap. (pf) , 000. C. Volt. C0G GRH0/RPN0 GRH/RPN () 0-0-!CAPACIANCE OERANCE pf and blow C : 0.pF Ovr pf, 0pF and blow.... D : 0.pF Mor than 0pF J : %!PACKAGING YPES/UANIY GRH0 GRH RPN0 RPN Bulk (pcs./bag),000,000,00,0 aping (pcs./φmm/rl),000,

4 his is th PDF fil of catalog No.C0E-. No.C0E.pdf..!SPECIFICAIONS AND ES MEHODS No. st Mthod 0 mpratur Compnsating Oprating mpratur Rang Ratd Voltag Dimnsions Insulation D () D mpratur Charactristics Vibration Variation Rat mpratur Cofficint YD to D S th prvious pags. No dfcts or abnormalitis. ithin th spcifid dimnsion. No dfcts or abnormalitis. 0pFFCV,0pF :,000,000MΩ min. 0pFFCV,000pF :,00,000MΩ min. 0pFFCV,0pF :,00,000MΩ min. 0pFFCV,000pF :,0,000MΩ min. ithin th spcifid tolranc. 0pF F CV,0pF : U0,000 0pFFCV,0pF : U,000 0pFFCV,000pF : U,000 C : Nominal (pf) ithin th spcifid tolranc. (abl A-) ithin th spcifid tolranc. (abl A-) ithin 0.% or 0.0pF Drift Adhsiv Strngth of rmination (for chip typ) rminal Strngth nsil Strngth (for microstrip typ) Bnding Strngth of lad wir trminal (for microstrip typ) No rmoval of th trminations or othr dfcts shall occur. Capacitor shall not b brokn or damagd. ad wir shall not b cut or brokn. No dfcts or abnormalitis. ithin th spcifid tolranc. Satisfis th initial valu. 0pFFCV,0pF : U0,000 0pFFCV,0pF : U,000 0pFFCV,000pF : U,000 C : Nominal (pf) h ratd voltag is dfind as th maximum voltag which may b applid continuously to th capacitor. hn AC voltag is suprimposd on DC voltag, V P-P or V O-P, whichvr is largr, shall b maintaind within th ratd voltag rang. Visual inspction. Using caliprs. No failur shall b obsrvd whn 0% of th ratd voltag is applid btwn th trminations for to sconds, providd th charg/discharg currnt is lss than 0mA. h insulation rsistanc shall b masurd with a DC voltag not xcding th ratd voltag at D and D standard humidity and within minuts of charging. h capacitanc/ shall b masurd at D at th frquncy and voltag shown in th tabl. Char. Frquncy Voltag h tmpratur cofficint is dtrmind using th capacitanc masurd in stp as a rfrnc. hn cycling th tmpratur squntially from stp through, th capacitanc shall b within th spcifid tolranc for th tmpratur cofficint and capacitanc chang as abl A-. h capacitanc drift is calculatd by dividing th diffrncs btwn th maximum and minimum masurd valus in th stp, and by th cap. valu in stp. h capacitanc chang shall b masurd aftr min. at ach spcifid tmpratur stag. Stp mpratur (D) -- Soldr th capacitor to th tst jig (alumina substrat) shown in Fig. k using soldr containing.% silvr. h soldring shall b don ithr with an iron or in furnac and b conductd with car so th soldring is uniform and fr of dfcts such as hat shock. hn apply a 0N forc in th dirction of th arrow. h capacitor body is fixd and a load is applid gradually in th axial dirction until its valu rachs 0N (N for RPN0). Position th main body of th capacitor so th lad wir trminal is prpndicular, and load.n to th lad wir trminal. Bnd th main body by 0 dgrs, bnd back to original position, bnd 0 dgrs in th rvrs dirction, and thn bnd back to original position. Soldr th capacitor to th tst jig (alumina substrat) shown in Fig.k using soldr containing.% silvr. h soldring shall b don ithr with an iron or using th rflow mthod and shall b conductd with car so th soldring is uniform and fr of dfcts such as hat shock.h capacitor shall b subjctd to a simpl harmonic motion having a total amplitud of.mm, th frquncy bing varid uniformly btwn th approximat limits of 0 and Hz. h frquncy rang, from 0 to Hz and rturn to 0Hz, shall b travrsd in approximatly minut. his motion shall b applid for a priod of hours in ach mutually prpndicular dirctions (total of hours). Fig. k C0G (,000pF and blow) 0.MHz 0. to Vr.m.s. 0N Alumina substrat + () 0-0- Fig. k Alumina substrat Soldr rsist Ag/Pd 0

5 his is th PDF fil of catalog No.C0E-. No.C0E.pdf.. No. st Mthod Soldrability of rmination to Soldring Hat mpratur Cycl High mpratur oad % of th trminations is to b soldrd vnly and continuously. ithin.% or 0.pF 0pFFCV,0pF : U0,000 0pFFCV,0pF : U,000 0pFFCV,000pF : U,000 Mor than 0% of th initial spcification valu at D. No failur C : Nominal (pf) ithin % or 0.pF 0pFFCV,0pF : U0,000 0pFFCV,0pF : U,000 0pFFCV,000pF : U,000 Mor than 0% of th initial spcification valu at D. No failur C : Nominal (pf) ithin % or 0.pF 0pFFCV,0pF : U0,000 0pFFCV,0pF : U,000 0pFFCV,000pF : U,000 Mor than 0% of th initial spcification valu at D. C : Nominal (pf) ithin.% or 0.pF 0pFFCV,0pF : U0,000 0pFFCV,0pF : U,000 0pFFCV,000pF : U,000 Mor than 0% of th initial spcification valu at D. C : Nominal (pf) Immrs th capacitor in a solution of thanol (JIS-K-0) and rosin (JIS-K-0) (% rosin in wight proportion). Prhat at 0 to 0D for 0 to 0 sconds. Aftr prhating immrs in soldr containing.% silvr for 0. sconds at 0D. h dipping dpth for microstrip typ capacitors is up to mm from th root of th trminal. Prhat th capacitor at 0 to 00D for minuts and thn at 0 to 00D for minuts. Immrs in soldr containing.% silvr for 0. sconds at 0D. St at room tmpratur for hours, thn masur. h dipping dpth for microstrip typ capacitors is up to mm from th root of th trminal. Fix th capacitor to th supporting jig in th sam mannr and undr th sam conditions as (). Prform th fiv cycls according to th four hat tratmnts listd in th following tabl. hn, rpat twic th succssiv cycls of immrsion, ach + cycl consisting of immrsion in a frsh watr at - 0 D for minuts and immrsion in a saturatd uquous solution of salt at 0D for minuts. h cpapcitor is promptly washd with running watr, drid with a dry cloth, and allowd to sit at room tmpratur for hours. Stp mp. (D) +0 Yaaa - Room mp. + aaa - 0 Room mp. im (min.) 0 to 0 to Apply th -hour hat (-0 to +D) and humidity (0 to %) tratmnt shown blow, 0 conscutiv tims. Rmov, st for hours at room tmpratur, and masur. mparatur D 0-% 0-% 0 0-% 0-% 0-% D 0 Initial masurmnt 0 Applid voltag 0Vdc - -0 On cycl hours + () 0-0- abl A Hours Apply 0% of th ratd voltag for,000 hours at D. Rmov and st for hours at room tmpratur, thn masur. h charg/discharg currnt is lss than 0mA. from D Valu (%) mp. Coff. Char. (ppm/d) Not YD Y0D Y0D Max. Min. Max. Min. Max. Min. C0G Y Y0. 0. Y0. Not : Nominal valus dnot th tmpratur cofficint within a rang of to D.

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