Digital Integrated CircuitDesign


 Stanley Bond
 2 years ago
 Views:
Transcription
1 Digital Integrated CircuitDesign Lecture 5a Bipolar Transistor Dep. Region Neutral Base n(0) b B C n b0 P C0 P e0 P C xn 0 xp 0 x n(w) b W B Adib Abrishamifar EE Department IUST
2 Contents Bipolar Transistor Minority Carrier Concentration Dynamic Properties of BJT (Charge Control) The Base Current Terminal Currents The EbersMoll Equations Reciprocity Theorem Modes of Operation Forward Active Mode Reverse Active Mode Cut off Mode Saturation Mode Summary 2/26
3 Bipolar Transistor Minority Carrier Concentration Dynamic Properties of BJT (Charge Control) The Base Current Terminal Currents The EbersMoll Equations Reciprocity Theorem Modes of Operation Forward Active Mode Reverse Active Mode Cut off Mode Saturation Mode Summary 3/26
4 Minority Carrier Concentration Two Basic Assumptions Low level injection in base region All terminal voltages appear across the junction depletion region The concentration of minority at interface n ( o) = n exp( V V ) b bo BE T n ( W) = n exp( V V ) = n exp( V V ) b bo BC T bo CB T V >> V n ( W) o CB T b W << L negligible recombination b 4/26
5 Minority Carrier Concentration The width of the neutral emitter and collector regions is much greater than the diffusion length The minority carrier concentration shows an exponential slope Dep. Region Neutral Base n(0) b B C n b0 P C0 P e0 P C xn 0 xp 0 x n(w) b W B 5/26
6 Minority Carrier Concentration Some important device equations (excess carrier Concentration) n ( x) = n ( x) n b b b Excess minority carrier concentration at the collector junction [ n b ( W )] is less than 0, but the analysis is simplified by assuming b IE = IC = qadb dx n ( W ) o dn b x = o dn b n b( o) n b( W ) = dx W qadn b b( o) qadn b bo IC = = V BE VT 1 W W 6/26 [ exp( ) ]
7 Bipolar Transistor Minority Carrier Concentration Dynamic Properties of BJT (Charge Control) The Base Current Terminal Currents The EbersMoll Equations Reciprocity Theorem Modes of Operation Forward Active Mode Reverse Active Mode Cut off Mode Saturation Mode Summary 7/26
8 Dynamic Properties of BJT (Charge Control) QF= excess minority carrier charge 2 qawn b( o) qaw WIC W Q = Q = =. I 2 2 qad 2D F F C b b Q= It Q = τ I τ = F W 2D 2 F F C b 8/26
9 Dynamic Properties of BJT (Charge Control) For high speed digital circuit we require to be as short as possible Then W must be reduced Example ( ) W = 0.5 µ md, b = 7 cm /sec τf = = 0.18nsec 2 7 τ F 9/26
10 Bipolar Transistor Minority Carrier Concentration Dynamic Properties of BJT (Charge Control) The Base Current Terminal Currents The EbersMoll Equations Reciprocity Theorem Modes of Operation Forward Active Mode Reverse Active Mode Cut off Mode Saturation Mode Summary 10/26
11 The Base Current I BB = the minority carrier diffuse across the base from the emitter to the collector, some do not reach the collector and recombine with the majority carriers β F I = I C B I = I + I + I B BB BE BC I E E B I BB C I C W nb ( x) IBB = qa dx τ o b ( ) normally V < o I >> I + I BC BC BE BB IBE IBC N P N 0 WB I B V BE V CB 11/26
12 Terminal Currents All of current is reversed for pnp transistor B C n p n E B C n n E p D C D E B V BC + C V + BE E I C I E B I DC I DE C V BC + + V BE E I C I E αfide α R I DC 12/26
13 Bipolar Transistor Minority Carrier Concentration Dynamic Properties of BJT (Charge Control) The Base Current Terminal Currents The EbersMoll Equations Reciprocity Theorem Modes of Operation Forward Active Mode Reverse Active Mode Cut off Mode Saturation Mode Summary 13/26
14 Terminal Currents VBE VT I = I ( e 1) DE VBC VT I = I ( e 1) DC I, I Saturation current for emitter and collector ES CS ES CS I = I α I E DE R DC I = α I I C F DE DC B I DC I DE C V BC + + V BE E I C I E αfide α R I DC 14/26
15 Bipolar Transistor Minority Carrier Concentration Dynamic Properties of BJT (Charge Control) The Base Current Terminal Currents The EbersMoll Equations Reciprocity Theorem Modes of Operation Forward Active Mode Reverse Active Mode Cut off Mode Saturation Mode Summary 15/26
16 The EbersMoll Equations VBE VT VBC VT I = I ( e 1) α I ( e 1) E ES R CS VBE VT VBC VT I = α I ( e 1) I ( e 1) C F ES CS Then we have four parameters: I ES, I CS, α, and two F αr variables: Emitter and Collector junction voltages VBE VT I = I ( e 1) DE VBC VT I = I ( e 1) DC ES CS B I DC I DE C V BC + + V BE E I C I E αfide α R I DC 16/26
17 Bipolar Transistor Minority Carrier Concentration Dynamic Properties of BJT (Charge Control) The Base Current Terminal Currents The EbersMoll Equations Reciprocity Theorem Modes of Operation Forward Active Mode Reverse Active Mode Cut off Mode Saturation Mode Summary 17/26
18 Reciprocity Theorem For ideal transistor the four parameters are related by reciprocity theorem α I = α I F ES R CS Typical value ( nonideal transistor) α 0.99, α 0.66, I 10 AI, 10 A F R ES CS 18/26
19 Bipolar Transistor Minority Carrier Concentration Dynamic Properties of BJT (Charge Control) The Base Current Terminal Currents The EbersMoll Equations Reciprocity Theorem Modes of Operation Forward Active Mode Reverse Active Mode Cut off Mode Saturation Mode Summary 19/26
20 Modes of Operation Emitter Junction Collector Junction Mode of Operation Forward Reverse Forward active Reverse Forward Reverse active Reverse Reverse Cut off Forward Forward Saturation 20/26
21 Forward Active Mode V 4V, V 4V BE T BC T I = I exp( V V ) + α I E ES BE T R CS I = α I exp( V V ) + I C F ES BE T CS By substitution for IES exp( V BE VT ) I = α ( I α I ) + I = α I + I ( 1 αα ) = α I + I C F E R CS CS F E CS F R F E CO αf I = I + I, = β 1 α E B C F F 21/26
22 Reverse Active Mode Similar as previous V 4V, V V BE T BC T I = I exp( V V ) + α I C CS BC T IR ES I = α I exp( V V ) + I E IF CS BC T ES I = α ( I α I ) + I = α I + ( 1 α α ) I E IF C IR ES ES IF C IF IR ES 22/26
23 Cut off Mode ( V, V ) 4V BE BC T I = I + α I E ES R CS I = α I + I C F ES CS By reciprocity theorem I I = I ( 1 α ) E ES F = I ( 1 α ) C CS R 23/26
24 Saturation Mode ( V, V ) 4V BE BC T I = I exp( V V ) α I exp( V V ) (I) E ES BE T R CS BC T I = α I exp( V V ) I exp( V V ) (II) C F ES BE T CS BC T V = V V CE ( sat) BE ( sat) BC ( sat ) α R Multiply (II) by and subtract from (I) I α I = I ( 1 αα )exp( V V ) E R C ES F R BE T I = I + I I + I ( 1 α ) = I ( 1 αα )exp( V V ) E B C B C R ES F R BE T I + I ( 1 α ) V = V Ln, I = I ( 1 αα ) B C R BE ( sat) T EO ES F R I EO 24/26
25 Saturation Mode By similar method α I I ( 1 α ) V = V Ln, I = I ( 1 αα ) F B C F BC ( sat) T CO CS F R I CO I + I ( 1 α ) I VCE ( sat) = VTLn α I I ( 1 α ) I ICO ICS αf = = I I α EO ES R B C R CO F B C F EO 1 IC 1 + ( ) α I β α α V = V Ln, β =, β = ( ) I B β F R B R R F CE ( sat) T R F IC αr 1 αf 25/26
26 Summary In this lecture the operation of the bipolar transistor was first described in physical terms The fundamental EbersMoll equation was described The four modes of BJT ( Cut off, Forward active, Reverse active, Sat.) were described 26/26
EE105  Fall 2006 Microelectronic Devices and Circuits
EE105  Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:308pm in Sibley Auditorium Covering everything
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models
LC 3908, Physical lectronics, Lecture 17 Bipolar Transistor njection Models Lecture Outline Last lecture looked at qualitative operation of the BJT, now want to develop a quantitative model to predict
More informationLecture 17. The Bipolar Junction Transistor (II) Regimes of Operation. Outline
Lecture 17 The Bipolar Junction Transistor (II) Regimes of Operation Outline Regimes of operation Largesignal equivalent circuit model Output characteristics Reading Assignment: Howe and Sodini; Chapter
More informationDevice Physics: The Bipolar Transistor
Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches
More informationLecture 17 The Bipolar Junction Transistor (I) Forward Active Regime
Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I V characteristics in forward active regime Reading Assignment:
More informationLecture 17  The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 171 Lecture 17  The Bipolar Junction Transistor (I) Contents: Forward Active Regime April 10, 2003 1. BJT: structure and basic operation
More informationBipolar junction transistor operation and modeling
6.01  Electronic Devices and Circuits Lecture 8  Bipolar Junction Transistor Basics  Outline Announcements Handout  Lecture Outline and Summary; Old eam 1's on Stellar First Hour Eam  Oct. 8, 7:309:30
More informationELEC 3908, Physical Electronics, Lecture 19. BJT Base Resistance and Small Signal Modelling
ELEC 3908, Physical Electronics, Lecture 19 BJT Base Resistance and Small Signal Modelling Lecture Outline Lecture 17 derived static (dc) injection model to predict dc currents from terminal voltages This
More informationCLASS 3&4. BJT currents, parameters and circuit configurations
CLASS 3&4 BJT currents, parameters and circuit configurations I E =I Ep +I En I C =I Cp +I Cn I B =I BB +I En I Cn I BB =I Ep I Cp I E = I B + I C I En = current produced by the electrons injected from
More informationLecture 35  Bipolar Junction Transistor (cont.) November 27, Currentvoltage characteristics of ideal BJT (cont.)
6.720J/3.43J  Integrated Microelectronic Devices  Fall 2002 Lecture 351 Lecture 35  Bipolar Junction Transistor (cont.) November 27, 2002 Contents: 1. Currentvoltage characteristics of ideal BJT (cont.)
More informationChargeStorage Elements: BaseCharging Capacitance C b
ChargeStorage Elements: BaseCharging Capacitance C b * Minority electrons are stored in the base  this charge q NB is a function of the baseemitter voltage * base is still neutral... majority carriers
More informationELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and SelfHeating
ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and SelfHeating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor
More informationBipolar Junction Transistor (BJT)  Introduction
Bipolar Junction Transistor (BJT)  Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationForwardActive Terminal Currents
ForwardActive Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th  e W (why minus sign? is by def.
More informationRecitation 17: BJTBasic Operation in FAR
Recitation 17: BJTBasic Operation in FAR BJT stands for Bipolar Junction Transistor 1. Can be thought of as two pn junctions back to back, you can have pnp or npn. In analogy to MOSFET small current
More informationMemories Bipolar Transistors
Technische Universität Graz nstitute of Solid State Physics Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Exams February 5 March 7 April 18 June 27 Exam Four
More informationECE305: Spring 2018 Final Exam Review
C305: Spring 2018 Final xam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapters 10 and 11 (pp. 371385, 389403) Professor Peter Bermel lectrical and Computer ngineering Purdue University,
More information13. Bipolar transistors
Technische Universität Graz Institute of Solid State Physics 13. Bipolar transistors Jan. 16, 2019 Technische Universität Graz Institute of Solid State Physics bipolar transistors npn transistor collector
More informationInstitute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:0011:00 P2
Technische Universität Graz nstitute of Solid State Physics Exam Feb 2, 10:0011:00 P2 Exam Four questions, two from the online list. Calculator is ok. No notes. Explain some concept: (tunnel contact,
More informationThe Devices. Jan M. Rabaey
The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models
More informationLecture 15  The pn Junction Diode (I) IV Characteristics. November 1, 2005
6.012  Microelectronic Devices and Circuits  Fall 2005 Lecture 151 Lecture 15  The pn Junction Diode (I) IV Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. IV characteristics
More informationEE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET
EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: nchannel MOSFET Source Gate L Drain W L EFF Poly Gate oxide nactive psub depletion region (electrically
More information(e V BC/V T. α F I SE = α R I SC = I S (3)
Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also
More informationFigure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors
Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007
More informationAbout Modeling the Reverse Early Effect in HICUM Level 0
About Modeling the Reverse Early Effect in HICUM Level 0 6 th European HICUM Workshop, June 1213, 2006, Heilbronn Didier CELI, STMicroelectronics 1/21 D. Céli Purpose According to the bipolar models,
More informationLecture 16 The pn Junction Diode (III)
Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter
More information6.012 Electronic Devices and Circuits
Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3
More informationLecture 16  The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 161 Lecture 16  The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. IV characteristics (cont.) 2. Smallsignal
More information12. Memories / Bipolar transistors
Technische Universität Graz Institute of Solid State Physics 12. Memories / Bipolar transistors Jan. 9, 2019 Technische Universität Graz Institute of Solid State Physics Exams January 31 March 8 May 17
More informationBJT  Mode of Operations
JT  Mode of Operations JTs can be modeled by two backtoback diodes. N+ P N N+ JTs are operated in four modes. HO #6: LN 251  JT M Models Page 1 1) Forward active / normal junction forward biased junction
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and crosssectional area 100µm 2
More informationChapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationEE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR
EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX =  4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3
More informationUniversity of Pittsburgh
University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationStudent Number: CARLETON UNIVERSITY SELECTED FINAL EXAMINATION QUESTIONS
Name: CARLETON UNIVERSITY SELECTE FINAL EXAMINATION QUESTIONS URATION: 6 HOURS epartment Name & Course Number: ELEC 3908 Course Instructors: S. P. McGarry Authorized Memoranda: Nonprogrammable calculators
More informationReview of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model
Content MOS Devices and Switching Circuits Review of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model A Cantoni 20092013 Digital Switching 1 Content MOS
More informationChapter 2.  DC Biasing  BJTs
Chapter 2.  DC Biasing  BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationLecture 38  Bipolar Junction Transistor (cont.) May 9, 2007
6.72J/3.43J  Integrated Microelectronic Devices  Spring 27 Lecture 381 Lecture 38  Bipolar Junction Transistor (cont.) May 9, 27 Contents: 1. Nonideal effects in BJT in FAR Reading material: del Alamo,
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More informationLecture 27: Introduction to Bipolar Transistors
NCN www.nanohub.org ECE606: Solid State Devices Lecture 27: Introduction to ipolar Transistors Muhammad Ashraful Alam alam@purdue.edu Alam ECE 606 S09 1 ackground E C E C ase! Point contact Germanium transistor
More informationTransistor Characteristics and A simple BJT Current Mirror
Transistor Characteristics and A simple BJT Current Mirror Currentoltage (I) Characteristics Device Under Test DUT i v T T 1 R X R X T for test Independent variable on horizontal axis Could force current
More informationSwitching circuits: basics and switching speed
ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V
More informationECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017
NAME: PUID: ECE 305 Fall 017 Final Exam (Exam 5) Wednesday, December 13, 017 This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the ECE policy,
More informationLecture 18  The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005
6.012  Microelectronic Devices and ircuits  Fall 2005 Lecture 181 Lecture 18  The ipolar Junction Transistor (II) ontents: 1. Regimes of operation. Regimes of Operation November 10, 2005 2. Largesignal
More informationLecture 19  pn Junction (cont.) October 18, Ideal pn junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics
6.720J/3.43J  Integrated Microelectronic Devices  Fall 2002 Lecture 191 Lecture 19  pn Junction (cont.) October 18, 2002 Contents: 1. Ideal pn junction out of equilibrium (cont.) 2. pn junction diode:
More informationChapter 2  DC Biasing  BJTs
Objectives Chapter 2  DC Biasing  BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationJunction Bipolar Transistor. Characteristics Models Datasheet
Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,
More informationECE342 Test 2 Solutions, Nov 4, :008:00pm, Closed Book (one page of notes allowed)
ECE342 Test 2 Solutions, Nov 4, 2008 6:008:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationSemiconductor Device Modeling and Characterization EE5342, Lecture 15 Sp 2002
Semiconductor Device Modeling and Characterization EE5342, Lecture 15 Sp 2002 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/ L15 05Mar02 1 Charge components in the BJT From Getreau,
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationLecture 18  The Bipolar Junction Transistor (II) Regimes of Operation April 19, 2001
6.012  Microelectronic Devices and ircuits  Spring 2001 Lecture 181 Lecture 18  The ipolar Junction Transistor (II) Regimes of Operation April 19, 2001 ontents: 1. Regimes of operation. 2. Largesignal
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Threeterminal device whose voltagecurrent relationship is controlled by a third voltage
More informationEE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions
EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 pn Junction ptype semiconductor in
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
More informationMicroelectronic Devices and Circuits Lecture 13  Linear Equivalent Circuits  Outline Announcements Exam Two 
6.012 Microelectronic Devices and Circuits Lecture 13 Linear Equivalent Circuits Outline Announcements Exam Two Coming next week, Nov. 5, 7:309:30 p.m. Review Subthreshold operation of MOSFETs Review Large
More informationWhereas the diode was a 1junction device, the transistor contains two junctions. This leads to two possibilities:
Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: ntype (favor e), ptype (favor holes) for conduction Whereas the diode was a junction
More informationRegional Approach Methods for SiGe HBT compact modeling
Regional Approach Methods for SiGe HBT compact modeling M. Schroter 1),2) and H. Tran 2) 1) ECE Dept., University of California San Diego, La Jolla, CA, USA 2) Chair for Electron Devices and Integr. Circuits,
More informationEE 330 Lecture 20. Bipolar Device Modeling
330 Lecture 20 ipolar Device Modeling xam 2 Friday March 9 xam 3 Friday April 13 Review from Last Lecture ipolar Transistors npn stack pnp stack ipolar Devices Show asic Symmetry lectrical Properties not
More information6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
More informationLecture Notes for ECE 215: Digital Integrated Circuits
Lecture Notes for ECE 215: Digital Integrated Circuits J. E. Ayers Electrical and Computer Engineering Department University of Connecticut 2002 All rights reserved University of Connecticut 1 Introduction
More information248 Facta Universitatis ser.: Elect. and Energ. vol. 9,No.2 (1996) doping of donor (N D ) and acceptor (N A ), respectively. With the degenerate appro
FACTA UNIVERSITATIS (NIS) Series: Electronics and Energetics vol. 9, No. 2 (1996), 247{254 NEW INVESTIGATION ON SILICON BIPOLAR TRANSISTOR AT LOW TEMPERATURES Xiao Zhixiong and Wei Tongli Abstract. The
More informationELECTRONICS IA 2017 SCHEME
ELECTRONICS IA 2017 SCHEME CONTENTS 1 [ 5 marks ]...4 2...5 a. [ 2 marks ]...5 b. [ 2 marks ]...5 c. [ 5 marks ]...5 d. [ 2 marks ]...5 3...6 a. [ 3 marks ]...6 b. [ 3 marks ]...6 4 [ 7 marks ]...7 5...8
More informationSOLUTIONS: ECE 606 Homework Week 10 Mark Lundstrom. Purdue University. (Revised 3/29/13)
ECE 66 SOLUTIOS: ECE 66 Homework Week 1 Mark Lundstrom (Revised 3/9/13) 1) In a forward biased P junction under low injection conditions, the QFL s are aroximately flat from the majority carrier region
More informationA Simplified, Analytical, OneDimensional Model for Saturation Operation of the Bipolar Transistor
82 A Simplified, Analytical, OneDimensional Model for Saturation Operation of the Bipolar Transistor G.T. Wright and P.P. Frangos Electronic and Electrical Engineering Department, University of Birmingham,
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More informationMicroelectronic Devices and Circuits Lecture 9  MOS Capacitors I  Outline Announcements Problem set 5 
6.012  Microelectronic Devices and Circuits Lecture 9  MOS Capacitors I  Outline Announcements Problem set 5  Posted on Stellar. Due net Wednesday. Qualitative description  MOS in thermal equilibrium
More informationLecture 10  Carrier Flow (cont.) February 28, 2007
6.720J/3.43J Integrated Microelectronic Devices  Spring 2007 Lecture 101 Lecture 10  Carrier Flow (cont.) February 28, 2007 Contents: 1. Minoritycarrier type situations Reading assignment: del Alamo,
More informationBIPOLAR JUNCTION TRANSISTOR MODELING
BIPOLAR JUNCTION TRANSISTOR MODELING Introduction Operating Modes of the Bipolar Transistor The Equivalent Schematic and the Formulas of the SPICE GummelPoon Model A Listing of the GummelPoon Parameters
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15Mar / 59
Contents Three States of Operation BJT DC Analysis FixedBias Circuit EmitterStabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationTEMPERATURE DEPENDENCE SIMULATION OF THE EMISSION COEFFICIENT VIA EMITTER CAPACITANCE
TEMPERATURE DEPENDENCE SIMULATION OF THE EMISSION COEFFICIENT VIA EMITTER CAPACITANCE R. AMADOR, A. NAGY, M. ALVAREZ, A. POLANCO CENTRO DE INVESTIGACIONES EN MICROELECTRÓNICA, CIUDAD HABANA 10800, CUBA,
More informationIntroduction to Power Semiconductor Devices
ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings
More informationLecture 20  pn Junction (cont.) October 21, Nonideal and secondorder effects
6.70J/3.43J  Integrated Microelectronic Devices  Fall 00 Lecture 01 Lecture 0  pn Junction (cont.) October 1, 00 Contents: 1. Nonideal and secondorder effects Reading assignment: del Alamo, Ch.
More informationShot Noise in pn Junction Diodes and Transistors
Chapter 6 Shot Noise in pn Junction Diodes and Transistors Shockley s 1949 paper heralded a new era in the history of semiconductor device physics and engineering[1]. Basic physical processes of a pn junction
More informationIntroduction to Transistors. Semiconductors Diodes Transistors
Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms
More informationMetaloxidesemiconductor field effect transistors (2 lectures)
Metalidesemiconductor field effect transistors ( lectures) MOS physics (brief in book) Currentvoltage characteristics  pinchoff / channel length modulation  weak inversion  velocity saturation 
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationPeak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction,
Peak Electric Field Junction breakdown occurs when the peak electric field in the P junction reaches a critical value. For the + P junction, qa E ( x) ( xp x), s W dep 2 s ( bi Vr ) 2 s potential barrier
More informationA Novel Method for Transit Time Parameter Extraction. Taking into Account the Coupling Between DC and AC Characteristics
A Novel Method for Transit Time Parameter Extraction Taking into Account the Coupling Between DC and AC Characteristics Dominique BEGE and Didier CELI STMicroelectronics, 850, rue jean Monnet F38926 Cedex
More informationCurrent mechanisms Exam January 27, 2012
Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms
More informationMOS CAPACITOR AND MOSFET
EE336 Semiconductor Devices 1 MOS CAPACITOR AND MOSFET Dr. Mohammed M. Farag Ideal MOS Capacitor Semiconductor Devices Physics and Technology Chapter 5 EE336 Semiconductor Devices 2 MOS Capacitor Structure
More information4.5 (A4.3)  TEMPERATURE INDEPENDENT BIASING (BANDGAP)
emp. Indep. Biasing (7/14/00) Page 1 4.5 (A4.3)  EMPERAURE INDEPENDEN BIASING (BANDGAP) INRODUCION Objective he objective of this presentation is: 1.) Introduce the concept of a bandgap reference 2.)
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An ntype sample of silicon has a uniform density N D = 10 16 atoms cm 3 of arsenic, and a ptype silicon sample has N A = 10 15 atoms cm 3 of boron. For each
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and MK Lee 1. The purest semiconductor crystals it is possible
More information3 Minority carrier profiles (the hyperbolic functions) Consider a
Microelectronic Devices and Circuits October 9, 013  Homework #3 Due Nov 9, 013 1 Te pn junction Consider an abrupt Si pn + junction tat as 10 15 acceptors cm 3 on te pside and 10 19 donors on te nside.
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationjunctions produce nonlinear current voltage characteristics which can be exploited
Chapter 6 PN DODES Junctions between nand ptype semiconductors are extremely important foravariety of devices. Diodes based on pn junctions produce nonlinear current voltage characteristics which can
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example SmallSignal BJT Models SmallSignal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationCHAPTER 4: PN P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki
CHAPTER 4: PN P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers
More informationDiodes. anode. cathode. cutoff. Can be approximated by a piecewiselinearlike characteristic. Lecture 91
Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode
More informationEE 3329 Electronic Devices Syllabus ( Extended Play )
EE 3329  Electronic Devices Syllabus EE 3329 Electronic Devices Syllabus ( Extended Play ) The University of Texas at El Paso The following concepts can be part of the syllabus for the Electronic Devices
More informationDevices. chapter Introduction. 1.2 Silicon Conductivity
chapter 1 Devices 1.1 Introduction The properties and performance of analog bicmos integrated circuits are dependent on the devices used to construct them. This chapter is a review of the operation of
More informationSemiconductor Device Modeling and Characterization EE5342, Lecture 16 Sp 2002
Semiconductor Device Modeling and Characterization EE5342, Lecture 16 Sp 2002 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/ L16 07Mar02 1 GummelPoon Static npn Circuit Model C RC Intrinsic
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 8 Power Dissipation in CMOS Gates Power in CMOS gates Dynamic Power Capacitance switching Crowbar
More informationPN Junction and MOS structure
PN Junction and MOS structure Basic electrostatic equations We will use simple onedimensional electrostatic equations to develop insight and basic understanding of how semiconductor devices operate Gauss's
More information