Introduction to Power Semiconductor Devices
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1 ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017,
2 Power Semiconductor Devices Applications System Ratings 2
3 Switching waveforms for power delivery Ideal Typical 3
4 Power Rectifier: Ideal vs Typical Ideal Typical 4
5 Characteristics of Transistor: Ideal vs Typical Ideal Typical 5
6 Unipolar power devices vs Bipolar power devices Bipolar power devices operate with the injection of minority carriers during on-state current flow. These carriers must be removed when switching the device from the on-state to the off-state. This is accomplished by either charge removal via the gate drive current or via the electron-hole recombination process. These processes introduce significant power losses that degrade the power management efficiency. It is therefore preferable to utilize unipolar current conduction in a power device. The commonly used unipolar power diode structure is the Schottky rectifier. The most commonly used unipolar power transistor is the MOSFET. power The commonly available silicon power bipolar devices are the bipolar transistor and the gate turn-off thyristor (GTO). 6
7 Power Schottky rectifier structure Regular pn-junction diode Regular Schottky diode 7
8 Si Power MOSFET structure Regular MOSFET (1970) (1990) (The silicon U-MOSFET was developed to reduce on-state resistance by the elimination of the JFET component within the D-MOSFET structure.) 8
9 Bipolar Power Device Regular BJT (1950s) (In both devices, injection of minority carriers into the drift region modulates its conductivity, reducing the on-state voltage drop. However, the charge must be subsequently removed during switching, resulting in high turn-off power losses.) 9
10 MOS-Bipolar Power Device (1): IGBT (Insulated gate bipolar transistor) (1980s) 10
11 MOS-Bipolar Power Device (2): MOS-controlled thyristor 11
12 MOS-Bipolar Power Device (3): BRT (Base resistance controlled thyristor) 12
13 MOS-Bipolar Power Device (4): EST (Emitter switched thyristor) 13
14 Ideal drift region for unipolar power devices The unipolar power devices discussed above contain a drift region, which is designed to support the blocking voltage. The properties (doping concentration and thickness) of the ideal drift region can be analyzed by assuming an abrupt junction profile with high doping concentration on one side and a low uniform doping concentration on the other side, while neglecting any junction curvature effects by assuming a parallel-plane configuration. The resistance of the ideal drift region can then be related to the basic properties of the semiconductor material. The solution of Poisson s equation leads to a triangular electric field distribution, as shown in figure above, within a uniformly doped drift region with the slope of the field profile being determined by the doping concentration. The maimum voltage that can be supported by the drift region is determined by the maimum electric field (E m ) reaching the critical electric field (E c ) for breakdown for the semiconductor material. The critical electric field for breakdown and the doping concentration then determine the maimum depletion width (W D ). 14
15 Homo-pn-junction Diode 2 i D A 2 i n p bi ln ln n q kt n n p q kt V n n D bi p ) p A 0 2 ) ( ( 2 ) ( q V q V n p n n D p p A 0 0 ) ( ) ( ; q o q E E ma = q A p / = q D n / A D D A D p A A n D W W W = n + p 2 1 bi D A D A 2 / V q W Review 2 1 / if D >> A
16 Ideal drift region for unipolar power devices (cont d) The specific resistance (resistance per unit area) of the ideal drift region is given by, The depletion width under breakdown conditions is given by, where BV is the desired breakdown voltage. The doping concentration in the drift region required to obtain this BV is given by, Combining these relationships, the specific resistance of the ideal drift region is obtained, The denominator of this equation is commonly referred to as Baliga s figure of merit for power devices. It is an indicator of the impact of the semiconductor material properties on the resistance of the drift region. 16
17 Specific on-resistance of the ideal drift region 17
18 Basic charge coupled Schottky diode structure using P-junction 18
19 Drift region doping concentration for the charge coupled structure 19
20 Ideal specific on-resistance for the charge coupled structure 20
21 Basic charge coupled Schottky diode structure using MOS structure 21
22 Summary The desired characteristics for power semiconductor rectifiers and transistors have been reviewed in this chapter. The characteristics of typical silicon power devices have been compared with those for the ideal case. Various unipolar and bipolar power device structures have been briefly introduced here. Only the basic power device structures are discussed in this book because of space constraints. 22
23 Device Snapshots 23
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