Energy Bands & Carrier Densities

Size: px
Start display at page:

Download "Energy Bands & Carrier Densities"

Transcription

1 Notes for ECE-606: Spring 03 Energy Bands & Carrier Densities Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA /7/3 Key topics ) Energy band diagrams ) Equilibrium carrier densities 3) Equations of motion for a particle

2 Kroemer s lemma of proven ignorance Whenever I teach my semiconductor device physics course, one of the central messages I try to get across early is the importance of energy band diagrams. I often put this in the form of Kroemer s lemma of proven ignorance: If, in discussing a semiconductor problem, you cannot draw an Energy Band Diagram, this shows that you don t know what you are talking about. corollary: If you can draw one, but don t, then your audience won t know what you are talking about. Nobel Lecture, 000) 3 band bending? What happens when we apply a voltage to the gate? KE +V G E i V = 0 4

3 band bending E P.E. = ) = + ) qv ) P.E. = qv ) +V G E i V = 0 ) d d = q dv ) = qe d 5 band bending E E i ) = q E ref ) V ) E = d q d ) = d q d ) = de i q d ) 6

4 p), n), rho) E E i n ) = N C e ) k B T p ) = N V e ) k B T ) = q E ref ) V E = d q d ) ) = d q ) d ) ) de d = ρ ε ρ ) = ε de d = ε d q d = de i q d 7 Kroemer s lemma of proven ignorance Whenever I teach my semiconductor device physics course, one of the central messages I try to get across early is the importance of energy band diagrams. I often put this in the form of Kroemer s lemma of proven ignorance: If, in discussing a semiconductor problem, you cannot draw an Energy Band Diagram, this shows that you don t know what you are talking about. corollary: If you can draw one, but don t, then your audience won t know what you are talking about. Nobel Lecture, 000) 8

5 Key topics ) Energy band diagrams ) Equilibrium carrier densities 3) Equations of motion for a particle 9 carrier densities ) = f E ) k B T + e E D D D E) = m n * S = N C F 0 D π N D = m * k D B T C π n S = f 0 E) D D E)dE cm η F ) What happens at T = 0 K? 0

6 effect of temperature f E) k B T 0 T = 0 K f E) = ) k B T + e E T > T 0 0 T < T 0 E At T = 0 K ) = f E + e E ) k B T D D E) = m * D π n S = f 0 E) D D E)dE cm n S = m * D π N D C = ) * k B T π m D D n n S = D D E)dE cm S = N C η F E

7 law of mass action = E I = = n i hole = n i n i e E G k B T L n i 300K ) 0 0 cm -3 3 n-type semiconductor 3D) Epect: n0 = N C e ) k B T = N V e ) k B T >> n i =? 4

8 p-type semiconductor 3D) Epect: = N V e ) k B T holes = N C e ) k B T >> n i =? 5 any semiconductor in equilibrium = N C e ) k B T = N V e ) k B T hole = N C N V e E G k B T = n i n i = N C N V e E G k B T = n i 6

9 ) Intrinsic: = = n i = 0 0 cm -3 ) N-type: eample = 0 7 cm -3 = 0 3 cm -3 Very curious! ) P-type: = 0 7 cm -3 = 0 3 cm -3 7 law of mass action R i = B = Bn i G i R i = E I G i = R i = Bn i hole 8

10 law of mass action R i = B = G i = Bn i = E I G R i i hole R can t change since G doesn t change, so as n increases, p must decrease so that the product is constant. 9 Carrier density vs. doping and temperature How do we compute this curve? Fig.. from R.F. Pierret, Semiconductor Device Fundamentals 0

11 space charge neutrality p n + N D + N A = 0 Need to know the ionized doping density any semiconductor in equilibrium ) = f E ) k B T + e E N D + N D = f E D ) = ) k B T? + e E D E D E V f E) = + e E ) k B T E A N A N A = f E ) = ) k B T? + e E A

12 statistics of donors/acceptors ) = f E ) k B T + e E N D + N D = ) k B T + g D e E D E D E V f E) = + e E ) k B T E A N A N A = ) k B T + g A e E A 3 Carrier density vs. doping and temperature p n + N D + N A = 0 N D + N D = N A N A = ) k B T + g D e E D ) k B T + g A e E A n = N C F / p = N V F / k B T k B T N V F / k B T N C F / k B T + + g D e E D ) k B T + g A e E A ) = 0 k B T 4

13 Carrier density vs. doping and temperature How do we compute this curve? How do we understand this curve? Fig.. from R.F. Pierret, Semiconductor Device Fundamentals 5 Carrier density vs. doping and temperature n p n i n N D n N D + Fig.. from R.F. Pierret, Semiconductor Device Fundamentals 6

14 carrier density vs. doping and temperature p n + N D + N A = 0 charge neutrality) p n + N D N A = 0 full ionization) np = n i n = N D N A + N D N A + n i / p = N A N D + N A N D + n i / p = n i n n = n i p 7 Key topics ) Energy band diagrams ) Equilibrium carrier densities 3) Equations of motion for a particle 8

15 motion in k-space / real space F e = d ) d k t) = k t 0) + q = d k ) = qe ) dt E t ) d t 0 υ g t) = E k t k ) r t) = r 0) + υ g t t )d t 0 equations of motion for semi-classical transport varies slowly on the scale of the electron s wavelength. no effective mass! 9

ECE-305: Spring Carrier Action: II. Pierret, Semiconductor Device Fundamentals (SDF) pp

ECE-305: Spring Carrier Action: II. Pierret, Semiconductor Device Fundamentals (SDF) pp ECE-305: Spring 015 Carrier Action: II Pierret, Semiconductor Device Fundamentals (SDF) pp. 89-104 Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA

More information

ECE-305: Spring 2016 MOSFET IV

ECE-305: Spring 2016 MOSFET IV ECE-305: Spring 2016 MOSFET IV Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu Lundstrom s lecture notes: Lecture 4 4/7/16 outline

More information

Ideal Diode Equation II + Intro to Solar Cells

Ideal Diode Equation II + Intro to Solar Cells ECE-35: Spring 15 Ideal Diode Equation II + Intro to Solar Cells Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu Pierret, Semiconductor

More information

ECE-305: Spring 2018 Exam 2 Review

ECE-305: Spring 2018 Exam 2 Review ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,

More information

Carrier Recombination

Carrier Recombination Notes for ECE-606: Spring 013 Carrier Recombination Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu /19/13 1 carrier recombination-generation

More information

Minority Carrier Diffusion Equation (MCDE)

Minority Carrier Diffusion Equation (MCDE) ECE-305: Spring 2015 Minority Carrier Diffusion Equation (MCDE) Professor Mark undstrom Electrical and Computer Engineering Purdue University, West afayette, IN USA lundstro@purdue.edu Pierret, Semiconductor

More information

Lecture 22 Field-Effect Devices: The MOS Capacitor

Lecture 22 Field-Effect Devices: The MOS Capacitor Lecture 22 Field-Effect Devices: The MOS Capacitor F. Cerrina Electrical and Computer Engineering University of Wisconsin Madison Click here for link to F.C. homepage Spring 1999 0 Madison, 1999-II Topics

More information

EE 130 Intro to MS Junctions Week 6 Notes. What is the work function? Energy to excite electron from Fermi level to the vacuum level

EE 130 Intro to MS Junctions Week 6 Notes. What is the work function? Energy to excite electron from Fermi level to the vacuum level EE 13 Intro to S Junctions eek 6 Notes Problem 1 hat is the work function? Energy to ecite electron from Fermi level to the vacuum level Electron affinity of 4.5eV Electron affinity of Ge 4.eV orkfunction

More information

The BTE with a B-field: Simple Approach

The BTE with a B-field: Simple Approach ECE 656: Electronic Transport in Semiconductors Fall 017 The BTE with a B-field: Simple Approach Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, IN USA 10/11/17 Introduction

More information

ECE-305: Fall 2017 Metal Oxide Semiconductor Devices

ECE-305: Fall 2017 Metal Oxide Semiconductor Devices C-305: Fall 2017 Metal Oxide Semiconductor Devices Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel lectrical and Computer ngineering Purdue

More information

ECE 305: Fall MOSFET Energy Bands

ECE 305: Fall MOSFET Energy Bands ECE 305: Fall 2016 MOSFET Energy Bands Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu Pierret, Semiconductor Device Fundamentals

More information

Mark Lundstrom 2/10/2013. SOLUTIONS: ECE 606 Homework Week 5 Mark Lundstrom Purdue University (corrected 3/26/13)

Mark Lundstrom 2/10/2013. SOLUTIONS: ECE 606 Homework Week 5 Mark Lundstrom Purdue University (corrected 3/26/13) SOLUIONS: ECE 606 Homework Week 5 Mark Lundstrom Purdue University corrected 6/13) Some of the problems below are taken/adapted from Chapter 4 in Advanced Semiconductor Fundamentals, nd. Ed. By R.F. Pierret.

More information

ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE)

ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu Pierret, Semiconductor

More information

Semiconductor Device Physics

Semiconductor Device Physics 1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle

More information

ECE 440 Lecture 12 : Diffusion of Carriers Class Outline:

ECE 440 Lecture 12 : Diffusion of Carriers Class Outline: ECE 440 Lecture 12 : Diffusion of Carriers Class Outline: Band Bending Diffusion Processes Diffusion and Drift of Carriers Things you should know when you leave Key Questions How do I calculate kinetic

More information

SOLUTIONS: ECE 606 Exam 2: Spring 2013 February 14, 2013 Mark Lundstrom Purdue University

SOLUTIONS: ECE 606 Exam 2: Spring 2013 February 14, 2013 Mark Lundstrom Purdue University NAME: PUID: : SOLUIONS: ECE 66 Exam : February 14, 13 Mark Lundstrom Purdue University his is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. here are four equally

More information

Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, Non-uniformly doped semiconductor in thermal equilibrium

Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, Non-uniformly doped semiconductor in thermal equilibrium 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 7-1 Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, 2007 Contents: 1. Non-uniformly doped semiconductor in thermal equilibrium

More information

Week 3, Lectures 6-8, Jan 29 Feb 2, 2001

Week 3, Lectures 6-8, Jan 29 Feb 2, 2001 Week 3, Lectures 6-8, Jan 29 Feb 2, 2001 EECS 105 Microelectronics Devices and Circuits, Spring 2001 Andrew R. Neureuther Topics: M: Charge density, electric field, and potential; W: Capacitance of pn

More information

( )! N D ( x) ) and equilibrium

( )! N D ( x) ) and equilibrium ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n- type silicon wafer ( N D = 1 15 cm - 3 ) with a heavily doped thin layer at the surface (surface concentration,

More information

ECE 305 Exam 3: Spring 2015 March 6, 2015 Mark Lundstrom Purdue University

ECE 305 Exam 3: Spring 2015 March 6, 2015 Mark Lundstrom Purdue University NAME: PUID: : ECE 305 Exam 3: March 6, 2015 Mark Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula sheet at the end of this exam Following the ECE policy,

More information

ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University

ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University NAME: PUID: : ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University This is a closed book exam You may use a calculator and the formula sheet Following the ECE policy, the calculator

More information

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005 6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 4-1 Contents: Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005

More information

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium. February 13, 2003

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium. February 13, 2003 6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 4-1 Contents: Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium February 13, 2003

More information

This is the 15th lecture of this course in which we begin a new topic, Excess Carriers. This topic will be covered in two lectures.

This is the 15th lecture of this course in which we begin a new topic, Excess Carriers. This topic will be covered in two lectures. Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 15 Excess Carriers This is the 15th lecture of this course

More information

Key Questions. ECE 340 Lecture 6 : Intrinsic and Extrinsic Material I 9/10/12. Class Outline: Effective Mass Intrinsic Material

Key Questions. ECE 340 Lecture 6 : Intrinsic and Extrinsic Material I 9/10/12. Class Outline: Effective Mass Intrinsic Material 9/1/1 ECE 34 Lecture 6 : Intrinsic and Extrinsic Material I Class Outline: Things you should know when you leave Key Questions What is the physical meaning of the effective mass What does a negative effective

More information

ECE 442. Spring, Lecture -2

ECE 442. Spring, Lecture -2 ECE 442 Power Semiconductor Devices and Integrated circuits Spring, 2006 University of Illinois at Chicago Lecture -2 Semiconductor physics band structures and charge carriers 1. What are the types of

More information

ECE 440 Lecture 28 : P-N Junction II Class Outline:

ECE 440 Lecture 28 : P-N Junction II Class Outline: ECE 440 Lecture 28 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 8/30/2007 Semiconductor Fundamentals Lecture 2 Read: Chapters 1 and 2 Last Lecture: Energy Band Diagram Conduction band E c E g Band gap E v Valence

More information

Solar Cell Physics: recombination and generation

Solar Cell Physics: recombination and generation NCN Summer School: July 2011 Solar Cell Physics: recombination and generation Prof. Mark Lundstrom lundstro@purdue.edu Electrical and Computer Engineering Purdue University West Lafayette, Indiana USA

More information

Lecture 35: Introduction to Quantum Transport in Devices

Lecture 35: Introduction to Quantum Transport in Devices ECE-656: Fall 2011 Lecture 35: Introduction to Quantum Transport in Devices Mark Lundstrom Purdue University West Lafayette, IN USA 1 11/21/11 objectives 1) Provide an introduction to the most commonly-used

More information

Electrical Characteristics of MOS Devices

Electrical Characteristics of MOS Devices Electrical Characteristics of MOS Devices The MOS Capacitor Voltage components Accumulation, Depletion, Inversion Modes Effect of channel bias and substrate bias Effect of gate oide charges Threshold-voltage

More information

Lecture 22: Ionized Impurity Scattering

Lecture 22: Ionized Impurity Scattering ECE-656: Fall 20 Lecture 22: Ionized Impurity Scattering Mark Lundstrom Purdue University West Lafayette, IN USA 0/9/ scattering of plane waves ψ i = Ω ei p r U S ( r,t) incident plane wave ( ) = 2π H

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16 Announcements Professor Javey will hold his OH at

More information

Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure

Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with

More information

Lecture 8 - Carrier Drift and Diffusion (cont.) September 21, 2001

Lecture 8 - Carrier Drift and Diffusion (cont.) September 21, 2001 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2001 Lecture 8-1 Lecture 8 - Carrier Drift and Diffusion (cont.) September 21, 2001 Contents: 1. Non-uniformly doped semiconductor in thermal equilibrium

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Lecture 2. Unit Cells and Miller Indexes. Reading: (Cont d) Anderson 2 1.8,

Lecture 2. Unit Cells and Miller Indexes. Reading: (Cont d) Anderson 2 1.8, Lecture 2 Unit Cells and Miller Indexes Reading: (Cont d) Anderson 2 1.8, 2.1-2.7 Unit Cell Concept The crystal lattice consists of a periodic array of atoms. Unit Cell Concept A building block that can

More information

Topic 11-3: Fermi Levels of Intrinsic Semiconductors with Effective Mass in Temperature

Topic 11-3: Fermi Levels of Intrinsic Semiconductors with Effective Mass in Temperature Topic 11-3: Fermi Levels of Intrinsic Semiconductors with Effective Mass in Temperature Summary: In this video we aim to get an expression for carrier concentration in an intrinsic semiconductor. To do

More information

ECE 606 Homework Week 7 Mark Lundstrom Purdue University (revised 2/25/13) e E i! E T

ECE 606 Homework Week 7 Mark Lundstrom Purdue University (revised 2/25/13) e E i! E T ECE 606 Homework Week 7 Mark Lundstrom Purdue University (revised 2/25/13) 1) Consider an n- type semiconductor for which the only states in the bandgap are donor levels (i.e. ( E T = E D ). Begin with

More information

3. Consider a semiconductor. The concentration of electrons, n, in the conduction band is given by

3. Consider a semiconductor. The concentration of electrons, n, in the conduction band is given by Colloqium problems to chapter 13 1. What is meant by an intrinsic semiconductor? n = p All the electrons are originating from thermal excitation from the valence band for an intrinsic semiconductor. Then

More information

Electrostatics of Nanowire Transistors

Electrostatics of Nanowire Transistors Electrostatics of Nanowire Transistors Jing Guo, Jing Wang, Eric Polizzi, Supriyo Datta and Mark Lundstrom School of Electrical and Computer Engineering Purdue University, West Lafayette, IN, 47907 ABSTRACTS

More information

ECE 340 Lecture 6 : Intrinsic and Extrinsic Material I Class Outline:

ECE 340 Lecture 6 : Intrinsic and Extrinsic Material I Class Outline: ECE 340 Lecture 6 : Intrinsic and Extrinsic Material I Class Outline: Effective Mass Intrinsic Material Extrinsic Material Things you should know when you leave Key Questions What is the physical meaning

More information

Electric Field--Definition. Brownian motion and drift velocity

Electric Field--Definition. Brownian motion and drift velocity Electric Field--Definition Definition of electrostatic (electrical) potential, energy diagram and how to remember (visualize) relationships E x Electrons roll downhill (this is a definition ) Holes are

More information

Lecture 13 - Carrier Flow (cont.), Metal-Semiconductor Junction. October 2, 2002

Lecture 13 - Carrier Flow (cont.), Metal-Semiconductor Junction. October 2, 2002 6.72J/3.43J - Integrated Microelectronic Devices - Fall 22 Lecture 13-1 Contents: Lecture 13 - Carrier Flow (cont.), Metal-Semiconductor Junction October 2, 22 1. Transport in space-charge and high-resistivity

More information

Lecture 04 Review of MOSFET

Lecture 04 Review of MOSFET ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation

More information

Lecture 2 - Carrier Statistics in Equilibrium. September 5, 2002

Lecture 2 - Carrier Statistics in Equilibrium. September 5, 2002 6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 21 Lecture 2 Carrier Statistics in Equilibrium Contents: September 5, 2002 1. Conduction and valence bands, bandgap, holes 2. Intrinsic

More information

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low

More information

School of Electrical and Computer Engineering, Cornell University. ECE 5330: Semiconductor Optoelectronics. Fall 2014

School of Electrical and Computer Engineering, Cornell University. ECE 5330: Semiconductor Optoelectronics. Fall 2014 School of Electrical and Computer Engineering, Cornell University ECE 5330: Semiconductor Optoelectronics Fall 014 Homework 7 Due on Nov. 06, 014 Suggested Readings: i) Study lecture notes. ii) Study Coldren

More information

The BTE with a High B-field

The BTE with a High B-field ECE 656: Electronic Transport in Semiconductors Fall 2017 The BTE with a High B-field Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, IN USA 10/11/17 Outline 1) Introduction

More information

Lecture 3 Semiconductor Physics (II) Carrier Transport

Lecture 3 Semiconductor Physics (II) Carrier Transport Lecture 3 Semiconductor Physics (II) Carrier Transport Thermal Motion Carrier Drift Carrier Diffusion Outline Reading Assignment: Howe and Sodini; Chapter 2, Sect. 2.4-2.6 6.012 Spring 2009 Lecture 3 1

More information

n N D n p = n i p N A

n N D n p = n i p N A Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped

More information

Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor?

Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor? Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor? 1 Carrier Motion I Described by 2 concepts: Conductivity: σ

More information

ECE 340 Lecture 21 : P-N Junction II Class Outline:

ECE 340 Lecture 21 : P-N Junction II Class Outline: ECE 340 Lecture 21 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition

More information

EE3901 A2001. Semiconductor Devices. Exam 1

EE3901 A2001. Semiconductor Devices. Exam 1 Name ECE Box # Problem Score Points 1 10 2 30 3 35 4 25 EE3901 A2001 Semiconductor Devices Exam 1 This is a closed book test! You are allowed one sheet (both sides) of notes. Note: Potentially useful reference

More information

ECE 340 Lecture 31 : Narrow Base Diode Class Outline:

ECE 340 Lecture 31 : Narrow Base Diode Class Outline: ECE 340 Lecture 31 : Narrow Base Diode Class Outline: Narrow-Base Diodes Things you should know when you leave Key Questions What is a narrow-base diode? How does current flow in a narrow-base diode? Quick

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Lecture 2 - Carrier Statistics in Equilibrium. February 8, 2007

Lecture 2 - Carrier Statistics in Equilibrium. February 8, 2007 6.720J/3.43J Integrated Microelectronic Devices Spring 2007 Lecture 21 Lecture 2 Carrier Statistics in Equilibrium Contents: February 8, 2007 1. Conduction and valence bands, bandgap, holes 2. Intrinsic

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1)

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Electronic (Semiconductor) Devices P-N Junctions (Diodes): Physical

More information

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr. Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

More information

Lecture 7. Drift and Diffusion Currents. Reading: Pierret

Lecture 7. Drift and Diffusion Currents. Reading: Pierret Lecture 7 Drift and Diffusion Currents Reading: Pierret 3.1-3.2 Ways Carriers (electrons and holes) can change concentrations Current Flow: Drift: charged article motion in resonse to an electric field.

More information

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline:

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: Depletion Approximation Step Junction Things you should know when you leave Key Questions What is the space charge region? What are the

More information

an introduction to Semiconductor Devices

an introduction to Semiconductor Devices an introduction to Semiconductor Devices Donald A. Neamen Chapter 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Introduction: Chapter 6 1. MOSFET Structure 2. MOS Capacitor -

More information

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1 Engineering 2000 Chapter 8 Semiconductors ENG2000: R.I. Hornsey Semi: 1 Overview We need to know the electrical properties of Si To do this, we must also draw on some of the physical properties and we

More information

Lecture 7 - PN Junction and MOS Electrostatics (IV) Electrostatics of Metal-Oxide-Semiconductor Structure. September 29, 2005

Lecture 7 - PN Junction and MOS Electrostatics (IV) Electrostatics of Metal-Oxide-Semiconductor Structure. September 29, 2005 6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 7-1 Lecture 7 - PN Junction and MOS Electrostatics (IV) Electrostatics of Metal-Oide-Semiconductor Structure September 29, 25 Contents: 1.

More information

Solid State Device Fundamentals

Solid State Device Fundamentals Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 Outline - Goals of the course. What is electronic device?

More information

ECE 340 Lecture 39 : MOS Capacitor II

ECE 340 Lecture 39 : MOS Capacitor II ECE 340 Lecture 39 : MOS Capacitor II Class Outline: Effects of Real Surfaces Threshold Voltage MOS Capacitance-Voltage Analysis Things you should know when you leave Key Questions What are the effects

More information

Lecture 3: Density of States

Lecture 3: Density of States ECE-656: Fall 2011 Lecture 3: Density of States Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA 8/25/11 1 k-space vs. energy-space N 3D (k) d 3 k

More information

Lecture 18: Semiconductors - continued (Kittel Ch. 8)

Lecture 18: Semiconductors - continued (Kittel Ch. 8) Lecture 18: Semiconductors - continued (Kittel Ch. 8) + a - Donors and acceptors J U,e e J q,e Transport of charge and energy h E J q,e J U,h Physics 460 F 2006 Lect 18 1 Outline More on concentrations

More information

Lecture 12: MOSFET Devices

Lecture 12: MOSFET Devices Lecture 12: MOSFET Devices Gu-Yeon Wei Division of Engineering and Applied Sciences Harvard University guyeon@eecs.harvard.edu Wei 1 Overview Reading S&S: Chapter 5.1~5.4 Supplemental Reading Background

More information

Lecture 17 - p-n Junction. October 11, Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium

Lecture 17 - p-n Junction. October 11, Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium 6.72J/3.43J - Integrated Microelectronic Devices - Fall 22 Lecture 17-1 Lecture 17 - p-n Junction October 11, 22 Contents: 1. Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium

More information

ECE-305: Fall 2017 MOS Capacitors and Transistors

ECE-305: Fall 2017 MOS Capacitors and Transistors ECE-305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel Electrical and Computer Engineering Purdue

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30

More information

Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005

Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005 6.12 Microelectronic Devices and Circuits Fall 25 Lecture 8 1 Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oide Semiconductor Structure (cont.) Contents: October 4, 25 1. Overview

More information

Lecture 6: 2D FET Electrostatics

Lecture 6: 2D FET Electrostatics Lecture 6: 2D FET Electrostatics 2016-02-01 Lecture 6, High Speed Devices 2014 1 Lecture 6: III-V FET DC I - MESFETs Reading Guide: Liu: 323-337 (he mainly focuses on the single heterostructure FET) Jena:

More information

Review of Semiconductor Physics

Review of Semiconductor Physics Solid-state physics Review of Semiconductor Physics The daunting task of solid state physics Quantum mechanics gives us the fundamental equation The equation is only analytically solvable for a handful

More information

ECE606: Solid State Devices Lecture 23 MOSFET I-V Characteristics MOSFET non-idealities

ECE606: Solid State Devices Lecture 23 MOSFET I-V Characteristics MOSFET non-idealities ECE66: Solid State evices Lecture 3 MOSFET I- Characteristics MOSFET non-idealities Gerhard Klimeck gekco@purdue.edu Outline 1) Square law/ simplified bulk charge theory ) elocity saturation in simplified

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

ECE606: Solid State Devices Lecture 22 MOScap Frequency Response MOSFET I-V Characteristics

ECE606: Solid State Devices Lecture 22 MOScap Frequency Response MOSFET I-V Characteristics EE66: olid tate evices Lecture 22 MOcap Frequency Response MOFET I- haracteristics erhard Klimeck gekco@purdue.edu. Background 2. mall signal capacitances 3. Large signal capacitance 4. Intermediate ummary

More information

Carrier transport: Drift and Diffusion

Carrier transport: Drift and Diffusion . Carrier transport: Drift and INEL 5209 - Solid State Devices - Spring 2012 Manuel Toledo April 10, 2012 Manuel Toledo Transport 1/ 32 Outline...1 Drift Drift current Mobility Resistivity Resistance Hall

More information

Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.)

Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Outline 1. Overview of MOS electrostatics under bias 2. Depletion regime 3. Flatband 4. Accumulation regime

More information

Dr. Todd Satogata (ODU/Jefferson Lab) Wednesday, February

Dr. Todd Satogata (ODU/Jefferson Lab)   Wednesday, February University Physics 227N/232N Capacitors, Field Energy, Current and Ohm s Law Lab deferred to Fri Feb 28 QUIZ this Friday! (Feb 21) Fred lectures Monday! (Feb 24) Dr. Todd Satogata (ODU/Jefferson Lab) satogata@jlab.org

More information

MOSFET Physics: The Long Channel Approximation

MOSFET Physics: The Long Channel Approximation MOSFET Physics: The ong Channel Approximation A basic n-channel MOSFET (Figure 1) consists of two heavily-doped n-type regions, the Source and Drain, that comprise the main terminals of the device. The

More information

Lecture 15: Optoelectronic devices: Introduction

Lecture 15: Optoelectronic devices: Introduction Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1

More information

(Refer Slide Time: 03:41)

(Refer Slide Time: 03:41) Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 25 PN Junction (Contd ) This is the 25th lecture of this course

More information

PN Junctions. Lecture 7

PN Junctions. Lecture 7 Lecture 7 PN Junctions Kathy Aidala Applied Physics, G2 Harvard University 10 October, 2002 Wei 1 Active Circuit Elements Why are they desirable? Much greater flexibility in circuit applications. What

More information

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 Your Name: ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 1. Review questions a) Illustrate the generation of a photocurrent in a p-n diode by drawing an energy band diagram. Indicate

More information

Lecture 27: Introduction to Bipolar Transistors

Lecture 27: Introduction to Bipolar Transistors NCN www.nanohub.org ECE606: Solid State Devices Lecture 27: Introduction to ipolar Transistors Muhammad Ashraful Alam alam@purdue.edu Alam ECE 606 S09 1 ackground E C E C ase! Point contact Germanium transistor

More information

The Law of the Junction Revisited. Mark Lundstrom Network for Computational Nanotechnology and Purdue University ( ). (1)

The Law of the Junction Revisited. Mark Lundstrom Network for Computational Nanotechnology and Purdue University ( ). (1) The Law of the Junction Revisited Mark Lundstrom Network for Computational Nanotechnology and Purdue University Consider a one-sided, short base diode like that shown in Fig.. We usually analyze the I-V

More information

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur

More information

Chapter 7. The pn Junction

Chapter 7. The pn Junction Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting

More information

V BI. H. Föll: kiel.de/matwis/amat/semi_en/kap_2/backbone/r2_2_4.html. different electrochemical potentials (i.e.

V BI. H. Föll:  kiel.de/matwis/amat/semi_en/kap_2/backbone/r2_2_4.html. different electrochemical potentials (i.e. Consider the the band diagram for a homojunction, formed when two bits of the same type of semicondutor (e.g. Si) are doped p and ntype and then brought into contact. Electrons in the two bits have different

More information

SOLUTIONS: Homework: Week 2 Thermoelectricity from Atoms to Systems Mark Lundstrom, nanohub- U Fall 2013

SOLUTIONS: Homework: Week 2 Thermoelectricity from Atoms to Systems Mark Lundstrom, nanohub- U Fall 2013 SOLUIONS: Homework: Week hermoelectricity from Atoms to Systems Mark Lundstrom, nanohub- U all 13 here are seven HW questions below. his homework will be graded in multiple choice format no partial credit.

More information

3.23 Electrical, Optical, and Magnetic Properties of Materials

3.23 Electrical, Optical, and Magnetic Properties of Materials MIT OpenCourseWare http://ocw.mit.edu 3.23 Electrical, Optical, and Magnetic Properties of Materials Fall 2007 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.

More information

Quantum Phenomena & Nanotechnology (4B5)

Quantum Phenomena & Nanotechnology (4B5) Quantum Phenomena & Nanotechnology (4B5) The 2-dimensional electron gas (2DEG), Resonant Tunneling diodes, Hot electron transistors Lecture 11 In this lecture, we are going to look at 2-dimensional electron

More information

Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction,

Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction, Peak Electric Field Junction breakdown occurs when the peak electric field in the P junction reaches a critical value. For the + P junction, qa E ( x) ( xp x), s W dep 2 s ( bi Vr ) 2 s potential barrier

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.

More information

Technology Computer Aided Design (TCAD) Laboratory. Lecture 2, A simulation primer

Technology Computer Aided Design (TCAD) Laboratory. Lecture 2, A simulation primer Technology Computer Aided Design (TCAD) Laboratory Lecture 2, A simulation primer [Source: Synopsys] Giovanni Betti Beneventi E-mail: gbbeneventi@arces.unibo.it ; giobettibeneventi@gmail.com Office: Engineering

More information

01 01 Intro to Course

01 01 Intro to Course ECE 474 Spring 2011 Day Date Lecture Chapter Topics M 10 Jan 01 01 Intro to Course Physical structures of crystal systems that are important for devices W 12 02 01 How to quantify physical structures of

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture

More information