Lecture 22 Field-Effect Devices: The MOS Capacitor

Size: px
Start display at page:

Download "Lecture 22 Field-Effect Devices: The MOS Capacitor"

Transcription

1 Lecture 22 Field-Effect Devices: The MOS Capacitor F. Cerrina Electrical and Computer Engineering University of Wisconsin Madison Click here for link to F.C. homepage Spring Madison, 1999-II

2 Topics Quantitative relations between gate voltage V G and MOS carriers Focus is on semiconductor potential 1 Madison, 1999-II

3 MOS Capacitor The field effect is implemented using: A gate electrode A silicon oxide dielectric insulator A semiconductor electrode A voltage applied on the gate controls the charge in the semiconductor The voltage is distributed part on the oxide and part on the semiconductor (series capacitors) 2 Madison, 1999-II

4 MOS Band Structure In equilibrium E F must be constant The gap of the oxide is much larger than that of the semiconductor Flat bands model: at V G = 0 there is no band bending What happens if we apply a voltage? No current flowing: E F remains defined Difference between E F is equal to qv G Define Surface Potential ψ S 3 Madison, 1999-II

5 Charging of the MOS capacitor The bias voltage shifts up and down the bulk E i. At the surface the band edges cannot move. Band bending makes the bands stretchable Assuming flat bands for V G =0,n-type material (Fig. 16.6) V G = 0, nothing happens V G > 0, electrons are attracted under the gate Accumulation V G < 0, electrons are repelled, i.e., holes are attracted; bands curve upward because E F must get closer to E V, Depletion V G = V i semiconductor becomes intrinsic under the gate V G = V T semiconductor begins to reverse type, n = p. At this voltage (threshold voltage) the material becomes artificially n-type Threshold V G >V T semiconducotr is n-type, n>p, under the gate. Inversion The gate voltage controls the semiconductor polarity! Also case of n-type, Fig Madison, 1999-II

6 MOS Capacitor II Define bulk and surface potentials: ψ = 1 q (E i E f ) ψ s = 1 q (E i(bulk) E i (surface)) The sign must be considered carefully and is sometimes used incorrectly in books; ψ < 0 for n-type, ψ > 0 for p-type The surface potential ψ s is the change in potential from bulk to surface, while the bulk potential is the change in potential from doped to intrinsic Cfr. Fig Madison, 1999-II

7 MOS Band Structure As usual carrier density is defined by universal relation: At the surface we can write: n = n i e (E f E i )/kt = ni e qψ/kt E F E i (s) =E F E i (B)+E i (B) E i (s) ψ = ψ bulk + ψ s n = n i e q [ kt ( ψ bulk+ψ s ) = n i e q ] kt ψ bulk e + q kt ψ s n(surface) =n p0 e + q kt ψ s p(surface) =p p0 e q kt ψ s This relation is the central relation in the operation of the MOS 6 Madison, 1999-II

8 Charging of the MOS Consider a p-type bulk. Hence ψ B =(E i E f )/q > 0. We can distinguish: ψ s > 0 Accumulation of holes (bands bend up) ψ s = 0 Flat bands ψ B >ψ s > 0 Depletion (bands bend down) ψ s = ψ B Intrinsic surface (bands bend down) ψ s >ψ B Inversion (bands bend down) (-) Accumulation 0 Depletion V T Inversion (+) For ψ s =2ψ B we have the transition from depletion to inversion Consider Example Madison, 1999-II

9 Delta-depletion Solution The main problem is how to find ψ s (V G ) Voltage is divided between depletion layer and oxide: V G = ψ S + V oxide Q metal = Q Semiconductor V ox C o = C S ψ S V ox = ψ s C S C o W (ψ) = 2Ks ɛ 0 qn A ψ S, C(ψ S )= K Sɛ 0 W (ψ) V G = ψ S + K S K o x o 2qNA K S ɛ 0 ψ s Given V G it is easy to compute ψ S 8 Madison, 1999-II

10 Charge stages Before Inversion: In this stage the gate voltage V G directly affects the width of the depletion layer: No channel of free charge Lateral conduction not possible Variable depletion layer After Inversion: At the surface a thin layer of free carriers is formed. Further increase in V G increase the amount of free carriers rather than the depletion layer width Channel of free charge Lateral conduction possible Fixed width of the depletion layer 9 Madison, 1999-II

11 Conclusions The band structure of the MOS capacitor is controlled by the gate voltage Carrier concentration determined by surface potential 10 Madison, 1999-II

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 2017 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2017 Khanna Lecture Outline! Semiconductor Physics " Band gaps "

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

MOS Capacitor MOSFET Devices. MOSFET s. INEL Solid State Electronics. Manuel Toledo Quiñones. ECE Dept. UPRM.

MOS Capacitor MOSFET Devices. MOSFET s. INEL Solid State Electronics. Manuel Toledo Quiñones. ECE Dept. UPRM. INEL 6055 - Solid State Electronics ECE Dept. UPRM 20th March 2006 Definitions MOS Capacitor Isolated Metal, SiO 2, Si Threshold Voltage qφ m metal d vacuum level SiO qχ 2 E g /2 qφ F E C E i E F E v qφ

More information

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET N-Type, P-Type. Semiconductor Physics.

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET N-Type, P-Type. Semiconductor Physics. ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 217 MOS Transistor Theory, MOS Model Lecture Outline! Semiconductor Physics " Band gaps " Field Effects! MOS Physics " Cutoff

More information

Semiconductor Devices. C. Hu: Modern Semiconductor Devices for Integrated Circuits Chapter 5

Semiconductor Devices. C. Hu: Modern Semiconductor Devices for Integrated Circuits Chapter 5 Semiconductor Devices C. Hu: Modern Semiconductor Devices for Integrated Circuits Chapter 5 Global leader in environmental and industrial measurement Wednesday 3.2. afternoon Tour around facilities & lecture

More information

! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.

! CMOS Process Enhancements. ! Semiconductor Physics.  Band gaps.  Field Effects. ! MOS Physics.  Cut-off.  Depletion. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!

More information

Electrical Characteristics of MOS Devices

Electrical Characteristics of MOS Devices Electrical Characteristics of MOS Devices The MOS Capacitor Voltage components Accumulation, Depletion, Inversion Modes Effect of channel bias and substrate bias Effect of gate oide charges Threshold-voltage

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.)

Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Outline 1. Overview of MOS electrostatics under bias 2. Depletion regime 3. Flatband 4. Accumulation regime

More information

! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.

! CMOS Process Enhancements. ! Semiconductor Physics.  Band gaps.  Field Effects. ! MOS Physics.  Cut-off.  Depletion. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 9, 019 MOS Transistor Theory, MOS Model Lecture Outline CMOS Process Enhancements Semiconductor Physics Band gaps Field Effects

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

ECE-305: Fall 2017 Metal Oxide Semiconductor Devices

ECE-305: Fall 2017 Metal Oxide Semiconductor Devices C-305: Fall 2017 Metal Oxide Semiconductor Devices Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel lectrical and Computer ngineering Purdue

More information

ECE 340 Lecture 39 : MOS Capacitor II

ECE 340 Lecture 39 : MOS Capacitor II ECE 340 Lecture 39 : MOS Capacitor II Class Outline: Effects of Real Surfaces Threshold Voltage MOS Capacitance-Voltage Analysis Things you should know when you leave Key Questions What are the effects

More information

ECE 305 Exam 5 SOLUTIONS: Spring 2015 April 17, 2015 Mark Lundstrom Purdue University

ECE 305 Exam 5 SOLUTIONS: Spring 2015 April 17, 2015 Mark Lundstrom Purdue University NAME: PUID: : ECE 305 Exam 5 SOLUTIONS: April 17, 2015 Mark Lundstrom Purdue University This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the

More information

Class 05: Device Physics II

Class 05: Device Physics II Topics: 1. Introduction 2. NFET Model and Cross Section with Parasitics 3. NFET as a Capacitor 4. Capacitance vs. Voltage Curves 5. NFET as a Capacitor - Band Diagrams at V=0 6. NFET as a Capacitor - Accumulation

More information

Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005

Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005 6.12 Microelectronic Devices and Circuits Fall 25 Lecture 8 1 Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oide Semiconductor Structure (cont.) Contents: October 4, 25 1. Overview

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

MOS Capacitors ECE 2204

MOS Capacitors ECE 2204 MOS apacitors EE 2204 Some lasses of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor MOSFET, which will be the type that we will study in this course. Metal-Semiconductor Field

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16 Announcements Professor Javey will hold his OH at

More information

Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure

Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon

More information

Lecture 12: MOS Capacitors, transistors. Context

Lecture 12: MOS Capacitors, transistors. Context Lecture 12: MOS Capacitors, transistors Context In the last lecture, we discussed PN diodes, and the depletion layer into semiconductor surfaces. Small signal models In this lecture, we will apply those

More information

ESE 570 MOS TRANSISTOR THEORY Part 1. Kenneth R. Laker, University of Pennsylvania, updated 5Feb15

ESE 570 MOS TRANSISTOR THEORY Part 1. Kenneth R. Laker, University of Pennsylvania, updated 5Feb15 ESE 570 MOS TRANSISTOR THEORY Part 1 TwoTerminal MOS Structure 2 GATE Si Oxide interface n n Mass Action Law VB 2 Chemical Periodic Table Donors American Chemical Society (ACS) Acceptors Metalloids 3 Ideal

More information

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor

More information

Week 3, Lectures 6-8, Jan 29 Feb 2, 2001

Week 3, Lectures 6-8, Jan 29 Feb 2, 2001 Week 3, Lectures 6-8, Jan 29 Feb 2, 2001 EECS 105 Microelectronics Devices and Circuits, Spring 2001 Andrew R. Neureuther Topics: M: Charge density, electric field, and potential; W: Capacitance of pn

More information

Lecture 04 Review of MOSFET

Lecture 04 Review of MOSFET ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D

More information

an introduction to Semiconductor Devices

an introduction to Semiconductor Devices an introduction to Semiconductor Devices Donald A. Neamen Chapter 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Introduction: Chapter 6 1. MOSFET Structure 2. MOS Capacitor -

More information

EE105 - Spring 2007 Microelectronic Devices and Circuits. Structure and Symbol of MOSFET. MOS Capacitor. Metal-Oxide-Semiconductor (MOS) Capacitor

EE105 - Spring 2007 Microelectronic Devices and Circuits. Structure and Symbol of MOSFET. MOS Capacitor. Metal-Oxide-Semiconductor (MOS) Capacitor EE105 - Spring 007 Microelectronic Device and ircuit Metal-Oide-Semiconductor (MOS) apacitor Lecture 4 MOS apacitor The MOS tructure can be thought of a a parallel-plate capacitor, with the top plate being

More information

Lecture 22 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) April 2, 2007

Lecture 22 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) April 2, 2007 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 22-1 Lecture 22 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) April 2, 2007 Contents: 1. Ideal MOS structure

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

ECE606: Solid State Devices Lecture 22 MOScap Frequency Response MOSFET I-V Characteristics

ECE606: Solid State Devices Lecture 22 MOScap Frequency Response MOSFET I-V Characteristics EE66: olid tate evices Lecture 22 MOcap Frequency Response MOFET I- haracteristics erhard Klimeck gekco@purdue.edu. Background 2. mall signal capacitances 3. Large signal capacitance 4. Intermediate ummary

More information

EE 560 MOS TRANSISTOR THEORY

EE 560 MOS TRANSISTOR THEORY 1 EE 560 MOS TRANSISTOR THEORY PART 1 TWO TERMINAL MOS STRUCTURE V G (GATE VOLTAGE) 2 GATE OXIDE SiO 2 SUBSTRATE p-type doped Si (N A = 10 15 to 10 16 cm -3 ) t ox V B (SUBSTRATE VOLTAGE) EQUILIBRIUM:

More information

Energy Bands & Carrier Densities

Energy Bands & Carrier Densities Notes for ECE-606: Spring 03 Energy Bands & Carrier Densities Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu /7/3 Key topics

More information

Lecture 7 MOS Capacitor

Lecture 7 MOS Capacitor EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 7 MOS Capacitor Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology Hoboken, NJ 07030

More information

SECTION: Circle one: Alam Lundstrom. ECE 305 Exam 5 SOLUTIONS: Spring 2016 April 18, 2016 M. A. Alam and M.S. Lundstrom Purdue University

SECTION: Circle one: Alam Lundstrom. ECE 305 Exam 5 SOLUTIONS: Spring 2016 April 18, 2016 M. A. Alam and M.S. Lundstrom Purdue University NAME: PUID: SECTION: Circle one: Alam Lundstrom ECE 305 Exam 5 SOLUTIONS: April 18, 2016 M A Alam and MS Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula

More information

FIELD-EFFECT TRANSISTORS

FIELD-EFFECT TRANSISTORS FIEL-EFFECT TRANSISTORS 1 Semiconductor review 2 The MOS capacitor 2 The enhancement-type N-MOS transistor 3 I-V characteristics of enhancement MOSFETS 4 The output characteristic of the MOSFET in saturation

More information

Lecture 6: 2D FET Electrostatics

Lecture 6: 2D FET Electrostatics Lecture 6: 2D FET Electrostatics 2016-02-01 Lecture 6, High Speed Devices 2014 1 Lecture 6: III-V FET DC I - MESFETs Reading Guide: Liu: 323-337 (he mainly focuses on the single heterostructure FET) Jena:

More information

Lecture 7 - PN Junction and MOS Electrostatics (IV) Electrostatics of Metal-Oxide-Semiconductor Structure. September 29, 2005

Lecture 7 - PN Junction and MOS Electrostatics (IV) Electrostatics of Metal-Oxide-Semiconductor Structure. September 29, 2005 6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 7-1 Lecture 7 - PN Junction and MOS Electrostatics (IV) Electrostatics of Metal-Oide-Semiconductor Structure September 29, 25 Contents: 1.

More information

MOS CAPACITOR AND MOSFET

MOS CAPACITOR AND MOSFET EE336 Semiconductor Devices 1 MOS CAPACITOR AND MOSFET Dr. Mohammed M. Farag Ideal MOS Capacitor Semiconductor Devices Physics and Technology Chapter 5 EE336 Semiconductor Devices 2 MOS Capacitor Structure

More information

Lecture 3: CMOS Transistor Theory

Lecture 3: CMOS Transistor Theory Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos I-V Characteristics pmos I-V Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors

More information

MOS electrostatic: Quantitative analysis

MOS electrostatic: Quantitative analysis MOS electrotatic: Quantitative analyi In thi cla, we will Derive analytical expreion for the charge denity, electric field and the electrotatic potential. xpreion for the depletion layer width Decribe

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture

More information

Lecture 12: MOSFET Devices

Lecture 12: MOSFET Devices Lecture 12: MOSFET Devices Gu-Yeon Wei Division of Engineering and Applied Sciences Harvard University guyeon@eecs.harvard.edu Wei 1 Overview Reading S&S: Chapter 5.1~5.4 Supplemental Reading Background

More information

! Previously: simple models (0 and 1 st order) " Comfortable with basic functions and circuits. ! This week and next (4 lectures)

! Previously: simple models (0 and 1 st order)  Comfortable with basic functions and circuits. ! This week and next (4 lectures) ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are

More information

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1

More information

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless

More information

The Gradual Channel Approximation for the MOSFET:

The Gradual Channel Approximation for the MOSFET: 6.01 - Electronic Devices and Circuits Fall 003 The Gradual Channel Approximation for the MOSFET: We are modeling the terminal characteristics of a MOSFET and thus want i D (v DS, v GS, v BS ), i B (v

More information

Extensive reading materials on reserve, including

Extensive reading materials on reserve, including Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes

Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor

More information

Semiconductor Integrated Process Design (MS 635)

Semiconductor Integrated Process Design (MS 635) Semiconductor Integrated Process Design (MS 635) Instructor: Prof. Keon Jae Lee - Office: 응용공학동 #4306, Tel: #3343 - Email: keonlee@kaist.ac.kr Lecture: (Tu, Th), 1:00-2:15 #2425 Office hour: Tues & Thur

More information

Part 4: Heterojunctions - MOS Devices. MOSFET Current Voltage Characteristics

Part 4: Heterojunctions - MOS Devices. MOSFET Current Voltage Characteristics MOS Device Uses: Part 4: Heterojunctions - MOS Devices MOSCAP capacitor: storing charge, charge-coupled device (CCD), etc. MOSFET transistor: switch, current amplifier, dynamic random access memory (DRAM-volatile),

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 5: January 25, 2018 MOS Operating Regions, pt. 1 Lecture Outline! 3 Regions of operation for MOSFET " Subthreshold " Linear " Saturation!

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today MOS MOS. Capacitor. Idea

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today MOS MOS. Capacitor. Idea ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 9: September 26, 2011 MOS Model Today MOS Structure Basic Idea Semiconductor Physics Metals, insulators Silicon lattice

More information

! PN Junction. ! MOS Transistor Topology. ! Threshold. ! Operating Regions. " Resistive. " Saturation. " Subthreshold (next class)

! PN Junction. ! MOS Transistor Topology. ! Threshold. ! Operating Regions.  Resistive.  Saturation.  Subthreshold (next class) ESE370: ircuitlevel Modeling, Design, and Optimization for Digital Systems Lec 7: September 20, 2017 MOS Transistor Operating Regions Part 1 Today! PN Junction! MOS Transistor Topology! Threshold! Operating

More information

Transistors - a primer

Transistors - a primer ransistors - a primer What is a transistor? Solid-state triode - three-terminal device, with voltage (or current) at third terminal used to control current between other two terminals. wo types: bipolar

More information

Dept. of Materials Science and Engineering. Electrical Properties Of Materials

Dept. of Materials Science and Engineering. Electrical Properties Of Materials Problem Set 12 Solutions See handout "Part 4: Heterojunctions MOS Devices" (slides 9-18) Using the Boise State Energy Band Diagram program, build the following structure: Gate material: 5nm p + -Poly Si

More information

Long Channel MOS Transistors

Long Channel MOS Transistors Long Channel MOS Transistors The theory developed for MOS capacitor (HO #2) can be directly extended to Metal-Oxide-Semiconductor Field-Effect transistors (MOSFET) by considering the following structure:

More information

ECE 442. Spring, Lecture -2

ECE 442. Spring, Lecture -2 ECE 442 Power Semiconductor Devices and Integrated circuits Spring, 2006 University of Illinois at Chicago Lecture -2 Semiconductor physics band structures and charge carriers 1. What are the types of

More information

Lecture 11: MOS Transistor

Lecture 11: MOS Transistor Lecture 11: MOS Transistor Prof. Niknejad Lecture Outline Review: MOS Capacitors Regions MOS Capacitors (3.8 3.9) CV Curve Threshold Voltage MOS Transistors (4.1 4.3): Overview Cross-section and layout

More information

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2

More information

Choice of V t and Gate Doping Type

Choice of V t and Gate Doping Type Choice of V t and Gate Doping Type To make circuit design easier, it is routine to set V t at a small positive value, e.g., 0.4 V, so that, at V g = 0, the transistor does not have an inversion layer and

More information

Scaling Issues in Planar FET: Dual Gate FET and FinFETs

Scaling Issues in Planar FET: Dual Gate FET and FinFETs Scaling Issues in Planar FET: Dual Gate FET and FinFETs Lecture 12 Dr. Amr Bayoumi Fall 2014 Advanced Devices (EC760) Arab Academy for Science and Technology - Cairo 1 Outline Scaling Issues for Planar

More information

MOSFET: Introduction

MOSFET: Introduction E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major

More information

ECE-305: Fall 2017 MOS Capacitors and Transistors

ECE-305: Fall 2017 MOS Capacitors and Transistors ECE-305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel Electrical and Computer Engineering Purdue

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it. Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The

More information

MENA9510 characterization course: Capacitance-voltage (CV) measurements

MENA9510 characterization course: Capacitance-voltage (CV) measurements MENA9510 characterization course: Capacitance-voltage (CV) measurements 30.10.2017 Halvard Haug Outline Overview of interesting sample structures Ohmic and schottky contacts Why C-V for solar cells? The

More information

! Previously: simple models (0 and 1 st order) " Comfortable with basic functions and circuits. ! This week and next (4 lectures)

! Previously: simple models (0 and 1 st order)  Comfortable with basic functions and circuits. ! This week and next (4 lectures) ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 Your Name: ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 1. Review questions a) Illustrate the generation of a photocurrent in a p-n diode by drawing an energy band diagram. Indicate

More information

Lecture 23 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) April 4, 2007

Lecture 23 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) April 4, 2007 6.720J/3.43J Integrated Microelectronic Devices Spring 2007 Lecture 231 Lecture 23 The Si surface and the MetalOxideSemiconductor Structure (cont.) April 4, 2007 Contents: 1. Ideal MOS structure under

More information

This is the 15th lecture of this course in which we begin a new topic, Excess Carriers. This topic will be covered in two lectures.

This is the 15th lecture of this course in which we begin a new topic, Excess Carriers. This topic will be covered in two lectures. Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 15 Excess Carriers This is the 15th lecture of this course

More information

The Devices: MOS Transistors

The Devices: MOS Transistors The Devices: MOS Transistors References: Semiconductor Device Fundamentals, R. F. Pierret, Addison-Wesley Digital Integrated Circuits: A Design Perspective, J. Rabaey et.al. Prentice Hall NMOS Transistor

More information

Thermionic Emission Theory

Thermionic Emission Theory hapter 4. PN and Metal-Semiconductor Junction Thermionic Emiion Theory Energy band diagram of a Schottky contact with a forward bia V applied between the metal and the emiconductor. Electron concentration

More information

Semiconductor Junctions

Semiconductor Junctions 8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss

More information

EE 3329 Electronic Devices Syllabus ( Extended Play )

EE 3329 Electronic Devices Syllabus ( Extended Play ) EE 3329 - Electronic Devices Syllabus EE 3329 Electronic Devices Syllabus ( Extended Play ) The University of Texas at El Paso The following concepts can be part of the syllabus for the Electronic Devices

More information

1st Year-Computer Communication Engineering-RUC. 4- P-N Junction

1st Year-Computer Communication Engineering-RUC. 4- P-N Junction 4- P-N Junction We begin our study of semiconductor devices with the junction for three reasons. (1) The device finds application in many electronic systems, e.g., in adapters that charge the batteries

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. Refinement. Last Time. No Field. Body Contact

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. Refinement. Last Time. No Field. Body Contact ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 10: September 6, 01 MOS Transistor Basics Today MOS Transistor Topology Threshold Operating Regions Resistive Saturation

More information

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low

More information

Integrated Circuits & Systems

Integrated Circuits & Systems Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 10 MOSFET part 1 guntzel@inf.ufsc.br ual-well Trench-Isolated

More information

6.152J / 3.155J Spring 05 Lecture 08-- IC Lab Testing. IC Lab Testing. Outline. Structures to be Characterized. Sheet Resistance, N-square Resistor

6.152J / 3.155J Spring 05 Lecture 08-- IC Lab Testing. IC Lab Testing. Outline. Structures to be Characterized. Sheet Resistance, N-square Resistor IC Lab Testing Review Process Outline Structures to be Characterized Resistors Sheet Resistance, Nsquare Resistor MOS Capacitors Flatband Voltage, Threshold Voltage, Oxide Thickness, Oxide Charges, Substrate

More information

Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Exam 1 ` March 22, 2018

Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Exam 1 ` March 22, 2018 Department of Electrical and Computer Engineering, Cornell University ECE 3150: Microelectronics Spring 2018 Exam 1 ` March 22, 2018 INSTRUCTIONS: Every problem must be done in the separate booklet Only

More information

CHAPTER 5 EFFECT OF GATE ELECTRODE WORK FUNCTION VARIATION ON DC AND AC PARAMETERS IN CONVENTIONAL AND JUNCTIONLESS FINFETS

CHAPTER 5 EFFECT OF GATE ELECTRODE WORK FUNCTION VARIATION ON DC AND AC PARAMETERS IN CONVENTIONAL AND JUNCTIONLESS FINFETS 98 CHAPTER 5 EFFECT OF GATE ELECTRODE WORK FUNCTION VARIATION ON DC AND AC PARAMETERS IN CONVENTIONAL AND JUNCTIONLESS FINFETS In this chapter, the effect of gate electrode work function variation on DC

More information

Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Due on March 01, 2018 at 7:00 PM

Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Due on March 01, 2018 at 7:00 PM Department of Electrical and Computer Engineering, Cornell University ECE 3150: Microelectronics Spring 2018 Homework 4 Due on March 01, 2018 at 7:00 PM Suggested Readings: a) Lecture notes Important Note:

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Chapter 2 MOS Transistor theory

Chapter 2 MOS Transistor theory Chapter MOS Transistor theory.1 Introduction An MOS transistor is a majority-carrier device, which the current a conductg channel between the source and the dra is modulated by a voltage applied to the

More information

Content. MIS Capacitor. Accumulation Depletion Inversion MOS CAPACITOR. A Cantoni Digital Switching

Content. MIS Capacitor. Accumulation Depletion Inversion MOS CAPACITOR. A Cantoni Digital Switching Content MIS Capacitor Accumulation Depletion Inversion MOS CAPACITOR 1 MIS Capacitor Metal Oxide C ox p-si C s Components of a capacitance model for the MIS structure 2 MIS Capacitor- Accumulation ρ( x)

More information

MOS Transistor I-V Characteristics and Parasitics

MOS Transistor I-V Characteristics and Parasitics ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes

More information

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

GaN based transistors

GaN based transistors GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1-x N barrier i-gan Buffer i-sic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute

More information

The Intrinsic Silicon

The Intrinsic Silicon The Intrinsic ilicon Thermally generated electrons and holes Carrier concentration p i =n i ni=1.45x10 10 cm-3 @ room temp Generally: n i = 3.1X10 16 T 3/2 e -1.21/2KT cm -3 T= temperature in K o (egrees

More information

Charge Storage in the MOS Structure. The Inverted MOS Capacitor (V GB > V Tn )

Charge Storage in the MOS Structure. The Inverted MOS Capacitor (V GB > V Tn ) The Inverted MO Capacitor (V > V Tn ) We consider the surface potential as Þxed (ÒpinnedÓ) at φ s,max = - φ p φ(x).5 V. V V ox Charge torage in the MO tructure Three regions of operation: Accumulation:

More information

Electrochemistry of Semiconductors

Electrochemistry of Semiconductors Electrochemistry of Semiconductors Adrian W. Bott, Ph.D. Bioanalytical Systems, Inc. 2701 Kent Avenue West Lafayette, IN 47906-1382 This article is an introduction to the electrochemical properties of

More information

ECE321 Electronics I

ECE321 Electronics I ECE321 Electronics I Lecture 4: Physics of Semiconductor iodes Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: pzarkesh.unm.edu Slide: 1 Review of Last

More information