# ECE-305: Spring 2018 Exam 2 Review

Size: px
Start display at page:

Transcription

1 ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp ) Chapter 5 (pp ) Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu /13/018 Bermel ECE 305 S18 1

2 Key topics to review Minority carrier diffusion equation Band structures PN junctions /13/018 Bermel ECE 305 S18

3 Semiconductor equations: key cases p t D p d p dx p t p G L /13/018 Bermel ECE 305 S18 3

4 How to solve (some) Exam problems Step 1: From material information (semiconductor, doping, etc.), calculate carrier densities, Fermi level, etc. Start with the majority carriers, =, =. Then get the other carrier from = Step : Use band-diagram to calculate potential profile, electric field, = /, or = /, and =, etc. For homogenous semiconductor with a battery attached, = /. Step 3: Decide if this is drift-related problem (resistivity, velocity, mobility, etc.), or a diffusion related problem (light turning on-off, etc.) Step 4A: For a drift-problem use = +. For, you may be given a number, or table, or diffusion coefficient, etc. Learn how to read such a table. Step 4B: For a diffusion problem, read carefully for clues to simplify the minority carrier equation. /13/018 Bermel ECE 305 S18 4

5 How to solve equations Step 4B: Two general types of minority diffusion problem. i) Determine if electron or the hole is the minority carrier. ii) If holes are the minority carriers, write the equation: p t D p d p dx p t p G L iii) iv) If steady-state, drop the time-derivative. If transient, keep the time derivative. If spatially uniform, drop the diffusion term. Without light, drop the generation term. If the region is very short, drop the recombination term. Choose the solutions from the following table. Use the boundary conditions to complete solution. /13/018 Bermel ECE 305 S18 5

6 How to solve equations Transient p t D p d p dx p t p G L Steady State =, 0 = d Δ + Δ solution Δ = G + Boundary condition for B: Concentration before light was turned on? solution Δ = + + If, Δ = + + BC to determine A and B: Concentration at leftmost and rightmost points /13/018 Bermel ECE 305 S18 6

7 eq. energy band diagram E F E F 1) Begin with E F ) Draw the E-bands where you know the carrier density 3) Electrostatic potential by flipping E-band upside down. 4) E-field from slope 5) n(x), p(x) from the E-band diagram 6) rho(x) from n(x) and p(x) 7) diffusion current from (5) or from (6) E C x E C ref qv x E x 1 q de C x dx /13/018 Bermel ECE 305 S18 7

8 energy band diagram E E C x E C qv x E C E F E i E V de C x dx q dv x dx qe x x n x 0 x x p x /13/018 Bermel ECE 305 S18 8

9 Short-cut to Band-diagram Neutral Space Charge Neutral ND N A Vacuum level 1 E C E V E F /13/018 is equivalent to solving the Poisson equation Bermel ECE 305 S18 9

10 p-n Junction Devices Symbols N A N P N D Finding hotspot /13/018 Bermel ECE 305 S18 10

11 What is a Diode good for.? solar cells GaAs lasers Organic LED Avalanche Photodiode GaN lasers image.google.com /13/018 Bermel ECE 305 S18 11

12 carrier densities vs. x log 10 nx,log 10 px n 0N N D p 0P N A p 0N n i N D n 0 p n i N A N x n x p x P /13/018 Bermel ECE 305 S18 1

13 the depletion approximation N r r qn D P de dx r x K S e 0 x n x p x r qn A d V Se 0 D A K q p n N N dx N D x n N A x p /13/018 Bermel ECE 305 S18 13

14 Depletion Regions in Homojunctions Neutral N Space Charge D N A Neutral x n x p N D x n N A x p x n kse 0 q N D N A N N V A D bi qv bi qndx qn n Ax k e k e s p 0 s 0 x p kse 0 q N A ND N N V A D bi Can you solve the same problem for a hetero-junction? 14 /13/018 Bermel ECE 305 S18

15 Key results for PN junctions é W K Se 0 ê ë q E é 0 ê ë qv bi K s e 0 N A N D VN D N A V bi V ù bi ú û N D N A N A N D ù ú û 1/ 1/ E 0 V bi W ( ) N E x n x p x P W x n x P x n N A N A N D W V bi k T B q ln N N D A n i N D x n N A x P x p N D N A N D W /13/018 Bermel ECE 305 S18 V x x p ò x E x dx 15

16 Built-in Potential: heterojunctions qv bi 1 1 E g, qv bi E g, 1 1 qv i E 1 1 b g, N N E N AND k T ln 1 N N e A D g, kbt ln kbt ln 1 NV, NC, 1 B E g, / k B V, C, 1 T /13/018 Bermel ECE 305 S18 16

17 Interface Boundary Conditions: heterojunctions D E = (D/kεo) x n x n x p x p position position D K e E(0 ) K e E(0 ) D E K K (0 ) E(0 ) Displacement is continuous across the interface, but field need not be.. /13/018 Bermel ECE 305 S

18 equilibrium e-band diagram E qv bi E C E F V A 0 I 0 E F E V W x x n /13/018 Bermel ECE 305 S18 18 x p

19 e-band diagram under forward bias E V A 0 E C E F V bi V A V 0 V A > 0 E V W x x n The applied voltage drops across the junction, but /13/018 Bermel ECE 305 S18 x p 1

20 QFL s split E V 0 E C F n V bi V A V A > 0 F n > F p qv A F p E V W x x n /13/018 Bermel ECE 305 S18 x p

21 e-band diagram under reverse bias E V bi V A V bi V R V 0 E C F p V A < 0 F n F n < F p E V W /13/018 x 3 p x n x

22 one-sided junction N E x V A < 0 P N D >> N A x n x p >> x n V A > 0 x p x /13/018 Bermel ECE 305 S18 4

23 key points (one-sided NP junctions) V bi k T B q ln N N D A n i é W K Se 0 ê ë qn A V bi V A ù ú û 1/ W µ V bi V A W µ 1 N A E 0 V bi V A W E 0 µ V bi V A E 0 µ N A /13/018 Bermel ECE 305 S18 5

24 Applying a Bias: Poisson Equation qv bi E C -E F E F -E V q(v bi -V) -qv E C -F n F p -E V /13/018 Bermel ECE 305 S18 6

25 Flat Quasi-Fermi Level up to Junction E C E V E C J n J p E V /13/018 Bermel ECE 305 S18 7

26 One Sided Minority Diffusion Can calculate current anywhere, let us solve the problem where it is the easiest q(v bi -V) Steady state Acceptor doped dj n 1 n r n t q dx g n -V F p -E V J n qn E n dn qdn dx 0 n d n D dx /13/018 Bermel ECE 305 S18 8

27 Boundary Conditions n( x 0 ) n e p( x 0 ) n e i i ( F E ) n ( F E ) p i i n(0 ) n(0 ) n(0 ) n N i A V e G qv A 1 V G 0 ( Fn Fp ) i i np n e n e qv A p(0 ) N A q(v bi -V A ) ni qva n(0 ) e N A -V A F p F n N A /13/018 Bermel ECE 305 S18 9

28 Right Boundary Condition n( x W ) i n( x W ) 0 p p n N A E C V E V /13/018 Bermel ECE 305 S18 30

29 Example: One Sided Minority Diffusion d n 0 D dx N n( x, t) C Dx V /13/018 x W, n( x W ) 0 C DW p p p ni 0', ( 0) qv 1 A x n x e C N n i (, ) qv A x n x t e 1 1 N A W A p Bermel ECE 305 S18 31

30 Electron & Hole Fluxes n i ( ) qv A n x e 1 1 N A x W p J qn E qd n N N N dn qdn ni qv A J n qdn e 1 dx W N x0 p A n F n F p dp qdp ni qv A J p qdp e 1 dx W N x0' n D p /13/018 Bermel ECE 305 S18 3

31 Exam Equation Sheet /13/018 Bermel ECE 305 S18 33

32 Exam Equation Sheet /13/018 Bermel ECE 305 S18

33 Exam Fall 016 /13/018 Bermel ECE 305 S18 35

34 Exam Fall 016 /13/018 Bermel ECE 305 S18 36

35 Exam Fall 016 /13/018 Bermel ECE 305 S18 37

36 Exam Fall 016 /13/018 Bermel ECE 305 S18 38

37 Exam Fall 016 /13/018 Bermel ECE 305 S18 39

38 Exam Fall 016 /13/018 Bermel ECE 305 S18 40

39 Review Questions 1) If you apply negative bias to a terminal, which direction does the band move? ) What is the difference between Fermi & Quasi-Fermi levels? 3) How can we get away with solving just the MCDE in certain cases? 4) What are the most basic parameters of a p-n junction, that can be used to calculate everything else? /13/018 Bermel ECE 305 S18 41

### ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE)

ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu Pierret, Semiconductor

### ( )! N D ( x) ) and equilibrium

ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n- type silicon wafer ( N D = 1 15 cm - 3 ) with a heavily doped thin layer at the surface (surface concentration,

### Semiconductor Junctions

8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss

### Chapter 7. The pn Junction

Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting

### ECE-305: Spring 2018 Final Exam Review

C-305: Spring 2018 Final xam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapters 10 and 11 (pp. 371-385, 389-403) Professor Peter Bermel lectrical and Computer ngineering Purdue University,

### ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University

NAME: PUID: : ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University This is a closed book exam You may use a calculator and the formula sheet Following the ECE policy, the calculator

### ECE-305: Fall 2017 Metal Oxide Semiconductor Devices

C-305: Fall 2017 Metal Oxide Semiconductor Devices Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel lectrical and Computer ngineering Purdue

### Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics

### Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

### Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013

Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance

### Thermionic emission vs. drift-diffusion vs. p-n junction

6.772/SMA5111 - Compound Semiconductors Lecture 4 - Carrier flow in heterojunctions - Outline A look at current models for m-s junctions (old business) Thermionic emission vs. drift-diffusion vs. p-n junction

### Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is

CHAPTER 7 The PN Junction Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is uniformly doped with donor atoms.

### ECE-305: Spring Carrier Action: II. Pierret, Semiconductor Device Fundamentals (SDF) pp

ECE-305: Spring 015 Carrier Action: II Pierret, Semiconductor Device Fundamentals (SDF) pp. 89-104 Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA

### EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30

### The Law of the Junction Revisited. Mark Lundstrom Network for Computational Nanotechnology and Purdue University ( ). (1)

The Law of the Junction Revisited Mark Lundstrom Network for Computational Nanotechnology and Purdue University Consider a one-sided, short base diode like that shown in Fig.. We usually analyze the I-V

### Semiconductor Physics and Devices

The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation

### Solar Cell Physics: recombination and generation

NCN Summer School: July 2011 Solar Cell Physics: recombination and generation Prof. Mark Lundstrom lundstro@purdue.edu Electrical and Computer Engineering Purdue University West Lafayette, Indiana USA

### UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.

### Session 6: Solid State Physics. Diode

Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between

### 1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

### V BI. H. Föll: kiel.de/matwis/amat/semi_en/kap_2/backbone/r2_2_4.html. different electrochemical potentials (i.e.

Consider the the band diagram for a homojunction, formed when two bits of the same type of semicondutor (e.g. Si) are doped p and ntype and then brought into contact. Electrons in the two bits have different

### Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

### Minority Carrier Diffusion Equation (MCDE)

ECE-305: Spring 2015 Minority Carrier Diffusion Equation (MCDE) Professor Mark undstrom Electrical and Computer Engineering Purdue University, West afayette, IN USA lundstro@purdue.edu Pierret, Semiconductor

### 16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion

### ECE 340 Lecture 21 : P-N Junction II Class Outline:

ECE 340 Lecture 21 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition

### ECE 305 Exam 3: Spring 2015 March 6, 2015 Mark Lundstrom Purdue University

NAME: PUID: : ECE 305 Exam 3: March 6, 2015 Mark Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula sheet at the end of this exam Following the ECE policy,

### Lecture 17 - p-n Junction. October 11, Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium

6.72J/3.43J - Integrated Microelectronic Devices - Fall 22 Lecture 17-1 Lecture 17 - p-n Junction October 11, 22 Contents: 1. Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium

### Ideal Diode Equation II + Intro to Solar Cells

ECE-35: Spring 15 Ideal Diode Equation II + Intro to Solar Cells Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu Pierret, Semiconductor

### n N D n p = n i p N A

Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped

### For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.

Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The

### Lecture 27: Introduction to Bipolar Transistors

NCN www.nanohub.org ECE606: Solid State Devices Lecture 27: Introduction to ipolar Transistors Muhammad Ashraful Alam alam@purdue.edu Alam ECE 606 S09 1 ackground E C E C ase! Point contact Germanium transistor

### Fundamentals of Semiconductor Physics

Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of

### ECE-305: Fall 2017 MOS Capacitors and Transistors

ECE-305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel Electrical and Computer Engineering Purdue

### Getting J e (x), J h (x), E(x), and p'(x), knowing n'(x) Solving the diffusion equation for n'(x) (using p-type example)

6.012 - Electronic Devices and Circuits Lecture 4 - Non-uniform Injection (Flow) Problems - Outline Announcements Handouts - 1. Lecture Outline and Summary; 2. Thermoelectrics Review Thermoelectricity:

### Semiconductor Device Physics

1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle

### Solid State Electronics. Final Examination

The University of Toledo EECS:4400/5400/7400 Solid State Electronic Section elssf08fs.fm - 1 Solid State Electronics Final Examination Problems Points 1. 1. 14 3. 14 Total 40 Was the exam fair? yes no

### Section 12: Intro to Devices

Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon

### Midterm I - Solutions

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed

### Energy Bands & Carrier Densities

Notes for ECE-606: Spring 03 Energy Bands & Carrier Densities Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu /7/3 Key topics

### Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.)

Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Outline 1. Overview of MOS electrostatics under bias 2. Depletion regime 3. Flatband 4. Accumulation regime

### Effective masses in semiconductors

Effective masses in semiconductors The effective mass is defined as: In a solid, the electron (hole) effective mass represents how electrons move in an applied field. The effective mass reflects the inverse

### Recitation 17: BJT-Basic Operation in FAR

Recitation 17: BJT-Basic Operation in FAR BJT stands for Bipolar Junction Transistor 1. Can be thought of as two p-n junctions back to back, you can have pnp or npn. In analogy to MOSFET small current

### Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure

Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with

### Bipolar Junction Transistors: Solving Ebers-Moll Problems

C 305: Fall 016 ipolar Junction Transistors: Solving bers-moll Problems Professor Peter ermel lectrical and Computer ngineering Purdue University, West Lafayette, N USA pbermel@purdue.edu Pierret, Semiconductor

### Introductory Nanotechnology ~ Basic Condensed Matter Physics ~

Introductory Nanotechnology ~ Basic Condensed Matter Physics ~ Atsufumi Hirohata Department of Electronics Quick Review over the Last Lecture Classic model : Dulong-Petit empirical law c V, mol 3R 0 E

### The pn junction. [Fonstad, Ghione]

The pn junction [Fonstad, Ghione] Band diagram On the vertical axis: potential energy of the electrons On the horizontal axis: now there is nothing: later we ll put the position qf s : work function (F

### ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017

NAME: PUID: ECE 305 Fall 017 Final Exam (Exam 5) Wednesday, December 13, 017 This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the ECE policy,

### ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline:

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: Depletion Approximation Step Junction Things you should know when you leave Key Questions What is the space charge region? What are the

### Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline

6.012 - Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline Review Depletion approimation for an abrupt p-n junction Depletion charge storage and depletion capacitance

### Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1

Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode

### 6.012 Electronic Devices and Circuits

Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3

### Schottky Rectifiers Zheng Yang (ERF 3017,

ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function

### UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu.

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2009 Professor Chenming Hu Midterm I Name: Closed book. One sheet of notes is

### ECE 305: Fall MOSFET Energy Bands

ECE 305: Fall 2016 MOSFET Energy Bands Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu Pierret, Semiconductor Device Fundamentals

### Lecture 3 Semiconductor Physics (II) Carrier Transport

Lecture 3 Semiconductor Physics (II) Carrier Transport Thermal Motion Carrier Drift Carrier Diffusion Outline Reading Assignment: Howe and Sodini; Chapter 2, Sect. 2.4-2.6 6.012 Spring 2009 Lecture 3 1

### ρ ρ LED access resistances d A W d s n s p p p W the output window size p-layer d p series access resistance d n n-layer series access resistance

LED access resistances W the output window size p-layer series access resistance d p n-layer series access resistance d n The n-layer series access resistance R = ρ s n where the resistivity of the n-layer

### Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

### Semiconductor Device Physics

1 emiconductor Device Physics Lecture 8 http://zitompul.wordpress.com 2 0 1 3 emiconductor Device Physics 2 M Contacts and chottky Diodes 3 M Contact The metal-semiconductor (M) contact plays a very important

### Schottky diodes. JFETs - MESFETs - MODFETs

Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different

### PN Junction and MOS structure

PN Junction and MOS structure Basic electrostatic equations We will use simple one-dimensional electrostatic equations to develop insight and basic understanding of how semiconductor devices operate Gauss's

### B12: Semiconductor Devices

B12: Semiconductor Devices Example Sheet 2: Solutions Question 1 To get from eq. (5.70) of the notes to the expression given in the examples sheet, we simply invoke the relations n 0 p 0, n 0 n 0. In this

### Lecture 16 The pn Junction Diode (III)

Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter

### Classification of Solids

Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

### Metal Semiconductor Contacts

Metal Semiconductor Contacts The investigation of rectification in metal-semiconductor contacts was first described by Braun [33-35], who discovered in 1874 the asymmetric nature of electrical conduction

### Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)

### Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction,

Peak Electric Field Junction breakdown occurs when the peak electric field in the P junction reaches a critical value. For the + P junction, qa E ( x) ( xp x), s W dep 2 s ( bi Vr ) 2 s potential barrier

### Lecture 20 - p-n Junction (cont.) October 21, Non-ideal and second-order effects

6.70J/3.43J - Integrated Microelectronic Devices - Fall 00 Lecture 0-1 Lecture 0 - p-n Junction (cont.) October 1, 00 Contents: 1. Non-ideal and second-order effects Reading assignment: del Alamo, Ch.

### Section 12: Intro to Devices

Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

### Lecture-4 Junction Diode Characteristics

1 Lecture-4 Junction Diode Characteristics Part-II Q: Aluminum is alloyed into n-type Si sample (N D = 10 16 cm 3 ) forming an abrupt junction of circular cross-section, with an diameter of 0.02 in. Assume

### Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

### Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

### CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki

CHAPTER 4: P-N P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers

### This is the 15th lecture of this course in which we begin a new topic, Excess Carriers. This topic will be covered in two lectures.

Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 15 Excess Carriers This is the 15th lecture of this course

### BJT - Mode of Operations

JT - Mode of Operations JTs can be modeled by two back-to-back diodes. N+ P N- N+ JTs are operated in four modes. HO #6: LN 251 - JT M Models Page 1 1) Forward active / normal junction forward biased junction

### SOLUTIONS: ECE 606 Homework Week 10 Mark Lundstrom. Purdue University. (Revised 3/29/13)

ECE- 66 SOLUTIOS: ECE 66 Homework Week 1 Mark Lundstrom (Revised 3/9/13) 1) In a forward- biased P junction under low- injection conditions, the QFL s are aroximately flat from the majority carrier region

### PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Monday, November 11, 013 1 Introduction Chapter 4: we considered the semiconductor

### Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor?

Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor? 1 Carrier Motion I Described by 2 concepts: Conductivity: σ

### L5: Surface Recombination, Continuity Equation & Extended Topics tanford University

L5: Surface Recombination, Continuity Equation & Extended Topics EE 216 : Aneesh Nainani 1 Announcements Project Select topic by Jan 29 (Tuesday) 9 topics, maximum 4 students per topic Quiz Thursday (Jan

### Recombination: Depletion. Auger, and Tunnelling

Recombination: Depletion Region, Bulk, Radiative, Auger, and Tunnelling Ch 140 Lecture Notes #13 Prepared by David Gleason We assume: Review of Depletion Region Recombination Flat Quantum Fermi Levels

### Electronic Supporting Information

Characterization of Planar Lead Halide Perovskite Solar Cells by Impedance Spectroscopy, Open Circuit Photovoltage Decay and Intensity-Modulated Photovoltage/Photocurrent Spectroscopy Adam Pockett 1, Giles

### PN Junction. Ang M.S. October 8, Maxwell s Eqautions Review : Poisson s Equation for PNJ. Q encl S. E ds. σ = dq ds. ρdv = Q encl.

PN Junction Ang M.S. October 8, 0 Reference Sedra / Smith, M icroelectronic Circuits Maxwell s Eqautions Review : Poisson s Equation for PNJ. Gauss Law for E field The total enclosed charge Q encl. insde

### Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

### Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

### ELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating

ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and Self-Heating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor

### Simulation of Quantum Dot p-i-n Junction Solar Cell using Modified Drift Diffusion Model

International Journal of Pure and Applied Physics. ISSN 0973-1776 Volume 13, Number 1 (017), pp. 59-66 Research India Publications http://www.ripublication.com Simulation of Quantum Dot p-i-n Junction

### Semiconductor Physics. Lecture 6

Semiconductor Physics Lecture 6 Recap pn junction and the depletion region Driven by the need to have no gradient in the fermi level free carriers migrate across the pn junction leaving a region with few

### Lecture 15 The pn Junction Diode (II)

Lecture 15 The pn Junction Diode (II I-V characteristics Forward Bias Reverse Bias Outline Reading Assignment: Howe and Sodini; Chapter 6, Sections 6.4-6.5 6.012 Spring 2007 Lecture 15 1 1. I-V Characteristics

### MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap ,

MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor p-n junction diodes Reading: Kasap 6.1-6.5, 6.9-6.12 Metal-semiconductor contact potential 2 p-type n-type p-type n-type Same semiconductor

### Semiconductor Integrated Process Design (MS 635)

Semiconductor Integrated Process Design (MS 635) Instructor: Prof. Keon Jae Lee - Office: 응용공학동 #4306, Tel: #3343 - Email: keonlee@kaist.ac.kr Lecture: (Tu, Th), 1:00-2:15 #2425 Office hour: Tues & Thur

### ECE 440 Lecture 28 : P-N Junction II Class Outline:

ECE 440 Lecture 28 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition

### Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003

6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 16-1 Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. I-V characteristics (cont.) 2. Small-signal

### EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions

EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 pn Junction p-type semiconductor in

### Lecture contents. Metal-semiconductor contact

1 Lecture contents Metal-semiconuctor contact Electrostatics: Full epletion approimation Electrostatics: Eact electrostatic solution Current Methos for barrier measurement Junctions: general approaches,

### PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the

### junctions produce nonlinear current voltage characteristics which can be exploited

Chapter 6 P-N DODES Junctions between n-and p-type semiconductors are extremely important foravariety of devices. Diodes based on p-n junctions produce nonlinear current voltage characteristics which can

### Concepts & Equations. Applications: Devices

Concepts & Equations Applications: Devices Concepts & Equations Applications: Devices Current = (charge) x (velocity) Ch1-4 Ch5-6 Concepts & Equations Applications: Devices Concepts & Equations Ch1 Landscape

### PHYS208 P-N Junction. Olav Torheim. May 30, 2007

1 PHYS208 P-N Junction Olav Torheim May 30, 2007 1 Intrinsic semiconductors The lower end of the conduction band is a parabola, just like in the quadratic free electron case (E = h2 k 2 2m ). The density

### The 5 basic equations of semiconductor device physics: We will in general be faced with finding 5 quantities:

6.012 - Electronic Devices and Circuits Solving the 5 basic equations - 2/12/08 Version The 5 basic equations of semiconductor device physics: We will in general be faced with finding 5 quantities: n(x,t),