MOS transistors (in subthreshold)
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- Phyllis Dalton
- 5 years ago
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1 MOS tanito (in ubthhold) Hitoy o th Tanito Th tm tanito i a gnic nam o a olid-tat dvic with 3 o mo tminal. Th ild-ct tanito tuctu wa it dcibd in a patnt by J. Lilinld in th 193! t took about 4 ya bo MOS tanito w in ma poduction. Hitoy o MOSFET Rviw o Smiconducto What i a MOSFET? CMOS? How phyic o tanito and voltag-nitiv nv mmban channl a latd MOS capacito tuctu Suac: accumulation, dpltion, invion Capacitiv divid: Th back-gat/body ct paamt kappa MOS tanito in ubthhold Th it tanito (point-contact bipola) abicatd at Bll Lab in 1947 (Badn, Battain, Shockly). MOS tanito w not commicalizd until mid 197. Co-ction o a complmntay pai o Fild-Ect Tanito (FET) Top and Sid Viw o Fild-Ect Tanito (FET) Top Gat oxid gat Fild oxid ouc dain ouc dain W p + p + n wll ubtat Sid L End pfet nfet ubtat FOX Fild Oxid TOX Gat oxid hol cai Symbol o tanito nfet tminology pn junction & ouc pn junction and ouc Gat Putting poitiv chag h attact lcton Dain (o lcton) At high voltag p + p + pfet n wll ubtat nfet (o lcton) At low voltag NE1: avli.ini.uzh.ch/clawiki 1
2 Engy Engy Engy Gat Putting ngativ chag h attact hol pfet tminology (o hol) At high voltag Th built-in potntial in th pn junction cat an ngy bai. Contolling th bai hight contol th diuion cunt. E c Dain (o hol) At low voltag E v Small Vg, Vd= ++++ Lag Vg, Vd= Channl Dain Channl Dain Lag Vg, Lag Vd Mauing voltag-dpndnt nv mmban cunt Channl Dain Hodgkin & Huxly 1952 NE1: avli.ini.uzh.ch/clawiki 2
3 Compaing tanito and mmban channl cunt Nuon channl and Tanito Both dpnd on Boltzmann ditibution. Tanito 4mV/-old Nuon Mmban ionic conductanc i xponntially dpndnt on th voltag aco th nuon mmban. Th population o opn channl dpnd xponntially on potntial aco bai. Tanito Cunt low in tanito i xponntially dpndnt on bai hight. Th population o cai dpnd xponntially on th bai hight. Bulk (back gat) p + n-typ MOSFET ouc gat dain V b Dpltion gion All voltag a ncd to V b = V V, V g V d V Rgim o opation o FET (dpndnt on ) Cuto - Suac i accumulatd Subthhold (Wak nvion) Rgim Cunt low though diuion Abov thhold (Stong nvion) Rgim Cunt low though dit nft cuv: v. Subthhold nfet: Cunt i diuion cunt n + z n + E c Cunt dn qd dz N=cai dnity D=diuion contant Diuion contant Concntation gadint NE1: avli.ini.uzh.ch/clawiki 3
4 Subthhold nfet: Cunt i diuion cunt (uac potntial) W hav quation o ubthhold cunt, but w don t dictly contol th uac potntial N n + z n + / U T N q o d / U T N N q d o dn / U T d / U T / U T qw D ( ) n dz q q q( V ) q q q( V ) d d E c q qd dn N N dz L dn qw D n dz / U T d / U T / U ( ) T Fwd Rv d N=cai dnity p unit volum W=channl width L=channl lngth D=diuion contant q o =built-in voltag How i th uac potntial latd to th gat voltag? W nd to undtand ct o gat on uac potntial MOS capacito tuctu Gat oxid Fild gat oxid ouc dain Polyilicon o mtal gat Gat oxid p + p + n wll ubtat pfet nfet Mobil Hol p-ubtat Mobil lcton MOS capacito tuctu: accumulation < MOS capacito tuctu: lat band =V b ~ Thi i calld accumulation th uac i accumulatd with majoity cai; it i mad mo p-typ Flat band majoity cai dnity i contant and qual to dopant dnity p-ubtat NE1: avli.ini.uzh.ch/clawiki 4
5 MOS capacito tuctu: dpltion < <V T V T =Thhold voltag MOS capacito tuctu: invion >V T Fixd ion p-ubtat Dpltion Majoity cai puhd away Fixd ion nd gat chag ild lin Dpltion gion pac chag gion omd p-ubtat nvion Mobil lcton a inducd at th uac Suac i invtd it bcom n-typ Thhold i whn mobil chag dnity qual doping dnity What i a dpltion capacito? nlunc o gat on uac potntial gat Conducto nulato Suac Dpltion gion C C dq dv gat Conducto nulato Poibl invion gion Dpltion gion C ox C dp C ox C dp ( kappa ) C ox C C g ox dp = Suac potntial Gat-dpltion capacitiv divid Suac potntial a unction o C ox C dp D Q D How do changing chang? 1. CV=Q 2. Chag Q on i contant 3. Chang V, hold Q contant C ( DV D ) C D ox g dp C DV ( C C ) D ox g ox dp D C ox DV C C g ox dp dpltion Slop= invion- uac potntial i pinnd NE1: avli.ini.uzh.ch/clawiki 5
6 Equation o Subthhold nfet nfet cuv: v ( / U T d / U T ) owad cunt v cunt Slop = /U T / U T d / U T nft Thhold Rgim o Subthhold Opation (dpndnc on ) Thhold cunt Tiod/Lina Rgion ( g ) / U T (1 ( Vd ) / U T ) d =.5*(xtapolatd valu) Satuation Rgion Thhold Voltag (V T ): ( g ) / U T nfet ubthhold Opation V in unit o U T nfet dain cuv: v Tiod/Lina Rgion Ohmic gion V V V (1 ) g d Satuation gion Satuation Rgion, > a w U T Vg V 4kT 1 mv q NE1: avli.ini.uzh.ch/clawiki 6
7 What about th p-xponntial? Band Diagam o ubthhold nfet com om th built-in bai and th doping concntation. t tak th om ( g ) / U T 2 T N U T xp T U T Dimnionl ouc concntation U T : diuivity U T : acto o dnity o tat Concntation at ouc ducd by bai Dain dnity i zo p + Lina gim V d 1 mv Satuation gim 1 mv p-typ MOSFET Band Diagam o ubthhold pfet wll (back gat) ouc gat dain p + p + n + V w n + n p + p + All voltag a ncd to V w = d V, V, V g d V V d V w Lina gim V d 1 mv Satuation gim 1 mv Equation o Subthhold pfet pfet ubthhold Opation V in unit o U T ( / U T / U T / U T ) owad v / U T cunt cunt Tiod/Lina Rgion V (1 ) g d Satuation Rgion, > a w U T Vg V NE1: avli.ini.uzh.ch/clawiki 7
8 nfet unctional bhavio pfet unctional bhavio Cunt ink conductanc Tanconductanc Tanconductanc Rnc potntial conductanc Cunt ouc Cicuit qution THE END V in V out V b What i V out v. V in? Why i thi cicuit calld a ouc ollow? How can you u thi cicuit to mau kappa? Nxt wk: What i th tanito thhold? Abov thhold opation. Dain conductanc-ealy ct NE1: avli.ini.uzh.ch/clawiki 8
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