EE105  Spring 2007 Microelectronic Devices and Circuits. Structure and Symbol of MOSFET. MOS Capacitor. MetalOxideSemiconductor (MOS) Capacitor


 Roland Golden
 3 years ago
 Views:
Transcription
1 EE105  Spring 007 Microelectronic Device and ircuit MetalOideSemiconductor (MOS) apacitor Lecture 4 MOS apacitor The MOS tructure can be thought of a a parallelplate capacitor, with the top plate being the poitive plate, ide being the dielectric, and Si ubtrate being the negative plate. (We are auming Pubtrate.) Structure and Symbol of MOSFET MOS apacitor = = Thi device i ymmetric, o either of the n+ region can be ource or drain. 3 MOS = Metal Oide Semiconductor Metal i more commonly a heavily doped (n+ or p+) polyilicon layer NMOS ptype ubtrate PMOS ntype ubtrate 4
2 harge Ditribution at Thermal Equilibrium Potential Ditribution for MOS apacitor (n+ Gate on psubtrate with N a =10 17 cm 3 ) φ + = 550 m n (half of bandgap energy) Depletion Width in Subtrate Na φp = 60 m log Gate charge at poly/ide interface Bulk charge in the letion region of Si ubtrate Oide i an inulator No current flowing through ide 5 Step to contruct the potential ditribution: Gate potential i contant (550 m for n+ gate, 550 m for p+ gate) Potential of neutral ubtrate i contant, it value end on doping onnect the potential between gate and neutral ubtrate (qualitatively) Potential varie linearly in ide Potential varie quadratically in the letion region of ubtrate 6 Flatband oltage < : Accumulation oltage required to produce a flat potential profile = ( φ φ ) n+ p Eample: 17 3 Na = 10 cm, φp = 60m 7 = 40m φn+ = 550m = 970m No net charge at flatband Majority carrier (hole for p ubtrate) accumulate at the SiSiO interface Occur when gate bia i below flatband voltage: < harge ditribution: Two delta function QG = ( ) = [F/cm ] t 7 8
3 < < Tn : Depletion The majority carrier in Si near ide interface are leted Occur when gate bia between flatband voltage and threhold voltage harge ditribution: Gate charge at poly/sio interface Fied acceptor ion in letion region Depletion (cont d) + φ φ = + n+ p B qnad qnad = + = d ( ) = t 1+ 1 q N a 9 10 > Tn : Inverion An inverion layer with minority carrier (electron in pubtrate) i developed at SiSiO interface Occur when gate bia i higher than threhold voltage harge ditribution: Gate charge: delta function Inverion layer: delta function Fied impurity charge: contant in letion region 11 Inverion (ont d) Electron concentration at Si SiO interface qφ kt = i = a n ne N φ = φp Threhold voltage: 1 Tn = φ p + q Na ( φp ) After threhold ( > Tn ), φ i pinned at  φ p Inverion charge = 0 at threhold 1
4 Inverion Stop Depletion Q urve for MOS apacitor A imple apprimation i to aume that once inverion happen, the letion region top growing Thi i a good aumption ince the inverion charge i an eponential function of the urface potential Under thi condition: accumulation Q G letion Tn inverion Q B,ma Q ( ) N ( ) Q ( ) Q G Tn B,ma Q ( ) = ( ) Q G Tn B,ma 13 In accumulation, the charge i imply proportional to the applied gatebody bia In inverion, the ame i true In letion, the charge grow lower ince the voltage i applied over a letion region 14 Numerical Eample Numerical Eample: Electric Field in Oide MOS apacitor with ptype ubtrate: 16 3 t = 0nm N a = 5 10 cm alculate flatband: = ( φ + φp ) = (550 ( 40)) = 0.95 n alculate threhold voltage: F/cm = = 6 t 10 cm 1 Tn = φ p + q Na ( φp ) Tn =.95 ( 0.4) + = Apply a gatetobody voltage: =.5 < Device i in accumulation The entire voltage drop i acro the ide: E + φ + φ n p ( 0.4) = = = = 8 10 t t The charge in the ubtrate (body) conit of hole: cm Q = ( ) = /cm B 7 16
5 Numerical Eample: Depletion Region MOS urve In inverion, what the letion region width and charge? B,ma = φ φp = φp φp = φp = 0.8 Q G Q B,ma Q ( ) N X B,ma 1 qn a = X B,ma d,ma = = qna d,ma 144nm QB,ma = qnaxd,ma = /cm 7 Tn ( ) Smallignal capacitance i lope of Q curve apacitance i linear in accumulation and inverion apacitance in letion region i mallet apacitance i nonlinear in letion Tn urve Equivalent ircuit = tot In accumulation mode the capacitance i jut due to the voltage drop acro t In inverion the incremental charge come from the inverion layer (letion region top growing). In letion region, the voltage drop i acro the ide and the letion region = = = t 19 MOS apacitor: n+ Gate on ntype Subtrate φ + = 550 m n Tp t 1 Tp = φn q Nd ( φn) φ n Nd φn = 60 m log
6 MOS apacitor: n+ Gate on ntype Subtrate 1
Lecture 8. MOS (Metal Oxide Semiconductor) Structures
Lecture 8 MOS (Metal Oie Semiconuctor) Structure In thi lecture you will learn: The funamental et of equation governing the behavior of MOS capacitor Accumulation, Flatban, Depletion, an Inverion Regime
More informationLecture 12: MOS Capacitors, transistors. Context
Lecture 12: MOS Capacitors, transistors Context In the last lecture, we discussed PN diodes, and the depletion layer into semiconductor surfaces. Small signal models In this lecture, we will apply those
More informationThermionic Emission Theory
hapter 4. PN and MetalSemiconductor Junction Thermionic Emiion Theory Energy band diagram of a Schottky contact with a forward bia V applied between the metal and the emiconductor. Electron concentration
More informationElectrical Characteristics of MOS Devices
Electrical Characteristics of MOS Devices The MOS Capacitor Voltage components Accumulation, Depletion, Inversion Modes Effect of channel bias and substrate bias Effect of gate oide charges Thresholdvoltage
More informationLecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007
More informationLecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture
More informationLecture 11: MOS Transistor
Lecture 11: MOS Transistor Prof. Niknejad Lecture Outline Review: MOS Capacitors Regions MOS Capacitors (3.8 3.9) CV Curve Threshold Voltage MOS Transistors (4.1 4.3): Overview Crosssection and layout
More informationLecture 04 Review of MOSFET
ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D
More informationLecture 7  PN Junction and MOS Electrostatics (IV) Electrostatics of MetalOxideSemiconductor Structure. September 29, 2005
6.12  Microelectronic Devices and Circuits  Fall 25 Lecture 71 Lecture 7  PN Junction and MOS Electrostatics (IV) Electrostatics of MetalOideSemiconductor Structure September 29, 25 Contents: 1.
More informationMOS: MetalOxideSemiconductor
hapter 5 MOS apacitor MOS: MetalOxideSemiconductor metal ate ate SiO 2 N + SiO 2 N + Si body Pbody MOS capacitor MOS tranitor Semiconductor Device for Interated ircuit (. Hu) Slide 51 hapter 5 MOS
More informationMOS Capacitors ECE 2204
MOS apacitors EE 2204 Some lasses of Field Effect Transistors MetalOxideSemiconductor Field Effect Transistor MOSFET, which will be the type that we will study in this course. MetalSemiconductor Field
More informationLecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005
6.12 Microelectronic Devices and Circuits Fall 25 Lecture 8 1 Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oide Semiconductor Structure (cont.) Contents: October 4, 25 1. Overview
More informationECE606: Solid State Devices Lecture 24 MOSFET nonidealities
EE66: Solid State Devices Lecture 24 MOSFET nonidealities Gerhard Klimeck gekco@purdue.edu Outline ) Flat band voltage  What is it and how to measure it? 2) Threshold voltage shift due to trapped charges
More informationFIELDEFFECT TRANSISTORS
FIELEFFECT TRANSISTORS 1 Semiconductor review 2 The MOS capacitor 2 The enhancementtype NMOS transistor 3 IV characteristics of enhancement MOSFETS 4 The output characteristic of the MOSFET in saturation
More informationECE 340 Lecture 39 : MOS Capacitor II
ECE 340 Lecture 39 : MOS Capacitor II Class Outline: Effects of Real Surfaces Threshold Voltage MOS CapacitanceVoltage Analysis Things you should know when you leave Key Questions What are the effects
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationEE 560 MOS TRANSISTOR THEORY
1 EE 560 MOS TRANSISTOR THEORY PART 1 TWO TERMINAL MOS STRUCTURE V G (GATE VOLTAGE) 2 GATE OXIDE SiO 2 SUBSTRATE ptype doped Si (N A = 10 15 to 10 16 cm 3 ) t ox V B (SUBSTRATE VOLTAGE) EQUILIBRIUM:
More informationLecture 22 FieldEffect Devices: The MOS Capacitor
Lecture 22 FieldEffect Devices: The MOS Capacitor F. Cerrina Electrical and Computer Engineering University of Wisconsin Madison Click here for link to F.C. homepage Spring 1999 0 Madison, 1999II Topics
More informationLecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.)
Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Outline 1. Overview of MOS electrostatics under bias 2. Depletion regime 3. Flatband 4. Accumulation regime
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 2017 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2017 Khanna Lecture Outline! Semiconductor Physics " Band gaps "
More informationMicroelectronic Devices and Circuits Lecture 9  MOS Capacitors I  Outline Announcements Problem set 5 
6.012  Microelectronic Devices and Circuits Lecture 9  MOS Capacitors I  Outline Announcements Problem set 5  Posted on Stellar. Due net Wednesday. Qualitative description  MOS in thermal equilibrium
More informationMOS electrostatic: Quantitative analysis
MOS electrotatic: Quantitative analyi In thi cla, we will Derive analytical expreion for the charge denity, electric field and the electrotatic potential. xpreion for the depletion layer width Decribe
More informationEE105  Fall 2006 Microelectronic Devices and Circuits
EE105  Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 7: MOS Transistor Some Administrative Issues Lab 2 this week Hw 2 due on We Hw 3 will be posted same day MIDTERM
More informationMOS Capacitor MOSFET Devices. MOSFET s. INEL Solid State Electronics. Manuel Toledo Quiñones. ECE Dept. UPRM.
INEL 6055  Solid State Electronics ECE Dept. UPRM 20th March 2006 Definitions MOS Capacitor Isolated Metal, SiO 2, Si Threshold Voltage qφ m metal d vacuum level SiO qχ 2 E g /2 qφ F E C E i E F E v qφ
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationMetalSemiconductor Interfaces. MetalSemiconductor contact. Schottky Barrier/Diode. Ohmic Contacts MESFET. UMass Lowell Sanjeev Manohar
MetalSemiconductor Interface MetalSemiconductor contact Schottky Barrier/iode Ohmic Contact MESFET UMa Lowell 10.5  Sanjeev evice Building Block UMa Lowell 10.5  Sanjeev UMa Lowell 10.5  Sanjeev Energy
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and crosssectional area 100µm 2
More informationECE 305 Exam 5 SOLUTIONS: Spring 2015 April 17, 2015 Mark Lundstrom Purdue University
NAME: PUID: : ECE 305 Exam 5 SOLUTIONS: April 17, 2015 Mark Lundstrom Purdue University This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the
More informationLecture 6 PN Junction and MOS Electrostatics(III) MetalOxideSemiconductor Structure
Lecture 6 PN Junction and MOS Electrostatics(III) MetalOxideSemiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with
More informationan introduction to Semiconductor Devices
an introduction to Semiconductor Devices Donald A. Neamen Chapter 6 Fundamentals of the MetalOxideSemiconductor FieldEffect Transistor Introduction: Chapter 6 1. MOSFET Structure 2. MOS Capacitor 
More informationSECTION: Circle one: Alam Lundstrom. ECE 305 Exam 5 SOLUTIONS: Spring 2016 April 18, 2016 M. A. Alam and M.S. Lundstrom Purdue University
NAME: PUID: SECTION: Circle one: Alam Lundstrom ECE 305 Exam 5 SOLUTIONS: April 18, 2016 M A Alam and MS Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula
More informationECE 342 Electronic Circuits. Lecture 6 MOS Transistors
ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2
More informationFundamentals of the Metal Oxide Semiconductor FieldEffect Transistor
Triode Working FET Fundamentals of the Metal Oxide Semiconductor FieldEffect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the
More information! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cutoff. " Depletion.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!
More informationDepartment of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Due on March 01, 2018 at 7:00 PM
Department of Electrical and Computer Engineering, Cornell University ECE 3150: Microelectronics Spring 2018 Homework 4 Due on March 01, 2018 at 7:00 PM Suggested Readings: a) Lecture notes Important Note:
More informationMOSFET Models. The basic MOSFET model consist of: We will calculate dc current I D for different applied voltages.
MOSFET Model The baic MOSFET model conit of: junction capacitance CBS and CB between ource (S) to body (B) and drain to B, repectively. overlap capacitance CGO and CGSO due to gate (G) to S and G to overlap,
More informationMOS CAPACITOR AND MOSFET
EE336 Semiconductor Devices 1 MOS CAPACITOR AND MOSFET Dr. Mohammed M. Farag Ideal MOS Capacitor Semiconductor Devices Physics and Technology Chapter 5 EE336 Semiconductor Devices 2 MOS Capacitor Structure
More informationWeek 3, Lectures 68, Jan 29 Feb 2, 2001
Week 3, Lectures 68, Jan 29 Feb 2, 2001 EECS 105 Microelectronics Devices and Circuits, Spring 2001 Andrew R. Neureuther Topics: M: Charge density, electric field, and potential; W: Capacitance of pn
More informationESE 570 MOS TRANSISTOR THEORY Part 1. Kenneth R. Laker, University of Pennsylvania, updated 5Feb15
ESE 570 MOS TRANSISTOR THEORY Part 1 TwoTerminal MOS Structure 2 GATE Si Oxide interface n n Mass Action Law VB 2 Chemical Periodic Table Donors American Chemical Society (ACS) Acceptors Metalloids 3 Ideal
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon
More informationIntroduction to CMOS VLSI. Chapter 2: CMOS Transistor Theory. Harris, 2004 Updated by Li Chen, Outline
Introduction to MOS VLSI Design hapter : MOS Transistor Theory copyright@david Harris, 004 Updated by Li hen, 010 Outline Introduction MOS apacitor nmos IV haracteristics pmos IV haracteristics Gate and
More informationElectricity and Magnetism. Capacitance
Electricity and Magnetism apacitance Sources of Electric Potential A potential difference can be created by moving charge from one conductor to another. The potential difference on a capacitor can produce
More informationLecture 4  PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005
6.012  Microelectronic Devices and Circuits  Fall 2005 Lecture 41 Contents: Lecture 4  PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005
More informationLecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:
Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I curve (SquareLaw Model)
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16 Announcements Professor Javey will hold his OH at
More informationECEN 3320 Semiconductor Devices Final exam  Sunday December 17, 2000
Your Name: ECEN 3320 Semiconductor Devices Final exam  Sunday December 17, 2000 1. Review questions a) Illustrate the generation of a photocurrent in a pn diode by drawing an energy band diagram. Indicate
More information! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cutoff. " Depletion.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 9, 019 MOS Transistor Theory, MOS Model Lecture Outline CMOS Process Enhancements Semiconductor Physics Band gaps Field Effects
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An ntype sample of silicon has a uniform density N D = 10 16 atoms cm 3 of arsenic, and a ptype silicon sample has N A = 10 15 atoms cm 3 of boron. For each
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET NType, PType. Semiconductor Physics.
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 217 MOS Transistor Theory, MOS Model Lecture Outline! Semiconductor Physics " Band gaps " Field Effects! MOS Physics " Cutoff
More informationLecture 4  PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium. February 13, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 41 Contents: Lecture 4  PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium February 13, 2003
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 5: January 25, 2018 MOS Operating Regions, pt. 1 Lecture Outline! 3 Regions of operation for MOSFET " Subthreshold " Linear " Saturation!
More informationLecture 17  pn Junction. October 11, Ideal pn junction in equilibrium 2. Ideal pn junction out of equilibrium
6.72J/3.43J  Integrated Microelectronic Devices  Fall 22 Lecture 171 Lecture 17  pn Junction October 11, 22 Contents: 1. Ideal pn junction in equilibrium 2. Ideal pn junction out of equilibrium
More informationMOS Transistor Theory MOSFET Symbols Current Characteristics of MOSFET. MOS Symbols and Characteristics. nmos Enhancement Transistor
MOS Transistor Theory MOSFET Symbols Current Characteristics of MOSFET Calculation of t and Important 2 nd Order Effects SmallSignal Signal MOSFET Model Summary Material from: CMOS LSI Design By Weste
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are
More informationFIELD EFFECT TRANSISTORS:
Chapter 10 FIEL EFFECT TRANITOR: MOFET The following overview gures describe important issues related to the most important electronic device. NUMBER OF ACTIVE EVICE/CHIP MOORE' LAW Gordon Moore, cofounder
More informationLecture 23  The Si surface and the MetalOxideSemiconductor Structure (cont.) April 4, 2007
6.720J/3.43J Integrated Microelectronic Devices Spring 2007 Lecture 231 Lecture 23 The Si surface and the MetalOxideSemiconductor Structure (cont.) April 4, 2007 Contents: 1. Ideal MOS structure under
More informationECE606: Solid State Devices Lecture 22 MOScap Frequency Response MOSFET IV Characteristics
EE66: olid tate evices Lecture 22 MOcap Frequency Response MOFET I haracteristics erhard Klimeck gekco@purdue.edu. Background 2. mall signal capacitances 3. Large signal capacitance 4. Intermediate ummary
More informationSemiconductor Devices. C. Hu: Modern Semiconductor Devices for Integrated Circuits Chapter 5
Semiconductor Devices C. Hu: Modern Semiconductor Devices for Integrated Circuits Chapter 5 Global leader in environmental and industrial measurement Wednesday 3.2. afternoon Tour around facilities & lecture
More informationECE305: Fall 2017 MOS Capacitors and Transistors
ECE305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525530, 563599) Professor Peter Bermel Electrical and Computer Engineering Purdue
More informationLecture 22  The Si surface and the MetalOxideSemiconductor Structure (cont.) April 2, 2007
6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 221 Lecture 22  The Si surface and the MetalOxideSemiconductor Structure (cont.) April 2, 2007 Contents: 1. Ideal MOS structure
More information1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :0011:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:0011:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
More informationMOS Devices and Circuits
hapter 3 Microelectronics and emiconductor Materials MO Devices and ircuits Prepared by Dr. Lim oo King 0 Jan 011 hapter 3 MO Devices and ircuits... 97 3.0 Introduction... 97 3.1 MO apacitor... 97 3.1.1
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and MK Lee 1. The purest semiconductor crystals it is possible
More informationECE321 Electronics I
EE31 Electronics I Lecture 8: MOSET Threshold Voltage and Parasitic apacitances Payman ZarkeshHa Office: EE Bldg. 3B Office hours: Tuesday :3:PM or by appointment Email: payman@ece.unm.edu Slide: 1
More informationClassification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More informationECE305: Fall 2017 Metal Oxide Semiconductor Devices
C305: Fall 2017 Metal Oxide Semiconductor Devices Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525530, 563599) Professor Peter Bermel lectrical and Computer ngineering Purdue
More informationLecture 6  PN Junction and MOS Electrostatics (III) Electrostatics of pn Junction under Bias February 27, 2001
6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 61 Lecture 6 PN Junction and MOS Electrostatics (III) Electrostatics of pn Junction under Bias February 27, 2001 Contents: 1. electrostatics
More informationECE606: Solid State Devices Lecture 23 MOSFET IV Characteristics MOSFET nonidealities
ECE66: Solid State evices Lecture 3 MOSFET I Characteristics MOSFET nonidealities Gerhard Klimeck gekco@purdue.edu Outline 1) Square law/ simplified bulk charge theory ) elocity saturation in simplified
More informationEEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #2: MOSFET Structure and Basic Operation Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Lab 1 this week, report due next week Bring
More informationElectronic Devices and Circuits Lecture 5  pn Junction Injection and Flow  Outline
6.012  Electronic Devices and Circuits Lecture 5  pn Junction Injection and Flow  Outline Review Depletion approimation for an abrupt pn junction Depletion charge storage and depletion capacitance
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) OPEN BOOK Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationLecture 12: MOSFET Devices
Lecture 12: MOSFET Devices GuYeon Wei Division of Engineering and Applied Sciences Harvard University guyeon@eecs.harvard.edu Wei 1 Overview Reading S&S: Chapter 5.1~5.4 Supplemental Reading Background
More informationCharge Storage in the MOS Structure. The Inverted MOS Capacitor (V GB > V Tn )
The Inverted MO Capacitor (V > V Tn ) We consider the surface potential as Þxed (ÒpinnedÓ) at φ s,max =  φ p φ(x).5 V. V V ox Charge torage in the MO tructure Three regions of operation: Accumulation:
More informationAnnouncements. EE105  Fall 2005 Microelectronic Devices and Circuits. Lecture Material. MOS CV Curve. MOSFET Cross Section
Announcements EE0  Fall 00 Microelectronic evices and Circuits ecture 7 Homework, due today Homework due net week ab this week Reading: Chapter MO Transistor ecture Material ast lecture iode currents
More informationLook over. examples 1, 2, 3, 5, 6. Look over. Chapter 25 section 18. Chapter 19 section 5 Example 10, 11
PHYS Look over hapter 5 section 8 examples,, 3, 5, 6 PHYS Look over hapter 7 section 79 Examples 8, hapter 9 section 5 Example 0, Things to Know ) How to find the charge on a apacitor. ) How to find
More informationContent. MIS Capacitor. Accumulation Depletion Inversion MOS CAPACITOR. A Cantoni Digital Switching
Content MIS Capacitor Accumulation Depletion Inversion MOS CAPACITOR 1 MIS Capacitor Metal Oxide C ox psi C s Components of a capacitance model for the MIS structure 2 MIS Capacitor Accumulation ρ( x)
More informationMOSFET: Introduction
E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major
More informationSemiconductor Physics and Devices
EE321 Fall 2015 Semiconductor Phyic and Device November 30, 2015 Weiwen Zou ( 邹卫文 ) Ph.D., Aociate Prof. State Key Lab of advanced optical communication ytem and network, Dept. of Electronic Engineering,
More informationBipolar junction transistor operation and modeling
6.01  Electronic Devices and Circuits Lecture 8  Bipolar Junction Transistor Basics  Outline Announcements Handout  Lecture Outline and Summary; Old eam 1's on Stellar First Hour Eam  Oct. 8, 7:309:30
More informationMENA9510 characterization course: Capacitancevoltage (CV) measurements
MENA9510 characterization course: Capacitancevoltage (CV) measurements 30.10.2017 Halvard Haug Outline Overview of interesting sample structures Ohmic and schottky contacts Why CV for solar cells? The
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationEE105  Fall 2005 Microelectronic Devices and Circuits
EE105  Fall 005 Microelectronic Devices and Circuits ecture 7 MOS Transistor Announcements Homework 3, due today Homework 4 due next week ab this week Reading: Chapter 4 1 ecture Material ast lecture
More informationThe Intrinsic Silicon
The Intrinsic ilicon Thermally generated electrons and holes Carrier concentration p i =n i ni=1.45x10 10 cm3 @ room temp Generally: n i = 3.1X10 16 T 3/2 e 1.21/2KT cm 3 T= temperature in K o (egrees
More informationLecture 13  Carrier Flow (cont.), MetalSemiconductor Junction. October 2, 2002
6.72J/3.43J  Integrated Microelectronic Devices  Fall 22 Lecture 131 Contents: Lecture 13  Carrier Flow (cont.), MetalSemiconductor Junction October 2, 22 1. Transport in spacecharge and highresistivity
More informationGaN based transistors
GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1x N barrier igan Buffer isic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute
More informationII III IV V VI B C N. Al Si P S. Zn Ga Ge As Se Cd In Sn Sb Te. Silicon (Si) the dominating material in IC manufacturing
II III IV V VI B N Al Si P S Zn Ga Ge As Se d In Sn Sb Te Silicon (Si) the dominating material in I manufacturing ompound semiconductors III  V group: GaAs GaN GaSb GaP InAs InP InSb... The Energy Band
More informationECE Semiconductor Device and Material Characterization
EE 483 emiconductor Device and Material haracterization Dr. Alan Doolittle chool of Electrical and omputer Engineering Georgia Institute of Technology As with all of these lecture slides, I am indebted
More informationMOS Capacitors Prof. Ali M. Niknejad Prof. Rikky Muller
EECS 105 Spring 2017, Modue 3 MOS Capacitors Prof. Ai M. Niknejad Prof. Rikky Muer Department of EECS University of Caifornia, Berkeey Announcements Prof. Rikky Muer Wecome to the second haf of EE105!
More informationPart 4: Heterojunctions  MOS Devices. MOSFET Current Voltage Characteristics
MOS Device Uses: Part 4: Heterojunctions  MOS Devices MOSCAP capacitor: storing charge, chargecoupled device (CCD), etc. MOSFET transistor: switch, current amplifier, dynamic random access memory (DRAMvolatile),
More informationLecture 16  The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 161 Lecture 16  The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. IV characteristics (cont.) 2. Smallsignal
More informationLecture 7  Carrier Drift and Diffusion (cont.) February 20, Nonuniformly doped semiconductor in thermal equilibrium
6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 71 Lecture 7  Carrier Drift and Diffusion (cont.) February 20, 2007 Contents: 1. Nonuniformly doped semiconductor in thermal equilibrium
More informationLecture 3: CMOS Transistor Theory
Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos IV Characteristics pmos IV Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors
More informationChoice of V t and Gate Doping Type
Choice of V t and Gate Doping Type To make circuit design easier, it is routine to set V t at a small positive value, e.g., 0.4 V, so that, at V g = 0, the transistor does not have an inversion layer and
More informationESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems
ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationClass 05: Device Physics II
Topics: 1. Introduction 2. NFET Model and Cross Section with Parasitics 3. NFET as a Capacitor 4. Capacitance vs. Voltage Curves 5. NFET as a Capacitor  Band Diagrams at V=0 6. NFET as a Capacitor  Accumulation
More informationCapacitors and PN Junctions. Lecture 8: Prof. Niknejad. Department of EECS University of California, Berkeley. EECS 105 Fall 2003, Lecture 8
CS 15 Fall 23, Lecture 8 Lecture 8: Capacitor ad PN Juctio Prof. Nikejad Lecture Outlie Review of lectrotatic IC MIM Capacitor NoLiear Capacitor PN Juctio Thermal quilibrium lectrotatic Review 1 lectric
More informationExtensive reading materials on reserve, including
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More informationCMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor
CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1
More informationIntegrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 10 MOSFET part 1 guntzel@inf.ufsc.br ualwell TrenchIsolated
More information