Diode_CMC model. Klaus-Willi Pieper, Infineon Technologies AG 2015, Nov 6 th
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1 Diode_CMC model Klaus-Willi Pieper, Infineon Technologies AG 2015, Nov 6 th
2 Agenda Introduction Features of diode models Application of JUNCAP2 and Diode_CMC Scaling of JUNCAP2 and Diode_CMC High injection in Diode_CMC v2.0.0 Reverse Recovery Effect in Diode_CMC v2.0.0 Calculation of charge storage NQS modeling New model parameters in Diode_CMC v2.0.0 Measurement and simulation of reverse recovery effect Comparison of characteristics Diode_CMC v1.0.0 and v2.0.0 Documentation and Si2 web page What s next? 2
3 Introduction There are different diode models implemented in the simulators (ordered from low to high complexity). Berkeley-SPICE Diode 1975, University of Berkeley, often implemented as diode level 1 with additional enhancements Fowler-Nordheim Diode (often implemented as diode level 2) Juncap2 model 2009, A.J. Scholten, M. Durand, G.D.J. Smit, and D.B.M. Klaassen, all NXP, also included in the MOSFET model PSP Diode_CMC model v1.0.0 Several companies contributed, standard of Compact Modeling Coalition (CMC) in 2010 Diode_CMC model v2.0.0 Implementation by Hiroshima University, addition of high injection and reverse recovery modelling concepts from HiSIM- Diode model, production release in Sept 2015 (veriloga model) 3
4 Features of diode models Features of Berkeley-SPICE model Forward characteristics, reverse leakage current, temperature dependent saturation current, series resistance, diffusion capacitance, nonlinear depletion capacitance, charge storage with transit time parameter, reverse breakdown, flicker noise Additional features of Juncap2 model Geometrical scaling: bottom, STI-edge, and gate-edge components Shockley-Read-Hall generation/recombination current, both in forward and reverse mode of operation Trap-assisted tunneling current, both in forward and reverse mode of operation Band-to-band tunneling current Avalanche and breakdown Shot noise 4
5 Features of diode models Additional features of Diode_CMC v1.0.0 Series resistors that scale with bottom well area, gate edge and STI edge perimeters plus non-scaling part Temperature dependence of series resistor RS Junction flicker noise, shot noise and resistor thermal noise Temperature dependence of saturation current as a function of XTI (PT) Non-ideality factor NFACTOR for ideal current component Temperature dependence of reverse breakdown voltage 5
6 Diode models Additional features of Diode_CMC v2.0.0 High injection mode for forward diode current Reverse recovery effect (scaling with bottom area only) Compatible to Diode_CMC v1.0.0, if v1.0.0 parameters are used only Original published literature: J. Nakashima, M. Miyake, and M. Miura-Mattausch, "Dynamic-Carrier-Distribution-Based Compact Modeling of p-i-n Diode Reverse Recovery Effects," Jpn. J. Appl. Phys., 51, 02BP06, pp. 1-4, M. Miyake, J. Nakashima, and M. Miura-Mattausch, "Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions," IEICE Trans. Electron., E95-C, pp ,
7 Application of JUNCAP2 and Diode_CMC Application of Diode_CMC v2.0.0 model Figure taken from documentation of Hiroshima University 7
8 Juncap2, Diode_CMC v1.0.0 and v2.0.0 Scaling Suitable for drainbulk/source-bulk junctions as well as for standalone diodes Scaling parameters Bottom area AB Length of gate edge LG Length of STI-edge LS Figures taken from documentation of Juncap2 version 200.3, 4/2009 8
9 Diode_CMC v2.0.0 High injection region New implementation of high injection region blue line: v1.0.0 with serial resistance=326 Ohm red line: v2.0.0 with high injection parameters and serial resistance=1.5 Ohm (correct value) red symbols: measurement 9
10 Juncap2, Diode_CMC v1.0.0 and v2.0.0 Scaling for ideal diode current I D VAK AB IDSATBOT exp NFABOT VAK LS IDSATSTI exp NFASTI TD VAK LG IDSATGAT exp NFAGAT TD 1 TD 1 1 scaling with Diode_CMC/Juncap2 parameters saturation current ideal emission coefficents additional Diode_CMC v2.0.0 parameters doping concentration upper limit for emission coefficient slope of smoothing function bottom area AB IDSATBOT NFABOT (default=1) NDIBOT NJH (default=2) NJDV STI length LS IDSATSTI NFASTI (default=1) NDISTI NJH (default=2) NJDV gate length LG IDSATGAT NFAGAT (default=1) NDIGAT NJH (default=2) NJDV 10
11 High injection region Diode_CMC v2.0.0 High injection model can be activated individually for the three scaling parts of DC current (bottom area, STI length and gate length) with a new parameter NJH if NJH > NFABOT high injection is activated for area scaling if NJH > NFASTI high injection is activated for STI length scaling if NJH > NFAGAT high injection is activated for gate length scaling if NJH<=NFABOT and NJH<=NFASTI and NJH<=NFAGAT (default), high injection is de-activated, model equations and scaling are the same as Diode_CMC model v
12 High injection region Diode_CMC v2.0.0 Emission coefficient is increasing with voltage V AK from NFA to NJH, if NJH<=NFA, then NJ=const=NFA 2,2 2 NJH 1,8 1,6 1,4 slope=njdv NJ 1,2 NFA 1 0,8 0 0,5 1 1,5 2 2,5 3 V AK V HA High-injection threshold voltage V NFA ln HA TD Same equations for BOT, STI and GAT scalings. p n NDI 0( temp) 12
13 High injection region Diode_CMC v2.0.0 Diode_CMC v1.0.0 M ID Diode_CMC v2.0.0 VAK exp( ) NFATD V VMAX VMAX AK (1 )exp( NFATD NFA DC current TD ) if if V V AK AK VMAX VMAX VAK ( nj( VAK ) NFA) exp vha nj V NFA NJH AK TD ( ) M ID VAK VMAX VMAX ( nj( VMAX ) NFA) dvmax vha 1 exp TD nj VMAX TD NFA NJH ( ) dnj dnj nj( VMAX ) VMAX dv VMAX dv VMAX with dvmax vha 2 nj( VMAX ) NFA NJH I D M ID 1 IDSAT if if V V AK AK VMAX VMAX For NJH<=NFA: nj(v AK )=NFA (same equations in both versions) 13
14 High injection region Diode_CMC v2.0.0 High injection region for different temperatures log y-axis Temp=-40, 25, 100, 150, 200 C symbols: measured lines: simulated linear y-axis 14
15 Reverse Recovery Effect in Diode_CMC v2.0.0 Calculation of charge storage I I j dq dt j Ij: junction current Diode_CMC v1.0.0 or v2.0.0 with CORECOVERY=0 Q j Q junction TT I j Diode_CMC v2.0.0 with CORECOVERY=1 Q j Q junction Q RR 15
16 Log(carrier density) anode Depl region cathode Log(carrier density) anode Depl region cathode Reverse Recovery Effect in Diode_CMC v2.0.0 Calculation of charge storage Charge calculation Qrr Forward operation q pexa slope~1/l a q pexk Holes from anode Electrons from cathode Doped carriers (q n0 ) Diffusion Length L a HL D a During reverse recovery process 0 W depa q pexa Distance in carrier storage region WI q pexk with HL T TAU T KD KR TAUT Holes from anode Doped carriers (q n0 ) Electrons from cathode 0 W depa Distance in carrier storage region WI 16
17 Reverse Recovery Effect in Diode_CMC v2.0.0 Calculation of charge storage Injected charge carrier densities (anode and cathode) q pexa AB q p n 2 T 0, bot M ID, bot INJ1exp INJ 2 VAK VHA exp INJT ln T KR KD p n0, bot q pexk AB q p n 2 T 0, bot exxpk INJ1exp INJ 2 VAK VHK exp INJT ln T KR KD p n0, bot V HA, V HK : threshold voltages for high injection (anode and cathode) T KR : reference temperature T KD : device temperature p n0 : minority carrier density at thermal equilibrium 17
18 charge density Reverse Recovery Effect in Diode_CMC v2.0.0 NQS modeling Delay in charge density q pexa / q pexk and width of depletion region W depa q qs q nqs RC=NQS or DEPNQS q pexa NQS q pexa_ nqs NQS dq pexa_ nqs dt q qs q nqs same for q pexk and W depa NQS t q pexa ->q pexa_nqs, q pexk ->q pexk_nqs, W depa ->W depa_nqs 18
19 Reverse Recovery Effect in Diode_CMC v2.0.0 Calculation of charge storage Total charge Q rr Q nexa, nqs WI q pexa nqs, exp W depa, nqs x L a dx Q nexk, nqs WI q pexk nqs, exp W depa, nqs WI L a x dx Q n q 0 AB NDIBOT WI L A : diffusion length Q rr Q Q Q nexa, nqs nexk, nqs n0 19
20 New model parameters in Diode_CMC v2.0.0 Reverse recovery effect is activated by a new parameter CORECOVERY=1 scaling is with bottom area only Parameters influencing reverse recovery effect NFABOT, NJH, NJDV, NDIBOT (high injection parameters, can be extracted at DC) INJ1, INJ2, TAU (carrier densities and life time) WI (length of drift region) NQS (carrier delay time) DEPNQS (depletion delay time) TAUT (temperature coefficient of carrier life time) INJT (temperature coefficient of carrier density) To be extracted at reverse recovery current at room temperature 20
21 Measurement and simulation of reverse recovery effect Idio Vdio0 The transmission line models the effect of an 75 cm long cable. 21
22 Measurement and simulation of reverse recovery effect reverse recovery effect Forward current IF=100mA symbols: measurements lines: simulations Simulation and measurement circuit cable transmission V REV =-5.16V V REV =-8.94V V REV =-16.40V V REV =-24.05V V REV =-31.63V Forward TLP switched to operation reverse operation 22
23 Comparison of characteristics Diode_CMC v1.0.0 and v2.0.0 CORECOVERY = 0 CORECOVERY = 1 23
24 Comparison of characteristics Diode_CMC v1.0.0 and v2.0.0 CORECOVERY = 0 CORECOVERY= 1 24
25 Documentation and Si2 web page The model documentation of Diode_CMC v2.0.0 consists of two documents Juncap2 document (April 2009, NXP) Diode_CMC document (Sept 2 nd 2015, HU) 25
26 Documentation and Si2 web page 26
27 Documentation and Si2 web page Equations implemented in 2009 can be found in appendix of Diode_CMC document. 27
28 Documentation and Si2 web page Diode_CMC model code and documentation are publically available and can be found on the public part of Si2-CMC page at CMC Open Standards 28
29 What s next? (ideas for the future) I B What happens, if we have a 3 terminal structure (n-p-n or p-n-p)? Influence of the third layer? Where does the stored charge flow? Forward Recovery Effect P N - P ( 1)I B I B 29
30 Acknowledgments Masataka Miyake (Model developer at HISIM Research Center, Hiroshima University) Mitiko Miura-Mattausch (Prof. at HISIM Research Center, Hiroshima University) 30
31
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