PN Junction Diode. Diode Cases. Semiconductor Elements. 2009, EE141Associate Professor PhD. T.Vasileva
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1 PN Junction Diode Semiconductor Elements 1 Diode Cases 2 1
2 Basic Diode Feature The essential feature of a diode is at e magnitude of e current greatly depends on e polarity of applied voltage. Basicaly e diode conducts current in only one direction. t is applied in rectifiers for converting an alternating current into a dirrect current. 3 PN Junction Diode Structure An ideal diode can only conduct current in one direction. Diode specific electrical properties depends on it s structure. 4 2
3 Junction Diode Schematic Symbol A diode is a nonlinear semiconductor device wi two electrodes: an anode and a caode. An arrow points from e anode to e caode to remind at e current will only flow easily in is direction. 5 Diode's Mode of Operation A diode's mode of operation depends on e various conditions possible at e pn junction. They are caused by e polarity of e applied voltage. 6 3
4 Unibiased Diode Equal number of plus and minus charges Electrically neutral as a whole 7 PN Junction Formation Majority carriers free electrons and holes, diffuse (spread) across e junction because difference in concentration in bo side of e crystal. Unlike e free carriers, e ions will never move. They remains fixed due to eir covalent bonds in e crystal structure. 8 4
5 Depletion Layer almost completely depleted of mobile charge carriers When an electron leaves e n side, it will leave behind an uncompensated positive ion. A positive space charge is created to e right of e junction in e n-region. Similarly a negative space charge will be created to e left of e junction in e p-region. 9 Barrier Potential & Electric Field Diffusion current D D Majority carriers Drift current E E Minority carriers The uncompensated positively- and negatively-charged ions at are wiin e depletion layer generate an electric field E o e barrier potential U o. At room temperature (25 o C) e barrier potential has for Si diodes a voltage of approximately 0.7V and for Ge diodes a voltage of about 0.3V. 10 5
6 Forward Bias The barrier potential will reduce to U o - U s and e electric field to E < E o. A forward current is always composed of majority carriers whose energies are sufficient to overcome e barrier potential. Current will easily flow in forward-biased diode. 11 everse Bias The barrier potential will increase to U o + U s and e electric field to E > E o. The diffusion of majority carriers across e junction has been greatly diminished. A very small reverse current, composed of ermally produced minority carriers still cross e junction. This makes e reverse current independent from e direction of e voltage polarity and of e barrier potential. 12 6
7 This image cannot currently be displayed. VA Characteristic A diode is a nonlinear device. t conducts in only one direction. An ideal diode functions like a switch open and closed. n forward-biased diode, e current increases very rapidly wi U. The reverse current is very small. 13 deal Diode Equation U = T ϕ s ( e 1) s = SJ s s - Saturation current J s - Current density S - Junction area ϕ T - Thermal potential kt ϕ T = q ϕ T = T (K) ϕ T = V for T = 25 o C U = ϕ ln + 1 T S 14 7
8 deal Diode Equation = s e U ϕ T = s 15 Saturation Current = f ( W, T, S) s A Si diode has a much smaller s an a Ge diode. There are fewer minority carriers in Si diodes an in Ge diodes. s doubles wi every 10 o C increase. Because e reverse current is caused by ermally created minority carriers, it will also be highly sensitive to temperature changes. 16 8
9 VA Characteristics of Si and Ge Diode 17 eal Diode Forward egion ecombination current, base ohmic resistance r B, r B = f () are considered. U PN U B r B = S e U r B mϕt ( ) U = U PN + r B p r E d r B n F U PN.r B Омичен участък _ Е + U B U + _ U F 18 9
10 eal Diode everse egion Generation current, leakage current and breakdown are considered. = S G ут B G U U U, V ут S Si ~ G G >> S G Ge ~ S Breakdown region S >> G, na Si diode = S + ут ( G >> S ), Ge diode = G + ут ( S >> G ) 19 Forward Voltage and Temperature du U TKU F = = const dt T TKU F - 2 mv/ o C 20 10
11 Diode atings Max junction temperature T jmax < T i, where n=p=n i Max power P jmax P = U Power dissipated in diode Tj Ta U = Tj Ta P = Power conducted into e ambient surroundings P max T i = max T a 1 P max = Ta + 1 T j max 21 Max Power & Max Current 1 P max = Ta + 1 T j max U F F max = P max T = j max T a Tj max P jmax, W Fmax, A T a, o C 25 o C T jmax 22 11
12 Current-Limiting esistor E U F = < F max The current-limiting resistor has e function to keep e diode current smaller an e maximum rating. 23 Heat emoval indicates efficiency in removing heat from e transistor in units o K/W. = + jc ca >> ca jc The less ermal resistance e higher power rating. Thermal energy can be easily reduced rough conduction and radiation from e device's case. = + + jc ch ha Heat sink 24 12
13 everse Breakdown At a reverse breakdown voltage U B, e current will rapidly increase wi only small changes in e voltage. Thermal breakdown Electrical breakdown Avalanche breakdown U B Zener breakdown 25 Avalanche Breakdown M = B 1 = U 1 U B n Minority carriers can be accelerated by e field and generate anoer two electron- hole pairs on collisions wi crystal atoms. The process may continue, causing e increase of e current. U B >7V Avalanche breakdown occurs in wide depletion layers wi a reverse bias higher an 7V
14 Zener Breakdown When an electric field of e barrier potential is large enough to break e covalent bonds additional free electrons and holes are created. Such effect is called Zener effect or Zener breakdown. This requires high electric fields on e order of V/cm. Zener breakdown occurs in very narrow depletion layers wi a reverse bias less an 5V. 27 Thermal Breakdown This breakdown occurs if U Tj Ta > U,V U B1 U B2 U,V Avalanche Thermal Surface r < 0 Zener T 2 > T 1 T 1 T 2, ma, ma 28 14
15 Load Line and Operating Point E E Q U Q = Q Q E E 2 E 1 F E = U + E 2 > E 1 E 1 E 2 1 F 2 > 1 = 1 U + E U F U F E 1 Е 2 E 29 Equivalent Circuits 30 15
16 Diode Testing 31 Examples + 10 k ma =? U вх = 10 V 100 V _ Si фиг k K 1 K 2 V=? 10V _ Si ШД V фиг
17 Work wi ac Signal Dynamic resistance U F u(t) r = U E + _ U F E-U m U E+U m r = du d ϕt = + s 33 Graphical calculation of r B F r r = U U U F F Values of dynamic parameters are valid in operation point only. W hen e position of operating point changes e value of e dynamic parameter also changes. The value of forward dynamic resistor is very small (less an 100 ohms), but in reverse direction is very large (around Mohms) 34 17
18 Examples 10 k 10V U вх U вх (t) Si U (t) изх t 1V + _ -10V фиг. 1 U изх t 35 18
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