NEW VERSION OF LETI-UTSOI2 FEATURING FURTHER IMPROVED PREDICTABILITY, AND A NEW STRESS MODEL FOR FDSOI TECHNOLOGY
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1 NEW VERSION OF LETI-UTSOI2 FEATURING FURTHER IMPROVED PREDICTABILITY, AND A NEW STRESS MODEL FOR FDSOI TECHNOLOGY T. Poiroux, P. Scheer*, O. Rozeau, B. de Salvo, A. Juge*, J. C. Barbé, M. Vinet CEA-Leti, Minatec Campus, 17 rue des Martyrs, Grenoble *ST Microelectronics, 850 rue Jean Monnet, Crolles
2 Outline Leti-UTSOI2.1: new version of Leti compact model for FDSOI technologies Status of Leti-UTSOI2 Improvements implemented on the new version Predictability of 2D-electrostatic model Weak/moderate inversion regime description Gate current model Narrow channel effects Summary 2
3 Status of Leti-UTSOI2 Leti-UTSOI2 is the first compact model able to describe FDSOI transistor behavior in all bias configurations, including strong forward back bias Presented in T. Poirouxet al, IEDM 2013 and T. Poirouxet al, MOS-AK dec 2013 Leti-UTSOI2 is currently used in industrial PDKs from ST Microelectronics End of 2014, a new version of the model, Leti-UTSOI2.1, has been implemented in all major SPICE simulation tools Strong inversion at back interface Strong inversion at both interfaces Strong inversion at front interface 3
4 Status of Leti-UTSOI2 Model structure Leti-UTSOI2 is a surface potential model featuring local / global scale levels, as PSP and Leti-UTSOI1 4
5 Leti-UTSOI2 improvements Predictability of 2D electrostatics 2D electrostatics in Leti-UTSOI2 is based on equivalent 1D model accounting for 2D couplings Effective geometry and biases allowing 2D interface potentials calculation with 1D model 5
6 Leti-UTSOI2 improvements Predictability of 2D electrostatics Link with process parameters at front gate (Leti-UTSOI2.1) Δ 2, 2 Δ 1,, 1,, Subthreshold swing degradation factor: local parameter PSCE 2!" # $ %&& # '() *+ '( $ %&&, 2 - #. /00, with - # '( (same as K.K. Young, IEEE TED, 1989) 6
7 Leti-UTSOI2 improvements Predictability of 2D electrostatics Link with process parameters at front gate (Leti-UTSOI2.1) Δ 2, 2 Δ 1,, 1,, DIBL factor: local parameter CF #. /00 5, 7
8 Leti-UTSOI2 improvements Predictability of 2D electrostatics Link with process parameters at back gate (Leti-UTSOI2.1) 6 Δ 7 2, Δ 7 1,6, ,6,6 7 Sub. swing degradation factor: asymmetry local parameter PSCEB 89 7:;< = >'( '( with =!,?@) A,?@!,B@ ) A,B@ = =C not scalable 8
9 Leti-UTSOI2 improvements Predictability of 2D electrostatics Link with process parameters at back gate (Leti-UTSOI2.1) 6 Δ 7 2, Δ 7 1,6, ,6,6 7 DIBL factor: asymmetry local parameter CFB D 7:;< 5 5= >'( '( with 5= A,?@ A,B@ 5= 5=C not scalable 9
10 Predictability of 2D electrostatics: sub. swing Comparison to TCAD simulations (lines: model, dots: TCAD) Parameters PSCEL, PSCELEXP, PSCEBO set on «Vbeffect» curve Leti-UTSOI2 improvements V b effect t Si effect t box effect t ox effect 10
11 Predictability of 2D electrostatics: DIBL Comparison to TCAD simulations (lines: model, dots: TCAD) Parameters CFL, CFLEXP, CFBO set on «Vbeffect» curve Leti-UTSOI2 improvements V b effect t Si effect t box effect* t ox effect * For large t box variations, slight dependence of CFBOwitht box is requiredto capture properly fringing fields effect 11
12 Leti-UTSOI2 improvements No additional parameters Predictability of 2D electrostatics: linear V th Comparison to TCAD simulations (lines: model, dots: TCAD) V b effect t Si effect t box effect t ox effect 12
13 Leti-UTSOI2 improvements No additional parameters Predictability of 2D electrostatics: sat. V th Comparison to TCAD simulations (lines: model, dots: TCAD) V b effect t Si effect * including slight dependence of CFBOwitht box t box effect* t ox effect 13
14 Leti-UTSOI2 improvements Accuracy in weak/moderate inversion regime Depletion of source/drain LDD tails depends on front/back bias Electrical channel length is not constant in subthreshold regime Subthreshold slopeisnon uniform=> Gm/Id isvaryingvs Vgand Vb Results from TCAD simulations 14
15 Leti-UTSOI2 improvements Accuracy in weak/moderate inversion regime Leti-UTSOI2 has been improved to capture this effect Comparison to hardware data Without L eff dependence (Leti-UTSOI2.0) Gm/Id vs Vg at various Vb Gm/Id vs Vg at various temp. With L eff dependence (Leti-UTSOI2.1) Gm/Id vs Vg at various Vb Gm/Id vs Vg at various temp. 15
16 Leti-UTSOI2 improvements Accuracy of gate current model Model completed to account for a TAT-like component of gate to channel current with a single new parameter NIGINV Leti-UTSOI2.0 Leti-UTSOI2.1 Ig(Vg) for various temperatures Ig(Vg) for various temperatures Improved description in the subthreshold regime 16
17 Leti-UTSOI2 improvements Refined description of narrow channel effect Leti-UTSOI2.1 accounts for possible evolution of body factor with channel width through PNCE parameter Slight effect accurately captured Gate BOX 73mV Narrow STI Ground plane STI Wide 77mV Well 17
18 Leti-UTSOI2 improvements Other model improvements Device thermal node is now accessible (optional 5 th node) Possibility to connect external thermal RC network at circuit level Mobility scaling law has been modified for more accuracy PSP-like scaling law adopted Modified VFB scaling law Easier extraction of narrow channel effects 18
19 Leti-UTSOI2 improvements Summary Improved version of Leti-UTSOI2 is available Main improvements concerns: Predictability of 2D electrostatic model over process parameters Accuracy of weak/moderate inversion regime description Accuracy of gate current modeling Refined description of narrow channel effects In addition, device thermal node is now available as an optional 5 th node References about Leti-UTSOI2 T. Poirouxet al., UTSOI2: A Complete Physical Compact Model for UTBB and Independent Double Gate MOSFETs, IEDM 2013 T. Poirouxet al., UTSOI2: A compact model for UTBB devices accounting for back interface inversion, MOS-AK, dec
20 New stress model New stress model for FDSOI technologies Motivations Analytical model presentation Validation with respect to silicon data Summary 20
21 New stress model Motivations Performance of next generation technologies increasingly rely on strain engineering Efficient usage of strained materials demonstrated in UTBB FDSOI 14nm [1] Supported by 3D mechanical simulations, quantum simulations and analytical model [2] For CAD offer, interest in using and adapting well-known SA/SB approach developed for STI stress [3] to capture geometry dependence of new stress effects [1] O. Weber et al., VSLI 2014 [2] B. De Salvo et al., IEDM 2014 [3] R.A. Bianchi et al., IEDM
22 New stress model Case study: strain induced by SiGe channel Courtesy from [1] Ge induces compressive strain in SOI film Strain tends to relax at the edges of the film [1] B. De Salvo et al., IEDM
23 New stress model Model assumptions Electrical parameters impacted by strain present an evolution along active area similar to that of longitudinal stress, captured by a relaxation factor g(x,l act ) L act Impacted parameters are: Low field mobility ( Iodlin, i.e. Ilin at Vgs-Vth=0.5V) «Flat-band» voltage ( Vtlin) DIBL (Vtsat) Saturation velocity ( Isat, Ieff) x 23
24 New stress model Model formulation using x and L act Evolution of electrical parameter P 8 E,. :; 8 0FGG 4 I:2J Δ8 K E,. :; Δ8 8 /3T/ 8 0FGG 4 I:2J can be a function of W, L 2 K E,. :; 1 1 L M N MO 1 L M$ PQ N MO - and S are model parameters R O 24
25 New stress model Model formulation using SA and SB Parameter value is taken at the center of the channel: K 9U,9V 1 When SA=SB, relaxation factor reduces to: This allows a simple parameter extraction -(and Δ8) extraction on SA scaling with SA=SB S extraction on SA or SB scaling with SA SB 2 1 L M W)$ # N MO 1 L M 6)$ # N MO K 9U,9V 9U L M W)$ # N R O 25
26 New stress model Electrical parameter expressions with respect to SA ref /SB ref reference value Ratio-like expression (e.g. mobility, saturation velocity) 1 Δ8 8 0FGG 4 I:2J K 9U,9V 8 9U,9V 8 9U I/0,9V I/0 1 Δ8 8 0FGG 4 I:2J K 9U I/0,9V I/0 Amplitude parameter is Δ8 8 0FGG 4 I:2J Delta-like expression (e.g. Vth, DIBL) 8 9U,9V 8 9U I/0,9V I/0 Δ8 K 9U,9V K 9U I/0,9V I/0 Amplitude parameter is Δ8 26
27 New stress model Model formulation for multi-finger devices (useful for pre-layout simulations) L SA SD SB In previous model equations, relaxation factor, K 9U,9V is replaced by KX 9U,9V KX 9U,9V 1 YD ]MR Z K 9U [ 9\.,9V YD 1 [ 9\. 2^_ 27
28 New stress model Experimental validation: Vtlin 28
29 New stress model Experimental validation: Vtsat 29
30 New stress model Experimental validation: Vgs-Vth=0.5V 30
31 New stress model Summary Stress model used in SPICE has to be updated to handle new strain engineering strategies of advanced technologies A new semi-empirical model is proposed, which is compatible with SA/SB formalism of initial stress model Model accuracy is validated against 14nm UTBB FDSOI silicon data This model will be implemented in Leti-UTSOI2 compact model, besides existing STI stress model (stress model selector will be added too) 31
32 New stress model References R.A. Bianchi et al., "Accurate Modeling of Trench Isolation Induced Mechanical Stress Effect on MOSFET Electrical Performance, IEDM 2002 O. Weber et al., 14-nm FDSOI Platform Technology for High-Speed and Energy-Efficient Applications, VLSI Technology Symposium 2014 B. De Salvo et al., A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies, IEDM
33 Thankyoufor yourattention
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