QUAD OPERATIONAL AMPLIFIER (functional analogue LM324 f. «Motorola»)
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1 IL4S QUAD OPEATIONAL AMPLIFIE (functional analogue LM4 f. «Motorola») Microcircuit IL4S consists of four autonomous operational amplifiers with high gain ratio and internal frequency compensation. Operational amplifiers are operating in the extensive voltage range. Low consumption power allows using IL4S in the systems with battery supply. Internal frequency compensation High gain ratio by voltage Single pole or bipolar supply Level of input signal from 0 V to U Broad range of output voltage from 0 V to U,5 v Application in systems with battery supply. Low input offset voltage Differential input voltage corresponding to supply voltage 4 4 Index N DIP package Index D SO package D ИНДЕКС SOI IL4SN 4pin plastic DIP package MS00AA IL4SD 4pin plastic So package MS0AB Figure Microcircuit designation OUT 0 4 OUT 4 IN B 0 IN B4 IN A 0 IN A4 U 04 U EE IN A 05 0 IN A IN B IN B OUT OUT Figure Designation of pins IL4S_E_v
2 IL4S Table Description of microcircuit pins package and chip contact pads hip contact Pin pad number number Pin description Symbol 0 0 Pin OUT 0 0 Input inverted В IN B 0 0 Input noninverted А IN А Supply pin from positive voltage source Ucc Input noninverted А IN А Input inverted В IN B Output OUT Output OUT Input inverted В IN B 0 0 Input noninverted А IN А Supply pin from negative voltage source U EE Input noninverted А4 IN А4 Input inverted В4 IN B Output 4 OUT 4 Table Absolute maximum ratings Parameters of condition, unit Symbol Norm min max Unit Supply voltage unipolar U,0 bipolar U, U EE ±6,0 V ange of commonmode input voltages U I 0,,0 V ange of input voltage of differential signal U ID ±,0 V Storage temperature Tstg 60 5 С Maximum chip temperature Tj 50 С Duration of short circuit output current impact ts 00 ms Table ecommended operating ratings Parameters of condition, unit Symbol Norm min max Unit Supply voltage unipolar U 5,0 0,0 bipolar U, U EE ±,5 ±5,0 V ange of commonmode input voltages U I 0 8 V ange of input voltage of differential signal U ID U V Maximum xhip temperature Tj 50 С IL4S_E_v
3 IL4S Table 4 Microcircuit electrical parameters (при U = (5 0) V, U EE = 0 V, if otherwise is not specified vbelow) Letter symbol of parameter U IO Parameter, unit Zero offset voltage Norm Measurement condition min max Uo=,4 V, S =0 Ohm, U I =0 (Ucc,5v) V =,4 V, S =0 Оhm, U I =0 (Ucc,0V) V I IO Input current difference =,4 V I IB Input offset current =,4 V U I U ID A U K M K SV H L ange of commonmode input voltages ange of input differential signal Gain ratio without feedback in high signal mode Damping factor of commonmode input voltages Influence coefficient of supply nonstability on zero offset voltage High level output voltage Low level output voltage Ucc = 0 V Amb. temp., ±7,0 5±0 ±9,0 ±50 ± ±0 5±0 0 8,5 5±0 0 8,0 Unit mv Ucc 5±0 V L =,0 kohm, Ucc = 5 V I O Output drain current U ID =,0 B, Ucc=5 V 5 5 5±0 na na v V/mV S 0 kohm, 65 5±0 db 65 5±0 db Ucc=5,0 V, L = kohm, 5±0 Ucc=0 B, L = kohm 6,0 5±0 Ucc=0 B, L =0 kohm 7,0 5± Ucc=5,0 V, 0 L =0 kohm U ID =,0 V, Ucc=5 V, Uo=5 V ,0 5±0 5±0 ma I O Output source current U ID =,0 V, = 5 V = 0, V 5±0 ua I OS Short circuit current Ucc=5,0 v, = 0 V 60 5±0 mа I onsumption current Ucc=5 V, Uo=,5 V, L =, 5± Ucc=0 V, Uo=5 V, L =,0 ma Note Minus sign before the norm value for current indicates its direction only ( drain current). V mv ma IL4S_E_v
4 IL4S Figure Overall dimensions of DIPкорпуса MS00AA 4 IL4S_E_v
5 IL4S.75max 0.56max Figure4 Overall dimensions of SOкорпуса MS0AB 5 IL4S_E_v
6 IL4S hip thickness 0,5 ± 0,0 mm. Technological marking on chip: 4S. oordinates of technological marking, mm: left bottom corner х = 0,05, у =0,96. Figure 5 Microcircuit chip appearance Table 5 oordinates and sizes of microcircuit contact pads ontact pad number oordinates ( left bottom corner),mm Х У 0 0,89 0, ,85 0, ,58 0, ,455 0, , 0, ,0 0, ,086 0, ,086 0,7 09 0,0 0,0 0 0, 0,0 0,455 0,0 0,58 0,0 0,85 0,0 4 0,89 0,7 Notes oordinates and size of contact pads are shown by Passivation layer. Size of contact pads 0,085 х 0,085 mm Metal thickness and composition on planar side Al % Si,4 ± 0, um Metal thickness and composition on nonplanar side 6 IL4S_E_v
7 ecommended application circuits IL4S =/U СС /4IL4S Triangular pulse outputle f 75к f =, if 4 f = 00к 00к /4IL4S Square pulse output =/U 0к 5к 4 50к /4IL4S U f =, o π for f O= khz = 6 к С = 0,0 uf Figure 6 Frequency generator Figure 7 Signal generator on Winna bridge U U /4IL4S a b /4IL4S c c Figure 8 Differential amplifier with high resistance U o =с(ab)(ee) /4IL4S U in /4IL4S H L U inl UinL = ( U ) OL UinH = ( U ) OH H = ( U U ) OH OL Figure 9 omparator with hysteresis Hysteresis U inh С С Uin /4IL4 =/Ucc Figure0 Filter of the nd order С /4IL4 4 /4IL4 5 00к T BP frequency /4IL4 С 5 00к for f o = π = Q 4 = T BP 4 = T N = 0 f o = khz Q = 0 T BP = TN = = 60kOhm = 0,00µ F =,6МОhm =,6МОhm 4 =,6МОhm 7 IL4S_E_v
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