HAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS

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1 MICRONAS INTERMETALL HAL1...HAL, HAL Hall Effect Sensor ICs Edition May, DS MICRONAS

2 HAL1...HAL HAL Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at khz operates from. V to V supply voltage overvoltage and reverse-voltage protection extremely robust against mechanical stress short-circuit protected open-drain output operates with magnetic fields from DC to 1 khz on-chip temperature compensation circuitry minimizes shifts in on and off points and hysteresis over temperature and supply voltage the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hysteresis ideal sensor for ignition timing, anti-lock brake systems and revolution counting in extreme automotive and industrial environments EMC corresponding to DIN 9 Specifications The types differ according to the magnetic flux density values for the magnetic switching points, the temperature behavior of the magnetic switching points, and the mode of switching. HAL1 switching type: bipolar, very sensitive output turns low with magnetic south pole on branded side of package output state can change if magnetic field is removed HAL, HAL, HAL switching type: latch output turns low with magnetic south pole on branded side of package output state does not change if magnetic field is removed HAL, HAL, HAL switching type: unipolar output turns low with magnetic south pole on branded side of package output turns high if magnetic field is removed MICRONAS INTERMETALL

3 HAL1...HAL, HAL Marking Code Type HAL1S, HAL1UA HALS, HALUA HALS, HALUA HALS, HALUA Temperature Range A E C 1A 1E 1C A E C A E C A E C Solderability Package SOT-9A: according to IEC-- Package TO-9UA: according to IEC-- 1 OUT GND Fig. 1: Pin configuration HAL S, HAL UA A E C HAL S, HAL UA HAL S, HAL UA A E C A E C Operating Junction Temperature Range 1 Reverse Voltage & Overvoltage Protection Hall Plate Temperature Dependent Bias Switch HALx HALxx Hysteresis Control Comparator Short Circuit & Overvoltage Protection Output OUT A: T J = C to +17 C E: T J = C to +1 C C: T J = C to +1 C GND Clock Designation of Hall Sensors Fig. : HALx block diagram HALXXXPP-T Temperature Range: A, E, or C Package: UA for TO-9UA, S for SOT-9A Type: 1..., Example: HAL1UA-E Type: 1 Package: TO-9UA Temperature Range: T J = C to +1 C MICRONAS INTERMETALL

4 HAL1...HAL, HAL Functional Description Outline Dimensions This Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines at right angles to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bounce ± branded side sensitive area position of hall sensor referenced to the center of package x = ±.1 mm y =. ±.1 mm (. mm x.1 mm) top view Magnetic offset caused by mechanical stress is compensated for by using the switching offset compensation technique. Therefore, an internal oscillator provides a two phase clock. The hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and momentary hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switch level to switching of output can vary between zero and 1/f osc. Shunt protection devices clamp voltage peaks at the Output-Pin and -Pin together with external series resistors. Reverse current is limited at the -Pin by an internal series resistor up to 1 V. No external reverse protection diode is needed at the -Pin for values ranging from V to 1 V. 1 max... Fig. : Plastic Small Outline Transistor Package (SOT-9A) Weight approximately. g Dimensions in mm sensitive area position of hall sensor.. referenced to the center of package 1. x = ±.1 mm y =. ±.1 mm +.1 (. mm x.1 mm) f osc B t min.. t V OUT V OH. V OL branded side I DD t. 1/f osc = 1 µs Fig. : Timing diagram t f t Fig. : Plastic Transistor Single Outline Package (TO-9UA) Weight approximately.1 g Dimensions in mm MICRONAS INTERMETALL

5 HAL1...HAL, HAL Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit Supply Voltage 1 1 1) V V P Test Voltage for Supply 1 ) V I DD Reverse Supply Current 1 1) ma I DDZ Supply Current through Protection Device 1 ) ) ma V OH Output High Voltage 1) V I O Continuous Output On Current ma I Omax Peak Output On Current ) ma I OZ Output Current through Protection Device ) ) ma T S Storage Temperature Range 1 C T J Junction Temperature Range 1 C 17 ) 1) as long as T J max is not exceeded ) with a Ω series resistance at pin 1 corresponding to test circuit 1 ) t< ms ) t<1h Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions/Characteristics of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol Parameter Pin No. Min. Typ. Max. Unit Supply Voltage 1. V I O Continuous Output On Current ma Extended Operational Range Within the extended operating range, the ICs operate as mentioned in the functional description. The functionality has been tested on samples, whereby the characteristics may lie outside the specified limits. Symbol Parameter Pin No. Min. Typ. Max. Unit Supply Voltage 1. V I O Continuous Output On Current ma MICRONAS INTERMETALL

6 HAL1...HAL, HAL Electrical Characteristics at T J = C to +17 C, =. V to V, as not otherwise specified Typical Characteristics for T J = C and = 1 V Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions I DD Supply Current 1... ma T J = C I DD Z Supply Current over Temperature Range Overvoltage Protection at Supply ma 1. V I DD = ma, T J = C, t = ms V OZ Overvoltage Protection at Output V I OH = ma, T J = C, t = ms V OL Output Voltage 1 1 mv I OL = ma, T J = C, =. V to V V OL Output Voltage over Temperature Range 1 mv I OL = ma I OH Output Leakage Current..1 µa B<, T J = C, V OH =. to V I OH f osc Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency 1 µa B<, T J 1 C, V OH =. to V. 7 khz T J = C, =. V to V f osc Internal Oscillator Chopper Frequency over Temperature Range. 79 khz =. V to V t en(o) Enable Time of Output after 1 7 µs = 1 V, B <, Setting of B > + t r Output Rise Time 7 ns = 1 V, RL = Ohm, C L = pf t f Output Fall Time ns = 1 V, RL = Ohm, C L = pf R thjsb case SOT-9A R thja case TO-9UA Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Soldering Point 1 K/W Fiberglass Substrate mm x 1 mm x 1.mm, pad size see Fig. 7 1 K/W MICRONAS INTERMETALL

7 HAL1...HAL, HAL Magnetic Characteristics at T J = C to +17 C, =. V to V, Typical Characteristics for = 1 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter C C 1 C 17 C Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. On point HAL1 HAL HAL HAL HAL HAL HAL Off point HAL1 HAL HAL HAL HAL HAL HAL Hysteresis B HYS HAL1 HAL HAL HAL HAL HAL HAL Magnetic Offset ( + )/ HAL1 HAL HAL HAL HAL HAL HAL Output Voltage.. min B HYS max 1. Fig. : Definition of magnetic switching points and hysteresis Fig. 7: Recommended pad size SOT-9A Dimensions in mm MICRONAS INTERMETALL 7

8 HAL1...HAL, HAL Note: In the following diagrams versus ambient temperature on pages and 9, the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. versus temperature HAL1 max typ max min min typ =. V =. V... V 1 1 C T A, T J versus temperature versus temperature max min =. V =. V... V max min HAL 1 1 C T A, T J typ typ max min =. V =. V... V max min HAL C T A, T J typ typ MICRONAS INTERMETALL

9 HAL1...HAL, HAL versus temperature versus temperature max min max min =. V =. V... V HAL 1 1 C T A, T J typ typ max min =. V =. V... V max HAL min 1 1 C T A, T J typ typ versus temperature versus temperature HAL HAL 7 max max max max min typ typ 1 1 typ typ min min 1 min =. V =. V... V =. V =. V... V 1 1 C T A, T J 1 1 C T A, T J MICRONAS INTERMETALL 9

10 HAL1...HAL, HAL Supply current Supply current ma HALx ma. HALx. I DD TA = C 1 T A = C 1 T A =17 C V I DD. T A = C. T A = C.. T A = 1 C T A = 17 C V Supply current versus ambient temperature Internal chopper frequency ma HALx khz 1 HALx 9 I DD f osc = V 7 T A = C = 1 V T A = C T A = 17 C =. V C 1 1 V T A 1 MICRONAS INTERMETALL

11 HAL1...HAL, HAL Internal chopper frequency Internal chopper frequency versus ambient temperature khz 1 HALx khz 1 HALx 9 9 f osc f osc 7 T A = C 7 =. V T A = C T A = 17 C =. V... V V 1 1 C T A Output low voltage Output low voltage mv HALx I O = ma mv HALx I O = ma V OL V OL T A = 17 C T A = 1 C T A = 17 C 1 1 T A = C T A = C 1 T A = 1 C T A = C T A = C 1 1 V 7 V MICRONAS INTERMETALL 11

12 HAL1...HAL, HAL Output low voltage versus ambient temperature Output high current versus output voltage mv HALx µa HALx 1 1 V OL =. V =. V = V I OH T A = 17 C T A = 1 C 1 1 T A = 1 C T A = C T A = C 1 1 C 1 1 V T A V OH Output leakage current versus ambient temperature µa HALx 1 I OH 1 1 V OH = V V OH =. V C T A 1 MICRONAS INTERMETALL

13 HAL1...HAL, HAL HAL1 HAL T A = C T A = C T A = C T A = 1 C T A = C T A = 1 C T A = 17 C 1 1 V T A = 17 C V HAL HAL T A = C T A = C T A = C T A = 1 C T A = C T A = 1 C T A = 17 C T A = 17 C 1 1 V V MICRONAS INTERMETALL 1

14 HAL1...HAL, HAL 1 HAL 1 HAL T A = C T A = C T A = C T A = 1 C T A = C T A = 1 C T A = 17 C T A = 17 C V V 1 HAL 1 HAL TA = C T A = C T A = C T A = C T A = 1 C T A = 17 C 1 1 V T A = 1 C T A = 17 C V 1 MICRONAS INTERMETALL

15 HAL1...HAL, HAL HAL HAL T A = C T A = C T A = C T A = 1 C T A = C T A = 1 C T A = 17 C T A = 17 C V V HAL HAL T A = C T A = C T A = C T A = C T A = 1 C T A = 1 C T A = 17 C T A = 17 C 1 1 V V MICRONAS INTERMETALL 1

16 HAL1...HAL, HAL HAL HAL T A = C 1 T A = C T A = C T A = C T A = 1 C T A = 17 C T A = 1 C T A = 17 C 1 1 V V Spectrum of supply current Spectrum at supply voltage I DD dbµa 1 HALx = 1 V T A = C Quasi-Peak- Measurement max. spurious signals dbµv 7 HALx V P = 1 V T A = C Quasi-Peak- Measurement test circuit max. spurious signals MHz f MHz f 1 MICRONAS INTERMETALL

17 HAL1...HAL, HAL Application Note For electromagnetic immunity, it is recommended to apply a.7 nf capacitor between (pin 1) and Ground (pin ). For automotive applications, a Ω series resistor to pin 1 is recommended. The series resistor and the capacitor should be placed as close as possible to the IC. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature T J ) is higher than the temperature outside the package (ambient temperature T A ). Test Circuits for Electromagnetic Compatibility Test pulses V EMC corresponding to DIN 9. V EMC V P R V Ω.7 nf 1 GND OUT R L 1. kω pf Fig. : Test circuit : test procedure for class A T J = T A + T At static conditions, the following equations are valid: for SOT-9A: T = I DD * * R thjsb for TO-9UA: T = I DD * * R thja For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I DD and R th, and the max. value for from the application. R V Ω 1 R L Ω V EMC OUT.7 nf GND Fig. 9: Test circuit 1: test procedure for class C MICRONAS INTERMETALL 17

18 HAL1...HAL, HAL Interferences conducted along supply lines in 1 V onboard systems Product standard: DIN 9 part 1 Pulse Level U s in V Test circuit Pulses/ Time Function Class Remarks 1 IV 1 1 C s pulse interval IV 1 1 C. s pulse interval a IV 1 1 h A b IV 1 1h A IV 7 A IV. 1 1 C 1 s pulse interval Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines Product standard: DIN 9 part Pulse Level U s in V Test circuit Pulses/ Time Function Class Remarks 1 IV A s pulse interval IV A. s pulse interval a IV 1 min A b IV 1 min A Radiated Disturbances Product standard: DIN 9 part Test Conditions Temperature: Room temperature (... C) Supply voltage: 1 V Lab Equipment: TEM cell MHz (VW standard) with adaptor board mm, device mm over ground Frequency range:... MHz; 1 MHz steps Test circuit with R L = 1. kω tested with static magnetic fields Tested Devices and Results Type Field Strength Modulation Result HAL x > V/m output voltage stable on the level high or low 1) HAL x > V/m 1 khz % output voltage stable on the level high or low 1) 1) low level <. V, high level > 9% of 1 MICRONAS INTERMETALL

19 HAL1...HAL, HAL MICRONAS INTERMETALL 19

20 HAL1...HAL, HAL Data Sheet History 1. Final data sheet: HAL1...HAL, HAL Hall Effect Sensor ICs, May, 1997, 1--1DS. First release of the final data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-791 Freiburg (Germany) P.O. Box D-79 Freiburg (Germany) Tel Fax Internet: Printed in Germany by Simon Druck GmbH & Co., Freiburg (/97) Order No. 1--1DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, MICRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. However, our prior consent must be obtained in all cases. MICRONAS INTERMETALL

21 End of Data Sheet Multimedia ICs MICRONAS Back to Summary Back to Data Sheets

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