Soft Breakdown in Ultra-Thin Gate Oxides
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1 Soft Breakdown in Ultra-Thin Gate Oxides Dipartimento di Elettronica e Informatica Università di Padova via Gradenigo 6a, Padova, Italy
2 Outline Introduction: radiation effects on thin oxide Radiation Induced Leakage Current (RILC) Radiation Soft Breakdown (RSB) Experimental and devices Main RSB characteristics: Random Telegraph Noise (RTN) in RSB current Quantum Point Contact model for RSB Impact of Radiation Damage on Lifetime Conclusions and New perspectives
3 Collaborations Work done in collaboration with: - ST Microelectronics, via Olivetti 2, Agrate Brianza, Italy - Laboratori Nazionali di Legnaro (LNL) INFN Many thanks to: M. Ceschia, A. Cester, L. Bandiera (DEI) J. Wyss, A. Candelori, A. Kaminsky, D. Pantano (LNL)
4 Introduction 1/2 Contemporary CMOS devices feature gate oxides with t ox < 3 nm After irradiation, thin gate oxides may show: Radiation Induced Leakage Current (RILC) (1) Radiation Soft Breakdown (RSB) (2) Single Event Gate Rupture (SEGR) (3) Observed 1 st time by M. Ceschia after irradiation at LNL Low LET (Linear Energy Transfer) ion irradiation can produce RILC in thin gate oxides (t ox < 7 nm) High LET heavy ion irradiation can produce RSB in thin gate oxides (t ox < 5 nm) (1) M. Ceschia, et al., IEEE Trans. Nucl. Sci. (45) (2) M. Ceschia et al., Proc. of MRS (592) 2000 (3) F.W. Sexton, et al., IEEE Trans. Nucl. Sci. (45) 1998.
5 Introduction 2/2 I g [A] Hard Breakdown Radiation Soft Breakdown 10 7 I ioni/cm 2 RILC is only slightly larger than the fresh current. Radiation Soft Breakdown appears with a large increase of the gate current (more than 1-2 order of magnitude) V g [V] RILC Si ioni/cm 2 Fresh When Hard Breakdown occurs the gate current increases by 3-4 orders of magnitude with respect to the fresh curve
6 RILC conduction mechanisms φ ( ((. W R[ RILC is associated to a trapassisted tunnelling through neutral defects generated by irradiation (1) Electron looses part of its energy during the tunnelling process (inelastic tunnel) Irradiation: γ rays, X-rays,8 MeV electrons, heavy ions with LET<10-20 MeV cm 2 /mg (LNL) (1) M. Ceschia, et al., IEEE Trans. Nucl. Sci. (45) 1998.
7 Radiation Soft Breakdown The Radiation Soft Breakdown current flows through region with high trap concentration produced by a single ion hit (1) Gate Electron Defects Oxide Substrate RILC Radiation Soft Breakdown Spot (1) M. Ceschia et al., Proc. of MRS (592) 2000
8 Devices and experimental Devices: square MOS capacitors with - area = 10-2 cm cm 2 -t ox = 2.6nm - 7nm Measurements: - Gate Current vs. Gate Voltage - Gate Current vs.time Radiation sources: Si, Ni, Br, Ag, I and Au ions (at Tandem accelerator, LNL INFN)
9 Random Telegraph Noise in RSB Current I g [na] Time [s] area = 10-2 cm 2 t ox = 4 nm Ion Fluence = I ions/cm 2 measured at Vg= -2.7V sampling frequency F S = 4 khz RSB Current shows large high low and low high transitions (RTN noise) A small noise is superimposed to each current level. A.Cester et al. IEEE-Trans. Nucl. Sci. (48) 2001
10 Quantum Point Contact for RSB Poly-Si Oxide Si trap in the oxide z d o d o =RSB path minimum transverse dimension y E We assume : E z y Electron transport in the oxide is ballistic Electron energy is quantized along path transverse direction
11 Quantum Point Contact analitic model QPC Energy Diagram Band E f βvg E φ Si poli-si oxide (1-β)Vg E f current across the QPC path: I QPC 2 2 e = h ( Vg) T( E) [ f( E E Vg) f( E E + ( 1 ) Vg) ] de Vg f f A. Cester, et al., IEEE-IEDM 2001
12 ,PSDFWRI5DGLDWLRQ'DPDJHRQ/LIHWLPH After irradiation: Constant Voltage Stress stress = -2V (Eox=2.3 MV/cm ) I g [na] t ox =2.8 nm Area = 10-3 cm 2 Fluence = 10 7 I ions/cm 2 E = 257 MeV Time [s] SB onset A single Soft Breakdown (SB) path is generated across the oxide after only 1800 s This SB path drives more current than the RSB leakage current path 4000 CVS@Vg stress = -2V on fresh devices No SB appears
13 ,PSDFWRI5DGLDWLRQ'DPDJHRQ/LIHWLPH I g [na] tox=2.8 nm Area = 10-3 cm 2 Fluence =10 7 I ions/cm 2 E = 257 MeV HB onset Time [s] 2 nd V gstress = -3.5 V: Hard Breakdown in only 360 s V gstress = -3.5 V may produce Breakdown in these oxides (but over very long time periods ) The radiation induced wear out must be taken into account in evaluating the actual impact of ionising radiation on device lifetime 400
14 Conclusions After irradiation, gate oxides with t ox < 3nm show RSB RSB is due to localised weak spots The RTN is a peculiar characteristic of the RSB RSB limits the life-time of devices A good model for RSB is the QPC New perspectives : Influence of irradiation on MOSFET parameters
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