Epitaxial SiC Schottky barriers for radiation and particle detection
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1 Epitaxial SiC Schottky barriers for radiation and particle detection M. Bruzzi, M. Bucciolini, R. D'Alessandro, S. Lagomarsino, S. Pini, S. Sciortino INFN Firenze - Università di Firenze F. Nava INFN Bologna Università di Modena
2 1. Introduction M. Bruzzi - 1st RD50 Workshop CERN 2-4 October, 2002 Outline 2. Epitaxial SiC Schottky Barriers 3. Radiation Facilities 3. Dosimetric Characterisation 4. Particle Detection α source β source ( mip ) 5. Radiation damage 6. Future applications 7. Conclusions
3 1. 1. Introduction Property Diamond 4H SiC Si Bandgap [ev] Breakdown Field [V/cm] Electron mobility [cm 2 /Vs] Hole mobility [cm 2 /Vs] Saturation velocity [cm/s] Effective atomic number Z eff 6 ~10 14 Dielectric constant ε r e-h creation energy [ev] minority carrier lifetime [s] Wigner Energy [ev] Low leakage current High radiation resistance (?) Signal higher than diamond
4 Energy required to create an e-h pair E = 1.76eV E g e-h pairs per 1µm: Si 89 SiC 51 Diamond 36
5 2. Epitaxial SiC Schottky Barriers Epitaxial 4H-SiC Wafer from CREE (USA) Epitaxial n thickness: µm, N: x10 15 cm -3 substrate n + thickness: µm, N: 6.8x10 18 cm -3 Schottky Contact n 4H-SiC, 30µm, epitaxial layer n + 4H-SiC, 360µm, substrate Buffer layer n + Ohmic Contact Cost : $ 2 in $ 2 in 2002
6 Ohmic Contact Ti/Au thin films Schottky Contact Au (1000Å) Ø 2mm produced by: C.Lanzieri, Alenia Systems, Roma, Italy Leakage Current Capacitance Current [pa] Voltage [V] 500
7 Detector Characterization Radiation Damage Radiotherapy Unit- University of Florence MeV electrons from linear accelerator dose: 1-10Gy 2. 6MV photons from linear accelerator dose: 1-10Gy dose-rate 2-10Gy/min 3. γ Co 60 source dose: 0.1-1Gy dose-rate Gy/min 3. Radiation Facilities CNR Bologna 8.2MeV electrons linear accelerator dose: 2-40MRad γ Co 60 source dose: 2-40MRad Dip. di Fisiopatologia Clinica - Firenze γ Cs 137 source dose: 0.1-1kGy dose-rate: 200 Gy/h University of Florence β from 90 Sr University of Modena α 5.48MeV da 241 Am CERN Geneve 24GeV/c protons fluence up to cm -2
8 4. Dosimetric Characterisation PMMA Cylindrical sample holder Cylindrical ionisation chamber source K6517 Radiation field PMMA phantom (PolyMetylMetAcrylate) source-surface distance: cm Radiation field : 20x20 cm 2 SiC embedded in tissue equivalent epoxy resin to eliminate the contribution of air to the signal
9 Current [na] MeV Electrons dose-rate 4.2Gy/min time [s] Current [A] Co 60 dose-rate 0.21Gy/min γ time [s] V rev = 150 Volt I signal ~1nA I dark ~0.1pA V rev = 0 Volt I signal ~ 50pA I dark ~ 0.1pA Stable signal - high S/N ratio - no priming effects
10 IV characteristics during irradiation with Co 60 Current signal [pa] Gy/min 0.24 Gy/min 0.31 Gy/min Voltage [V] Current response dependent on the square root of reverse voltage V rev Current Signal [pa] V rev = 90 V V rev = 5 V V rev = 40 V Dose rate (cgy/min) Signal linearly dependent on doserate sensitivity: slope of the linear fit
11 Sensitivity as a function of V rev Sensitivity [nc/gy] W = W L = 2ε V q N S = a + b V rev + V built V built-in = 1.7 Volt in bi eff + D (V rev + V bi ) 1/2 [Volt 1/2 ] h τ h Active depth at V rev = 0 Minority carrier diffusion length τ h ~ 500ns D h = µ h K T/e D h = 2.98cm 2 /s µ h = 115 cm 2 /V s W 0 ~1µm L ~ 10µm
12 Comparison between Epitaxial SiC and standard dosimeters Device M. Bruzzi - 1st RD50 Workshop CERN 2-4 October, 2002 bias [V] Vol. [mm 3 ] S [nc/gy] S per unit volume [nc/(gy mm 3 )] Standard Farmer Ionisation chamber Miniature Farmer Ionisation chamber Scanditronix GR-p BS Silicon Scanditronix SFD stereotactic Silicon Epitaxial SiC diode
13 4. α particle detector for nuclear applications α (5.48MeV) from 241 Am M. Bruzzi - 1st RD50 Workshop CERN 2-4 October, 2002 Significant contribution due to diffusion of minority carriers from neutral region R p -W F. Nava et al, NIM A, 2001 W = depletion depth R p = α particle range L = min. carrier diffusion length
14 5. β particle detector for high energy physics experiments Florence CCE set - up, from NIKHEF Amsterdam. Used for diamond in RD42 Shaper- preamplifier Amptek A225 - ENC ~ 300e - with diamond PC with DAQ Software LabView V B 2MeV β PM Tungsten tip 10nF trigger AMPTEK A225 AMP 1 µ s 10M sample 10M 10nF 10nF CuBe spring B Mip Selector Magnet 90 Sr 0.1mCi source
15 W = 22µm # e - = % CCE V dep = 215V N eff =5x10 14 cm -3 V dep
16 5. Radiation Damage Irradiation with 8.2MeV electrons and γ Co 60 up to 40MRad F. Nava et al, RESMDD02, 2002 No increase in the leakage current Slight decrease of the min. carrier diff. length: L =10 1µm 100% CCE after a dose of 40 MRad
17 Irradiation with 24 GeV/c protons up to a fluence:f = 9.4x10 13 p/cm 2 F. Nava et al, RESMDD02, 2002 Slight decrease of the min. carrier diff. length: L =10 1µm 100% CCE after a fluence of p/cm 2
18 M. Bruzzi et al, RESMDD02, 2002 Sensitivity vs. Accumulated Dose after irradiation with Cs 137 V rev = 0 Si p-type CREE Epitaxial 4H-SiC Si n-type
19 7. Conclusions Epitaxial 4H-SiC Schottky Barriers from CREE have been tested as detectors and dosimeters: 100% charge collection efficiency has been measured with β- source with no polarisation effects 100% CCE observed with alpha and mip after irradiation with γ and electrons up to 40MRad and protons up to f~10 14 cm -2, slight decrease of the minority carrier diffusion length. Future steps: decrease in N eff increase in the epitaxial layer thickness investigation in the fluence range up to cm -2 M. Bruzzi - 1st RD50 Workshop CERN 2-4 October, 2002
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