Epitaxial SiC Schottky barriers for radiation and particle detection

Size: px
Start display at page:

Download "Epitaxial SiC Schottky barriers for radiation and particle detection"

Transcription

1 Epitaxial SiC Schottky barriers for radiation and particle detection M. Bruzzi, M. Bucciolini, R. D'Alessandro, S. Lagomarsino, S. Pini, S. Sciortino INFN Firenze - Università di Firenze F. Nava INFN Bologna Università di Modena

2 1. Introduction M. Bruzzi - 1st RD50 Workshop CERN 2-4 October, 2002 Outline 2. Epitaxial SiC Schottky Barriers 3. Radiation Facilities 3. Dosimetric Characterisation 4. Particle Detection α source β source ( mip ) 5. Radiation damage 6. Future applications 7. Conclusions

3 1. 1. Introduction Property Diamond 4H SiC Si Bandgap [ev] Breakdown Field [V/cm] Electron mobility [cm 2 /Vs] Hole mobility [cm 2 /Vs] Saturation velocity [cm/s] Effective atomic number Z eff 6 ~10 14 Dielectric constant ε r e-h creation energy [ev] minority carrier lifetime [s] Wigner Energy [ev] Low leakage current High radiation resistance (?) Signal higher than diamond

4 Energy required to create an e-h pair E = 1.76eV E g e-h pairs per 1µm: Si 89 SiC 51 Diamond 36

5 2. Epitaxial SiC Schottky Barriers Epitaxial 4H-SiC Wafer from CREE (USA) Epitaxial n thickness: µm, N: x10 15 cm -3 substrate n + thickness: µm, N: 6.8x10 18 cm -3 Schottky Contact n 4H-SiC, 30µm, epitaxial layer n + 4H-SiC, 360µm, substrate Buffer layer n + Ohmic Contact Cost : $ 2 in $ 2 in 2002

6 Ohmic Contact Ti/Au thin films Schottky Contact Au (1000Å) Ø 2mm produced by: C.Lanzieri, Alenia Systems, Roma, Italy Leakage Current Capacitance Current [pa] Voltage [V] 500

7 Detector Characterization Radiation Damage Radiotherapy Unit- University of Florence MeV electrons from linear accelerator dose: 1-10Gy 2. 6MV photons from linear accelerator dose: 1-10Gy dose-rate 2-10Gy/min 3. γ Co 60 source dose: 0.1-1Gy dose-rate Gy/min 3. Radiation Facilities CNR Bologna 8.2MeV electrons linear accelerator dose: 2-40MRad γ Co 60 source dose: 2-40MRad Dip. di Fisiopatologia Clinica - Firenze γ Cs 137 source dose: 0.1-1kGy dose-rate: 200 Gy/h University of Florence β from 90 Sr University of Modena α 5.48MeV da 241 Am CERN Geneve 24GeV/c protons fluence up to cm -2

8 4. Dosimetric Characterisation PMMA Cylindrical sample holder Cylindrical ionisation chamber source K6517 Radiation field PMMA phantom (PolyMetylMetAcrylate) source-surface distance: cm Radiation field : 20x20 cm 2 SiC embedded in tissue equivalent epoxy resin to eliminate the contribution of air to the signal

9 Current [na] MeV Electrons dose-rate 4.2Gy/min time [s] Current [A] Co 60 dose-rate 0.21Gy/min γ time [s] V rev = 150 Volt I signal ~1nA I dark ~0.1pA V rev = 0 Volt I signal ~ 50pA I dark ~ 0.1pA Stable signal - high S/N ratio - no priming effects

10 IV characteristics during irradiation with Co 60 Current signal [pa] Gy/min 0.24 Gy/min 0.31 Gy/min Voltage [V] Current response dependent on the square root of reverse voltage V rev Current Signal [pa] V rev = 90 V V rev = 5 V V rev = 40 V Dose rate (cgy/min) Signal linearly dependent on doserate sensitivity: slope of the linear fit

11 Sensitivity as a function of V rev Sensitivity [nc/gy] W = W L = 2ε V q N S = a + b V rev + V built V built-in = 1.7 Volt in bi eff + D (V rev + V bi ) 1/2 [Volt 1/2 ] h τ h Active depth at V rev = 0 Minority carrier diffusion length τ h ~ 500ns D h = µ h K T/e D h = 2.98cm 2 /s µ h = 115 cm 2 /V s W 0 ~1µm L ~ 10µm

12 Comparison between Epitaxial SiC and standard dosimeters Device M. Bruzzi - 1st RD50 Workshop CERN 2-4 October, 2002 bias [V] Vol. [mm 3 ] S [nc/gy] S per unit volume [nc/(gy mm 3 )] Standard Farmer Ionisation chamber Miniature Farmer Ionisation chamber Scanditronix GR-p BS Silicon Scanditronix SFD stereotactic Silicon Epitaxial SiC diode

13 4. α particle detector for nuclear applications α (5.48MeV) from 241 Am M. Bruzzi - 1st RD50 Workshop CERN 2-4 October, 2002 Significant contribution due to diffusion of minority carriers from neutral region R p -W F. Nava et al, NIM A, 2001 W = depletion depth R p = α particle range L = min. carrier diffusion length

14 5. β particle detector for high energy physics experiments Florence CCE set - up, from NIKHEF Amsterdam. Used for diamond in RD42 Shaper- preamplifier Amptek A225 - ENC ~ 300e - with diamond PC with DAQ Software LabView V B 2MeV β PM Tungsten tip 10nF trigger AMPTEK A225 AMP 1 µ s 10M sample 10M 10nF 10nF CuBe spring B Mip Selector Magnet 90 Sr 0.1mCi source

15 W = 22µm # e - = % CCE V dep = 215V N eff =5x10 14 cm -3 V dep

16 5. Radiation Damage Irradiation with 8.2MeV electrons and γ Co 60 up to 40MRad F. Nava et al, RESMDD02, 2002 No increase in the leakage current Slight decrease of the min. carrier diff. length: L =10 1µm 100% CCE after a dose of 40 MRad

17 Irradiation with 24 GeV/c protons up to a fluence:f = 9.4x10 13 p/cm 2 F. Nava et al, RESMDD02, 2002 Slight decrease of the min. carrier diff. length: L =10 1µm 100% CCE after a fluence of p/cm 2

18 M. Bruzzi et al, RESMDD02, 2002 Sensitivity vs. Accumulated Dose after irradiation with Cs 137 V rev = 0 Si p-type CREE Epitaxial 4H-SiC Si n-type

19 7. Conclusions Epitaxial 4H-SiC Schottky Barriers from CREE have been tested as detectors and dosimeters: 100% charge collection efficiency has been measured with β- source with no polarisation effects 100% CCE observed with alpha and mip after irradiation with γ and electrons up to 40MRad and protons up to f~10 14 cm -2, slight decrease of the minority carrier diffusion length. Future steps: decrease in N eff increase in the epitaxial layer thickness investigation in the fluence range up to cm -2 M. Bruzzi - 1st RD50 Workshop CERN 2-4 October, 2002

GaN for use in harsh radiation environments

GaN for use in harsh radiation environments 4 th RD50 - Workshop on radiation hard semiconductor devices for very high luminosity colliders GaN for use in harsh radiation environments a (W Cunningham a, J Grant a, M Rahman a, E Gaubas b, J Vaitkus

More information

Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes

Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes F.Moscatelli, A.Scorzoni, A.Poggi, R.Nipoti DIEI and INFN Perugia and

More information

M. De Napoli, F. Giacoppo, G. Raciti, E. Rapisarda, C. Sfienti. Laboratori Nazionali del Sud (LNS) INFN University of Catania. IPRD Oct.

M. De Napoli, F. Giacoppo, G. Raciti, E. Rapisarda, C. Sfienti. Laboratori Nazionali del Sud (LNS) INFN University of Catania. IPRD Oct. M. De Napoli, F. Giacoppo, G. Raciti, E. Rapisarda, C. Sfienti Laboratori Nazionali del Sud (LNS) INFN University of Catania IPRD08 1-4 Oct. Siena Silicon carbide (SiC) is expected to be applied to high-power

More information

physics/ Sep 1997

physics/ Sep 1997 GLAS-PPE/97-6 28 August 1997 Department of Physics & Astronomy Experimental Particle Physics Group Kelvin Building, University of Glasgow, Glasgow, G12 8QQ, Scotland. Telephone: +44 - ()141 3398855 Fax:

More information

Modelling of Diamond Devices with TCAD Tools

Modelling of Diamond Devices with TCAD Tools RADFAC Day - 26 March 2015 Modelling of Diamond Devices with TCAD Tools A. Morozzi (1,2), D. Passeri (1,2), L. Servoli (2), K. Kanxheri (2), S. Lagomarsino (3), S. Sciortino (3) (1) Engineering Department

More information

Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA

Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA SCIPP 06/16 September 2006 Capacitance-Voltage analysis at different temperatures in heavily irradiated silicon detectors Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA

More information

D. Meier. representing the RD42 Collaboration. Bristol University, CERN, CPP Marseille, Lawrence Livermore National Lab, LEPSI

D. Meier. representing the RD42 Collaboration. Bristol University, CERN, CPP Marseille, Lawrence Livermore National Lab, LEPSI Diamond as a Particle Detector D. Meier representing the RD42 Collaboration Bristol University, CERN, CPP Marseille, Lawrence Livermore National Lab, LEPSI Strasbourg, Los Alamos National Lab, MPIK Heidelberg,

More information

Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors M. K. Petterson, H.F.-W. Sadrozinski, C. Betancourt SCIPP UC Santa Cruz, 1156 High Street,

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Development of radiation hard sensors for very high luminosity colliders - CERN - RD50 project -

Development of radiation hard sensors for very high luminosity colliders - CERN - RD50 project - NIMA 1 NIMA RD5 Internal Note - RD5/23/1 Reviewed manuscript submitted to Vertex 22 Development of radiation hard sensors for very high luminosity colliders - CERN - RD5 project - Michael Moll * CERN,

More information

Schottky Rectifiers Zheng Yang (ERF 3017,

Schottky Rectifiers Zheng Yang (ERF 3017, ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function

More information

CVD Diamond History Introduction to DDL Properties of Diamond DDL Proprietary Contact Technology Detector Applications BDD Sensors

CVD Diamond History Introduction to DDL Properties of Diamond DDL Proprietary Contact Technology Detector Applications BDD Sensors Diamond Detectors CVD Diamond History Introduction to DDL Properties of Diamond DDL Proprietary Contact Technology Detector Applications BDD Sensors Kevin Oliver CEO Alex Brown Sales & Marketing 20 May,

More information

Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe

Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe TUTORIAL Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe Ettore Vittone Physics Department University of Torino, Italy Ettore Vittone 1 IBIC for the functional

More information

SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG

SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG E. Fretwurst 1, D. Contarato 1, F. Hönniger 1, G. Kramberger 2 G. Lindström 1, I. Pintilie 1,3, A. Schramm 1, J. Stahl 1 1 Institute for Experimental

More information

Tracking Detector Material Issues for the slhc

Tracking Detector Material Issues for the slhc Tracking Detector Material Issues for the slhc Hartmut F.-W. Sadrozinski SCIPP, UC Santa Cruz, CA 95064 Hartmut F.-W. Sadrozinski, US ATLAS Upgrade Meeting Nov 10, 2005 1 Outline of the talk - Motivation

More information

Chap. 11 Semiconductor Diodes

Chap. 11 Semiconductor Diodes Chap. 11 Semiconductor Diodes Semiconductor diodes provide the best resolution for energy measurements, silicon based devices are generally used for charged-particles, germanium for photons. Scintillators

More information

Fcal sensors & electronics

Fcal sensors & electronics Fcal sensors & electronics Alternatives and investigations 7 sessions in 2 days: 1-Introduction session 1: Physics and Beam diagnostic using beamcal 2- Session 2 : integration, vacuum issues 3- Session

More information

First Results and Realization Status of a Proton Computed Radiography Device

First Results and Realization Status of a Proton Computed Radiography Device First Results and Realization Status of a Proton Computed Radiography Device V. Sipala for the PRIMA collaboration V.Sipalaa,b, D.LoPrestia,b, N.Randazzob, M.Bruzzid,e, D.Menichellie,d, C.Civininid, M.Bucciolinic,d,

More information

Important point defects after γ and proton irradiation investigated by TSC technique

Important point defects after γ and proton irradiation investigated by TSC technique Important point defects after γ and proton irradiation investigated by TSC technique I. Pintilie a),b), E. Fretwurst b), G. Kramberger c) G. Lindström b) and J. Stahl b) a) National Institute of Materials

More information

junctions produce nonlinear current voltage characteristics which can be exploited

junctions produce nonlinear current voltage characteristics which can be exploited Chapter 6 P-N DODES Junctions between n-and p-type semiconductors are extremely important foravariety of devices. Diodes based on p-n junctions produce nonlinear current voltage characteristics which can

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3

More information

Radiation hardness of Low Gain Amplification Detectors (LGAD)

Radiation hardness of Low Gain Amplification Detectors (LGAD) Radiation hardness of Low Gain Amplification Detectors (LGAD) G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Zavrtanik Jožef Stefan Institute, Ljubljana, Slovenia Ϯ also University of Ljubljana, Faculty

More information

Development of Radiation Hard Si Detectors

Development of Radiation Hard Si Detectors Development of Radiation Hard Si Detectors Dr. Ajay K. Srivastava On behalf of Detector Laboratory of the Institute for Experimental Physics University of Hamburg, D-22761, Germany. Ajay K. Srivastava

More information

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 Your Name: ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 1. Review questions a) Illustrate the generation of a photocurrent in a p-n diode by drawing an energy band diagram. Indicate

More information

Silicon Detectors in High Energy Physics

Silicon Detectors in High Energy Physics Thomas Bergauer (HEPHY Vienna) IPM Teheran 22 May 2011 Sunday: Schedule Silicon Detectors in Semiconductor Basics (45 ) Detector concepts: Pixels and Strips (45 ) Coffee Break Strip Detector Performance

More information

Geant4 simulation of SOI microdosimetry for radiation protection in space and aviation environments

Geant4 simulation of SOI microdosimetry for radiation protection in space and aviation environments Geant4 simulation of SOI microdosimetry for radiation protection in space and aviation environments Dale A. Prokopovich,2, Mark I. Reinhard, Iwan M. Cornelius 3 and Anatoly B. Rosenfeld 2 Australian Nuclear

More information

High-resolution photoinduced transient spectroscopy of radiation defect centres in silicon. Paweł Kamiński

High-resolution photoinduced transient spectroscopy of radiation defect centres in silicon. Paweł Kamiński Institute of Electronic Materials Technology Joint Laboratory for Characterisation of Defect Centres in Semi-Insulating Materials High-resolution photoinduced transient spectroscopy of radiation defect

More information

Silicon Detectors. Particle Physics

Silicon Detectors. Particle Physics Mitglied der Helmholtz-Gemeinschaft Silicon Detectors for Particle Physics 9. August 2012 Ralf Schleichert, Institut für Kernphysik Outline Different Cameras Silicon Detectors Taking Pictures in Particle

More information

Diamond (Radiation) Detectors Are Forever! Harris Kagan

Diamond (Radiation) Detectors Are Forever! Harris Kagan Diamond (Radiation) Detectors Are Forever! Outline of the Talk Introduction to Diamond Recent Results Applications Summary Diamond (Radiation) Detectors Are Forever! (page 1) Introduction Motivation: Tracking

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

Quiz #1 Practice Problem Set

Quiz #1 Practice Problem Set Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions

More information

Semiconductor Detectors are Ionization Chambers. Detection volume with electric field Energy deposited positive and negative charge pairs

Semiconductor Detectors are Ionization Chambers. Detection volume with electric field Energy deposited positive and negative charge pairs 1 V. Semiconductor Detectors V.1. Principles Semiconductor Detectors are Ionization Chambers Detection volume with electric field Energy deposited positive and negative charge pairs Charges move in field

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

Recent Advancement in the Development of Radiation Hard Semiconductor Detectors for Very High Luminosity Colliders - the RD50-Collaboration

Recent Advancement in the Development of Radiation Hard Semiconductor Detectors for Very High Luminosity Colliders - the RD50-Collaboration RESMDD4, Florence, October 1.-13. 24 Recent Advancement in the Development of Radiation Hard Semiconductor Detectors for Very High Luminosity Colliders - the RD5-Collaboration - Motivation RD5-Collaboration

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu.

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu. UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2009 Professor Chenming Hu Midterm I Name: Closed book. One sheet of notes is

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors

EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification

More information

The electron accelerator of the ISOF-CNR Institute: its characteristics and use

The electron accelerator of the ISOF-CNR Institute: its characteristics and use The electron accelerator of the ISOF-CNR Institute: its characteristics and use P. Fuochi, U. Corda, and M. Lavalle ISOF-CNR Institute, Via P. Gobetti 101, I-40129 Bologna, Italy LINAC Laboratory: ISOF-CNR,

More information

Simulation results from double-sided and standard 3D detectors

Simulation results from double-sided and standard 3D detectors Simulation results from double-sided and standard 3D detectors David Pennicard, University of Glasgow Celeste Fleta, Chris Parkes, Richard Bates University of Glasgow G. Pellegrini, M. Lozano - CNM, Barcelona

More information

Lecture 8. Detectors for Ionizing Particles

Lecture 8. Detectors for Ionizing Particles Lecture 8 Detectors for Ionizing Particles Content Introduction Overview of detector systems Sources of radiation Radioactive decay Cosmic Radiation Accelerators Interaction of Radiation with Matter General

More information

Components of a generic collider detector

Components of a generic collider detector Lecture 24 Components of a generic collider detector electrons - ionization + bremsstrahlung photons - pair production in high Z material charged hadrons - ionization + shower of secondary interactions

More information

ECE 340 Lecture 27 : Junction Capacitance Class Outline:

ECE 340 Lecture 27 : Junction Capacitance Class Outline: ECE 340 Lecture 27 : Junction Capacitance Class Outline: Breakdown Review Junction Capacitance Things you should know when you leave M.J. Gilbert ECE 340 Lecture 27 10/24/11 Key Questions What types of

More information

Semiconductor Detectors

Semiconductor Detectors Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge

More information

Challenges for Silicon Pixel Sensors at the XFEL. Table of Content

Challenges for Silicon Pixel Sensors at the XFEL. Table of Content Challenges for Silicon Pixel Sensors at the XFEL R.Klanner (Inst. Experimental Physics, Hamburg University) work by J.Becker, E.Fretwurst, I.Pintilie, T.Pöhlsen, J.Schwandt, J.Zhang Table of Content 1.Introduction:

More information

Lecture 18. New gas detectors Solid state trackers

Lecture 18. New gas detectors Solid state trackers Lecture 18 New gas detectors Solid state trackers Time projection Chamber Full 3-D track reconstruction x-y from wires and segmented cathode of MWPC z from drift time de/dx information (extra) Drift over

More information

Semiconductor materials and detectors for future very high luminosity colliders

Semiconductor materials and detectors for future very high luminosity colliders Semiconductor materials and detectors for future very high luminosity colliders Andrea Candelori Istituto Nazionale di Fisica Nucleare (INFN), Italy On behalf of the CERN Collaboration (http://rd5.web.cern.ch/rd5/)

More information

Lecture 5 Junction characterisation

Lecture 5 Junction characterisation Lecture 5 Junction characterisation Jon Major October 2018 The PV research cycle Make cells Measure cells Despair Repeat 40 1.1% 4.9% Data Current density (ma/cm 2 ) 20 0-20 -1.0-0.5 0.0 0.5 1.0 Voltage

More information

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the

More information

OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626

OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626 OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm

More information

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it. Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The

More information

Control of the fabrication process for the sensors of the CMS Silicon Strip Tracker. Anna Macchiolo. CMS Collaboration

Control of the fabrication process for the sensors of the CMS Silicon Strip Tracker. Anna Macchiolo. CMS Collaboration Control of the fabrication process for the sensors of the CMS Silicon Strip Tracker Anna Macchiolo Universita di Firenze- INFN Firenze on behalf of the CMS Collaboration 6 th International Conference on

More information

ATL-INDET /04/2000

ATL-INDET /04/2000 Evolution of silicon micro-strip detector currents during proton irradiation at the CERN PS ATL-INDET-2000-009 17/04/2000 R.S.Harper aλ, P.P.Allport b, L.Andricek c, C.M.Buttar a, J.R.Carter d, G.Casse

More information

EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS

EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH CERN EP/98 62 11 Juin 1998 STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS A. Ruzin, G. Casse 1), M. Glaser, F. Lemeilleur CERN, Geneva,

More information

Non-traditional methods of material properties and defect parameters measurement

Non-traditional methods of material properties and defect parameters measurement Non-traditional methods of material properties and defect parameters measurement Juozas Vaitkus on behalf of a few Vilnius groups Vilnius University, Lithuania Outline: Definition of aims Photoconductivity

More information

TCT and CCE measurements for 9 MeV and 24 GeV/c irradiated n-type MCz-Si pad

TCT and CCE measurements for 9 MeV and 24 GeV/c irradiated n-type MCz-Si pad TCT and CCE measurements for 9 MeV and 24 GeV/c irradiated n-type MCz-Si pad J. Härkönen 1), E. Tuovinen 1), S. Czellar 1), I. Kassamakov 1), P. Luukka 1), E. Tuominen 1), S. Väyrynen 2) and J. Räisänen

More information

Reduction in Majority-Carrier Concentration in N-Doped or Al-Doped 4H-SiC Epilayer by Electron Irradiation

Reduction in Majority-Carrier Concentration in N-Doped or Al-Doped 4H-SiC Epilayer by Electron Irradiation Reduction in Majority-Carrier Concentration in -Doped or Al-Doped 4H-SiC Epilayer by Electron Irradiation Hideharu Matsuura, Hideki Yanagisawa, Kozo ishino, Takunori ojiri Shinobu Onoda, Takeshi Ohshima

More information

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed) ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free

More information

Charge transport properties. of heavily irradiated

Charge transport properties. of heavily irradiated Charge transport properties of heavily irradiated Characterization SC CVD detectors diamond detectors SC CVDofdiamond for heavy ions spectroscopy Michal Pomorski and MIPs timing Eleni Berdermann GSI Darmstadt

More information

Chapter 7. The pn Junction

Chapter 7. The pn Junction Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting

More information

CMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland

CMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland Available on CMS information server CMS NOTE 2001/023 The Compact Muon Solenoid Experiment CMS Note Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland May 18, 2001 Investigations of operating scenarios

More information

Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation

Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation Ettore Vittone Physics Department University of Torino - Italy 1 IAEA Coordinate Research

More information

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena Tsuyoshi Funaki 1a), Tsunenobu Kimoto 2, and Takashi Hikihara 1 1 Kyoto University, Dept. of Electrical Eng.

More information

Neutron irradiation test of Hamamatsu, SensL and AdvanSiD UV-extended SiPMs

Neutron irradiation test of Hamamatsu, SensL and AdvanSiD UV-extended SiPMs Prepared for submission to JINST Neutron irradiation test of Hamamatsu, SensL and AdvanSiD UV-extended SiPMs arxiv:171.6239v3 [physics.ins-det] 15 Mar 18 M. Cordelli a E. Diociaiuti, a,e,2 R. Donghia,

More information

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Monday, November 11, 013 1 Introduction Chapter 4: we considered the semiconductor

More information

The Hermes Recoil Silicon Detector

The Hermes Recoil Silicon Detector The Hermes Recoil Silicon Detector Introduction Detector design considerations Silicon detector overview TIGRE microstrip sensors Readout electronics Test beam results Vertex 2002 J. Stewart DESY Zeuthen

More information

EE 130 Intro to MS Junctions Week 6 Notes. What is the work function? Energy to excite electron from Fermi level to the vacuum level

EE 130 Intro to MS Junctions Week 6 Notes. What is the work function? Energy to excite electron from Fermi level to the vacuum level EE 13 Intro to S Junctions eek 6 Notes Problem 1 hat is the work function? Energy to ecite electron from Fermi level to the vacuum level Electron affinity of 4.5eV Electron affinity of Ge 4.eV orkfunction

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30

More information

Pixels GaAs Detectors for Digital Radiography. M.E. Fantacci. and. Abstract

Pixels GaAs Detectors for Digital Radiography. M.E. Fantacci. and. Abstract Pixels GaAs Detectors for Digital Radiography M.E. Fantacci Dipartimento di Fisica dell'universita and Sezione I.N.F.N., Pisa, Italy and European Laboratory for Particle Physics (CERN), Geneve, Switzerland

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

Semiconductor Junctions

Semiconductor Junctions 8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss

More information

Lecture 13 - Carrier Flow (cont.), Metal-Semiconductor Junction. October 2, 2002

Lecture 13 - Carrier Flow (cont.), Metal-Semiconductor Junction. October 2, 2002 6.72J/3.43J - Integrated Microelectronic Devices - Fall 22 Lecture 13-1 Contents: Lecture 13 - Carrier Flow (cont.), Metal-Semiconductor Junction October 2, 22 1. Transport in space-charge and high-resistivity

More information

p-n junction biasing, p-n I-V characteristics, p-n currents Norlaili Mohd. Noh EEE /09

p-n junction biasing, p-n I-V characteristics, p-n currents Norlaili Mohd. Noh EEE /09 CLASS 6&7 p-n junction biasing, p-n I-V characteristics, p-n currents 1 p-n junction biasing Unbiased p-n junction: the potential barrier is 0.7 V for Si and 0.3 V for Ge. Nett current across the p-n junction

More information

Semiconductor-Detectors

Semiconductor-Detectors Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor

More information

Semiconductor X-Ray Detectors. Tobias Eggert Ketek GmbH

Semiconductor X-Ray Detectors. Tobias Eggert Ketek GmbH Semiconductor X-Ray Detectors Tobias Eggert Ketek GmbH Semiconductor X-Ray Detectors Part A Principles of Semiconductor Detectors 1. Basic Principles 2. Typical Applications 3. Planar Technology 4. Read-out

More information

Ranjeet Dalal, Ashutosh Bhardwaj, Kirti Ranjan, Kavita Lalwani and Geetika Jain

Ranjeet Dalal, Ashutosh Bhardwaj, Kirti Ranjan, Kavita Lalwani and Geetika Jain Simulation of Irradiated Si Detectors, Ashutosh Bhardwaj, Kirti Ranjan, Kavita Lalwani and Geetika Jain CDRST, Department of physics and Astrophysics, University of Delhi, India E-mail: rdalal@cern.ch

More information

Session 6: Solid State Physics. Diode

Session 6: Solid State Physics. Diode Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between

More information

Development of Radiation Hard Sensors for Very High Luminosity Colliders - CERN-RD50 project -

Development of Radiation Hard Sensors for Very High Luminosity Colliders - CERN-RD50 project - 11 th International Workshop on Vertex Detectors, VERTEX 22, Hawaii, November 3-8, 22 Development of Radiation Hard Sensors for Very High Luminosity Colliders - CERN-RD5 project - Michael Moll CERN - Geneva

More information

Study of radiation damage induced by 82 MeV protons on multipixel Geiger-mode avalanche photodiodes

Study of radiation damage induced by 82 MeV protons on multipixel Geiger-mode avalanche photodiodes Study of radiation damage induced by 82 MeV protons on multipixel Geiger-mode avalanche photodiodes Y. Musienko*, S. Reucroft, J. Swain (Northeastern University, Boston) D. Renker, K. Dieters (PSI, Villigen)

More information

CMS Conference Report

CMS Conference Report Available on CMS information server CMS CR 1998-1 CMS Conference Report Radiation damage effect on Avalanche Photodiodes S. Baccaro 1), J.E. Bateman 2),F.Cavallari 3), V. Da Ponte 4), K. Deiters 5), P.

More information

Midterm I - Solutions

Midterm I - Solutions UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed

More information

Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy

Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Yutaka Tokuda Department of Electrical and Electronics Engineering, Aichi Institute of Technology,

More information

Survey Meter OD-01 Address: Phone: Fax: URL:

Survey Meter OD-01 Address: Phone: Fax:   URL: Survey Meter OD-01 Dose meter and dose rate meter for the measurement of the ambient dose and dose rate equivalent H*(10), dh*(10)/dt and the directional dose and dose rate equivalent H'(0.07), dh'(0.07)/dt

More information

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013 Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance

More information

Development of a Radiation Hard CMOS Monolithic Pixel Sensor

Development of a Radiation Hard CMOS Monolithic Pixel Sensor Development of a Radiation Hard CMOS Monolithic Pixel Sensor M. Battaglia 1,2, D. Bisello 3, D. Contarato 2, P. Denes 2, D. Doering 2, P. Giubilato 2,3, T.S. Kim 2, Z. Lee 2, S. Mattiazzo 3, V. Radmilovic

More information

Theory and applications of the Ion Beam Induced Charge (IBIC) technique

Theory and applications of the Ion Beam Induced Charge (IBIC) technique Università degli Studi di Torino Scuola di Dottorato in Scienza ed Alta Tecnologia Indirizzo di Fisica ed Astro9isica Ciclo XXV Theory and applications of the Ion Beam Induced Charge (IBIC) technique Candidate

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor

More information

A Measuring System with Recombination Chamber for Photoneutron Dosimetry at Medical Linear Accelerators

A Measuring System with Recombination Chamber for Photoneutron Dosimetry at Medical Linear Accelerators A Measuring System with Recombination Chamber for Photoneutron Dosimetry at Medical Linear Accelerators N. Golnik 1, P. Kamiński 1, M. Zielczyński 2 1 Institute of Precision and Biomedical Engineering,

More information

Basic Physics of Semiconductors

Basic Physics of Semiconductors Basic Physics of Semiconductors Semiconductor materials and their properties PN-junction diodes Reverse Breakdown EEM 205 Electronics I Dicle University, EEE Dr. Mehmet Siraç ÖZERDEM Semiconductor Physics

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless

More information

Radiation Tolerant Tracking Detectors for the slhc. Mara Bruzzi Florence University, INFN and SCIPP

Radiation Tolerant Tracking Detectors for the slhc. Mara Bruzzi Florence University, INFN and SCIPP Radiation Tolerant Tracking Detectors for the slhc Mara Bruzzi Florence University, INFN and SCIPP Outline of the talk - Motivations - Radiation damage in FZ Si high resistivity detectors - Defect engineering

More information

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the

More information

Electronic Supplementary Information. Recombination kinetics in silicon solar cell under low-concentration: Electroanalytical

Electronic Supplementary Information. Recombination kinetics in silicon solar cell under low-concentration: Electroanalytical Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Electronic Supplementary Information Recombination kinetics in silicon solar cell

More information

Edgeless sensors for full-field X-ray imaging

Edgeless sensors for full-field X-ray imaging Edgeless sensors for full-field X-ray imaging 12 th iworid in Cambridge July 14 th, 2010 Marten Bosma 12 th iworid, Cambridge - July 14 th, 2010 Human X-ray imaging High spatial resolution Low-contrast

More information

X-ray induced radiation damage in segmented p + n silicon sensors

X-ray induced radiation damage in segmented p + n silicon sensors in segmented p + n silicon sensors Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner, Joern Schwandt Hamburg University, Germany E-mail: jiaguo.zhang@desy.de Deutsches Elektronen-Synchrotron (DESY), Germany

More information

Fabio Schirru, Chiara Nociforo

Fabio Schirru, Chiara Nociforo Development of Diamond Detectors for ToF measurements at the Super-FRS Fabio Schirru, Chiara Nociforo GSI Helmholtzzentrum für Schwerionenforschung Darmstadt - Germany 15/01/2014 2nd ADAMAS Workshop 1

More information

Electrical Characteristics and Fast Neutron Response of Semi-Insulating Bulk Silicon Carbide

Electrical Characteristics and Fast Neutron Response of Semi-Insulating Bulk Silicon Carbide Electrical Characteristics and Fast Neutron Response of Semi-Insulating Bulk Silicon Carbide Peter A. Bryant, Annika Lohstroh, Member IEEE, and Paul J. Sellin, Member IEEE Abstract The electrical characteristics

More information

Gabriele Simi Università di Padova

Gabriele Simi Università di Padova From the pn junction to the particle detector Gabriele Simi Università di Padova Scuola Nazionale "Rivelatori ed Elettronica per Fisica delle Alte Energie, Astrofisica, Applicazioni Spaziali e Fisica Medica"

More information

Radiation Tolerant Sensors for Solid State Tracking Detectors. - CERN-RD50 project

Radiation Tolerant Sensors for Solid State Tracking Detectors. - CERN-RD50 project EPFL LPHE, Lausanne, January 29, 27 Radiation Tolerant Sensors for Solid State Tracking Detectors - CERN-RD5 project http://www.cern.ch/rd5 Michael Moll CERN - Geneva - Switzerland Outline Introduction:

More information

Misan University College of Engineering Electrical Engineering Department. Exam: Final semester Date: 17/6/2017

Misan University College of Engineering Electrical Engineering Department. Exam: Final semester Date: 17/6/2017 Misan University College of Engineering Electrical Engineering Department Subject: Electronic I Class: 1 st stage Exam: Final semester Date: 17/6/2017 Examiner: Dr. Baqer. O. TH. Time: 3 hr. Note: Answer

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are

More information