The Campus. Scientific equipment and facilities

Transcription

1 The Campus. Scientific equipment and facilities

2 Índice General overview...4 Scientific Equipment The cleanroom High Accuracy Lab Biochemistry Facility PI Support Labs PI Wet & Dry Labs... 9 Scientific Facilities The cleanroom High Accuracy Lab Biochemistry Facility PI Support Labs... 27

3 General overview INL was built in a land parcel of about 47,000 m 2 in Braga, close to the university campus of Gualtar, extending along one of the main city avenues up to the East River, and next to municipal leisure sport grounds and a residential neighborhood. It has a built area of about 26,000 m 2. This includes laboratories and cabinets with 7,500 m 2, cleanroom with 1000 m 2, an auditorium and other public areas with 4,800 m2, technical areas with 3,500 m 2, and administrative areas with a total of 700 m 2. The campus will comprise a main scientific building, an incubator, a social support building. 4

4 THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 5

5 Scientific Equipment INL relies on a high-tech research environment formed by state-of-theart and instrumentation. Its square meters of research area is equipped with the latest technologies to address the major challenges in Nanomedicine, Nanotechnologies applied to environmental & food control, nanoelectronics, and nanomachines and molecular manipulation at nanoscale. 1. The cleanroom 1.1. Nanolithography Electron-beam Lithography High-resolution SEM for Critical Dimension 1.2. Photolithography Direct Laser Writer Mask Aligner Coater/Developer Track HMDS Priming and Image Reversal Oven Optical Microscopes 1.3. Wet Process Wet Benches and Fume Hoods 1.4. Planarization Chemical Mechanical Polishing and Planarization Tool 6

6 1.5. RIE and Deposition Plasma-Enhanced Chemical Vapor Deposition Tool for SiO2 or SiNx Physical Vapor Deposition Tool for metallization and passivation Reactive Ion Etching System for SiO2 and SiNx Reactive Ion Etching System for AlSiCu and TiN Ion Milling System UHV PVD Deposition System with Magnetrons in Confocal geometry Deep Si-Etching System Plasma Asher for Deposition Tools Multi-target physical vapor deposition cluster tool Chemical Vapor Deposition for Carbon Nanotubes and Nanowires 1.6. Analytical Instrumentation Spectroscopic Ellipsometer Contact Profilometer Four-Probe Tester 1.7. Cleanroom Biology and BioChemistry Bay THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 7

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8 2. High Accuracy Lab Dual FIB with HRSEM X-Ray Photoelectron Spectroscopy XRD amd SAXS Diffractometer 200 Kv TEM/SEM microscope with probe aberration correction Enviromental SAM Chilled rooms 3. Biochemistry Facility Equipment for FPLC/HPLC protein purification Spectrophotometry, mass spectrography with gas chromatography Flow cytochemistry and cell sorting Real-time PCR Confocal microscopy and centrifugation (ultra and low-speed) and cell culture 4. Support Labs Cascade Probe Station Magnetoresistive Tester Vibrating Sample Magnetometer SQUID Magnetic Annealing Set-up Device Assembly (Packaging Lab) Radiofrequency and electrical characterization lab Central biochemistry laboratory 5. PI Wet & Dry Labs Magnetonic and sprintronics lab NEMS/MEMS Lab Nanochemestry and particle synthesis lab THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 9

9 Scientific Facilities The Main scientific Building is the ex-libris of the campus. Its architecture has been configured to have a high visual impact when seen from the outside, especially the iconic monolith of the cleanroom block. The scientific infrastructure comprises central laboratories and specialized laboratories associated with individual Principal Investigators (PIs) or research groups and research topics. Its central facility consists of state-of-the-art nanofabrication and characterization areas with a class 1000 cleanroom as well as class 100 cleanroom spaces for the lithography. 1. The cleanroom INL cleanroom has eight bays through seven bays. It comprises approximately 450 m 2 space of Class 1000 and 150 m 2 space of Class 100 offering Micro- and nanofabrication solutions for 200 mm wafers down to small-sized sample pieces Nanolithography Electron-beam Lithography The electron-beam lithography system is designed a 100 Kv system for high resolution fabrication and placement of patterns written directly on substrates up to 200mm. 10

10 Electron-beam Lithography High-resolution SEM for Critical Dimension Scanning electron microscopy will be installed during the second semester of 2011 THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 11

11 1.2. Photolithography Direct Laser Writer The DWL is a high resolution, laser-based maskless optical lithography system with two lasers (standard and UV Laser). The tool has the capability to write directly on substrates such as silicon and quartz wafers. Direct Laser Writer 12

12 Mask Aligner Mask aligners are used to transfer masks onto substrates coated with photoresist. It is a high resolution contact mask aligner, with sub-micron feature capability in positive tone resists. In addition to the highly accurate top-side alignment capability, it can perform bottom-side alignment with the use of a second alignment microscope, offering superior performance to IR-based systems used elsewhere for backside alignment. The versatile mask holder allows both round and square plates as masks, and the sample plate accommodates small and odd-shaped substrates. Mask Aligner THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 13

13 Coater/Developer Tracks The cluster tracks enable automatic spin coating and develop process of up to 200 mm wafers for multi-layer and resist coating. There are two separate tracks, one for optical resist and a second one for electron-beam resists. Both systems include a submicron Coater module with pivoting dispense arm, top and bottom EBR, puddle and spray development chamber, programmable exhaust flow controller, temperature controlled lines, and drain full sensor. These systems are capable of processing up to 25 wafers in one batch. Coater/Developer Track 14

14 HMDS Priming and Image Reversal Oven HDMS Priming allows maximum adhesion of Photoresist over wafer surface and the reversal Oven creates an undercut profile in the photoresist for liftoff processing by NH3 (ammonia) gas. HMDS Priming and Image Reversal Oven THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 15

15 1.3. Wet Process Wet Benches and Fume Hoods Wet Benches are stations for wet etching and cleaning of wafers and devices. The various wet benches differ in the specific process modules available and the materials allowed at each station. INL is equipped with Wet benches for post lithography steps such as resist stripping, lift-off, metal and oxide etching Planarization Chemical Mechanical Polishing and Planarization Tool Chemical mechanical planarization is a process that can smoothen topography or various materials. It is used to planarize oxide, poly silicon or metal layers in order to prepare them for post-lithographic steps, avoiding depth focus problems during illumination of photosensitive layers. Tool includes a two-carrier system for polishing and planarizing single wafers with diameters up to 200mm as well as for coupons and part wafers (irregular-shaped samples). Wet Benches and Fume Hoods 16

16 1.5. RIE and Deposition Multi-target physical vapor deposition cluster tool The Multi-target physical vapor deposition cluster tool is especially designed for deposition of ultra thin films, magnetic films, high quality metallic, conductive and insulating films and multiple film stack deposition comprising these materials without the need to break ultra-high vacuum. The system is a UHV single wafer cluster tool consists of one transport module, one multi-target PVD module and one soft etch/ oxidation module. It is capable of deposit different magnetic and non magnetic layers on wafers with diameters up to 200mm by DC/RF Magnetron Sputtering, with good uniformity for the deposited stacks. Multi-target physical vapor deposition cluster tool THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 17

17 Chemical Vapor Deposition for Carbon Nanotubes and Nanowires A dedicated CVD equipment for carbon nanotube growth on wafers with process flexibility to grow various aspect ratios for applications such as field emission sources, bio sensors, microfluidics, among others.this Nanoscale Growth System delivers high performance growth of nanotubes and nanowires with in-situ catalyst activation and rigorous process control with flexible temperature up to 800 C. Chemical Vapor Deposition for Carbon Nanotubes and Nanowires 18

18 Plasma-Enhanced Chemical Vapor Deposition Tool for SiO2 or SiNx A tool dedicated to silicon oxide and silicon nitride deposition by Plasma Enhanced Chemical Vapour Deposition (PECVD). It has a single wafer processing chamber and dual high/low frequency RF options. It uses a plasma to enhance the chemical reaction rates of the precursors, which allows deposition of thin films at lower temperatures (typically <350 C) than conventional CVD systems. Plasma-Enhanced Chemical Vapor Deposition Tool for SiO2 or SiNx THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 19

19 Physical Vapor Deposition Tool for metallization and passivation A system for rapid physical vapour deposition, by DC/RF Magnetron Sputtering. This cluster tool consists in a central dealer, a 200 mm-cassette load lock, a soft-etch module, a three-target linear module (AlSiCu, TiN, SiO2 or AlOx) with two DC and one RF sources, and a soft etch module. Reactive Ion Etching System for SiO2 and SiNx A system for Reactive Ion Etching consisting of a load lock for 200mm diameter wafers and a process chamber for anisotropic etching of silicon oxide, silicon nitride, polysilicon, and other materials such as amorphous Si, using a plasma source and fluorine chemistry. Reactive Ion Etching System for SiO2 and SiNx 20

20 Reactive Ion Etching System for AlSiCu and TiN A system for reactive ion etching consisting of a load lock for 200mm wafers and a process chamber for anisotropic etching of AlSiCu and TiN, using an Inductively Coupled Plasma (ICP) and chlorine based chemistry. The ICP process module delivers high density plasma using a conventional radial ICP coil design that ensures uniform plasma. Through the use of a low-pressure operating window, anisotropic profiles can be achieved. The control of ion bombardment at the wafer surface by varying the bias power ensures low damage and a controllable etch process. Reactive Ion Etching System for AlSiCu and TiN THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 21

21 Ion Milling System with SEMS and point detection A system for material removal by ion milling which includes a load lock for single wafer loading or for cassettes of 200mm wafers and a process chamber. The system includes a SEMS and point detector. UHV PVD Deposition System with Magnetrons in Confocal geometry A multi-target UHV sputtering system consisting of a deposition chamber with eleven 2 diameter magnetrons in confocal geometry for the codeposition of material. The system deposits uniformly on 2 diameter waffers but can handle 200 mm waffer. UHV PVD Deposition System with Magnetrons in Confocal geometry 22

22 Deep Si-Etching System The Deep Si-Etching System uses the Bosch process to cut deep, high aspect ratio channels in silicon. The system consists in a single wafer load lock and a process chamber for the anisotropic etching of Si trenches and through wafer vias. Used primarily for MEMs devices, common materials uses in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. Deep Si-Etching System THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 23

23 1.7. Analytical Instrumentation Spectroscopic Ellipsometer A tool to perform non-destructive optical ellipsometry for determining film thickness and optical properties, such as index of refraction (n) and extinction coefficient (k), capable of a 100mm diameter inspection area but with a stage for 200mm wafers. Spectroscopic Ellipsometer includes: Laser 532 nm, 15 mw, Spectroscopic Box with fiber coupling, Xe Arc lamp and 46 filters, motorized goniometer. Allows: analysis with high accuracy and precision, analysis of multilayer/ multi parameter systems, to choose a proper wavelength for absorbing materials, optimized sensitivity by wavelength tuning. Spectroscopic Ellipsometer Contact Profilometer The contact profilometer is a surface metrology analysis tool which provides stylus profiling analysis of surface topography. The tool is capable ofperforming automated step height analysis, surface contour measurements, waviness and roughness measurement with detailed 2D or 3D analysis of topography for a variety of surfaces and materials. Contact Profilometer 24

24 Four-Probe Tester A four-probe tester, automatic system to measure Sheet Resistance and Resistivity of wafers, up to 200mm in diameter. The tool contains data analysis functions such as: Data Map, 3D Contour Maps, Diameter Scan, Trend Analysis, etc. Measurements range from 1mΩ/sq to 2MOhm/sq, resistivity between 2μΩ.cm to 200 kω.cm and the electronic accuracy remains in 0.5% for V/I. Four-Probe Tester THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 25

25 2. High Accuracy Lab Dual FIB with SEM Workstation combining Scanning Electron Microscope and Focused Ion Beam for nanoprototyping, nano-machining, nano-analysis and advanced sample preparation. Simultaneously images are achieved with the electron beam at ultra-high resolution using a Schottky field emitter while at the same time thinning with the ion beam using a liquid Gallium ion emitter. Instrument to be installed during the second semester of X-Ray Photoelectron Spectroscopy An analytical X-Ray Photoelectron Spectroscopy (XPS) system with multitechnique capability (AES/SAM/ISS/REELS) able to produce chemical maps with lateral resolution of <10 μm (or <20 μm for small area analysis). Instrument to be installed during the second semester of XRD Diffractometer An X-Ray Diffractometer, a non-destructive technique used for analytical tasks such as grazing incidence, in-plane diffraction, reciprocal space mapping, reflectometry, and small-angle scattering for thin film research; studying layer thickness, lattice constants, lattice mismatch, periodicity, mosaic spreads, lattice stress and strain, composition, etc. Applications include optics, nanotechnology storage media, polymers, metals, minerals, catalysts, plastics, pharmaceuticals, thin-film coatings, ceramics, and semiconductors. Instrument to be installed during the second semester of

26 3. Biochemistry Facility The Central Biology and Biochemistry facility provides support for groups developing biology and biochemistry activities. These infrastructure is currently under a definition/installation phase but some equipments have been already projected: Equipment for FPLC/HPLC protein purification Spectrophotometry, mass spectrography with gas chromatography, flow cytochemistry and cell sorting Real-time PCR Confocal microscopy and centrifugation (ultra and low-speed) and cell culture The facility will also include the necessary supporting infrastructure, as optical and fluorescence microscopes, different low temperature chambers and freezers, a dark room, a sterile chamber with laminar flow, extraction benches, etc. 4. PI Support Labs Other common capabilities will support the Nanofabrication Cleanroom, the High Accuracy Labs and the Principal Investigator laboratories, These include: Device Assembly (packaging) Lab High Frequency device characterization Lab Nanostructures Fabrication Lab (Nanoparticle, nanotubes, etc.) THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 27

27 Some equipment has been already incorporated to the INL instrumentation catalogue: Semi automatic Probe Station A semi-automatic wafer probe station used to automatically gather electrical characterization data of devices at wafer level. This tool is useful to extract statistically meaningful data concerning key device parameters and microfabrication process dependent deviations. Features and benefits : Precise 200mm probe system, with pre-programmed test sequences Sub-micron probing capability Die-to-die stepping time of under 100ms Able to probe up to 20 die/sec. Semi automatic Probe Station 28

28 Magnetoresistive Tester A prober used to extract TMR and RxA from bulk magnetic tunnel junction stacks, using a current-in-plane TMR measurement. The MTJ stack surface is contacted by a set of 12 cantilever electrodes with a variable spacing, down to 750nm. Features and benefits : Capability to measure the TMR of unpatterned MTJ stacks with an RxA down to 0.1 Ohm um2 Capable of measuring the TMR in MTJs with both in-plane and perpendicular anisotropy In plane field up to 2500 Oe and perpendicular field up to 1400 Oe Magnetoresistive Tester THE CAMPUS. SCIENTIFIC EQUIPMENT AND FACILITIES 29

29 Vibrating Sample Magnetometer The Vibrating Sample Magnetometer system can measure samples with extremely low magnetic signals (5x10-7 emu) and/or very low coercivities (10mOe) in fields up to 2T. The system supports all known types of magnetic measurements such as Hysteresis and minor loops, IRM and DCD Remanence Loops, SFD, Delta M, Delta H and Henkel Plots, as well as Angular and AC Remanence Loops, Temperature scans, and Time-decay measurements. It can perform measurements at low fields, with a H resolution of 0.01 Oe. Possibility of automatic sample handling, with up to 90 samples. SQUID This SQUID based magnetometry system allows magnetic moment measurements with a sensitivity down to 1x10-8 emu (low fields), in a temperature range from 1.8K to 400K, and under a magnetic field ranging up to ±70 koe. The main module is liquid Helium-free, meaning that it works using a closedcycle refrigeration system able to provide the initial liquid he required for cooldown from a gas source, and to maintain the system operational at the required temperature and field ranges. Magnetic Annealing Set-up A set-up for the annealing of samples up to 400 C, under controlled magnetic fields and environment, in fields up to 1 to 2 T, in Ar or vacuum, with programmable temperature ramps and cooldowns. The system can handle from wafer fragments to 200mm wafers and is capable of applying the magnetic field either in plane or perpendicular to the plane of the wafer. 30

30 Av. Mestre José Veiga Braga - Portugal Tel Fax office@inl.int