El impacto de la Metrología en el Laboratorio Ibérico Internacional de Nanotecnología (INL)

Transcription

1 El impacto de la Metrología en el Laboratorio Ibérico Internacional de Nanotecnología (INL) José Rivas Director General Madrid, June 13th,

2 WHAT IS NANOTECHNOLOGY? Nanoscience and nanotechnology are based on the control of the structure and function of materials on the nanometre scale, i.e. on the scale of one billionth of a metre. The gateway to nanoscience and nanotechnology has been opened more than 100 years ago: >W.C. Röntgen: The x-rays >Planck, Heisenberg, Schrödinger, and Einstein: quantum mechanics. 2

3 NANOTECHNOLOGY CONCEPTS During the last 100 years, a truly breathtaking scientific and technological development has taken place, which can be illustrated by quoting three scientists: >1900, Ernst Mach: Atoms cannot be perceived by the senses. They can never be seen or touched, and exist only in our imagination. >1950, Richard Feynman: The principles of physics do not speak against the possibility of manipulating things atom-by-atom. >2000, Sir Richard Smalley: Nanotechnology is the art of building devices at the ultimate level of finesse: atom-by-atom. 3

4 Nanotechnology. A little bit of history **The term Nanotechnology was defined by Tokyo Science University Prof. Norio Taniguchi in **In the 80s many breakthroughs in Nanosciences: The invention of the scanning tunneling microscope (STM) in The discovery of fullerenes in The invention of the atomic force microscope (AFM) in Many advances in the synthesis and properties of nanocrystals, metal oxide nanoparticles, Quantum Dots and Carbon Nanotubes. Why cannot we write the entire 24 volumes of the Encyclopedia Britannica on the head of a pin? Richard P. Feynman in

5 What is a nanometer? Each time he moves his arm, his beard grows 1 nanometer!!! 5

6 Some basic concepts MACROSCOPIC Size Regimes MESOSCOPIC MICROSCOPIC (ATOMIC) D 10 3 nm (1 m) N BULK D ~ nm N ~ COLLOIDS D ~ nm N ~ D 10 Å N 10 ATOMS & MOLECULES NANOPARTICLES CLUSTERS 6

7 Types of Nanostructures Features: Unique structures Interplay of materials Interface intensive Degrees of freedom: Dimensionality Materials Entity size (nm) Patterning Fabrication: Sputtering Evaporation MBE Laser Ablation Electrodeposition Chemical reactions Processing: Photolithography E-beam lithography Self-assembly nanolithography 7

8 The nanotechnology market in GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

9 Branches with impact of nanotechnology on high-tech,low-tech and core industrial branches. GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

10 Nanotechnology in numbers 1 trillion of US Dollars in 2015 In the worst scenario 10

11 What is required to succeed in Nanotechnology? Passion for Science and Technology. Multidisciplinary approach (space for Physicists, Chemists, Engineers, Biologists, and medical doctors, graphic designers, entrepreneurs,. Infrastructures and scientific equipment (Private and Public Investments). Highly skilled teams of experts in Nanosciences. 11

12 Nanotechnology market evolution GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

13 Nanotechnology now Rafa Nadal s raquet is made with Carbon Nanotubes Nano, the next dimension Film produced for European Commission Cosmetics: L Oreal is the company with the highest number of patents in Nanotechnology (European Patent Office). More examples on : 13

14 Where are the opportunities? Near-term (1-5 years) Nanocomposites with greatly improved strength-to-weight ratio, toughness, etc. Nanomembranes and filters (including for water purification and desalination) Nanoparticles with catalytic, antibacterial, optical or magnetic properties. Sensitive, selective, reliable solid-state chemical and biological sensors Point-of-care medical diagnostic devices Long-lasting, rechargeable batteries 14

15 Where are the opportunities? Mid-term Targeted drug therapies (5-10 years): Enhanced medical imaging High efficiency, cost effective solar cells Improved fuel cells Efficient technology for water to hydrogen conversion 15

16 Where are the opportunities? Long-term (+20 years): Drug delivery through cell walls Molecular electronics All-optical information processing for complex networks Neural prosthetics for treating paralysis, blindness, etc. Conversion of energy from the environment (thermal or chemical) 16

17 Benefits and risks of nanotechnology; some examples. GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

18 Nanometrology Nanometrology is a subfield of metrology, concerned with the science of measurement at the nanoscale level. Nanometrology has a crucial role in order to produce nanomaterials and devices with a high degree of accuracy and reliability in nanomanufacturing. GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

19 Nanometrology Encuentro de las ciencias y el acoplamiento de la micro y nano-mundo. GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

20 Nanometrology Información obtenida por diferentes técnicas GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

21 Nanometrology. GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

22 Nanometrology GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

23 The nanotechnology market in El triángulo de la estandarización, la instrumentación y la metrología. GENNESYS, Ed. H. Dosch, M.H. Van de Voorde. Max-Planck-Institut für Metallforschung, Stuttgart

24 What is required to succeed in Nanotechnology? Passion for Science and Technology. Multidisciplinary approach (space for Physicists, Chemists, Engineers, Biologists, and medical doctors, graphic designers, entrepreneurs,. Infrastructures and scientific equipments (Private and Public Investments). Plenty of opportunities for SMEs targeted to highly profitable Niche Markets. Highly skilled teams of experts in Nanosciences. 24

25 An example of a Nanotechnology Research facility. 25

26 INL aims Promote outstanding researchers Interdisciplinary research subjects Flexible, dynamic research units Rigorous quality control International orientation Active support of technology transfer Institutional co-operation with foreign research organizations for a mutual benefit Training activities of young researchers 26

27 Idea: The decision to create the INL 19 November 2005: creation and the joint management of a Portuguese and Spanish Institute of R&D (Portuguese and Spanish International Research Laboratory). 23 November 2006: Approval of the legal statutes, conferring an international character to the Institute 19 March 2007: Creation of a Commission to prepare the installation of the INL. 18 January, 2008: Official Presentation of the INL building design with a symbolic foundation stone 17 July 2009 : Official presentation of the INL building September 2009, 1st tender for central lab equipment October 2010, 2nd tender for central lab equipment February 2011, All personnel (research and administrative staff) started to work at new INL facilities. 27

28 The Idea Subject: Nanotechnology & Nanoscience Researchers: ~ 200 Total Staff: Location: Status: ~ 400 people Braga International Research Organization 28

29 The Idea INL is located in Braga, in the North of Portugal and very close to the Spanish-Portuguese Cross Boarder 29

30 The Idea Research Areas 1)NANOMEDICINE: molecular diagnosis systems and chips, drug delivery, imaging solutions, biomolecular labels, neuroelectronics 2) ENVIRONMENTAL AND FOOD CONTROL: Nanotechnology applied to Food industry, food safety and environmental control. Water and Soil control, air pollution monitoring, artificial nanopore sensors, lab-on-a-chip technologies, Smart Packaging and labels, food control process, biosensing technologies, 3) NANOELECTRONICS: NEMS/MEMS, Spintronics, Photonics, Nanofluidics,, Molecular electronics, Organic electronics, Nanotechnologies to support the previous research areas 4) NANOMANIPULATION: Single molecule/atom manipulation, molecular motors, nanotwezzers, Sellf assemby controlled processes of building blocks for nanodevices. 30

31 September

32 3. The Building The construction of the International Iberian Nanotechnology Laboratory building started in May Today, INL has a built area of about 26,000 m2. This includes: About m 2 of scientific area. Laboratories 7,500 m 2, Cleanroom 1000 m 2, Auditorium and other public areas 4,800 m 2, technical areas 3,500 m 2, Administrative areas 700 m 2. Wet Labs (Floor 1) "Clean room" High Accuracy Laboratory Dry Labs (Floor 0) 32

33 Resources- Infrastructures 33

34 4- Scientific Infrastructure Biology & Biochemistry cleanroom bay (bay 1): PDMS and SU8 processing Spectral ellypsometry Contact angle measurement Microspotter RIE/Films Deposition (bays 3+4): Multi-Target PVD cluster tool for 200mm wafers(singulus Timaris), 10 targets + oxidation + heater Confocal Multitargeti cluster tool (11x2 targets, heater, oxidation) Metallization tool, Singulus 4 target module + soft etch PECVD for SiO2 and SiNx (STS MPX) Ion Milling System with SIMS (NORDIKO TECH) RIE for SiO2 and SiNx, STS LPX (ICP) RIE for Al and other metals, STS LPX (ICP) Deep-Silicon Etching System, STS Pegasus Plasma asher Wet Process (bay 6): Wet Bench for contaminated solvents Wet Bench for Oxides Wet Bench for Metals Fume-hood for Cu electro deposition Photholithography (bay 7): Direct Laser Writer Lithography UV Mask and Bond Aligner Coat/Develop Track for Optical Resist Coat/Develop Track for e-beam resist HMDS Priming and Image Reversal Oven Nanolithography (bay 8): E-beam Lithography System (late June 2011) Scanning Electronic Microscope (July 2011) Hot Process & Planarization (bay5): CNT, Graphene CVD, Roth and Rau Chemical Planarization Furnaces 34

35 4- Scientific Infrastructure INL cleanroom has eight bays through seven bays. It comprises approximately 450 m2 space of Class 1000 and 150 m2 space of Class 100 offering Micro- and nanofabrication solutions for 200 mm wafers down to small-sized sample pieces. 1.1 Nanolithography Electron-beam Lithography The electron-beam lithography system is designed a 100 KV system for high resolution fabrication and placement of patterns written directly on substrates up to 200mm. 6 8 nm minimun features. VISTEC EBPG5200 High-resolution SEM for Critical Dimension Scanning electron microscopy will be installed during the second semester of 2011 HR FEI NOVA Nano SEM nm at 30 kv 1.4 nm at 1 kv 35

36 4- Scientific Infrastructure 1.2. Photolithography Direct Laser Writer The DWL is a high resolution, laser-based maskless optical lithography system with two lasers (standard and UV Laser). The tool has the capability to write directly on substrates such as silicon and quartz wafers. HEIDELBERG INSTRUMENTS. Model OWL 66 FS 0.6 µm minimum features, up to 200 mm wafers 36

37 4- Scientific Infrastructure Mask Aligner Mask aligners are used to transfer masks onto substrates coated with photoresist. It is a high resolution contact mask aligner, with sub-micron feature capability in positive tone resists. In addition to the highly accurate top-side alignment capability, it can perform bottom-side alignment with the use of a second alignment microscope, offering superior performance to IR-based systems used elsewhere for backside alignment. The versatile mask holder allows both round and square plates as masks, and the sample plate accommodates small and odd-shaped substrates. KARL-SUSS, MA-BA-6 ; ~ 0.6 µm minimum resolution. 37

38 4- Scientific Infrastructure Coater/Developer Tracks The cluster tracks enable automatic spin coating and develop process of up to 200 mm wafers for multi-layer and resist coating. There are two separate tracks, one for optical resist and a second one for electron-beam resists. Both systems include a submicron Coater module with pivoting dispense arm, top and bottom EBR, puddle and spray development chamber, programmable exhaust flow controller, temperature controlled lines, and drain full sensor. These systems are capable of processing up to 25 wafers in one batch. KARL SUSS 38

39 4- Scientific Infrastructure HDMS Priming allows maximum adhesion of Photoresist over wafer surface and the reversal Oven creates an undercut profile in the photoresist for lift off processing by NH3 (ammonia) gas. 39

40 4- Scientific Infrastructure 1.3. Wet Process Wet Benches and Fume Hoods Wet Benches are stations for wet etching and cleaning of wafers and devices. The various wet benches differ in the specifi c process modules available and the materials allowed at each station. INL is equipped with Wet benches for post lithography steps such as resist stripping, lift-off, metal and oxide etching Planarization Chemical Mechanical Polishing and Planarization Tool Chemical mechanical planarization is a process that can smoothen topography or various materials. It is used to planarize oxide, poly silicon or metal layers in order to prepare them for post-lithographic steps, avoiding depth focus problems during illumination of photosensitive layers. Tool includes a two-carrier system for polishing and planarizing single wafers with diameters up to 200mm as well as for coupons and part wafers (irregular-shaped samples). 40

41 4- Scientific Infrastructure 1.5. RIE and Deposition SINGULUS TIMARIS Tool 200 mn wafers, sub nm ( ~ 0.7 nm ) thickness resolution Multi-target physical vapor deposition cluster tool The Multi-target physical vapor deposition cluster tool is especially designed for deposition of ultra thin films, magnetic films, high quality metallic, conductive and insulating films and multiple film stack deposition comprising these materials without the need to break ultra-high vacuum. The system is a UHV single wafer cluster tool consists of one transport module, one multi-target PVD module and one soft etch/ oxidation module. It is capable of deposit different magnetic and non magnetic layers on wafers with diameters up to 200mm by DC/RF Magnetron Sputtering, with good uniformity for the deposited stacks. 41

42 4- Scientific Infrastructure Chemical Vapor Deposition for Carbon Nanotubes and Nanowires A dedicated CVD equipment for carbon nanotube growth on wafers with process flexibility to grow various aspect ratios for applications such as field emission sources, bio sensors, microfluidics, among others. This Nanoscale Growth System delivers high performance growth of nanotubes and nanowires with in-situ catalyst activation and rigorous process control with flexible temperature up to 800 C. ROTH & RAU AG 42

43 4- Scientific Infrastructure Plasma-Enhanced Chemical Vapor Deposition Tool for SiO2 or SiNx A tool dedicated to silicon oxide and silicon nitride deposition by Plasma Enhanced Chemical Vapour Deposition (PECVD). It has a single wafer processing chamber and dual high/low frequency RF options. It uses a plasma to enhance the chemical reaction rates of the precursors, which allows deposition of thin films at lower temperatures (typically <350 C) than conventional CVD systems. SPTS, Model MPX 43

44 4- Scientific Infrastructure Physical Vapor Deposition Tool for metallization and passivation A system for rapid physical vapour deposition, by DC/RF Magnetron Sputtering. This cluster tool consists in a central dealer, a 200 mm-cassette load lock, a soft-etch module, a three-target linear module (AlSiCu, TiN, SiO2 or AlOx) with two DC and one RF sources, and a soft etch module. SINGULUS, MTM TOOL, 200 mm waferss Reactive Ion Etching System for SiO2 and SiNx A system for Reactive Ion Etching consisting of a load lock for 200mm diameter wafers and a process chamber for anisotropic etching of silicon oxide, silicon nitride, polysilicon, and other materials such as amorphous Si, using a plasma source and fluorine chemistry. SPTS, Model LPX 44

45 4- Scientific Infrastructure Reactive Ion Etching System for AlSiCu and TiN A system for reactive ion etching consisting of a load lock for 200mm wafers and a process chamber for anisotropic etching of AlSiCu and TiN, using an Inductively Coupled Plasma (ICP) and chlorine based chemistry. The ICP process module delivers high density plasma using a conventional radial ICP coil design that ensures uniform plasma. Through the use of a low-pressure operating window, anisotropic profi les can be achieved. The control of ion bombardment at the wafer surface by varying the bias power ensures low damage and a controllable etch process. SPTS, Model LPX 45

46 4- Scientific Infrastructure Ion Milling System with SIMS and point detection A system for material removal by ion milling which includes a load lock for single wafer loading or for cassettes of 200mm wafers and a process chamber. The system includes a SEMS and point detector. NORDIKO TECH, Model 6500 Ion Mill. UHV PVD Deposition System with 11 Magnetrons in Confocal geometry A multi-target UHV sputtering system consisting of a deposition chamber with eleven 2 diameter magnetrons in confocal geometry for the codeposition of material. The system deposits uniformly on 2 diameter waffers but can handle 200 mm waffer. KENOSISTEC 46

47 4- Scientific Infrastructure Deep Si-Etching System The Deep Si-Etching System uses the Bosch process to cut deep, high aspect ratio channels in silicon. The system consists in a single wafer load lock and a process chamber for the anisotropic etching of Si trenches and through wafer vias. Used primarily for MEMs devices, common materials uses in this etcher are silicon wafers, photoresist and thin films of silicon dioxide and silicon nitride. SPS, PEGASUS 47

48 4- Scientific Infrastructure 1.7. Analytical Instrumentation Spectroscopic Ellipsometer A tool to perform non-destructive optical ellipsometry for determining film thickness and optical properties, such as index of refraction (n) and extinction coefficient (k), capable of a 100mm diameter inspection area but with a stage for 200mm wafers. Spectroscopic Ellipsometer includes: Laser 532 nm, 15 mw, Spectroscopic Box with fiber coupling, Xe Arc lamp and 46 fiiters, motorized goniometer. Allows: analysis with high accuracy and precision, analysis of multilayer/ multi parameter systems, to choose a proper wavelength for absorbing materials, optimized sensitivity by wavelength tuning. ACCURION GMBH Contact Profilometer The contact profilometer is a surface metrology analysis tool which provides stylus profiling analysis of surface topography. The tool is capable o fperforming automated step height analysis, surface contour measurements, waviness and roughness measurement with detailed 2D or 3D analysis of topography for a variety of surfaces and materials, VEECO, Vertical Resolution 5 nm 48

49 4- Scientific Infrastructure Four-Probe Tester A four-probe tester, automatic system to measure Sheet Resistance and Resistivity of wafers, up to 200mm in diameter. The tool contains data analysis functions such as: Data Map, 3D Contour Maps, Diameter Scan, Trend Analysis, etc. Measurements range from 1mΩ/sq to 2MOhm/sq, resistivity between 2μΩ.cm to 200 kω.cm and the electronic accuracy remains in 0.5% for V/I. 49

50 4- Scientific Infrastructure The High Accuracy Laboratory will allow in-house detailed structural characterization of thin films, interfaces and nanostructures. High accuracy labs ( NIST A ) Dual FIB with UHRSEM ( FEI Helios + Magellan SEM) DEC 2011) 200 kv probe corrected analytical TEM/STEM (Titan + ChemiStem Jan 2012) Environmental SEM ( FEI QUANTA FEG AUG 2011) X-Ray Photoelectron Spectroscopy ( TERMO ESCALAB organic and inorganic surfaces, DEC 2011) X-Ray Diffractometers ( Thin films-panalytical and SAXS, June 2011) Scanning Probe Microscope Systems (BIO on invereted microscope and Materials), July kv image corrected TEM/STEM ( tender in preparation ) 50

51 4- Scientific Infrastructure A) Dual FIB with HR SEM (FEI HELLOS 450 S ) Workstation combining Scanning Electron Microscope and Focused Ion Beam for nanoprototyping, nano-machining, nano-analysis and advanced sample preparation. Simultaneously images are achieved with the electron beam at ultra-high resolution using a Schottky field emitter while at the same time thinning with the ion beam using a liquid Gallium ion emitter. Instrument to be installed during the second semester of Electron optics : 0.9 nm at 1 kv Ion optics: 2.5 nm B) * 200 kv Probe corrected TEM/SEM (FEI) ( TITAN 200 kv with ChemiSTEM Technology ) Resolution STEM, 0.08 nm TEM, 0.24 nm ( Point resolution) C) Environmental Scanning Electron Microscope (Model Quanta 650 FEG) (FEI) Resolution 1.2 nm at 30 kv High Vac. 2.9 nm at 1 kv Extended vacuum mode (ESEM) nm at 30 kv (SE ) 51

52 4- Scientific Infrastructure X-Ray Photoelectron Spectroscopy (VG Thermo Escalab 220i XL) An analytical X-Ray Photoelectron Spectroscopy (XPS) system with multitechnique capability (AES/SAM/ISS/REELS) able to produce chemical maps with lateral resolution of <10 μm (or <20 μm for small area analysis). Instrument to be installed during the second semester of XRD Diffractometer (PANalytical's X'Pert PRO Materials Research Diffractometer ) (SAXSess from Anton Paar ) An X-Ray Diffractometer, a non-destructive technique used for analytical tasks such as grazing incidence, in-plane diffraction, reciprocal space mapping, reflectometry, and small-angle scattering for thin film research; studying layer thickness, lattice constants, lattice mismatch, periodicity, mosaic spreads, lattice stress and strain, composition, etc. Applications include optics, nanotechnology storage media, polymers, metals, minerals, catalysts, plastics, pharmaceuticals, thin-film coatings, ceramics, and semiconductors. Instrument to be installed during the second semester of

53 4- Scientific Infrastructure Biochemistry Lab: Gel Imaging System Dynamic Light Scattering UV VIS spectrophotometer Drop shape analysis system Radio Frequency Lab: Wafer Tester Full-Wafer magneto-resistance Tester (Capres) RF probe station (Cascade) Network/Spectrum analyzer Sampling Oscilloscope Packaging and Microfluidics Lab: Wire Bonding System High-speed pulse generator Multiple multimeters, power supplies Dicing Saw System High-Speed Machining System 53

54 4- Scientific Infrastructure The Central Biology and Biochemistry facility provides support for groups developing biology and biochemistry activities. These infrastructure is currently under a defi nition/installation phase but some equipments have been already projected: Equipment for FPLC/HPLC protein purification Spectrophotometry, mass spectrography with gas chromatography, flow cytochemistry and cell sorting Real-time PCR Confocal microscopy and centrifugation (ultra and low-speed) and cell culture The facility will also include the necessary supporting infrastructure, as optical and fluorescence microscopes, different low temperature chambers and freezers, a dark room, a sterile chamber with laminar fl ow, extraction benches, etc. Other common capabilities will support the Nanofabrication Cleanroom, the High Accuracy Labs and the Principal Investigator laboratories, These include: Device Assembly (packaging) Lab High Frequency device characterization Lab Nanostructures Fabrication Lab (Nanoparticle, nanotubes, etc.) 54

55 4- Scientific Infrastructure Semi automatic Probe Station ( CASCADE MICROTECH ) A semi-automatic wafer probe station used to automatically gather electrical characterization data of devices at wafer level. This tool is useful to extract statistically meaningful data concerning key device parameters and microfabrication process dependent deviations. Features and benefi ts : Precise 200mm probe system, with pre-programmed test sequences Sub-micron probing capability Die-to-die stepping time of under 100ms Able to probe up to 20 die/sec. 55

56 4- Scientific Infrastructure Magnetoresistive Tester ( CAPRES A/S; Current, In, Plane, Tester A prober used to extract TMR and RxA from bulk magnetic tunnel junction stacks, using a currentin-plane TMR measurement. The MTJ stack surface is contacted by a set of 12 cantilever electrodes with a variable spacing, down to 750nm. Features and benefits : Capability to measure the TMR of unpatterned MTJ stacks with an RxA down to 0.1 Ohm µm2 Capable of measuring the TMR in MTJs with both in-plane and perpendicular anisotropy In plane field up to 2500 Oe and perpendicular field up to 1400 Oe 56

57 4- Scientific Infrastructure Vibrating Sample Magnetometer ADE SYSTEMS (VSM + Torque); resolution app. 5 x 10-7 emu; K The Vibrating Sample Magnetometer system can measure samples with extremely low magnetic signals (5x10-7 emu) and/or very low coercivities (10mOe) in fi elds up to 2T. The system supports all known types of magnetic measurements such as hysteresis and minor loops, IRM and DCD Remanence Loops, SFD, Delta M, Delta H and Henkel Plots, as well as Angular and AC Remanence Loops, Temperature scans, and Time-decay measurements. It can perform measurements at low fi elds, with a H resolution of 0.01 Oe. Possibility of automatic sample handling, with up to 90 samples. SQUID ( QUANTUM DESIGN SQUID, VSM) Resolution 2 x 10-9 emu This SQUID based magnetometry system allows magnetic moment measurements with a sensitivity down to 1x10-8 emu (low fi elds), in a temperature range from 1.8K to 400K, and under a magnetic fi eld ranging up to 70 koe. The main module is liquid Helium-free, meaning that it works using a closedcycle refrigeration system able to provide the initial liquid he required for cooldown from a gas source, and to maintain the system operational at the required temperature and fi eld ranges. Magnetic Annealing Set-up ( MAGETIC SOLUTIONS) A set-up for the annealing of samples up to 400 º C, under controlled magnetic fi elds and environment, in fields up to 1 to 2 T, in Ar or vacuum, with programmable temperature ramps and cooldowns. The system can handle from wafer fragments to 200mm wafers and is capable of applying the magnetic fi eld either in plane or perpendicular to the plane of the wafer. 57

58 Creating Value at Nanoscale More information about the INL project on:

59 Creating Value at Nanoscale Thanks!! 59