An environment designed for success
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- Deirdre Moody
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2 An environment designed for success The nanofab is a centralized, open-access, training, service, and collaboration facility, focused on academic research and industrial applications in micro- and nanoscale fabrication and characterization. Our vision is to be the best research facility available to our diverse user community. Established in 1999, the nanofab totals $110M in specialized equipment and infrastructure across square feet of communal laboratory space including a 5000 square foot, class 100 cleanroom available to academic researchers, students, and industry. With over 190 tools available for training and independent use, the nanofab provides complete capabilities for lithography, thin film deposition, etching, microscopy, spectroscopy, and materials analysis, catering to a wide variety of applications. The nanofab also collaborates with academics and industry in the development of new processes and techniques, which can enhance our capabilities and offerings to our user community. Through our fee-for-service model, our expertise can be further leveraged, catering to your fabrication and characterization needs.
3 ADVANCED LITHOGRAPHY Dedicated 1000 sq ft vibration-isolated lithography room for UV, DUV, electronbeam, and laser writing capabilities. CONTACT MASK ALIGNERS (6 COMPATIBILITY)» General-purpose UV exposures» H-line (405 nm) / I-line (365 nm)» IR/optical backside alignment» Deep-UV exposures (220 nm / 254 nm)» Semi-automated alignment» Positive/negative tone resist chemistries HEIDELBERG DWL PATTERN GENERATOR» Produces 5 & 7 photomasks» 1 µm minimum feature size» Full-service processing with online» mask submission» Direct-write laser lithography EXTENSIVE WET CHEMICAL PROCESSING AREA AVAILABLE RAITH150 TWO ELECTRON-BEAM LITHOGRAPHY SYSTEM» Schottky field emission gun ( kv)» Interferometric laser stage for stitching» <10 nm minimum feature size» FBMS mode enables full-wafer processing ZEISS ORION NANOFAB HELIUM-ION MICROSCOPE WITH GALLIUM FIB» He beam for milling delicate sub-10 nm» nanostructures (nanomachining)» Ga FIB for bulk micromachining» Patterning and imaging controlled using» Fibics NPVE system Fabrication
4 THIN FILM DEPOSITION MAGNETRON PLASMA SPUTTERING» Four-substrate, three-gun, sequential» sputtering general-purpose chamber» Single-substrate, pulsed DC power» supply with RF back etch» Co- and reactive (O 2 /N 2 ) sputtering» Four-gun, load-locked, automated, single-» substrate system with RF back etch ELECTRON-BEAM EVAPORATION» Single-substrate, four-pocket system for»» deposition of metals and dielectrics» Two glancing-angle deposition (GLAD)» systems for nanostructured thin films» (automated substrate tilt and rotation) LOW-PRESSURE CHEMICAL VAPOUR DEPOSITION» Automated batch processing system» Deposition of low-stress nitride, stoichio-» metric nitride, poly-si, amorphous Si, and» boron-doped poly-si on 4 and 6 wafers» Annealing furnaces (up to 1050 C) THERMAL OXIDATION» Wet and dry oxidation of Si for high-» quality oxide growth on 4 and 6 wafers» General-purpose anneal (up to 1050 C)» Rapid thermal processing/annealing PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION» SiO 2, SiO x N y, and SiN x deposition» Tunable stoichiometry and film stress» Substrates: small pieces up to 6 wafers THERMAL ORGANIC EVAPORATOR
5 PLASMA ETCH ICPRIE SILICON PLASMA ETCH SYSTEM OXFORD ESTRELAS» Dedicated Bosch and Cryo processing» Nanometre to through-wafer etching» Plasma dicing for die singulation of» arbitrary shapes and layouts» Profile, depth, and sidewall roughness» control on 4 and 6 wafers» Optical endpoint detection ICPRIE DIELECTRIC PLASMA ETCH SYSTEM ALCATEL AMS110» Deep-etch system for quartz, glass, other» dielectric materials, and silicon» In-house process recipes for nanometre» to deep etching with vertical profiles ICPRIE METAL PLASMA ETCH SYSTEM OXFORD COBRA» Dedicated metal and III-V etching» Cl 2, BCl 3, HBr, SF 6, CHF 3, Ar, and O 2» etch chemistries» Optical endpoint detection» Tooled for 4 and 6 wafers TRION RIE AND OXFORD NGP80» Dedicated SiO 2 and SiN x etching» Substrates: small pieces up to 6 wafers DRY RELEASE ETCHING» XeF 2 for gas-phase isotropic etching of Si» Vapour HF for etching SiO 2» Dry etch release for MEMS SURFACE ACTIVATION, DESCUM, O 2 PLASMA POST-CLEANING AVAILABLE
6 MATERIALS ANALYSIS DISCOVERY/THERMO SCIENTIFIC TGA-FTIR» Thermogravimetric analysis (specimen» mass vs. temperature), with FTIR for» evolved gas analysis» Analysis from ambient up to 1000 C» Process gases: air, N 2, CO 2 AUTOSORB IQ» Flexible and versatile surface area and»» pore size analysis» Micropore, mesopore, and macropore» analysis by physi- or chemisorption DIFFERENTIAL SCANNING CALORIMETER» Measures temperatures and heat flows» associated with thermal transitions» Used to quantify glass transitions, phase» changes, crystallization, product stability,» cure/cure kinetics, and oxidative stability BIOMATERIALS ANALYSIS MALDI-MS» Mass spectroscopy on large biomolecules BD CALIBUR FLOW CYTOMETER» Used to count and sort cells and organ-» elles through fluorescent tags Q-TRAP MS WITH UPLC» Mass spectroscopy with liquid specimens» High sensitivity, accuracy, and throughput MEMS DEVICE PROBE STATIONS, UV-VIS SPECTROPHOTOMETER, VARIABLE- ANGLE SPECTROSCOPIC ELLIPSOMETER, OPTICAL PROFILOMETER, CONTACT ANGLE GONIOMETER Characterization
7 SURFACE SPECTROSCOPY JEOL-9500 AUGER MICROPROBE/FESEM» 2D and 3D elemental distributions on» surfaces with high spatial resolution» Auger spectrometer and Oxford EDX» Mapping and depth profiling IONTOF SIMS IMAGING SPECTROMETER» Elemental and molecular information»» about surfaces, thin layers, and interfaces» (2D maps and depth profiling)» Very high surface sensitivity» Detector mass range: from 1 (H) to» several thousand amu» Pulsed low-energy (20 ev) electron flood» gun for use with insulating specimens KRATOS AXIS 165 XPS SPECTROMETER» Semi-quantitative compositional and» chemical state information» Handles powders and solid specimens» Depth profiling with Ar + sputtering» Low-temperature capability to 150 C» In-situ catalysis cell attached to the XPS» analytical chamber X-RAY DIFFRACTION BRUKER D8 XRD» High resolution diffraction» Stage heating: ambient to 900 C» Quantitative phase analysis» 2-dimensional XRD2 capabilities RIGAKU XRD ULTIMATE IV» Thin-film and bulk XRD» Multiple-sample stage» Automatic alignment capability
8 ADVANCED MICROSCOPY ZEISS ORION NANOFAB HELIUM-ION MICROSCOPE WITH GALLIUM FIB» High surface sensitivity imaging» Ultra-high resolution imaging (0.5 nm)» Direct imaging of insulating materials» 3D tomography TRANSMISSION ELECTRON MICROCOPES JEOL JEM-ARM200CF» Cold FEG emitter» 200, 80, and 60 kv acceleration voltage» <0.1 nm resolution (HAADF STEM)» Large-angle SDD-EDX detector» 3D tomography PHILIPS CM20» 200 kv acceleration voltage» <0.3 nm resolution» EDX detector for elemental analysis SCANNING ELECTRON MICROCOPES ZEISS SIGMA FESEM» Schottky field emitter» 100 V to 30 kv acceleration voltage» Excellent low-voltage imaging» GEMINI column (electrostatic lens)» for imaging magnetic materials» Detectors: In-lens SE, SE, BSD, 150 mm 2» SDD-EDX, EBSD ZEISS EVO AND TESCAN VEGA-3» General-purpose, thermal emission SEMs» EDX detector for elemental mapping OPTICAL AND ATOMIC-FORCE MICROSCOPES
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