Quantum Technology: Supplying the Picks and Shovels

Transcription

1 Quantum Technology: Supplying the Picks and Shovels Dr John Burgoyne Quantum Control Engineering: Mathematical Solutions for Industry Open for Business Event 7 th August 2014, , Isaac Newton Institute, Cambridge Page 1

2 Why picks and shovels? 20 February 2006 Tools enable discovery Page 2

3 Behind the metaphor New ideas + New tools = New science Page 3

4 Von Hippel (1978), J. Marketing, Jan 1978, 36 Von Hippel (1986), Mgt Science, 32 7, 791 Why this dialogue is important Page 4

5 A suite of materials, metrology and measurement tools for QT MBE & UHV sputtering fabrication Surface analysis - chemical SEM Qbit measurement Surface analysis - structural Plasma deposition and etch Qbit manipulation Page 5

6 Device fabrication Page 6

7 Enabling device fabrication via a suite of advanced techniques and processes Growth MBE Nanowires/nanotubes High temperature plasmaenhanced chemical vapour deposition (PECVD) Deposition PECVD Inductively coupled plasma (ICP) deposition Ion beam deposition Atomic layer deposition (ALD) Etch ICP etch Reactive ion etch (RIE) Ion beam etch Page 7

8 Capabilities from research to pilot-scale and production solutions that grow with the technology 50 mm Wafer size 450 mm Open load Wafer handling Production cassette to cassette Page 8

9 Multi-tool clusters ALD (thermal & plasma) PECVD Sputter ICP-CVD #1 Hex handler with integrated Kelvin Probe Kelvin probe ICP-CVD #2 Page 9

10 Our process advantage Process library of > 6,000 processes developed over 25 years Accessible to all our customers Close collaboration with major Universities and R&D facilities Caltech, Cornell, LBNL, TU Eindhoven, IMEC, Southampton University, Cambridge University, Process guarantees for key parameters Including wafer-to-wafer repeatability for rate and uniformity TEOS based SiO 2 deposition Waveguide etch Typical GaN etched feature (PR remains intact) HB LED substrate etch SiC metal mask etch High rate SiN x at 8 0ºC Page 10

11 Extreme aspect ratio conformal deposition via Atomic Layer Deposition Unique capability of ALD for monatomic/ mono-molecular layer control over extremely high aspect ratio features Example (top): ALD of Al 2 O 3 on carbon nanotubes (CNT) Using TMA and O 2 plasma O2 plasma just enough to react with TMA but not etch CNT No additional functionalisation of CNT necessary Example (bottom): 20 nm HfO 2 onto 25:1 AR Si trenches Conformality ~ 100% Trench corner Trench bottom HfO 2 Si HfO 2 Si Page 11

12 Deposition UHV multi-chamber tool: Institute for Quantum Computing, University of Waterloo, Canada Page 12

13 Deposition UHV multi-chamber tool: Institute for Quantum Computing, University of Waterloo, Canada MBE and UHV sputtering methods on multiple materials within the same device Metals, metal oxides, superconductors, topological insulators XPS (X-ray photoelectron spectroscopy) analysis of samples Oxford Instruments Omicron ARGUS analyser In-process analysis Enables layer-by-layer quality control of the MBE and sputtering growth processes Page 13

14 Device physics and characterisation Page 14

15 A key enabler for QT/QIP R&D: the Triton TM Cryofree dilution refrigerator platform QT device physics needs low (ultra-low) temperatures The initial, obvious advantage: no liquid cryogens No compromise on performance Base temperature <10 mk Cooling power up to 400 µw at 100 mk Attraction for QT science emerged: greatly enhanced sample space vs. wet 240 mm diameter mixing chamber plate Open structure for easy experimental access Ease of use Sample in vacuum with only a single room temperature O-ring seal (no IVC) Fully automatic cool-down from room temperature to base Remote control through TCP/IP protocol Page 15

16 What else is needed for QIP read/write control ULT plus Electrical Wide bandwidth electronics GHz pulse sequences Low noise amplification Low temperature filtering and amplification Low electron temperatures Magnetic Homogeneous fields Gradient fields 3D Vector fields AC fields Optical Low vibration HV/UHV fs pulse sequences Single photon emitters Optical windows Spectroscopic detectors Atomic UHV Gas injection Ion/electron beam Rapid scan SPM Page 16

17 Triton DR: typical experimental services 4 K plate 2 off optical fibres 10 off UT-85 rigid coaxial cables 10 off S1 flexible coaxial cables 96 off dc lines Still plate 100 mk plate Mixing chamber plate, <10 mk Page 17

18 Experimental services, heat sinking and available cooling powers Fully loaded Triton DR: base temperature < 15 mk Page 18

19 Triton DR integrated 3-axis superconducting magnets Page 19

20 Multiple Triton DR systems: Centre for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Denmark Page 20

21 Multiple Triton DR systems: TU Delft, Netherlands Page 21

22 Fast throughput: top-loading sample exchange Page 22

23 30 mm top-loading sample puck 4 off 18 GHz 25 off dc lines Page 23

24 Fast throughput with larger sample space: bottom-loading sample exchange OVC break Sample puck Magnet Vacuum lock and gate valve Drive rods Page 24

25 70 mm bottom-loading sample puck 14 off 40 GHz 50 off dc lines < 8 hours cool-down time Page 25

26 Fast throughput with larger sample space: bottom-loading sample exchange MC plate Coaxes routed from MC plate to docking station Repeat connect/disconnect cycles Docking station Field centre Sample holder Page 26

27 Sample instrumentation Page 27

28 New platform for yet greater capacity and capability: TritonXL 706 mm 1003 mm Ø 240 mm Ø 430 mm Page 28

29 TritonXL: sample space and wiring access Triton Ø 240 mm 1 x 50mm mm + 1 x 65 mm LoS ports TritonXL Ø 430 mm 6 x 50 mm + 1 x 100 mm LoS ports Page 29

30 And finally The future On-board cold electronics Filtering, multiplexing, amplifiers, Enhanced measurement Electron temperature thermometry Standardised measurement pucks Anticipating close participation in a number of QT Hubs For discussion! What are we not seeing yet in QC/QIP? What are we not seeing yet in QT beyond QC/QIP? Page 30

31 Thank you Page 31