Technology for Micro- and Nanostructures Micro- and Nanotechnology
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1 Lecture 10: Deposition Technology for Micro- and Nanostructures Micro- and Nanotechnology Peter Unger mailto: uni-ulm.de Institute of Optoelectronics University of Ulm Copyright 2013 by Peter Unger Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 1/18 Outline of Lecture 10: Deposition Evaporation Thermal Evaporation Electron-Beam Evaporation Chemical Vapor Deposition (CVD) Thermal CVD Plasma-Enhanced CVD (PECVD) Sputter Depostion Diode Sputtering Ion-Beam Sputter Deposition Electroplating (Galvanics) Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 2/18
2 Basic Setup of an Evaporation System Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 3/18 Different Evaporation Sources Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 4/18
3 Deposition by Evaporation Thermal Evaporation in a Vacuum Chamber Different Evaporation Sources (a) Direct Heating of the Evaporation Material (b) Inductive Heating of the Evaporation Material (c) Electron-Beam Evaporation Thickness Control Using a Quartz Optional Substrate Heating to Improve Layer Quality Optional Low-Energy Ion-Beam Sputter Source for Improved Layer Quality Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 5/18 Lift-Off Process Using Trilevel Resist System Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 6/18
4 Contact Metallization Patterned by Lift Off Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 7/18 Chemical Vapor Deposition (CVD) Systems LPCVD with Hot Wall APCVD with Cold Wall Horizontal APCVD Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 8/18
5 Chemical Vapor Deposition (CVD) Processes Athmospheric Pressure (APCVD) and Low Pressure (LPCVD) Hot-Wall and Cold-Wall Reactors Selected Typical Processes: Polysilicon Deposition using Hydrides at 650 C: SiH 4 Si + 2 H 2 High-Temperature Silicon Oxide (HTO) at 950 C: SiH 2 Cl N 2 O SiO HCl + 2 N 2 Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 9/18 Plasma-Enhanced Chemical Vapor Deposion Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 10/18
6 PECVD Deposition Process Similar to Reactive Ion Etching System Cathode (Smaller Electrode) at the Top Substrate Wafers on the Bottom Electrode (Anode) Substrate Surfaces (Anode) is Bombarded with Low Energy Anode is Heated (typically 300 C) Some Typical Processes: Polysilicon: SiH 4 Si + 2 H 2 Silicon Oxide: SiH N 2 O + 2 O 2 SiO N H 2 O Silicon Nitride (Si 3 N 4 ): SiH 4 + NH 3 + N 2 Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 11/18 Diode (Parallel Plate) Sputtering System Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 12/18
7 Diode Sputtering Deposition Process Similar to Reactive Ion Etching System Argon Plasma Cathode Target (Smaller Electrode) at the Top Substrate Wafers on the Bottom Electrode (Anode) Target (Cathode) is Sputter Bombarded with High Energy Target Material is Redeposited on the Substrates (Anode) Substrate Surface (Anode) is Bombarded with Low Energy Reactive Sputtering of Oxides/Nitrides Using Gas Mixtures of Argon with Small Amounts of Oxygen/Nitrogen to Improve Stoichiometry Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 13/18 Ion-Beam Sputter Deposition System ICP ion beam source FBN Target holder e Ar + Substrate holder Gate Load lock Shutter O 2 Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 14/18
8 Ion-Beam Sputter Deposition Ion-Beam Source (Kaufman, ICP, or ECR) Filament or Plasma-Bridge Neutralizer Argon Ion Beam Bombarding the Target ( ev) Target Material is Sputtered and Redeposited on the Substrate Thickness Control by Time or by Quartz Frequency Reactive Sputter Deposition Oxygen: SiO 2, Al 2 O 3, TiO 2 Nitrogen: Si 3 N 4 Optional Second Ion-Beam Source for Low Energy Substrate Bombardment Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 15/18 Electroplating Using Gold Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 16/18
9 Electroplated Gold Line 400 nm Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 17/18 Literature Marc J. Madou Fundamentals of Microfabrication, 2nd edition Chapter 3, Pattern Transfer with Addditive Techniques Pages CRC Press, Boca Raton 2002 Brian Chapman Glow Discharge Processes Sputtering and Plasma Etching John Wiley and Sons, New York, 1980, ISBN X Peter Unger, Technology for Micro- and Nanostructures Lecture 10: Deposition, Version of January 13, 2013 p. 18/18
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