Mextram 504. Jeroen Paasschens Willy Kloosterman Philips Research Laboratories, Eindhoven. c Philips Electronics N.V. 1999
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1 Mextram 54 Jeroen Paasschens Willy Kloosterman Laboratories, Eindhoven c Electronics N.V Mextram 54
2 Introduction (1) Previous CMC: Mextram 53 gives generally good results. Why Mextram 54 Modelling of SiGe processes Easier and hence better parameter extraction Better monotony in (higher) derivatives. We have tested Mextram 54 on five CMC data sets New parameter extraction only for process A
3 Process A: Cap Temp=25, 125 Mextram 53.2 (2) 12 Cbe 12 Cbc 5 Ccs Cbe [ff] 8 6 Cbc [ff] 8 6 Ccs [ff] Vbc[V] Vcs[V] 1 Cbe_ 1 Cbc_ 4 Ccs_ Cbe_[fF] 8 7 Cbc_[fF] 8 7 Ccs_[fF] Temp[C] Temp[C] Temp[C]
4 Process A: fgummel Vbc= Temp=25, 5, 75, 125, 15 Mextram 53.2 (3) 1 1 Ic Ib Is Ic [A] Ib [A] Is [A] Ic/Ib[ ] Ie/Ib dic/dvbe/ic [1/V] (dic/dvbe)/ic (dib/dvbe)/ib [1/V] (dib/dvbe)/ib
5 Process A: rgummel Vbe= Temp=25, 5, 75, 125, 15 Mextram 53.2 (4) 1 1 Ie Ib Is Ie [A] Ib [A] Is [A] Vbc[V] Vbc[V] Vbc[V] Ie/Ib[ ] Ie/Ib Vbc[V] Ie/(Ib+Is) [ ] Ie/(Ib+Is) Vbc[V] (die/dvbc)/ie [1/V] (die/dvbc)/ie Vbc[V]
6 Process A: foutput-ib Temp=25 Ib=1, 2, 3, 4 ua Mextram 53.2 (5) 3 Ic Is 1.1 Vbe Ic [ma] Is [A] Vbe [V] Vce[V] Vce[V] Vce[V] 15 Ic/Ib 1 1 dic/dvce 5 Ic/(dIc/dVce) Ic/Ib[ ] g_out [mho] Vef [V] Vce[V] Vce[V] Vce [V]
7 Process A: Temp=25 f=1 GHz, Vce =.2,.5,.8, 2, 5 V Mextram 53.2 (6) 25 Hfe=Ic/Ib 1 R_bb Ic/Ib 1 Rb Ic[A] Ic[A] ft 1 11 F_uni ft[hz] F_uni[Hz] Ic[A] Ic[A]
8 Outline (7) Introduction and previous Mextram 53 results Reformulation of the epilayer model Results Conclusions
9 f T -example (8) Process A Single Poly BiCMOS process V CE =.2,.5,.8, 2., Emitter size: :6 5:4 m Double base contact: r p = 1 k Maximum cut off f frequency T T : 1 V CE = 5 V f f T : 6 V CE = :5 V ft [Hz] Ic[A]
10 sb 2 s C 2 s E 1 Internal base-collector bias (9) The internal base-collector bias increases strongly due to the (variable) epilayer resistance. When V B2 C 2 > V dc the junction is open. The bias increases only slightly. This happens quite abrupt. dpoly1, Vcb = 1, 3, 5 s C 1 1 R Cv V_b2c A A A -3-4 A AA Ic
11 Basics of the epilayer model (1) i When there is no injection into the epilayer: ( Wepi x = ) V epi V = B2 C, V 2 B2 C 1 and I = V epi SCR Cv V epi + I hc SCR Cv V epi + I hc R Cv Iepi Current in the epilayer I_epi Limits Ihc Vepi
12 Basics of the epilayer model (11) Vce = 5V;,Vbe =.87,.88,.9V; Ic =.32,.44,.74 ma 21 i In case of injection ( Wepi x > ) 2 V epi ' V dc, V B2 C 1 log(concentration (cm^-3)) Injection thickness is given by (Kull model) 15 x i Wepi B 2 C ) f (, V 2 B2 ) C 1 R f ( V = C 2 C 1 Cv I Distance (Microns) I C 1 C 2 = V epi SCR Cv (1, x i Wepi )2 V epi I + hc SCR Cv, x i (1 Wepi )2 V epi I + hc R Cv, x i (1 Wepi )
13 Mextram 53 (12) Voltages V B2 C 2 and V B2 C 1 are given. Combine the equations to find a third order equation for I C 1 C 2..1 Current in the epilayer From V B2 C 2 calculate.8.6 Reverse current I r Iepi.4 Reverse base charge Q BC.2 I_(xi=) Limits Ihc Iepi Vb2c Epilayer charge Q epi (from charge control relation) Uses also V B2 C 1 and I C 1 C 2 )
14 Mextram 54 concept (13) Injection starts when V B2 C 2 ' V dc :.4.35 Ic Iqs Cbimos3, Ib = 25u, 5u, 1u, 2u V qs V dc, V B2 C I qs qs SCR V V qs + I hc SCR Cv Cv V qs + I hc R Cv Ic, Iqs Vce Example without velocity saturation
15 Basics of the epilayer model (recap) (14) Vce = 5V;,Vbe =.87,.88,.9V; Ic =.32,.44,.74 ma 21 i In case of injection ( Wepi x > ) 2 V epi ' V dc, V B2 C 1 log(concentration (cm^-3)) Injection thickness is given by (Kull model) 15 x i Wepi B 2 C ) f (, V 2 B2 ) C 1 R f ( V = C 2 C 1 Cv I Distance (Microns) I C 1 C 2 = V epi SCR Cv (1, x i Wepi )2 V epi I + hc SCR Cv, x i (1 Wepi )2 V epi I + hc R Cv, x i (1 Wepi )
16 Mextram 54 (15) calculate from and i x Wepi 2 B V C1 2 C 1 (third order C I equation) x i Wepi =, I qs 1 C 1 C 2 I no velocity saturation x_i / Wepi Injection thickness No velocity saturation Velocity saturation 1, I qs C 1 C 2 I velocity saturation.1 1 Iepi / Iqs 2 3
17 Mextram 54 (16) Calculate V B 2 C 2 from the equation for x i Wepi (Kull model approximated): x i Wepi ( B f ), V f ( V 2 C 2 B2 C ) 1 R 2 C C 1 Cv I = From V B 2 C 2 calculate Reverse current I r Reverse base charge Q BC Epilayer charge Q epi This describes also charge in Ic, Ib, x_i / Wepi e-6 1e-8 1e-1 axi=.1 axi=.3 53 Gummelplot, cbimos3 hard saturation (I C 1 C 2 ' ) 1e Vbe
18 Current definition (17) Question: How do we find I C 1 C 2? Use the epilayer resistance as a current sensor. Node voltage V B2 C 2 is only used to define the current: C s 1 R Cv s C 2 B 2 C 2 f V ), f ( V 2 B2 C ) + V 1 C1 C 2 I ( 1 C R Cv (Kull model; also = C used in reverse) sb 2 A A A A AA =) V B2 C 2 is always reasonably physical. s E 1
19 Process A: h fe (18) 2 15 Vce =.2,.6,.9, 1.5, hfe Ic[A]
20 Current and derivatives (19).3.25 Cbimos3, Vce= Cbimos3, Vce= Ic d^2ic/dvbe^ Cbimos3, Vbe Vce= Cbimos3, Vbe Vce= dic/dvbe d^2ic/dvbe^ Vbe Vbe
21 Process A: fgummel Vbc= Temp=25,5,75 Mextram 54 (2).2 dic/dvbe 1. d2ic/dvbe 15 d3ic/dvbe dic/dvbe [A/V] d2ic/dvbe [A/V^2].5..5 d3ic/dvbe[a/v^3] dib/dvbe 1 d2ib/dvbe.5 d3ib/dvbe dib/dvbe[ma/v] d2ib/dvbe [ma/v^2] d3ib/dvbe [A/V^3]
22 Process C: fgummel Vbc= Temp=25, 75, 125 Mextram 54 (21) dic/dvbe [A/V] dic/dvbe d2ic/dvbe [A/V^2] d2ic/dvbe d3ic/dvbe[a/v^3] d3ic/dvbe dib/dvbe 2 d2ib/dvbe 3 25 d3ib/dvbe dib/dvbe[ma/v] d2ib/dvbe [ma/v^2] d3ib/dvbe [ma/v^3]
23 Output characteristics (22).2.18 Cbimos3, ib = 25u, 5u, 1u, 2u Cbimos3, ib = 25u, 5u, 1u, 2u Ic.1 gout Vce 1e Vce
24 Process A: foutput-ib Temp=25 Ib=1, 2, 3, 4 ua Mextram 53.2 (23) 3 Ic Is 1.1 Vbe Ic [ma] Is [A] Vbe [V] Vce[V] Vce[V] Vce[V] 15 Ic/Ib 1 1 dic/dvce 5 Ic/(dIc/dVce) Ic/Ib[ ] g_out [mho] Vef [V] Vce[V] Vce[V] Vce [V]
25 Process A: foutput-ib Temp=25 Ib=1, 2, 3, 4 ua Mextram 54 (24) 3 Ic Is 1.1 Vbe Ic [ma] Is [A] Vbe [V] Vce[V] Vce[V] Vce[V] 15 Ic/Ib 1 1 dic/dvce 5 Vef Ic/Ib[ ] dic/dvce [A/V] Vef [V] Vce[V] Vce [V] Vce [V]
26 One new parameter (25) Basically we only need one new parameter: a xi 9e+9 8e+9 Cbimos3, Vce =.8, 2. Mextram 54 axi =.3 axi =.3 axi = 1. 7e+9 6e+9 ft 5e+9 4e+9 3e+9 2e+9 1e Vbe We also add the transit time parameters B, epi, and R. (In Mextram 53 these are calculated from DC parameters)
27 Process A: f T, V ce = :2,.5,.8, 2., 5. (26) Mextram 53 Mextram ft [Hz] ft [Hz] Ic[A] Ic[A]
28 Conclusions (27) Mextram 54 has much smoother characteristics Better description of measurements, improved parameter extraction features must still be demonstrated. SiGe modelling: Mextram 53 results are reasonable. Physical description and geometric scaling better with Mextram 54 Not enough experience (yet) with SiGe (e.g. not tested in production) Mextram 54 will contain self-heating network Mextram 54 model equations are ready except for details Further testing mainly within
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