MC10H Bit Binary Counter
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1 M00 4Bit Binary ounter Description The M00 is a highspeed synchronous, presettable, cascadable 4bit binary counter. It is useful for a large number of conversion, counting and digital integration applications. Features ounting Frequency, 200 Mz Minimum Improved Noise Margin 50 mv (Over Operating Voltage and Temperature Range) Voltage ompensated ME 0K ompatible Positive Edge Triggered PbFree Packages are vailable* DIP SUFFI SE 620 MRKIN DIRMS* M00 WYYWW PDIP P SUFFI SE 648 M00P WYYWW P20 FN SUFFI SE 775 WYYWW W YY WW = ssembly ocation = Wafer ot = Year = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional marking information, refer to pplication Note ND8002/D. ORDERIN INFORMTION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. Semiconductor omponents Industries,, 2006 February, 2006 Rev. 8 Publication Order Number: M00/D
2 M00 V 0 T V P Table. TRUT TBE E P Function oad Parallel (P n to n ) oad Parallel (P n to n ) ount old Masters Respond; Slaves old Reset ( n = OW, T = I) E PO V EE P3 P2 P = lock Pulse (ow to igh); = lock Pulse (igh to ow) Features include assertion inputs and outputs on each of the four master/slave counting flipflops. Terminal count is generated internally in a manner that allows synchronous loading at nearly the speed of the basic counter. Pin assignment is for Dualinine Package Figure. Pin ssignment Table 2. MIMUM RTINS Symbol haracteristic Rating Unit V EE Power Supply (V = 0) 8.0 to 0 Vdc V I Input Voltage (V = 0) 0 to V EE Vdc I out Output urrent ontinuous Surge m T Operating Temperature Range 0 to +75 T stg Storage Temperature Range Plastic eramic 55 to to +5 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2
3 M00 Table 3. EETRI RTERISTIS (V EE = 5.2 V ±5%) (Note ) Symbol haracteristic Min Max Min Max Min Max Unit I E Power Supply urrent m I in Input urrent igh ll Except Pin I in Input urrent ow V O igh Output Voltage Vdc V O ow Output Voltage Vdc V I igh Input Voltage Vdc V I ow Input Voltage Vdc. Each ME 0 series circuit has been designed to meet the dc specifications shown in the test table, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 Ifpm is maintained. Outputs are terminated through a 50 resistor to 2.0 V. Table 4. RTERISTIS t pd t set Symbol haracteristic Min Max Min Max Min Max Unit t hold Propagation Delay Setup Time old Time lock to lock to T to P n to lock E or to lock lock to P n lock to E or f count ounting Frequency Mz t r Rise Time ns t f Fall Time ns NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously ns ns ns 3
4 M MSTER SVE MSTER SVE MSTER SVE P P2 P3 P0 E P Note that this diagram is provided for understanding of logic operation only. It should not be used for evaluation of propagation delays as many gate functions are achieved internally without incurring a full gate delay. / FO E E E E E OK SB MSB P0P3 P0P3 P0P3 P0P3 P0P3 /2 009 /2 009 /2 009 PN ounter to 5 M00 ascaded for 5 Stage Presettable ounter Max freq. is only OR gate delay below max when counting alone. T Figure 2. 4Bit Binary ounter ogic Diagram 4
5 M00 ORDERIN INFORMTION Device Package Shipping M00FN P20 46 Unit / Rail M00FN P20 (PbFree) 46 Unit / Rail M00FNR2 P / Tape & Reel M00FNR2 P20 (PbFree) 500 / Tape & Reel M00 DIP 25 Unit / Rail M00P PDIP 25 Unit / Rail M00P PDIP (PbFree) 25 Unit / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. 5
6 M00 PKE DIMENSIONS 20 ED P SE ISSUE E B (0.80) M T M S N S N Y BRK U (0.80) M T M S N S D M W 20 D 0.00 (0.250) S T M S N S V VIEW DD (0.80) M T M S N S R (0.80) M T M S N S (0.80) M T M S N S 0.00 (0.250) S T M S N S E (0.00) J T SETIN PNE VIEW S K K VIEW S NOTES:. DIMENSIONS ND TOERNIN R NSI Y4.5M, DIMENSIONS IN INES. 3. DTUMS, M, ND N DETERMINED WERE TOP OF ED SOUDER EITS PSTI BODY T MOD PRTIN INE. 4. DIMENSION, TRUE POSITION TO BE MESURED T DTUM T, SETIN PNE. 5. DIMENSIONS R ND U DO NOT INUDE MOD FS. OWBE MOD FS IS 0.00 (0.250) R SIDE. 6. DIMENSIONS IN TE PKE TOP MY BE SMER TN TE PKE BOTTOM BY UP TO 0.02 (0.300). DIMENSIONS R ND U RE DETERMINED T TE OUTERMOST ETREMES OF TE PSTI BODY EUSIVE OF MOD FS, TIE BR BURRS, TE BURRS ND INTERED FS, BUT INUDIN NY MISMT BETWEEN TE TOP ND BOTTOM OF TE PSTI BODY. 7. DIMENSION DOES NOT INUDE DMBR PROTRUSION OR INTRUSION. TE DMBR PROTRUSION(S) S NOT USE TE DIMENSION TO BE RETER TN (0.940). TE DMBR INTRUSION(S) S NOT USE TE DIMENSION TO BE SMER TN (0.635). F (0.80) M T M S N S INES MIIMETERS DIM MIN M MIN M B E F BS.27 BS J K R U V W Y K
7 M00 PKE DIMENSIONS T SETIN PNE F E 9 8 D P 0.25 (0.00) M T N B S DIP SUFFI ERMI DIP PKE SE 6200 ISSUE T K M J P 0.25 (0.00) M T B S NOTES:. DIMENSIONIN ND TOERNIN R NSI Y4.5M, ONTROIN DIMENSION: IN. 3. DIMENSION TO ENTER OF ED WEN FORMED PRE. 4. DIMENSION F MY NRROW TO 6 (0.030) WERE TE ED ENTERS TE ERMI BODY. INES MIIMETERS DIM MIN M MIN M B D E BS.27 BS F BS 4 BS K BS 7.62 BS M N F 9 D P B S K 0.25 (0.00) M T SETIN T PNE M PDIP P SUFFI PSTI DIP PKE SE ISSUE R J M NOTES:. DIMENSIONIN ND TOERNIN R NSI Y4.5M, ONTROIN DIMENSION: IN. 3. DIMENSION TO ENTER OF EDS WEN FORMED PRE. 4. DIMENSION B DOES NOT INUDE MOD FS. 5. ROUNDED ORNERS OPTION. INES MIIMETERS DIM MIN M MIN M B D F BS 4 BS BS.27 BS J K M S ME 0 and ME 0K are trademarks of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, (SI). SI reserves the right to make changes without further notice to any products herein. SI makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SI assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SI data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SI does not convey any license under its patent rights nor the rights of others. SI products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SI product could create a situation where personal injury or death may occur. Should Buyer purchase or use SI products for any such unintended or unauthorized application, Buyer shall indemnify and hold SI and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SI was negligent regarding the design or manufacture of the part. SI is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBITION ORDERIN INFORMTION ITERTURE FUFIMENT: iterature Distribution enter for ON Semiconductor P.O. Box 632, Phoenix, rizona US Phone: or Toll Free US/anada Fax: or Toll Free US/anada orderlit@onsemi.com N. merican Technical Support: Toll Free US/anada Japan: ON Semiconductor, Japan ustomer Focus enter 29 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative. M00/D
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Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
NB3N2304NZ. 3.3V 1:4 Clock Fanout Buffer
3.3V 1:4 lock Fanout Buffer Description The NB3N2304NZ is a low skew 1 to 4 clock fanout buffer, designed for high speed clock distribution such as in PI X applications. The NB3N2304NZ guarantees low output
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION
The SN74S240 and SN74S244 are Octal Buffers and ine Drivers designed to be employed as memory address drivers, clock drivers and bus-oriented transmitters/receivers which provide improved PC board density.
NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
MC10E163, MC100E163. 5VНECL 2-Bit 8:1 Multiplexer
5VНECL 2-Bit 8:1 Multiplexer Description The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs (SEL0, 1, 2) control which one of the eight
MC10H Bit Arithmetic Logic Unit/ Function Generator
C0H8 4Bit Arithmetic Logic Unit/ unction Generator The C0H8 is a highspeed arithmetic logic unit capable of performing 6 logic operatio and 6 arithmetic operatio on two fourbit words. ull internal carry
MC74VHC540. Octal Bus Buffer. Inverting
Octal Bus Buffer Inverting The MC74C540 is an advanced high speed CMOS inverting octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar
MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
BC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
NL27WZU04. Dual Unbuffered Inverter
Dual Unbuffered Inverter The N27WZU04 is a high performance dual unbuffered inverter operating from a.5 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many
BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
NL27WZ00. Dual 2-Input NAND Gate. The NL27WZ00 is a high performance dual 2 input NAND Gate operating from a 1.65 V to 5.5 V supply.
Dual 2-Input NAND Gate The N27WZ00 is a high performance dual 2 input NAND Gate operating from a.65 to 5.5 supply. Features Extremely igh Speed: t PD ns (typical) at = 5.0 Designed for.65 to 5.5 Operation
NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector
BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The 74HC38 is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648
The SN74LS194A is a High Speed 4-Bit Bidirectional Universal Shift Register. As a high speed multifunctional sequential building block, it is useful in a wide variety of applications. It may be used in
2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
MC74HC32A. Quad 2-Input OR Gate. High Performance Silicon Gate CMOS
MC74C32 Quad 2-Input OR Gate igh Performance Silicon Gate CMOS The MC74C32 is identical in pinout to the S32. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are
NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
MC74AC138, MC74ACT of 8 Decoder/Demultiplexer
1 of 8 Decoder/Demultiplexer The MC74AC138/74ACT138 is a high speed 1 of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple
NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
MC14070B, MC14077B CMOS SSI. Quad Exclusive OR and NOR Gates
C070B, C077B COS SSI Quad Exclusive OR and NOR Gates The C070B quad exclusive OR gate and the C077B quad exclusive NOR gate are constructed with OS Pchannel and Nchannel enhancement mode devices in a single
2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector
74AC00, 74ACT00 Quad 2-Input NAND Gate
74AC00, 74ACT00 Quad 2-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA ACT00 has TTL-compatible inputs Ordering Information Order Number Package Number General Description The AC00/ACT00
MC74HCT14A. Hex Schmitt-Trigger Inverter with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
MC74CT4 ex Schmitt-Trigger Inverter with STT Compatible Inputs igh Performance Silicon Gate CMOS The MC74CT4 may be used as a level converter for interfacing TT or NMOS outputs to high speed CMOS inputs.
MC14049B, MC14050B. Hex Buffer
MC4049B, MC4050B Hex Buffer The MC4049B Hex Inverter/Buffer and MC4050B Noninverting Hex Buffer are constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure.
NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.