MC74LVX373. Octal D-Type Latch with 3-State Outputs. With 5V Tolerant Inputs
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1 MC74X373 ctal -Type atch with 3-State utputs With 5 Tolerant Inputs The MC74X373 is an advanced high speed CMS octal latch with 3 state outputs. The inputs tolerate voltages up to 7.0, allowing the interface of 5.0 systems to systems. This 8 bit type latch is controlled by a latch enable input and an output enable input. When the output enable input is high, the eight outputs are in a high impedance state. Features igh Speed: t P = 5.8 (Typ) at = 3.3 ow Power issipation: I CC = 4 A (Max) at T A = 25 C Power own Protection Provided on Inputs Balanced Propagation elays ow Noise: P = (Max) Pin and Function Compatible with ther Standard ogic Families atchup Performance Exceeds 300 ma ES Performance: uman Body Model > 00 ; Machine Model > 0 These evices are Pb Free and are RoS Compliant SIC W SUFFIX CASE 75 PIN ASSIGNMENT TSSP T SUFFIX CASE 948E E E GN ead (Top iew) MARKING IAGRAMS X373 AWYYWWG X 373 AYW SIC TSSP X373 = Specific evice Code A = Assembly ocation W, = Wafer ot Y = Year WW, W = Work Week G or = Pb Free Package (Note: Microdot may be in either location) PIN NAMES Pi E E Function utput Enable Input atch Enable Input ata Inputs 3 State atch utputs RERING INFRMATIN See detailed ordering and shipping information in the package dimeio section on page 5 of this data sheet. Semiconductor Components Industries, C, 4 August, 4 Rev. 4 Publication rder Number: MC74X373/
2 MC74X373 E E 0 3 ne ne ne ne ne ne ne ne 9 7 Figure. ogic iagram INPUTS UTPUTS E E n n PERATING ME h l Traparent (atch isabled); Read atch atched (atch Enabled) Read atch X NC old; Read atch X old; isabled utputs h l Traparent (atch isabled); isabled utputs atched (atch Enabled); isabled utputs = igh oltage evel; h = igh oltage evel ne Setup Time Prior to the atch Enable igh to ow Traition; = ow oltage evel; l = ow oltage evel ne Setup Time Prior to the atch Enable igh to ow Traition; NC = No Change, State Prior to the atch Enable igh to ow Traition; X = igh or ow oltage evel or Traitio are Acceptable; = igh Impedance State; For I CC Reaso NT FAT Inputs 2
3 MC74X373 MAXIMUM RATINGS Symbol Parameter alue C Supply oltage 0.5 to +7.0 in C Input oltage 0.5 to +7.0 out C utput oltage 0.5 to +0.5 I IK Input iode Current ma I K utput iode Current ± ma I out C utput Current, per Pin ±25 ma I CC C Supply Current, and GN Pi ±75 ma P Power issipation 80 mw T stg Storage Temperature 65 to +50 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECMMENE PERATING CNITINS Symbol Parameter Min Max C Supply oltage 3.6 in C Input oltage out C utput oltage 0 T A perating Temperature, All Package Types C t/ Input Rise and Fall Time 0 00 / Functional operation above the stresses listed in the Recommended perating Ranges is not implied. Extended exposure to stresses beyond the Recommended perating Ranges limits may affect device reliability. C EECTRICA CARACTERISTICS Symbol Parameter Test Conditio I igh evel Input oltage 3.6 I ow evel Input oltage 3.6 igh evel utput oltage ( in = I or I ) ow evel utput oltage ( in = I or I ) I = 50 A I = 50 A I = 4 ma I = 50 A I = 50 A I = 4 ma Min Typ Max Min Max I in Input eakage Current in = 5.5 or GN 3.6 ±0. ± A I Maximum 3 State eakage Current in = I or I out = or GN ± ±2.5 A I CC uiescent Supply Current in = or GN A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditio, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditio. 3
4 MC74X373 AC EECTRICA CARACTERISTICS (Input t r = t f = ) Symbol Parameter Test Conditio t P, Propagation elay = 2.7 C = 5 pf t P to C = 50 pf t P, t P t P, t P t P, t P t S t S Propagation elay E to utput Enable Time E to utput isable Time E to utput to utput Skew (Note ) = 2.7 = 2.7 R = k R = k = 2.7 R = k R = k = 2.7 = 3.3 ±0.3 C = 5 pf C = 50 pf C = 5 pf C = 50 pf C = 5 pf C = 50 pf C = 5 pf C = 50 pf C = 5 pf C = 50 pf C = 50 pf C = 50 pf C = 50 pf C = 50 pf Min Typ Max Min Max Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either IG to W (t S ) or W to IG (t S ); parameter guaranteed by design. CAPACITIE CARACTERISTICS Symbol Parameter Min Typ Max Min Max Cin Input Capacitance pf C out Maximum Three State utput Capacitance 6 pf C P Power issipation Capacitance (Note 2) 27 pf 2. C P is defined as the value of the internal equivalent capacitance which is calculated from the operating current coumption without load. Average operating current can be obtained by the equation: I CC(PR) = C P f in + I CC / 8 (per latch). C P is used to determine the no load dynamic power coumption; P = C P 2 f in + I CC. NISE CARACTERISTICS (Input t r = t f =, C = 50pF, = 3.3, Measured in SIC Package) Symbol Characteristic T A = 25 C P uiet utput Maximum ynamic 0.5 uiet utput Minimum ynamic 0.5 I Minimum igh evel ynamic Input oltage I Maximum ow evel ynamic Input oltage Typ Max TIMING REUIREMENTS (Input t r = t f = ) Symbol Parameter Test Conditio t w(h) Minimum Pulse Width, E = 2.7 t su Minimum Setup Time, to E = 2.7 t h Minimum old Time, to E = 2.7 Typ imit imit
5 MC74X373 SWITCING WAEFRMS t P t P GN E t w t P t P GN CC CC Figure 2. Figure 3. E GN AI t P t P IG IMPEANCE CC +0.3 t su t h t P t P E -0.3 CC IG Figure 4. IMPEANCE Figure 5. GN GN TEST CIRCUITS TEST PINT TEST PINT EICE UNER TEST UTPUT C * EICE UNER TEST UTPUT k C * CNNECT T WEN TESTING t P AN t P. CNNECT T GN WEN TESTING t P AN t P. *Includes all probe and jig capacitance Figure 6. Propagation elay Test Circuit *Includes all probe and jig capacitance Figure 7. Three State Test Circuit RERING INFRMATIN MC74X373WR2G MC74X373TR2G evice Package Shipping SIC (Pb Free) TSSP (Pb Free) 000 Tape & Reel 2500 Tape & Reel For information on tape and reel specificatio, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specificatio Brochure, BR80/. 5
6 0.5 (0.006) T 0.5 (0.006) T U 2X /2 PIN IENT U S S C 0.00 (0.004) T SEATING PANE X K REF 0.0 (0.004) M T U S S 0 A G MC74X373 PACKAGE IMENSINS TSSP CASE 948E 02 ISSUE C B U N J J N K K ÍÍÍÍ ÍÍÍÍ SERING FTPRINT* 7.06 SECTIN N N 0.25 (0.00) M NTES:. IMENSINING AN TERANCING PER ANSI Y4.5M, CNTRING IMENSIN: MIIMETER. 3. IMENSIN A ES NT INCUE M FAS, PRTRUSINS R GATE BURRS. M FAS R GATE BURRS SA NT EXCEE 0.5 (0.006) PER SIE. 4. IMENSIN B ES NT INCUE INTEREA FAS R PRTRUSIN. INTEREA FAS R PRTRUSIN SA NT EXCEE 0.25 (0.00) PER SIE. 5. IMENSIN K ES NT INCUE AMBAR PRTRUSIN. AWABE AMBAR PRTRUSIN SA BE 0.08 (0.003) TTA IN EXCESS F TE K IMENSIN AT MAXIMUM MATERIA CNITIN. 6. TERMINA NUMBERS ARE SWN FR REFERENCE NY. 7. IMENSIN A AN B ARE T BE ETERMINE AT ATUM PANE W. F MIIMETERS INCES IM MIN MAX MIN MAX ETAI E A B C W F G 0.65 BSC BSC J ETAI E J K K BSC BSC M PITC 6X X.26 IMENSINS: MIIMETERS *For additional information on our Pb Free strategy and soldering details, please download the N Semiconductor Soldering and Mounting Techniques Reference Manual, SERRM/. 6
7 MC74X373 PACKAGE IMENSINS SIC CASE ISSUE G 0X 0.25 M B M E A h X 45 NTES:. IMENSINS ARE IN MIIMETERS. 2. INTERPRET IMENSINS AN TERANCES PER ASME Y4.5M, IMENSINS AN E NT INCUE M PRTRUSIN. 4. MAXIMUM M PRTRUSIN 0.5 PER SIE. 5. IMENSIN B ES NT INCUE AMBAR PRTRUSIN. AWABE PRTRUSIN SA BE 0.3 TTA IN EXCESS F B IMENSIN AT MAXIMUM MATERIA CNITIN. X B 0.25 M T A S 8X e 0 B B S A A T SEATING PANE C MIIMETERS IM MIN MAX A A B C E e.27 BSC h N Semiconductor and the are registered trademarks of Semiconductor Components Industries, C (SCIC) or its subsidiaries in the ed States and/or other countries. SCIC ow the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCIC s product/patent coverage may be accessed at Marking.pdf. SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any licee under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal pportunity/affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATIN RERING INFRMATIN ITERATURE FUFIMENT: iterature istribution Center for N Semiconductor P.. Box 563, enver, Colorado 8027 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@oemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: N Semiconductor Website: rder iterature: For additional information, please contact your local Sales Representative MC74X373/
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MC74LCX157. Low-Voltage CMOS Quad 2-Input Multiplexer. With 5 V Tolerant Inputs (Non Inverting)
MC74C57 ow-voltage CMO Quad 2-Input Multiplexer With 5 V Tolerant Inputs (Non Inverting) The MC74C57 is a high performance, quad 2 input multiplexer operating from a 2.3 to 3.6 V supply. igh impedance
2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
MC74HC244A. Octal 3-State Noninverting Buffer/Line Driver/ Line Receiver. High Performance Silicon Gate CMOS
Octal 3-State Noninverting Buffer/Line Driver/ Line Receiver High Performance Silicon Gate CMOS The MC74HC244A is identical in pinout to the LS244. The device inputs are compatible with standard CMOS outputs;
NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual
NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.
74VHC08 Quad 2-Input AND Gate
74VHC08 Quad 2-Input AND Gate Features High Speed: t PD = 4.3ns (Typ.) at T A = 25 C High noise immunity: V NIH = V NIL = 28% V CC (Min.) Power down protection is provided on all inputs Low power dissipation:
74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The 74HC38 is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES
MMBVLT Series, MV5, MV, MV9, LV9 Preferred evice Silicon Tuning iodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general
MC74VHCT00A. Quad 2-Input NAND Gate
MC74CT00A Quad 2-Input NAND Gate The MC74CT00A is an advanced high speed CMOS 2 input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low
NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
MC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger
MC74AC32, MC74ACT32 Quad 2 Input NAND Schmitt Trigger The MC74AC/74ACT32 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free
BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
MC74AC259, MC74ACT Bit Addressable Latch
8 Bit Addressable Latch The MC74AC259/74ACT259 is a high speed 8 bit addressable latch designed for general purpose storage applicatio in digital systems. It is a multifunctional device capable of storing
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes
MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-
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MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
MC74VHC574. Octal D-Type Flip-Flop with 3-State Output
M74H574 Octal -Type Flip-Flop with 3-State Output The M74H574 is an advanced high speed MOS octal flip flip with 3 state output fabricated with silicon gate MOS technology. It achieves high speed operation
SN74LS74AMEL LOW POWER SCHOTTKY
The SN74S74A dual edge-triggered flip-flop utilizes Schottky TT circuitry to produce high speed D-type flip-flops. Each flip-flop has individual clear and set inputs, and also complementary Q and Q outputs.
NLU1G00 Single 2-Input NAND Gate The NLU1G00 MiniGate is an advanced high speed CMOS 2 input NAND gate in ultra small footprint. The NLU1G00 input and
Single 2-Input NND Gate The MiniGate is an advanced high speed CMOS 2 input NND gate in ultra small footprint. The input and output structures provide protection when voltages up to 7. are applied, regardless
MC74AC00, MC74ACT00. Quad 2 Input NAND Gate. High Performance Silicon Gate CMOS
Quad 2Input NAND Gate ighperformance SiliconGate CMOS Features Output Drive Capability: 24 ma Operating oltage Range: 2 to 6 AC00; to ACT00 ow Input Current:.0 A igh Noise Immunity Characteristic of CMOS
NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
MC74AC74, MC74ACT74. Dual D Type Positive Edge Triggered Flip Flop
Dual D Type Positive Edge Triggered Flip Flop The MC74AC74/74ACT74 is a dual D type flip flop with Asynchronous Clear and Set inputs and complementary (Q,Q) outputs. Information at the input is traferred
NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
S3A - S3N General-Purpose Rectifiers
S3A - S3N General-Purpose Rectifiers Features Low-Profile Package Glass-Passivated Junction UL Flammability Classification: 94V-0 UL Certified, UL #E258596 SMC/DO-214AB COLOR BAND DENOTES CATHODE ELECTRICAL
NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
74AC00, 74ACT00 Quad 2-Input NAND Gate
74AC00, 74ACT00 Quad 2-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA ACT00 has TTL-compatible inputs Ordering Information Order Number Package Number General Description The AC00/ACT00
SN74LS259MEL. 8 Bit Addressable Latch LOW POWER SCHOTTKY
8 Bit Addressable atch The SN74S259 is a high-speed 8-Bit Addressable atch designed for general purpose storage applicatio in digital systems. It is a multifunctional device capable of storing single line
2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
BAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL
NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized
PN2907 / MMBT2907 PNP General-Purpose Transistor
PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.
74HCT245. Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs. High-Performance Silicon-Gate CMOS
Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs High-Performance Silicon-Gate CMOS The 74HCT245 is identical in pinout to LS245. The device has TTL-Compatible Inputs. The HCT245
BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
FST Bit Bus Switch
FST32 4-Bit Bus Switch The ON Semiconductor FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and adds