L-Band 6-Bit Digital Phase Shifter
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1 Advance Information: AI1104 GaAs Monolithic Microwave IC P6 P1 V- V+ Control interface In P1 P2 P3 P4 P5 P6 Out UMS is developing a L-Band ( GHz) monolithic 6 bit digital phase-shifter with a range and offering a high phase accuracy. The typical RMS phase error is lower than 1.5. The circuit provides 6.5dB insertion losses associated to input and output return losses better than 15dB. A CMOS and TTL compatible 0/+3.3V and 0/+5V interface is available on chip. The circuit is mainly dedicated to defense and space systems and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.25µm gate length phemt process, and will be available both as a bare die, and in a standard surface mount 24 leads QFN5x5, compliant with the Restriction of Hazardous Substances (RoHS) European Union directive 2002/95/EC. Peak Phase Error versus States 1.2Ghz GHz 1.4Ghz Ref. : AI Jun 11 1/10 Subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale B.P Orsay Cedex France Tel. : +33 (0) Fax : +33 (0)
2 AI1104 Electrical Characteristics Tamb.= +25 C Symbol Parameter Min Typ Max Unit Fop Operating frequency range GHz PhS Phase Shifting Range deg PhS step Phase Shifting Step deg PPE Peak Phase Error +3/- 1 deg RMS_PE RMS Phase Error 1.5 deg IL Insertion Loss 6.5 db Av Amplitude Variation +/- 0.5 db RMS_Av RMS Amplitude Variation 0.15 db VSWR_In Input Return Loss 15 db VSWR_Out Output Return Loss 15 db P1dB Input 1dBcomp (CW) 23 dbm Ts Switching time 20 ns V_low Control Input (A1-A6) low level V V_high Control Input (A1-A6) high level V V+ Positive Supply Voltage 5 or 3.3 V V- Negative Supply Voltage - 5 V I+ Positive Supply Current 4 ma I- Negative Supply Current 3.5 ma Top Operating temperature deg These values are representative of measurements made with bonding wires at the RF ports. Typically bonding wire of 0.3nH is used at RF ports. Absolute Maximum Ratings Tamb.= +25 C (1) Symbol Parameter Values Unit V+ Maximum DC positive supply voltage +6 V V- Maximum DC negative supply voltage -6 V Vctrl Phase shifter control voltage (Vlow, Vhigh) -2 to +6 V Pin Maximum peak input power overdrive 25 dbm Tj Junction temperature 175 C Ta Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +150 C (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : AI Jun 11 2/10 Subject to change without notice
3 AI1104 Peak Phase Error (PPE) definition PPE(i) = measured_phase(s21)@state(i) - measured_phase(s21)@state(0) - theoreticalphasevalue@state(i) Amplitude Variation (Av) definition Av(i) = Measured_dB(S21)@state(i) - Measured_dB(S21)@state(0) RMS Phase Error (RMS_PE) definition 63 2 PPE ( i) i 0 RMS_PE = 64 where I is the state number (from 0 to 63) RMS Amplitude variation (RMS_Av) definition RMS _ AV Av i 63 0 Av( i) 64 where I is the state number (from 0 to 63) Typical Bias Conditions Two options are possible for the positive value of the biasing circuit without impact on the RF performances. Option 1 Symbol PAD N o Parameter Values Unit +5 4 Positive Supply Voltage +5 V -5 5 Negative Supply Voltage -5 V Positive Supply Voltage NC Vctrl 7 to 12 Control Input Voltage 0 / +3.3 V Option 2 Symbol PAD N o Parameter Values Unit +5 4 Positive Supply Voltage +3.3 V -5 5 Negative Supply Voltage -5 V Positive Supply Voltage +3.3 V Vctrl 7 to 12 Control Input Voltage 0 / +3.3 V Ref. : AI Jun 11 3/10 Subject to change without notice
4 AI1104 Phase shifter control table Voltage to apply on the pads P1 to P6 State Phase (deg) P6 P5 P4 P3 P2 P1 State Phase (deg) P6 P5 P4 P3 P2 P Ref. : AI Jun 11 4/10 Subject to change without notice
5 AI1104 Typical Measurements Tamb.= +25 C, V+ = +5V, V- = -5V Insertion Losses versus All States Input Return All States Output Return All States Ref. : AI Jun 11 5/10 Subject to change without notice
6 AI1104 Typical Measurements Tamb.= +25 C, V+ = +5V, V- = -5V Peak Phase Error versus Frequency (All States) Peak Phase Error versus States 1.2Ghz GHz - 1.4Ghz RMS Phase Error versus Frequency Phase Shift versus States (1.2 GHz Frequency 1.4GHz) Ref. : AI Jun 11 6/10 Subject to change without notice
7 AI1104 Typical Measurements Tamb.= +25 C, V+ = +5V, V- = -5V Amplitude Variation versus Frequency (All States) Amplitude Variation versus States 1.2Ghz GHz - 1.4Ghz RMS Amplitude Variation versus Frequency Ref. : AI Jun 11 7/10 Subject to change without notice
8 AI1104 Mechanical dimensions and pad allocation Unit UNITS : µm : µm Tolerance = Tol ± : ± 35µm Pad number Pad name Description 1, 3, 13, 15 NC 2 IN Input RF V supply voltage: interface V supply voltage: interface V supply voltage: interface 7 P1 Phase shifter bit 1 8 P2 Phase shifter bit 2 9 P3 Phase shifter bit 3 10 P4 Phase shifter bit 4 11 P5 Phase shifter bit 5 12 P6 Phase shifter bit 6 14 Output RF 13 NC 1, 3, 15 Ground, NC Ref. : AI Jun 11 8/10 Subject to change without notice
9 AI1104 Recommended assembly plan -V +V IN P1 P2 P3 P4 P5 P6 OUT 100pF 25µm wedge bonding is preferred Bonding recommendations Port Connection IN (2) OUT (14) Inductance (Lbonding) = 0.3nH one wire: diameter 25µm, length 0.4mm DC and Interface pads Inductance (Lbonding) = 0.8nH one wire: diameter 25µm, length 1.0mm Note: An external capacitance is requested to protect the device from any external DC voltage that might be present on the RF accesses. Ref. : AI Jun 11 9/10 Subject to change without notice
10 AI1104 Recommended ESD management Refer to the application note AN0020 available at for ESD sensitivity and handling recommendations for the UMS package products.! Sampling request reference Die: ES-CHP F Contact us Web site: e.mail: Phone: 33 (1) (France) (USA) (China) Ref. : AI Jun 11 10/10 Subject to change without notice
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