CHP4012a98F RoHS COMPLIANT
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1 RoHS COMPLIANT GaAs Monolithic Microwave IC Description The CHP4012a98F is a 6-bit phase shifter monolithic circuit, which integrates a CMOS and TTL compatible interface. It is designed for a wide range of applications, typically defence and space systems. The circuit is manufactured with a phemt process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form and RoHS compliant SMD package. In P6 P1 V- V+ Control interface P1 P2 P3 P4 P5 P6 Out Main Features Frequency range: GHz phase shifter step phase shift range RMS phase error: 1 Digital interface Chip size: 3.61x1.84x0.1mm Main Electrical Characteristics Tamb.= +25 C Symbol Parameter Min Typ Max Unit Freq Frequency range GHz IL Insertion Loss 6 db RMS_PE RMS Phase Error 1 P1dB Input Power at 1dB gain compression 24.5 dbm Ref. : DSCHP4012a Jul 11 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale BP Orsay Cedex France
2 Electrical Characteristics Tamb.= +25 C Symbol Parameter Min Typ Max Unit Freq Frequency range GHz PhS Phase Shift Range PhS_step Phase Shift Step PPE Peak Phase Error -2 / +4 RMS_PE RMS Phase Error 1 IL Insertion Loss (all states) 6.0 db Av Amplitude Variation +/-0.5 db RMS_Av RMS Amplitude Variation 0.2 db S11 Input Reflection Coefficient (all states) -15 db S22 Output Reflection Coefficient (all states) -15 db P1dB Input Power at 1dB gain compression 24.5 dbm Vctrl_L Control Input Voltage (P1-P6) low level V Vctrl_H Control Input Voltage (P1-P6) high level V V+ Positive Supply Voltage +5 V V- Negative Supply Voltage -5 V I+ Positive Supply Current 5 ma I- Negative Supply Current 5 ma SwT Switching Time 15 ns Top Operating Temperature C Peak Phase Error (PPE) definition PPE(i) = measured_phase(s21)@state(i) - measured_phase(s21)@state(0) theoretical PhaseValue@State(i) Amplitude Variation (Av) definition Av(i) = Measured_dB(S21)@state(i) - Measured_dB(S21)@state(0) RMS Phase Error (RMS_PE) definition RMS_PE = 63 i 0 PPE 64 2 ( i) RMS Amplitude variation (RMS_Av) definition RMS _ AV Av 63 i 0 Av( i) 64 where (i) is the state number (from 0 to 63) Ref. : DSCHP4012a Jul 11 2/12 Specifications subject to change without notice
3 CHP4012a98F Absolute Maximum Ratings Tamb.= +25 C (1) Symbol Parameter Values Unit V+ Maximum DC positive supply voltage 8 V V- Maximum DC negative supply voltage -8 V Vctrl Phase shifter control voltage (Vlow, Vhigh) -2 to +8 V Pin Maximum peak input power overdrive 30 dbm Tj Junction temperature 175 C Ta Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +150 C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Two options are possible for the bonding of biasing and control pads without impact on the RF performances. Option 1 Pad name Pad number Parameter Values Unit V+ 3 Positive Supply Voltage +5 V V- 13 Negative Supply Voltage -5 V Vctrl 4, 7, 11, 14, 16, 18 Control Input Voltage 0 / +3.3 V Option 2 Pad name Pad number Parameter Values Unit V+ 17 Positive Supply Voltage +5 V V- 15 Negative Supply Voltage -5 V Vctrl 5, 6, 8, 9, 10, 12 Control Input Voltage 0 / +3.3 V Ref. : DSCHP4012a Jul 11 3/12 Specifications subject to change without notice
4 Phase shifter control table Voltage to apply on the pads P1 to P6 State Phase (deg) P6 P5 P4 P3 P2 P1 State Phase (deg) P6 P5 P4 P3 P2 P Ref. : DSCHP4012a Jul 11 4/12 Specifications subject to change without notice
5 CHP4012a98F Typical on wafer Measurements Temperature = -40 C, +25 C, +85 C, V+ = +5V, V- = -5V Insertion Losses versus States 0-40 C +25 C C Input Return States 0 Output Return States 0-40 C +25 C C -40 C +25 C C Ref. : DSCHP4012a Jul 11 5/12 Specifications subject to change without notice
6 Typical on wafer Measurements Temperature = +25 C, V+ = +5V, V- = -5V Insertion Losses versus All States Input Return All States Output Return All States Ref. : DSCHP4012a Jul 11 6/12 Specifications subject to change without notice
7 CHP4012a98F Typical on wafer Measurements V+ = +5V, V- = -5V Peak Phase Error versus Frequency (All States) Peak Phase Error versus States 2.7GHz < frequency < 3.5GHz RMS Phase Error versus Frequency Phase Shift versus States 2.7GHz < frequency < 3.5GHz -40 C +25 C C Ref. : DSCHP4012a Jul 11 7/12 Specifications subject to change without notice
8 Typical on wafer Measurements V+ = +5V, V- = -5V Amplitude Variation versus Frequency (All States) Amplitude Variation versus States 2.7GHz < frequency < 3.4GHz RMS Amplitude Variation versus Frequency Input Power at 1dB gain compression versus Frequency -40 C +25 C C -40 C +25 C C Ref. : DSCHP4012a Jul 11 8/12 Specifications subject to change without notice
9 CHP4012a98F Mechanical data Chip thickness: 100µm. Chip size: 3610x1840 ±35µm All dimensions are in micrometers Chip thickness = 100µm +/- 10µm. RF pads (1, 21) = 142 x 200µm² DC and control pads (3 to 18) = 100 x 100µm² Pad number Pad name Description 1 IN Input RF 5 or 18 P6 Phase Shift bit 6 6 or 16 P5 Phase Shift bit 5 8 or 14 P4 Phase Shift bit 4 9 or 11 P3 Phase Shift bit 3 10 or 7 P2 Phase Shift bit 2 12 or 4 P1 Phase Shift bit 1 15 or 13 V- -5V supply voltage: interface 17 or 3 V+ +5V supply voltage: interface 21 OUT Output RF 2, 19, 20, 22, 23 GND NC Ref. : DSCHP4012a Jul 11 9/12 Specifications subject to change without notice
10 Recommended assembly plan : Option 1 +V -V P1 P2 P3 P4 P5 P6 IN OUT 100pF 25µm wedge bonding is preferred Bonding recommendations Port IN (1) OUT (21) Connection Inductance (Lbonding) = 0.3nH one wire: diameter 25µm, length 0.4mm DC and Interface pads Inductance (Lbonding) = 0.8nH one wire: diameter 25µm, length 1.0mm Recommended circuit bonding table Pad name Type Decoupling Comment V-, V+ Bias 100pF Supply Voltage P1 to P6 Control Not Required Phase Shift Control Ref. : DSCHP4012a Jul 11 10/12 Specifications subject to change without notice
11 CHP4012a98F Recommended assembly plan : Option 2 -V +V P6 P5 P4 P3 P2 P1 IN OUT 100pF 25µm wedge bonding is preferred Bonding recommendations Port IN (1) OUT (21) Connection Inductance (Lbonding) = 0.3nH one wire: diameter 25µm, length 0.4mm DC and Interface pads Inductance (Lbonding) = 0.8nH one wire: diameter 25µm, length 1.0mm Recommended circuit bonding table Pad name Type Decoupling Comment V-, V+ Bias 100pF Supply Voltage P1 to P6 Control Not Required Phase Shift Control Ref. : DSCHP4012a Jul 11 11/12 Specifications subject to change without notice
12 Recommended ESD management Refer to the application note AN0020 available at for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form: CHP4012a98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHP4012a Jul 11 12/12 Specifications subject to change without notice
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