5-6GHz 6-bit Phase-Shifter. GaAs Monolithic Microwave IC in SMD leadless package
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1 RoHS COMPLIANT GaAs Monolithic Microwave IC in SMD leadless package Description The is a 6-bit digital phase shifter MMIC with a range. It is designed for 5 to 6GHz frequency range applications. The circuit supports a variety of C-band phased array applications including industrial sensors and military radars. The circuit is manufactured with a Power phemt process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. UMS P4014 YYWW It is available in lead-free SMD package. Main Features C-Band phase step 6dB Losses 26dBm input power at -1dB comp. I/O reversible TTL compatible control inputs 24 leads QFN4x5 SMD package Peak Phase Error versus 5.5GHz (packaged device, board measurement) Main Characteristics Tamb.= +25 C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 5 6 GHz G Small signal gain -7-6 db P1dB Input power at 1dB compression 26 dbm VAi (1) Voltage control 0 7 V (1) (1, 2, 3, 4, 5, and 6) ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DS Oct 10 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale BP Orsay Cedex France
2 Main Characteristics Tamb.= +25 C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 5 6 GHz PhS Phase Shifting Range deg PhS step Phase Shifting Step deg PPE Peak Phase Error +/- 4 +/- 7 deg RMSPE RMS Phase Error 1 2 deg Ls Insertion Loss 6 7 db LsV Insertion Loss variation +/ /- 0.7 db VSWR_In Input Return Loss db VSWR_Out Output Return Loss db P1dB Input 1dBc (CW) 26 dbm IIP3 Input Third Order Intercept 32 dbm Ts Switching time ns V_low Control Input (A1-A6) low level V V_high Control Input (A1-A6) high level V V+ Positive Supply Voltage 5 V V- Negative Supply Voltage - 5 V I+ Positive Supply Current ma I- Negative Supply Current ma Top Operating temperature deg Peak Phase Error (PPE) definition PPE (i) =measured_phase(s21) (i) measured_phase(s21) (0) theoretical_phase (i) where (i) is the state (from 0 to 63) Ref. DS Oct 10 2/10 Specifications subject to change without notice
3 RMS Peak Phase Error (RMSPE) definition RMSPE = 63 i= 0 ( PPE( i) PPE) PPE( i) = 0 Where PPE = i 64 Insertion Losses Variation (LsV) definition LsV (i) =measured_db(s21) (i) measured_db(s21) (0) where (i) is the state (from 0 to 63) 2 Absolute Maximum Ratings (1) Tamb.= +25 C Symb ol Parameter Values Unit V+ Maximum DC positive supply voltage +8 V V- Maximum DC positive supply voltage -8 V Ai (2) Phase Shifter CTRL voltage (V_low, V_high) -2, +8 V Pin Maximum peak input power overdrive +30 dbm Top Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +125 C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) = (1, 2, 3, 4, 5, and 6) A1 A2 A 3 A 4 A 5 A 6 DC interface RF_IN RF_OUT V- V+ Ref. : DS Oct 10 3/10 Specifications subject to change without notice
4 Phase Shifter Control Interface The 6-bit phase shifter is controlled by 6 voltages (A1 to A6). Reference state is 0. State is 0 when 0V is applied, state is 1 when +3.3V is applied. State A1 A2 A3 A4 A5 A6 Phase (deg) , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,375 Ref. DS Oct 10 4/10 Specifications subject to change without notice
5 Typical S-parameter results Tamb.= +25 C, packaged device, de-embedded board me asurement (board drawing 98015) Peak phase error (deg) versus frequency (all states) Peak phase error (deg) versus state 5GHz < frequency < 6GHz LsV (db) LsV (db) Insertion loss variation (db) versus frequency (all states) Insertion loss variation (db) versus state 5GHz < frequency < 6GHz db(s21) versus frequency (all states) Ref. : DS Oct 10 5/10 Specifications subject to change without notice db(s21) versus states 5GHz < frequency < 6GHz
6 Typical S-parameter results Tamb.= +25 C, packaged device, de-embedded board me asurement (board drawing 98015) db(s11) versus frequency (all states) db(s11) versus state 5GHz < frequency < 6GHz db(s22) versus frequency (all states) db(s22) versus states 5GHz < frequency < 6GHz Gain and output power versus input power (packaged device, board measurement, elementary states, frequency = 5.5GHz) Ref. DS Oct 10 6/10 Specifications subject to change without notice
7 Package outline Matt tin, Lead Free (Green) 1- Gnd (2) 9- Gnd (2) 17- A2 Units : mm 2- Nc 10- RF out 18- A1 From the standard : JEDEC MO V+ 11- Gnd (2) 19- Gnd (2) (VGGD) 4- V- 12- Nc 20- Nc 25- GND 5- Nc 13- A6 21- Gnd (2) 6- Nc 14- A5 22- RF in 7- Nc 15- A4 23- Gnd (2) 8- Nc 16- A3 24- Nc RF_in and RF_out are AC coupled (serie capacitances inside the circuit). (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 ( for exact package dimensions. (2) It is strongly recommended to ground all pins marked Gnd through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DS Oct 10 7/10 Specifications subject to change without notice
8 Evaluation Mother board Ref. DS Oct 10 8/10 Specifications subject to change without notice
9 Notes Ref. : DS Oct 10 9/10 Specifications subject to change without notice
10 Recommended package footprint Refer to the application note AN0017 available at for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management Refer to the application note AN0019 available at for environmental data on UMS package products. Recommended ESD management Refer to the application note AN0020 available at for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 4x4 RoHS compliant package: /XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DS Oct 10 10/10 Specifications subject to change without notice
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Obsolete Product(s) - Obsolete Product(s)
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