In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
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1 Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of or use Instead of sales.addresses@ or sales.addresses@ use salesaddresses@nexperia.com ( ) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
2 Rev. 2 July 27 Product data sheet BOTTOM VIEW. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Profile 55 % lower than SOT23 Low on-state resistance Leadless package Footprint 9 % smaller than SOT23 Fast switching Standard level compatible threshold.3 Applications Driver circuits Load switching in portable appliances.4 Quick reference data V DS 3 V R DSon 46 mω I D.78 A P tot 2.5 W 2. Pinning information Table. Pinning Pin Description Simplified outline Symbol gate (G) 2 source (S) D 3 3 drain (D) 2 Transparent G top view SOT883 (SC-) mbb76 S
3 3. Ordering information Table 2. Type number Ordering information Package Name Description Version SC- leadless ultra small plastic package; 3 solder lands; SOT883 body..6.5 mm 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S2.2, IEC/ST 634-5, JESD625-A or equivalent standards. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage 25 C T j 5 C - 3 V V DGR drain-gate voltage (DC) 25 C T j 5 C; R GS =2kΩ - 3 V V GS gate-source voltage - ±8 V I D drain current T mb =25 C; V GS = V; see Figure 2 and A T mb = C; V GS = V; see Figure A I DM peak drain current T mb =25 C; pulsed; t p µs; see Figure A P tot total power dissipation T mb =25 C; see Figure W T stg storage temperature C T j junction temperature C Source-drain diode I S source current T mb =25 C -.78 A I SM peak source current T mb =25 C; pulsed; t p µs A Electrostatic discharge V esd electrostatic discharge voltage all pins human body model; C = pf; R =.5 kω - 6 V machine model; C = 2 pf - 3 V _ Product data sheet Rev. 2 July 27 2 of 3
4 2 3aa7 2 3aa25 P der (%) I der (%) T sp ( C) T sp ( C) P der P tot I D = % I P der = tot( 25 C) I % D25 C ( ) Fig. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 3aab833 I D (A) Limit R DSon = V DS / I D t p = µs µs DC - ms ms ms V DS (V) Fig 3. T mb =25 C; I DM is single pulse Safe operating area; continuous and peak drain currents as a function of drain-source voltage _ Product data sheet Rev. 2 July 27 3 of 3
5 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance from junction to solder point see Figure K/W R th(j-a) thermal resistance from junction to ambient [] K/W [] Mounted on a printed-circuit board; vertical in still air. 2 3aab83 Z th(j-sp) (K/W) δ = single pulse P t p δ = T t p t T t p (s) Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration _ Product data sheet Rev. 2 July 27 4 of 3
6 6. Characteristics Table 5. Characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D =µa; V GS =V voltage T j =25 C V T j = 55 C V V GS(th) gate-source threshold voltage I D =.25 ma; V DS =V GS ; see Figure 9 and T j =25 C V T j = 5 C V T j = 55 C V I DSS drain leakage current V DS = 3 V; V GS =V T j =25 C - - µa T j = 5 C - - µa I GSS gate leakage current V GS = ±8 V; V DS = V - na R DSon drain-source on-state resistance V GS = 4.5 V; I D =.2 A; see Figure 6 and 8 T j =25 C mω T j = 5 C mω V GS = 2.5 V; I D =. A; see Figure 6 and mω V GS =.8 V; I D =.75 A; see Figure 6 and mω Dynamic characteristics Q G(tot) total gate charge I D = A; V DS = 5 V; V GS = 4.5 V; nc Q GS gate-source charge see Figure and nc Q GD gate-drain charge nc C iss input capacitance V GS =V; V DS = 25 V; f = MHz; pf C oss output capacitance see Figure pf C rss reverse transfer capacitance pf t d(on) turn-on delay time V DS = 5 V; R L =5Ω; V GS =V; R G =6Ω ns t r rise time ns t d(off) turn-off delay time ns t f fall time ns Source-drain diode V SD source-drain voltage I S =.3 A; V GS = V; see Figure V _ Product data sheet Rev. 2 July 27 5 of 3
7 2.5 I D (A) 2 3an R DSon (Ω).8 V GS (V) =.8 2 3an V GS (V) = V DS (V) I D (A) T j =25 C T j =25 C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 2.5 3an96.8 3al I D (A) C T j = 5 C a V GS (V) T j ( C) T j =25 C and 5 C; V DS >I D R DSon R a = DSon R DSon( 25 C) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature _ Product data sheet Rev. 2 July 27 6 of 3
8 .2 3aj65-3 3am43 V GS(th) (V).9 max I D (A).6 typ -4 min typ max min T j ( C) V GS (V) Fig 9. I D = ma; V DS =V GS T j =25 C; V DS =5V Gate-source threshold voltage as a function of junction temperature Fig. Sub-threshold drain current as a function of gate-source voltage 5 V GS (V) 4 I D = A T j = 25 C V DS = 5 V 3an99 V DS 3 I D V GS(pl) 2 V GS(th) V GS Q GS Q GS Q G (nc) Q GS Q GD Q G(tot) 3aaa58 I D = A; V DS =5V Fig. Gate-source voltage as a function of gate charge; typical values Fig 2. Gate charge waveform definitions _ Product data sheet Rev. 2 July 27 7 of 3
9 I S (A).8 V GS = V 3an97 C (pf) 2 3an98 C iss.6.4 C oss C rss.2 5 C T j = 25 C V SD (V) - V DS (V) 2 T j =25 C and 5 C; V GS =V Fig 3. Source current as a function of source-drain voltage; typical values V GS = V; f = MHz Fig 4. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values _ Product data sheet Rev. 2 July 27 8 of 3
10 7. Package outline Leadless ultra small plastic package; 3 solder lands; body. x.6 x.5 mm SOT883 L L 2 b e 3 b e A A E D.5 mm DIMENSIONS (mm are the original dimensions) scale UNIT mm A A () b b max. D E e e L L Note. Including plating thickness OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT883 SC Fig 5. Package outline SO883 (SC-) _ Product data sheet Rev. 2 July 27 9 of 3
11 8. Soldering.3 R =.5 (2 ).3 R =.5 (2 ).35 (2 ) solder lands (2 ) solder resist occupied area solder paste.3 (2 ).4 (2 ).5 (2 ) MBL873 Dimensions in mm Fig 6. Reflow soldering footprint for SOT883 _ Product data sheet Rev. 2 July 27 of 3
12 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes _ 2772 Product data sheet - - _ Product data sheet Rev. 2 July 27 of 3
13 . Legal information. Data sheet status Document status [][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail..3 Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights..4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS is a trademark of NXP B.V.. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com _ Product data sheet Rev. 2 July 27 2 of 3
14 2. Contents Product profile General description Features Applications Quick reference data Pinning information Ordering information Limiting values Thermal characteristics Characteristics Package outline Soldering Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 2 July 27 Document identifier: _
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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PSMN2-25P; PSMN2-25B Rev. 1 22 October 21 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PSMN2-25P
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationPHP/PHB/PHD45N03LTA. TrenchMOS logic level FET
Rev. 3 2 October 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP45N3LTA in SOT78 (TO-22AB)
More informationPSMN004-60P/60B. PSMN004-60P in SOT78 (TO-220AB) PSMN004-60B in SOT404 (D 2 -PAK).
Rev. 1 26 April 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN4-6P in SOT78 (TO-22AB) PSMN4-6B
More informationPHM21NQ15T. TrenchMOS standard level FET
M3D879 Rev. 2 11 September 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO8)
More informationBUK A. N-channel TrenchMOS logic level FET
Rev. 2 1 June 21 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This
More information20 V, complementary Trench MOSFET. Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive
Rev. 1 26 June 212 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN22-6 (SOT1118)
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationPHP/PHD3055E. TrenchMOS standard level FET. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK).
PHP/PHD355E Rev. 6 25 March 22 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP355E in SOT78
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationPHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET
Rev. 4 4 September 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP55N3LTA in a SOT78 (TO-22AB)
More informationBUK A. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D3 Rev. 1 29 January 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS
More informationDual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
Rev. 04 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse
More informationSI Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D35 Rev. 2 7 February 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Low gate charge Low
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationPHP/PHB174NQ04LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
Rev. 1 12 May 24 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
More informationBUK A. Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources
16 March 216 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationPSMN015-60PS. N-channel 60 V 14.8 mω standard level MOSFET. High efficiency due to low switching and conduction losses
Rev. 3 23 June 211 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a
More informationLow conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources
9 March 2 Product data sheet. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationPSMN D. N-channel TrenchMOS SiliconMAX standard level FET
Rev. 4 2 December 21 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS
More informationN-channel TrenchMOS logic level FET
M3D315 Rev. 3 23 January 24 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features Low on-state resistance Fast switching
More informationNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
More informationN-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance
Rev. 2 8 July 21 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationPSMN017-60YS. N-channel LFPAK 60 V 15.7 mω standard level MOSFET
Rev. 2 1 April 21 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a
More information150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
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Rev. 2 2 April 21 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a
More information65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA
Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
More informationPSMN4R0-40YS. N-channel LFPAK 40 V 4.2 mω standard level MOSFET
Rev. 2 12 July 21 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a
More informationPSMN7R0-60YS. N-channel LFPAK 60 V 6.4 mω standard level MOSFET
Rev. 2 3 March 21 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a
More informationPSMN012-60YS. N-channel LFPAK 60 V, 11.1 mω standard level MOSFET
Rev. 1 5 January 21 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in
More informationPSMN5R5-60YS. N-channel LFPAK 60 V, 5.2 mω standard level FET
Rev. 2 24 December 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in
More informationBUK A. N-channel TrenchMOS logic level FET
Rev. 2 7 June 21 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This
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